Добавил:

student_tipo Опубликованный материал нарушает ваши авторские права? Сообщите нам.

Вуз:

Балаковский институт техники, технологии и управления

Предмет:

[НЕСОРТИРОВАННОЕ]

Файл:

BDV65BRE

.PDF

Источник:

https://manualmachine.com

Скачиваний:

Добавлен:

06.01.2022

Размер:

112.7 Кб

Скачать

☆

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BDV65B/D

Complementary Silicon Plastic

Power Darlingtons

. . . for use as output devices in complementary general purpose amplifier applications.

• High DC Current Gain

HFE = 1000 (min.) @ 5 Adc

• Monolithic Construction with Built±in Base Emitter Shunt Resistors

MAXIMUM RATINGS

Rating	Symbol	Value	Unit

Collector±Emitter Voltage	VCEO	100	Vdc
Collector±Base Voltage	VCB	100	Vdc
Emitter±Base Voltage	VEB	5.0	Vdc
Collector Current Ð Continuous	IC	10	Adc
Ð Peak		20

Base Current	IB	0.5	Adc
Total Device Dissipation	PD	125	Watts
@ TC = 25_C		125	Watts
Derate above 25_C		1.0	W/_C

Operating and Storage Junction	TJ, Tstg	± 65 to +150	_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	θJC	1.0	_C/W

1.0

0.8

FACTOR	0.6
DERATING	0.4
	0.4
	0.2
	0

100

125

150

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

REV 7

NPN

BDV65B

PNP

BDV64B

DARLINGTONS

10 AMPERES

COMPLEMENTARY

SILICON

POWER TRANSISTORS 60 ± 80 ± 100 ± 120 VOLTS 125 WATTS

CASE 340D±01

SOT 93, TO±218 TYPE

Motorola, Inc. 1995

BDV65B BDV64B

ELECTRICAL CHARACTERISTICS

Characteristic	Symbol	Min	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage (1)	VCEO(sus)	100	Ð	Vdc
(IC = 30 mAdc, IB = 0)
Collector Cutoff Current	ICEO	Ð	1.0	mAdc
(VCE = 50 Vdc, IB = 0)
Collector Cutoff Current	ICBO	Ð	0.4	mAdc
(VCB = 100 Vdc, IE = 0)
Collector Cutoff Current	ICBO	Ð	2.0	mAdc
(VCB = 50 Vdc, IE = 0, TC = 150_C)
Emitter Cutoff Current	IEBO	Ð	5.0	mAdc
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS

DC Current Gain	hFE	1000	Ð	Ð
(IC = 5.0 Adc, VCE = 4.0 Vdc)
Collector±Emitter Saturation Voltage	VCE(sat)	Ð	2.0	Vdc
(IC = 5.0 Adc, IB = 0.02 Adc)
Base±Emitter Saturation Voltage	VBE(on)	Ð	2.5	Vdc
(IC = 5.0 Adc, VCE = 4.0 Vdc)

2	Motorola Bipolar Power Transistor Device Data

hFE, DC CURRENT GAIN

V, VOLTAGE (V)

10K

0.1

BDV65B BDV64B

					NPN													PNP
						VCE = 4	V		GAIN	10K






									CURRENTDC,	1K
									FE	1K






									h	1


1								10			1								10
1								10		0.1	1								10
	IC, COLLECTOR CURRENT (A)												IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain												Figure 3. DC Current Gain
									(V)	10







VBE(sat)		@ I	C/I	B =	250				V, VOLTAGE	1	VBE(sat) @			IC	/IB	=	250
VBE(sat)		@ I	C/I	B =	250					1
										0.1






1								10			1								10
1								10		0.1	1								10
	IC, COLLECTOR CURRENT (A)												IC, COLLECTOR CURRENT (A)
	Figure 4. ªOnº Voltages												Figure 5. ªOnº Voltages

	100
	50			100 μs
	50
(A)	20
CURRENT	20			1.0 ms
	10	dc	5.0 ms	1.0 ms
	10

	5
COLLECTOR	5	SECONDARY BREAKDOWN
		SECONDARY BREAKDOWN
		LIMITED @ TJ v 150°C
	1	THERMAL LIMIT @ TC = 25°C
		BONDING WIRE LIMIT
,
C
I		BDV65B, BDV64B
		BDV65B, BDV64B
	1	10	30	50	100

VCE, COLLECTOR±EMITTER VOLTAGE (V)

Figure 6. Active Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150_C, TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 7. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the limitations imposed by second breakdown.

