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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BUH51/D

			BUH51
Advance	Information

			POWER TRANSISTOR
SWITCHMODE		NPN Silicon	POWER TRANSISTOR
SWITCHMODE		NPN Silicon	3 AMPERES
Planar	Power	Transistor	800 VOLTS
Planar	Power	Transistor	50 WATTS
			50 WATTS

The BUH51 has an application specific state±of±art die designed for use in 50 Watts Halogen electronic transformers.

This power transistor is specifically designed to sustain the large inrush current during either the start±up conditions or under a short circuit across the load.

This High voltage/High speed product exhibits the following main features:

•Improved Efficiency Due to the Low Base Drive Requirements:

ÐHigh and Flat DC Current Gain h FE

ÐFast Switching

•Robustness Thanks to the Technology Developed to Manufacture this Device

•Motorola ª6 SIGMAº Philosophy Providing Tight and Reproducible Parametric Distributions

MAXIMUM RATINGS

CASE 77±07

TO±225AA TYPE

Rating	Symbol	Value	Unit

Collector±Emitter Sustaining Voltage	VCEO	500	Vdc
Collector±Base Breakdown Voltage	VCBO	800	Vdc
Collector±Emitter Breakdown Voltage	VCES	800	Vdc
Emitter±Base Voltage	VEBO	10	Vdc
Collector Current Ð Continuous	IC	3	Adc
Ð Peak (1)	ICM	8
Base Current Ð Continuous	IB	2	Adc
Base Current Ð Peak (1)	IBM	4
*Total Device Dissipation @ TC = 25_C	PD	50	Watt
*Derate above 25°C		0.4	W/_C

Operating and Storage Temperature	TJ, Tstg	± 65 to 150	_C

THERMAL CHARACTERISTICS

Thermal Resistance			_C/W
Ð Junction to Case	RqJC	2.5
Ð Junction to Ambient	RqJA	100
Maximum Lead Temperature for Soldering Purposes:	TL	260	_C
1/8″ from case for 5 seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Motorola, Inc. 1995

BUH51

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

	Characteristic				Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage					VCEO(sus)	500	550		Vdc
(IC = 100 mA, L = 25 mH)
Collector±Base Breakdown Voltage					VCBO	800	950		Vdc
(ICBO = 1 mA)
Emitter±Base Breakdown Voltage					VEBO	10	12.5		Vdc
(IEBO = 1 mA)
Collector Cutoff Current					ICEO			100	μAdc
(VCE = Rated VCEO, IB = 0)
Collector Cutoff Current				@ TC = 25°C	ICES			100	μAdc
(VCE = Rated VCES, VEB = 0)				@ TC = 125°C				1000
Collector Base Current				@ TC = 25°C	ICBO			100	μAdc
(VCB = Rated VCBO, VEB = 0)				@ TC = 125°C				1000
Emitter±Cutoff Current					IEBO			100	μAdc
(VEB = 9 Vdc, IC = 0)
ON CHARACTERISTICS

Base±Emitter Saturation Voltage				@ TC = 25°C	VBE(sat)		0.92	1.1	Vdc
(IC = 1 Adc, IB = 0.2 Adc)				@ TC = 125°C			0.8
Collector±Emitter Saturation Voltage				@ TC = 25°C	VCE(sat)		0.3	0.5	Vdc
(IC = 1 Adc, IB = 0.2 Adc)				@ TC = 125°C			0.32	0.6
DC Current Gain (IC = 1 Adc, VCE = 1 Vdc)				@ TC = 25°C	hFE	8	10		Ð
				@ TC = 125°C		6	8
DC Current Gain (IC = 2 Adc, VCE = 5 Vdc)				@ TC = 25°C		5	7.5		Ð
				@ TC = 125°C		4	6.2
DC Current Gain (IC = 0.8 Adc, VCE = 5 Vdc)				@ TC = 25°C		10	14		Ð
				@ TC = 125°C		8	13
DC Current Gain (IC = 10 mAdc, VCE = 5 Vdc)				@ TC = 25°C		14	20		Ð
				@ TC = 125°C		18	25
DYNAMIC SATURATION VOLTAGE

