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MJ10012R

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJ10012/D

NPN Silicon Power Darlington

Transistor

The MJ10012 and MJH10012 are high±voltage, high±current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.

• Collector±Emitter Sustaining Voltage Ð

VCEO(sus) = 400 Vdc (Min)

•175 Watts Capability at 50 Volts

•Automotive Functional Tests

	COLLECTOR
BASE
≈ 1 k	≈ 30

EMITTER

MAXIMUM RATINGS

Rating	Symbol	MJ10012		MJH10012	Unit

Collector±Emitter Voltage	VCEO		400		Vdc
Collector±Emitter Voltage	VCER		550		Vdc
(RBE = 27 W)
Collector±Base Voltage	VCBO		600		Vdc
Emitter±Base Voltage	VEBO		8.0		Vdc
Collector Current Ð Continuous	IC		10		Adc
Ð Peak (1)			15

Base Current	IB		2.0		Adc
Total Power Dissipation	PD
@ TC = 25_C		175		118	Watts
@ TC = 100_C		100		47.5	Watts
Derate above 25_C		1.0		1.05	W/_C

Operating and Storage Junction	TJ, Tstg	± 65 to +200		± 55 to +150	_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max		Unit

Thermal Resistance, Junction to Case	RqJC	1.0	0.95	_C/W
Maximum Lead Temperature for	TL	275	275	_C
Soldering Purposes: 1/8″ from
Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

REV 2

MJ10012

MJH10012

10 AMPERE

POWER TRANSISTORS DARLINGTON NPN SILICON

400 VOLTS

175 AND 118 WATTS

CASE 1±07 TO±204AA (TO±3) MJ10012

CASE 340D±01

TO±218 TYPE

MJH10012

Motorola, Inc. 1995

MJ10012		MJH10012
	ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

			Characteristic	Symbol	Min		Typ	Max	Unit

	OFF CHARACTERISTICS (1)

	Collector±Emitter Sustaining Voltage (Figure 1)			VCEO(sus)	400		Ð	Ð	Vdc
	(IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO)
	Collector±Emitter Sustaining Voltage (Figure 1)			VCER(sus)	425		Ð	Ð	Vdc
	(IC = 200 mAdc, RBE = 27 Ohms, Vclamp = Rated VCER)
	Collector Cutoff Current (Rated VCER, RBE = 27 Ohms)			ICER	Ð		Ð	1.0	mAdc
	Collector Cutoff Current (Rated VCBO, IE = 0)			ICBO	Ð		Ð	1.0	mAdc
	Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)			IEBO	Ð		Ð	40	mAdc
	ON CHARACTERISTICS (1)

	DC Current Gain			hFE					Ð
	(IC = 3.0 Adc, VCE = 6 0 Vdc)				300		550	Ð
	(IC = 6.0 Adc, VCE = 6.0 Vdc)				100		350	2000
	(IC = 10 Adc, VCE = 6.0 Vdc)				20		150	Ð
	Collector±Emitter Saturation Voltage			VCE(sat)					Vdc
	(IC = 3.0 Adc, IB = 0.6 Adc)				Ð		Ð	1 5
	(IC = 6.0 Adc, IB = 0.6 Adc)				Ð		Ð	2.0
	(IC = 10 Adc, IB = 2.0 Adc)				Ð		Ð	2.5
	Base Emitter Saturation Voltage			VBE(sat)					Vdc
	(IC = 6.0 Adc, IB = 0.6 Adc)				Ð		Ð	2.5
	(IC = 10 Adc, IB = 2.0 Adc)				Ð		Ð	3.0
	Base Emitter On Voltage (IC = 10 Adc, VCE = 6.0 Vdc)			VBE(on)	Ð		Ð	2.8	Vdc
	Diode Forward Voltage (IF = 10 Adc)			Vf	Ð		2.0	3.5	Vdc
	DYNAMIC CHARACTERISTICS

	Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz)			Cob	Ð		165	350	pF
	SWITCHING CHARACTERISTICS

	Storage Time		(VCC = 12 Vdc, IC = 6.0 Adc,	ts	Ð		7 5	15	μs
	Fall Time		IB1 = IB2 = 0.3 Adc) Figure 2	t	Ð		5.2	15	μs
				f
	FUNCTIONAL TESTS

	Second Breakdown Collector Current with			IS/B		See Figure 10			Ð
	Base±Forward Biased

	Pulsed Energy Test (See Figure 12)			IC2L/2	Ð		Ð	180	mJ
	(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2%.