Motorola Bipolar Power Transistor Device Data

BDV65B BDV64B

TRANSIENT THERMAL RESISTANCE	(NORMALIZED)
r(t),

1.0
D = 0.5
0.5
0.2
0.2
0.1					P(pk)			ZθJC(t) = r(t) RθJC
0.1					P(pk)			ZθJC(t) = r(t) RθJC
0.05								RθJC = 1.0°C/W MAX
0.05								D CURVES APPLY FOR POWER
0.02						t1		PULSE TRAIN SHOWN
0.03						t2		READ TIME AT t1
						t2		READ TIME AT t1
0.01	(SINGLE PULSE)					DUTY CYCLE, D = t1/t2		TJ(pk) ± TC = P(pk) ZθJC(t)
0.01	(SINGLE PULSE)					DUTY CYCLE, D = t1/t2
0.01	0.05	0.1	0.5	1.0	5	10	50	100	500	1000
0.01	0.05	0.1	0.5	1.0	5	10	50	100	500	1000
					t, TIME (ms)

Figure 7. Thermal Response

4	Motorola Bipolar Power Transistor Device Data

BDV65B BDV64B

PACKAGE DIMENSIONS

		C	NOTES:
B	Q	E	1.	DIMENSIONING AND TOLERANCING PER ANSI
B	Q	E		Y14.5M, 1982.
			2.	CONTROLLING DIMENSION: MILLIMETER.

					MILLIMETERS		INCHES
	U		4	DIM	MIN	MAX	MIN	MAX
			A	A	19.00	19.60	0.749	0.771
	L		A	B	14.00	14.50	0.551	0.570
S	L			C	4.20	4.70	0.165	0.185
S				D	1.00	1.30	0.040	0.051
				D	1.00	1.30	0.040	0.051
	1	2	3	E	1.45	1.65	0.058	0.064
K	1	2	3	G	5.21	5.72	0.206	0.225
K				G	5.21	5.72	0.206	0.225
				H	2.60	3.00	0.103	0.118
				J	0.40	0.60	0.016	0.023
				K	28.50	32.00	1.123	1.259
				L	14.70	15.30	0.579	0.602
				Q	4.00	4.25	0.158	0.167
				S	17.50	18.10	0.689	0.712
				U	3.40	3.80	0.134	0.149
				V	1.50	2.00	0.060	0.078

D J

V	H	STYLE 1:	BASE
	G	PIN 1.	BASE
	G	2.	COLLECTOR
		2.	COLLECTOR
		3.	EMITTER
		4.	COLLECTOR

CASE 340D±01

SOT 93, TO±218 TYPE

ISSUE A

Motorola Bipolar Power Transistor Device Data

BDV65B BDV64B

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊ BDV65B/D

*BDV65B/D*

Соседние файлы в папке Bipolar

#
06.01.2022151.75 Кб2BD787REV.PDF
#
06.01.2022180.49 Кб2BD789REV.PDF
#
06.01.202295.84 Кб2BD801REV.PDF
#
06.01.202296.41 Кб2BD802REV.PDF
#
06.01.2022107.5 Кб2BD808REV.PDF
#
06.01.2022112.7 Кб2BDV65BRE.PDF
#
06.01.2022180.4 Кб2BDW42REV.PDF
#
06.01.2022138.75 Кб2BDX33BRE.PDF
#
06.01.2022174.05 Кб2BDX53BRE.PDF
#
06.01.2022206.86 Кб2BU208ARE.PDF
#
06.01.2022223.29 Кб2BU323APR.PDF