Dynamic Saturation	I = 1 Adc, I = 0.2 Adc			@ TC = 25°C	VCE(dsat)		1.7		V
	C		B1
Voltage:	VCC = 300 V			@ T = 125°C			6		V
Determined 3 μs after				C
Determined 3 μs after				@ TC = 25°C			5.1		V
rising IB1 reaches	IC = 2 Adc, IB1 = 0.4 Adc			@ TC = 25°C			5.1		V
90% of final IB1	V	CC	= 300 V	°			15		V
		CC		@ TC = 125 C			15		V
DYNAMIC CHARACTERISTICS

Current Gain Bandwidth					fT		23		MHz
(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)
Output Capacitance					Cob		34	100	pF
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Input Capacitance					Cib		200	500	pF
(VEB = 8 Vdc, f = 1 MHz)

2	Motorola Bipolar Power Transistor Device Data

									BUH51
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

	Characteristic				Symbol	Min	Typ	Max		Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 μs)

Turn±on Time	I	= 1 Adc, I	= 0.2 Adc	@ TC = 25°C	ton		110	150		ns
	I	= 1 Adc, I	= 0.2 Adc	°			125
	C	B1		@ TC = 125 C			125
		IB2 = 0.2 Adc
Turn±off Time		IB2 = 0.2 Adc		@ TC = 25°C	toff		3.5	4		μs
Turn±off Time		VCC = 300 Vdc		@ TC = 25°C	toff		3.5	4		μs
				@ TC = 125°C			4.1
Turn±on Time	I	= 2 Adc, I	= 0.4 Adc	@ TC = 25°C	ton		700	1000		ns
	I	= 2 Adc, I	= 0.4 Adc	°			1250
	C	B1		@ TC = 125 C			1250
		IB2 = 0.4 Adc
Turn±off Time		IB2 = 0.4 Adc		@ TC = 25°C	toff		1.75	2		μs
Turn±off Time		VCC = 300 Vdc		@ TC = 25°C	toff		1.75	2		μs
				@ TC = 125°C			2.1
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 μH)
Fall Time				@ TC = 25°C	tfi		200	300		ns
				@ TC = 125°C			320
Storage Time		IC = 1 Adc		@ TC = 25°C	tsi		3.4	3.75		μs
Storage Time		IB1 = 0.2 Adc		@ TC = 25°C	tsi		3.4	3.75		μs
		IB1 = 0.2 Adc		@ TC = 125°C			4
		IB2 = 0.2 Adc		@ TC = 125°C			4
Crossover Time				@ TC = 25°C	tc		350	500		ns
				@ TC = 125°C			640
Fall Time				@ TC = 25°C	tfi		140	200		ns
		IC = 2 Adc		@ TC = 125°C			300
Storage Time		IC = 2 Adc		@ TC = 25°C	tsi		2.3	2.75		μs
Storage Time		IB1 = 0.4 Adc		@ TC = 25°C	tsi		2.3	2.75		μs
		IB1 = 0.4 Adc		@ TC = 125°C			2.8
		IB2 = 0.4 Adc		@ TC = 125°C			2.8
Crossover Time				@ TC = 25°C	tc		400	600		ns
				@ TC = 125°C			725

TYPICAL STATIC CHARACTERISTICS

	100
						VCE = 1 V
GAIN			TJ = 125°C
GAIN
CURRENT	10	TJ = ± 20°C
CURRENT			TJ = 25°C
, DC
FE
h
	1		0.01
	0.001		0.01	0.1	1	10
			IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

	100
						VCE = 3 V
GAIN			TJ = 125°C
GAIN
, DC CURRENT	10	TJ = ± 20°C		TJ = 25°C
, DC CURRENT
FE
h
	1		0.01
	0.001		0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 3 Volt

Motorola Bipolar Power Transistor Device Data

BUH51

TYPICAL STATIC CHARACTERISTICS

	100
						VCE = 5 V
GAIN		TJ = 125°C
GAIN
, DC CURRENT	10	TJ = ± 20°C		TJ = 25°C
, DC CURRENT
FE
h
	1		0.01
	0.001		0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain @ 5 Volt