	VCC = 20 Vdc						VCC [ 14 V
	VCC = 20 Vdc						ADJUST UNTIL IC = 6 A
10 V					25	μ	ADJUST UNTIL IC = 6 A
10 V	L = 10 mH					μ
	L = 10 mH					s
0 V	*					[ 12 V	2 Ω
t1	*		0			[ 12 V	2 Ω
5 ms	100		0
5 ms	1N4933		225 μs			[ 12 V
	1N4933		225 μs			[ 12 V
220			Vclamp	En			Eo
	2N3713		Vclamp				T.U.T.
				51		1N3947
	VCEO	VCER				± 4 V
						± 4 V
		27	Vclamp
			Vclamp
			VCEO(sus) = 400 Vdc
			VCER(sus) = 425 Vdc
* Adjust t1 such that IC reaches 200 mA at VCE = Vclamp

Figure 1. Sustaining Voltage	Figure 2. Switching Times
Test Circuit	Test Circuit

2	Motorola Bipolar Power Transistor Device Data

	2000
	1000						TJ = 150°C
	1000
GAIN	700
GAIN	500				25°C
CURRENT					25°C
	300
	200
						30°C
, DC	100					30°C
, DC	100
FE	70
h	70					VCE = 3 Vdc
	50					VCE = 3 Vdc
	30					VCE = 6 Vdc
	30
	20	0.2	0.3	0.5	0.7	1	2	3	5	7	10
	0.1	0.2	0.3	0.5	0.7	1	2	3	5	7	10

IC, COLLECTOR CURRENT (AMP)

Figure 3. DC Current Gain

SATURATION		2.2
		2.2

		1.8			IC/IB = 5
COLLECTOR±EMITTER	(VOLTS)VOLTAGE	1.8																TJ	= 150		°C
																		TJ	= 150		°C
		1.4
		1.4															25°C
																	25°C
		1
		1																± 30°C
																		± 30°C
CE(sat)		0.6
CE(sat)		0.6
,
V		0.2
V

				0.2		0.3		0.5		0.7	1			2		3		5		7		10
		0.1		0.2		0.3		0.5		0.7	1			2		3		5		7		10
							IC, COLLECTOR CURRENT (AMP)
			Figure 5. Collector±Emitter Saturation Voltage
		10
		7
		7							ts
		5							ts
		5
		3

										tf
μs)		2								tf
		2


(
TIME		1
		1
t,		0.7


		0.5
		0.5										TJ =	25°C
												TJ =	25°C
		0.3										IC/IB	= 20
		0.2										VCE	= 12		Vdc
		0.2
		0.1
		0.1
		0.2		0.3		0.5	0.7	1			2	3		5		7		10				20

IC, COLLECTOR CURRENT (AMP)

Figure 7. Turn±Off Switching Time

(VOLTS)									MJ10012			MJH10012
(VOLTS)	3
	3												T	J	=		25°C
													T
VOLTAGE	2.5
VOLTAGE

COLLECTOR±EMITTER,	2

													10	A
	1.5


		IC	=	0.5	A		3			6
		IC	=	0.5	A		3			6
CE	1
	1


V	0.5
V	0.5	0.005				0.01	0.02	0.05		0.1	0.2	0.5				1		2
	0.002	0.005				0.01	0.02	0.05		0.1	0.2	0.5				1		2

IB, BASE CURRENT (AMP)

Figure 4. Collector Saturation Region

	2.8
(VOLTS)			VBE(sat) @ IC/IB = 5
	2.4		VBE(on) @ VCE = 6 V
	2.4

VOLTAGE	2				TJ = ± 30°C
VOLTAGE					TJ = ± 30°C
, BASE±EMITTER	1.6				25°C		25°C
							25°C
	1.2							°
							150 C

BE
V	0.8
	0.8	0.2	0.3	0.5	0.7	1	2	3	5	7	10
	0.1	0.2	0.3	0.5	0.7	1	2	3	5	7	10

IC, COLLECTOR CURRENT (AMP)

Figure 6. Base±Emitter Voltage

	104
			VCE = 250 V
μA)	3		TJ = 150°C
μA)	10
(
CURRENT	102		I	= I
			C	CES

,COLLECTOR	101		75°C
	101
	100		25°C
C	100
I
	10±1	REVERSE			FORWARD
	10±1	REVERSE
	± 0.2		0	+ 0.2	+ 0.4	+ 0.6	+ 0.8
			VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 8. Collector Cutoff Region

