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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJ410/D

 

 

MJ410

High Voltage

NPN Silicon

 

 

5 AMPERE

Transistors

 

 

POWER TRANSISTOR

. . . designed for medium to high voltage inverters, converters, regulators and

NPN SILICON

200 VOLTS

switching circuits.

 

 

100 WATTS

 

 

High Collector±Emitter Voltage Ð VCEO = 200 Volts

DC Current Gain Specified @ 1.0 and 2.5 Adc

Low Collector±Emitter Saturation Voltage Ð

VCE(sat) = 0.8 Vdc @ IC = 1.0 Adc

MAXIMUM RATINGS

 

 

 

 

 

 

 

Rating

Symbol

Value

 

Unit

 

 

 

Collector±Emitter Voltage

VCEO

200

 

Vdc

 

 

 

Collector±Base Voltage

VCB

200

 

Vdc

 

 

 

Emitter±Base Voltage

VEB

5.0

 

Vdc

 

 

 

Collector Current Ð Continuous

IC

5.0

 

Adc

 

 

 

Ð Peak

 

10

 

 

 

 

 

Base Current

IB

2.0

 

Adc

 

 

 

Total Device Dissipation @ TC = 75_C

PD

100

Watts

 

 

 

Derate above 75_C

 

1.33

W/_C

 

 

 

Operating Junction Temperature Range

TJ

± 65 to +150

_C

 

 

 

Storage Temperature Range

Tstg

± 65 to +200

_C

 

 

 

THERMAL CHARACTERISTICS

 

 

 

 

 

CASE 1±07

 

 

 

 

 

 

TO±204AA

 

Characteristic

Symbol

Max

 

Unit

 

 

 

 

(TO±3)

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

θJC

0.75

_C/W

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

 

 

 

 

Characteristic

 

 

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage

 

 

VCEO(sus)

200

Ð

Vdc

(IC = 100 mAdc, IB = 0)

 

 

 

 

 

 

 

Collector Cutoff Current

 

 

ICEO

 

Ð

0.25

mAdc

(VCE = 200 Vdc, IB = 0)

 

 

 

 

 

 

 

Collector Cutoff Current

 

 

ICEX

 

Ð

0.5

mAdc

(VCB = 200 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)

 

 

 

 

 

 

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

 

 

IEBO

 

Ð

5.0

mAdc

ON CHARACTERISTICS

 

 

 

 

 

 

 

DC Current Gain

 

 

hFE

 

30

90

Ð

(IC = 1.0 Adc, VCE = 5.0 Vdc)

 

 

 

 

 

(IC = 2.5 Adc, VCE = 5.0 Vdc)

 

 

 

 

10

Ð

 

Collector±Emitter Saturation Voltage

 

 

VCE(sat)

Ð

0.8

Vdc

(IC = 1.0 Adc, IB = 0.1 Adc)

 

 

 

 

 

 

 

Base±Emitter Saturation Voltage

 

 

VBE(sat)

Ð

1.2

Vdc

(IC = 1.0 Adc, IB = 0.1 Adc)

 

 

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

Current±Gain Ð Bandwidth Product

 

 

fT

 

2.5

Ð

MHz

(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

 

 

 

 

 

 

 

Motorola, Inc. 1995

MJ410

 

 

 

 

 

 

 

10

 

 

 

 

500 μs

 

(AMP)

5.0

 

 

5.0 ms

1.0 ms

 

 

 

 

 

 

2.0

TJ = 150°C

 

 

 

 

CURRENT

1.0

 

 

 

 

 

 

0.5

 

 

dc

 

 

 

, COLLECTOR

0.2

 

 

 

 

 

 

0.1

 

SECONDARY BREAKDOWN LIMITED

 

 

 

 

 

 

0.05

 

BONDING WIRE LIMITED

 

 

 

C

 

 

THERMAL LIMITATION AT TC = 75°C

 

 

I

 

 

 

 

 

0.02

 

CURVES APPLY BELOW RATED VCEO

 

 

 

0.01

10

20

 

 

 

500

 

5.0

50

100

200

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation then the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Pulse curves are valid for

duty cycles of 10% provided TJ(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that

can be handled to values than the limitations imposed by second breakdown.