	10
	IC/IB = 10
(VOLTS)
, VOLTAGE	1				TJ = 25°C
					TJ = 25°C

CE			TJ = ± 20°C
V
	TJ = 125°C
	0.1
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector±Emitter Saturation Voltage

	1.5
		IC/IB = 10
(VOLTS)	1
(VOLTS)
VOLTAGE	TJ = ± 20°C
VOLTAGE	0.5	T	J	= 25°C
,			J
BE
BE				TJ = 125°C
V

	0
	0.001			0.01	0.1	1	10
				IC, COLLECTOR CURRENT (AMPS)

Figure 7. Base±Emitter Saturation Region

	10
		IC/IB = 5		TJ = 125°C
(VOLTS)				TJ = 125°C
	1
			TJ = 25°C
VOLTAGE			TJ = 25°C
VOLTAGE			TJ = ± 20°C
,	0.1
CE	0.1
CE
V
	0.01	0.01
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 4. Collector±Emitter Saturation Voltage

	1.5
		IC/IB = 5
(VOLTS)	1		TJ = ± 20°C
(VOLTS)
VOLTAGE
VOLTAGE	0.5	TJ = 25°C
,			TJ = 125°C
BE			TJ = 125°C
V
	0
	0.001	0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Base±Emitter Saturation Region

	2
				TJ = 25°C
				4 A
(VOLTS)	1.5		3 A
(VOLTS)			2 A
			2 A
VOLTAGE,	1	1 A
VOLTAGE,

CE
V	0.5
	0.5
	VCE(sat)
	(IC = 500 mA)
	0
	0.01	0.1	1	10

IB, BASE CURRENT (A)

Figure 8. Collector Saturation Region

4	Motorola Bipolar Power Transistor Device Data

BUH51

TYPICAL STATIC CHARACTERISTICS

	1000
		TJ = 25°C
		f(test) = 1 MHz
(pF)		Cib
C, CAPACITANCE	100
C, CAPACITANCE
		Cob
	10
	1	10	100
		VR, REVERSE VOLTAGE (VOLTS)

Figure 9. Capacitance

	1000
	900			TJ = 25°C
	900
(VOLTS)	800
(VOLTS)	700
BVCER	700
BVCER	600		BVCER @ 10 mA
	600
	500	BVCER(sus) @ 200 mA, 25 mH
	500
	400
	10	100	1000	10000	100000
			RBE (Ω)

Figure 10. Resistive Breakdown

TYPICAL SWITCHING CHARACTERISTICS

	2500
		IB1 = IB2
	2000	VCC = 300 V			IC/IB = 5
	2000	PW = 40	μ	s	IC/IB = 5
		PW = 40		s
t, TIME (ns)	1500
t, TIME (ns)	1000
	1000
	500					TJ = 125°C
						TJ = 125°C
	0					TJ = 25°C
	0	0		1	2	3
		0		1	2	3

IC, COLLECTOR CURRENT (AMPS)

	10
				IB1 = IB2
	8		IC/IB = 5	VCC = 300 V
	8		IC/IB = 5	PW = 40 μs
μs)	6
t, TIME (	4
	4
	2	TJ = 125°C
		TJ = 125°C
		TJ = 25°C
	0
	0	1	2	3

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Resistive Switching, ton

Figure 12. Resistive Switch Time, toff

7			IB1 = IB2			4
			IB1 = IB2
		IC/IB = 5	VCC = 15 V
		IC/IB = 5	VZ	= 300 V
			VZ	= 300 V		3
			LC = 200 μH			3
5			LC = 200 μH
5
μs)					μs)
(					(	2
t, TIME					t, TIME	2
t, TIME					t, TIME
3
						1
	TJ = 125°C
1	TJ = 25°C					0
1			2			0
0	1		2		3

		IC/IB = 10	IB1 = IB2
			VCC = 15 V
			VZ = 300 V
			LC = 200 μH
	TJ = 125°C
	TJ = 25°C
0.5	1	1.5	2

IC, COLLECTOR CURRENT (AMPS)	IC, COLLECTOR CURRENT (AMPS)
Figure 13. Inductive Storage Time, tsi	Figure 13 Bis. Inductive Storage Time, tsi