Motorola Bipolar Power Transistor Device Data

MJ10012 MJH10012

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

1
0.7	D = 0.5
0.5	D = 0.5
0.5
0.3		0.2
0.2		0.2
0.2
		0.1
0.1		0.05								RθJC(t) = r(t) RθJC			P(pk)
0.07		0.05								RθJC(t) = r(t) RθJC
0.07		0.02								RθJC = °C/W MAX
0.05		0.02								RθJC = °C/W MAX
0.05	0.01									D CURVES APPLY FOR POWER
	0.01									D CURVES APPLY FOR POWER				t1
0.03										PULSE TRAIN SHOWN				t1	t2
0.03										READ TIME AT t1
0.02		SINGLE PULSE								READ TIME AT t1
0.02										TJ(pk) ± TC = P(pk) RθJC(t)
										TJ(pk) ± TC = P(pk) RθJC(t)				DUTY CYCLE, D = t1/t2
														DUTY CYCLE, D = t1/t2
0.01		0.02	0.05	0.1	0.2	0.5	1	2	5	10	20	50	100	200	500	1,000	2,000
0.01		0.02	0.05	0.1	0.2	0.5	1	2	5	10	20	50	100	200	500	1,000	2,000
									t, TIME (ms)

Figure 9. Thermal Response

	50
(AMP)	20		MJ10012						100 μs
	10		MJ10012			5.0 ms
	5					5.0 ms
CURRENT	5		MJH10012					1.0 ms
	2		MJH10012					1.0 ms
	2
	1

COLLECTOR	0.2					dc
	0.2		TC = 25°C
	0.1		TC = 25°C
	0.1		BONDING WIRE LIMIT
			BONDING WIRE LIMIT
,			THERMAL LIMIT (SINGLE PULSE)
C
I
	0.01		SECOND BREAKDOWN LIMIT
	0.01
	0.005	10	20	30	50	70	100	200	300	500
	5	10	20	30	50	70	100	200	300	500

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 10. Forward Bias Safe Operating Area

	100
				SECOND BREAKDOWN
(%)	80			DERATING
(%)
FACTOR
FACTOR
DERATING	60	THERMAL DERATING
DERATING
POWER	20	MJH10012
	20	MJ10012
		MJ10012

	0	40	80	120	160	200
	0	40	80	120	160	200
			TC, CASE TEMPERATURE (°C)

Figure 11. Power Derating

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 10 is based on TC = 25_C, TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 11.

TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown.

			10 mH
			STANCORE
VCC = 12 Vdc		1.5	C2688
VCC = 12 Vdc
10 Vdc			VZ = 400 V
			VZ = 400 V
0 Vdc
t1	20	1N4933
5 ms	20			0.3


220	2N5881		T.U.T.	μF
	2N5881		27

t1 to be selected such that IC reaches 6 Adc before switch-off.

NOTE: ªUsageest,ºT Figure 12 specifies energy handling capabilities in an automotive ignition circuit.

Figure 12. Usage Test Circuit

4	Motorola Bipolar Power Transistor Device Data

MJ10012 MJH10012

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

±T±

SEATING

2. CONTROLLING DIMENSION: INCH.

PLANE

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO±204AA OUTLINE SHALL APPLY.

D 2 PL

INCHES

MILLIMETERS

0.13 (0.005) M

DIM

MIN

MAX

MIN

MAX

1.550 REF

39.37 REF

±Y±

±±±

1.050

±±±

26.67

0.250

0.335

6.35

8.51

0.038

0.043

0.97

1.09

0.055

0.070

1.40

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

±Q±

±±±

0.830

±±±

21.08

0.13 (0.005) M

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Q E

1 2 3

D J

CASE 340D±01

SOT 93, TO±218 TYPE

ISSUE A

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: MILLIMETER.

	MILLIMETERS		INCHES
DIM	MIN	MAX	MIN	MAX
A	19.00	19.60	0.749	0.771
B	14.00	14.50	0.551	0.570
C	4.20	4.70	0.165	0.185
D	1.00	1.30	0.040	0.051
E	1.45	1.65	0.058	0.064
G	5.21	5.72	0.206	0.225
H	2.60	3.00	0.103	0.118
J	0.40	0.60	0.016	0.023
K	28.50	32.00	1.123	1.259
L	14.70	15.30	0.579	0.602
Q	4.00	4.25	0.158	0.167
S	17.50	18.10	0.689	0.712
U	3.40	3.80	0.134	0.149
V	1.50	2.00	0.060	0.078

STYLE 1:

PIN 1. BASE

2.COLLECTOR

3.EMITTER

4.COLLECTOR

Motorola Bipolar Power Transistor Device Data

MJ10012 MJH10012

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
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◊ MJ10012/D

*MJ10012/D*

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