 

100

 

 

 

 

 

 

 

 

 

70

 

TJ = 150°C

 

 

 

 

 

GAIN

50

 

 

 

 

 

VCE = 5.0 Vdc

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,DC CURRENT

30

 

 

25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

± 55°C

 

 

 

 

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

TJ = 150°C

 

 

5.0

 

 

 

 

1.0

 

 

 

 

0.05

0.1

0.2

0.3

0.5

2.0

3.0

5.0

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

Figure 2. DC Current Gain

 

500

 

 

 

 

 

 

(mA)

400

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

300

 

 

 

 

 

 

 

 

 

 

 

 

 

,COLLECTOR

200

VCEO(sus) IS ACCEPTABLE WHEN

 

 

 

VCE

RATED VCEO AT IC = 100 mA

 

 

100

 

 

 

 

 

 

C

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

0

 

100

200

300

400

 

 

0

 

500

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 4. Sustaining Voltage Test Load Line

 

2.0

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

1.6

 

 

 

 

 

 

 

 

(VOLTS)

 

 

 

 

VCE(sat) @ IC/IB = 10

 

 

1.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V, VOLTAGE

0.8

VBE(sat) @ IC/IB = 10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

0

 

 

 

 

VCE(sat) @ IC/IB = 5

 

 

0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

 

0.05

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

 

Figure 3. ``Onº Voltages

 

 

50 mH

 

 

 

X

 

 

 

 

200 Ω

Hg RELAY

+

TO SCOPE

+

 

 

6.0 V

50 V

 

 

±

Y

±

 

300 Ω

1.0 Ω

 

Figure 5. Sustaining Voltage Test Circuit

2

Motorola Bipolar Power Transistor Device Data

MJ410

PACKAGE DIMENSIONS

 

A

 

 

 

 

 

 

 

 

 

 

 

 

N

 

 

 

 

 

 

NOTES:

 

 

 

 

 

C

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

 

 

 

 

 

 

Y14.5M, 1982.

 

 

 

 

 

±T±

SEATING

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

E

 

 

PLANE

 

 

3. ALL RULES AND NOTES ASSOCIATED WITH

 

 

 

 

 

 

 

REFERENCED TO±204AA OUTLINE SHALL APPLY.

 

D 2 PL

K

 

 

 

 

 

 

 

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

 

 

 

 

 

0.13 (0.005) M

T

Q

M

Y

M

 

 

DIM

MIN

MAX

MIN

MAX

 

U

 

 

 

 

 

 

A

1.550 REF

39.37 REF

 

±Y±

 

 

 

 

B

±±±

1.050

±±±

26.67

V

L

 

 

 

 

 

 

 

 

 

 

C

0.250

0.335

6.35

8.51

 

2

 

 

 

 

 

 

D

0.038

0.043

0.97

1.09

 

 

B

 

 

 

 

E

0.055

0.070

1.40

1.77

H

G

 

 

 

 

 

G

0.430 BSC

10.92 BSC

1

 

 

 

 

 

 

H

0.215 BSC

5.46 BSC

 

 

 

 

 

 

 

K

0.440

0.480

11.18

12.19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

0.665 BSC

16.89 BSC

 

±Q±

 

 

 

 

 

 

N

±±±

0.830

±±±

21.08

 

0.13 (0.005) M

T

Y

M

 

 

 

Q

0.151

0.165

3.84

4.19

 

 

 

 

U

1.187 BSC

30.15 BSC

 

 

 

 

 

 

 

 

V

0.131

0.188

3.33

4.77

 

 

 

 

 

 

 

 

STYLE 1:

 

 

 

 

 

 

 

 

 

 

 

PIN 1. BASE

 

 

 

 

 

 

 

 

 

 

 

2. EMITTER

 

 

 

 

 

 

 

 

 

 

CASE: COLLECTOR

 

 

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola Bipolar Power Transistor Device Data

3

MJ410

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MJ410/D

*MJ410/D*

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