Motorola Bipolar Power Transistor Device Data

BUH51

TYPICAL SWITCHING CHARACTERISTICS

	800	IB1 = IB2
		IB1 = IB2
		VCC = 15 V			tc
		V	= 300 V		tc
	600	Z	= 200 μH
	600	L	= 200 μH
		C
(ns)						tc
t, TIME	400
t, TIME						tfi
						tfi
	200
			TJ = 125°C			tfi
			TJ = 25°C
	0	0.5	1	1.5	2	2.5
		0.5	1	1.5	2	2.5

IC, COLLECTOR CURRENT (AMPS)

Figure 14. Inductive Storage Time,

		tc & tfi @ IC/IB = 5
	4
(μs)	3
STORAGE TIME	3			IC = 0.8 A
				IC = 0.8 A
	2	IC = 2 A
,			I	= I
si			I	= I
t			B1	B2
		TJ = 125°C	VCC = 15 V
		TJ = 125°C	VZ = 300 V
		TJ = 25°C	VZ = 300 V
	1	TJ = 25°C	LC = 200 μH
	2	4	6	8	10

hFE, FORCED GAIN

Figure 16. Inductive Storage Time

	1000	IB1 = IB2
		IB1 = IB2
		VCC = 15 V
	800	VZ = 300 V
		LC	= 200 μH			tc
						tc
t, TIME (ns)	600
t, TIME (ns)	400				tfi
					tfi
	200					TJ = 125°C
						TJ = 125°C
	0					TJ = 25°C
	0	0.5	1	1.5	2	2.5
		0.5	1	1.5	2	2.5

IC, COLLECTOR CURRENT (AMPS)

Figure 15. Inductive Storage Time,

				tc & tfi @ IC/IB = 10
	450	IBoff = IB2
	400	IBoff = IB2
	400	VCC = 15 V
		VCC = 15 V
	350	VZ = 300 V
(ns)	300	LC = 200 μH
	300

TIME	250
TIME
, FALL	200
, FALL	150
fi
t
	100					IC = 0.8 A
	50	IC = 2 A		TJ = 125°C		IC = 0.8 A
	50	IC = 2 A		TJ = 125°C
	0			TJ = 25°C
	0		5			8	9
	3	4	5	6	7	8	9	10

hFE, FORCED GAIN

Figure 17. Inductive Fall Time

	800		TJ = 125°C
			TJ = 125°C			IC = 2 A
	700		TJ = 25°C			IC = 2 A
(ns)	600
TIME	600
TIME	500						IB1 = IB2
, CROSSOVER	500						VCC = 15 V
							VZ = 300 V
	400						LC = 200 μH
	300
c
t
	200						IC = 0.8 A
	100
	3	4	5	6	7	8	9	10

hFE, FORCED GAIN

Figure 18. Inductive Crossover Time

6	Motorola Bipolar Power Transistor Device Data

BUH51

TYPICAL SWITCHING CHARACTERISTICS

VCE

dyn 1 μs

dyn 3 μs

0 V

90% IB

1 μs

3 μs

TIME

Figure 19. Dynamic Saturation Voltage

Measurements

10
9	IC					90% IC
8				t		tfi
				t		tfi
7				si
7
6			10% Vclamp				10% IC
5	Vclamp		10% Vclamp			t	10% IC
						c
4
3	IB	90% IB1
2
1
0	1	2	3	4	5	6	7	8
0	1	2	3	4	5	6	7	8
				TIME

Figure 20. Inductive Switching Measurements

			Table 1. Inductive Load Switching Drive Circuit
+15 V
					100	μF	IC PEAK
1 μF	150 Ω	100 Ω		MTP8P10	100	μF
1 μF	150 Ω	100 Ω		MTP8P10
	3 W	3 W					VCE PEAK
	3 W						VCE PEAK
					MTP8P10	VCE
MPF930				MUR105	RB1	IB1
	MPF930			MUR105		IB1
+10 V	MPF930				Iout	I
						B
					A
50 Ω					RB2		IB2
50 Ω				MJE210

						V(BR)CEO(sus)	Inductive Switching	RBSOA
COMMON		150	Ω		MTP12N10	V(BR)CEO(sus)	Inductive Switching	RBSOA
		150	Ω		MTP12N10	L = 10 mH	L = 200 μH	L = 500 μH
		3 W				L = 10 mH	L = 200 μH	L = 500 μH
	500 μF	3 W				RB2 = ∞	RB2 = 0	RB2 = 0
	500 μF					RB2 = ∞	RB2 = 0	RB2 = 0
						VCC = 20 Volts	VCC = 15 Volts	VCC = 15 Volts
					1 μF	IC(pk) = 100 mA	RB1 selected for	RB1 selected for
±Voff							desired IB1	desired IB1
±Voff

TYPICAL THERMAL RESPONSE

	1
					SECOND BREAKDOWN
FACTOR	0.8					DERATING
FACTOR	0.6
DERATING	0.6
		THERMAL DERATING
	0.4
POWER	0.4
POWER	0.2
	0.2
	0	40	60	80	100	120	140	160
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

Figure 21. Forward Bias Power Derating

Motorola Bipolar Power Transistor Device Data

BUH51

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ±VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 22 is based

on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to

10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 22 may be found at any case temperature by using the appropriate curve on Figure 21.

TJ(pk) may be calculated from the data in Figure 24. At any case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn±off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 23). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

	100
(AMPS)	10		1 μs
CURRENT			1 μs
		1 ms	10 μs
	1	5 ms
, COLLECTOR		DC	EXTENDED
			EXTENDED
			SOA
	0.1

C
I
	0.01
	10	100	1000

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 22. Forward Bias Safe Operating Area

	4
(AMPS)					GAIN ≥	4	TC ≤ 125°C
					GAIN ≥	4	LC = 500	μH
							LC = 500	μH
	3
CURRENT	2
COLLECTOR	2
COLLECTOR	1						± 5 V
,
C
I
	0			0 V		±1.5 V
	0
	200	300	400	500	600	700	800	900
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 23. Reverse Bias Safe Operating Area

TYPICAL THERMAL RESPONSE

		1
TRANSIENT THERMAL RESISTANCE			0.5
			0.2
	(NORMALIZED)		0.1			P(pk)	RθJC(t) = r(t) RθJC
		0.1	0.05			P(pk)	RθJC(t) = r(t) RθJC
		0.1	0.05				RθJC = 2.5°C/W MAX
							RθJC = 2.5°C/W MAX
			0.02				D CURVES APPLY FOR POWER
			0.02			t1	PULSE TRAIN SHOWN
						t1	READ TIME AT t1
			SINGLE PULSE			t2	READ TIME AT t1
						DUTY CYCLE, D = t1/t2	TJ(pk) ± TC = P(pk) RθJC(t)
r(t),						DUTY CYCLE, D = t1/t2
		0.01
		0.01		0.1	1	10	100	1000

t, TIME (ms)

Figure 24. Typical Thermal Response (ZθJC(t)) for BUH51

8	Motorola Bipolar Power Transistor Device Data

BUH51

PACKAGE DIMENSIONS

±B±
U		F	C
Q			M
		±A±	M
		±A±
1	2	3
H		K
		K

V	J
G	R
S	0.25 (0.010) M A M B M
D 2 PL

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.425	0.435	10.80	11.04
B	0.295	0.305	7.50	7.74
C	0.095	0.105	2.42	2.66
D	0.020	0.026	0.51	0.66
F	0.115	0.130	2.93	3.30
G	0.094 BSC		2.39 BSC
H	0.050	0.095	1.27	2.41
J	0.015	0.025	0.39	0.63
K	0.575	0.655	14.61	16.63
M	5	TYP	5	TYP
Q	0.148	0.158	3.76	4.01
R	0.045	0.055	1.15	1.39
S	0.025	0.035	0.64	0.88
U	0.145	0.155	3.69	3.93
V	0.040	±±±	1.02	±±±

0.25 (0.010) M A M B M	STYLE 1:
	PIN 1.	EMITTER
	2.	COLLECTOR
	3.	BASE

CASE 77±08

TO±225AA TYPE

ISSUE V

Motorola Bipolar Power Transistor Device Data

BUH51

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*BUH51/D*

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