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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6107/D

2N6057 thru 2N605 (See 2N6050)

Complementary Silicon Plastic

Power Transistors

. . . designed for use in general±purpose amplifier and switching applications.

DC Current Gain Specified to 7.0 Amperes

hFE = 30±150 @ IC = 3.0 Adc Ð 2N6111, 2N6288

 

 

 

 

 

 

hFE = 2.3 (Min) @ IC = 7.0 Adc Ð All Devices

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage Ð

 

 

 

 

 

 

 

 

VCEO(sus) = 30 Vdc (Min) Ð 2N6111, 2N6288

 

 

 

 

 

 

VCEO(sus) = 50 Vdc (Min) Ð 2N6109

 

 

 

 

 

 

 

 

VCEO(sus) = 70 Vdc (Min) Ð 2N6107, 2N6292

 

 

 

 

 

 

High Current Gain Ð Bandwidth Product

 

 

 

 

 

 

 

 

fT = 4.0 MHz (Min) @ IC = 500 mAdc Ð 2N6288, 90, 92

 

 

 

fT = 10 MHz (Min) @ IC = 500 mAdc Ð 2N6107, 09, 11

 

 

 

TO±220AB Compact Package

 

 

 

 

 

 

 

 

 

 

*MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2N6111

 

 

 

2N6107

 

Rating

Symbol

 

2N6288

 

2N6109

 

2N6292

Unit

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Voltage

VCEO

 

30

 

50

 

70

 

Vdc

Collector±Base Voltage

VCB

 

40

 

60

 

80

 

Vdc

Emitter±Base Voltage

VEB

 

 

5.0

 

 

 

Vdc

Collector Current Ð Continuous

IC

 

 

7.0

 

 

 

Adc

Peak

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base Current

IB

 

 

3.0

 

 

 

Adc

Total Power Dissipation @ TC = 25_C

PD

 

 

40

 

 

 

Watts

Derate above 25_C

 

 

 

 

0.32

 

 

 

W/_C

 

 

 

 

 

 

 

 

 

 

Operating and Storage Junction

TJ, Tstg

 

 

± 65 to +150

 

 

_C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

 

Max

 

 

Unit

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

 

 

RθJC

 

3.125

 

_C/W

* Indicates JEDEC Registered Data.

 

 

 

 

 

 

 

 

 

 

PNP

2N6107

2N6109*

2N6111

NPN

2N6288

2N6292*

*Motorola Preferred Device

7 AMPERE

POWER TRANSISTORS COMPLEMENTARY SILICON

30 ± 50 ± 70 VOLTS

40 WATTS

CASE 221A±06

TO±220AB

 

40

 

 

 

 

 

 

 

 

(WATTS)

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DISSIPATION

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, POWER

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

P

 

 

 

 

 

 

 

 

 

 

0

20

40

60

80

100

120

140

160

 

0

 

 

 

TC, CASE TEMPERATURE (°C)

 

 

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola, Inc. 1995

2N6107

2N6109

2N6111

2N6288

2N6292

 

 

 

 

 

*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage (1)

 

 

VCEO(sus)

 

 

Vdc

 

(IC = 100 mAdc, IB = 0)

 

 

2N6111, 2N6288

 

30

Ð

 

 

 

 

 

 

2N6109

 

50

Ð

 

 

 

 

 

 

2N6107, 2N6292

 

70

Ð

 

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

 

 

 

ICEO

 

 

mAdc

 

(VCE = 20 Vdc, IB = 0)

 

 

2N6111, 2N6288

 

Ð

1.0

 

 

(VCE = 40 Vdc, IB = 0)

 

 

2N6109

 

Ð

1.0

 

 

(VCE = 60 Vdc, IB = 0)

 

 

2N6107, 2N6292

 

Ð

1.0

 

 

Collector Cutoff Current

 

 

 

ICEX

 

 

μAdc

 

 

 

 

 

 

 

(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)

 

2N6111, 2N6288

 

Ð

100

 

 

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)

 

2N6109

 

Ð

100

 

 

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)

 

2N6107, 2N6292

 

Ð

100

 

 

(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

2N6111, 2N6288

 

Ð

2.0

mAdc

 

(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

2N6109

 

Ð

2.0

 

 

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

2N6107, 2N6292

 

Ð

2.0

 

 

Emitter Cutoff Current

 

 

 

IEBO

Ð

1.0

mAdc

 

(VBE = 5.0 Vdc, IC = 0)

 

 

 

 

 

 

 

 

ON CHARACTERISTICS (1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

 

 

hFE

 

 

Ð

 

(IC = 2.0 Adc, VCE = 4.0 Vdc)

 

2N6107, 2N6292

 

30

150

 

 

(IC = 2.5 Adc, VCE = 4.0 Vdc)

 

2N6109

 

30

150

 

 

(IC = 3.0 Adc, VCE = 4.0 Vdc)

 

2N6111, 2N6288

 

30

150

 

 

(IC = 7.0 Adc, VCE = 4.0 Vdc)

 

All Devices

 

2.3

Ð

 

 

Collector±Emitter Saturation Voltage

 

 

VCE(sat)

Ð

3.5

Vdc

 

(IC = 7.0 Adc, IB = 3.0 Adc)

 

 

 

 

 

 

 

Base±Emitter On Voltage

 

 

 

VBE(on)

Ð

3.0

Vdc

 

(IC = 7.0 Adc, VCE = 4.0 Vdc)

 

 

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current Gain Ð Bandwidth Product (2)

 

 

fT

 

 

MHz

 

(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz)

2N6288, 92

 

4.0

Ð

 

 

 

 

 

 

2N6107, 09, 11

 

10

Ð

 

 

 

 

 

 

 

 

 

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

 

Cob

Ð

250

pF

 

Small±Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz)

hfe

20

Ð

Ð

* Indicates JEDEC Registered Data.

(1)Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

(2)fT = |hfe| ftest.

 

VCC

2.0

 

 

 

 

 

 

 

 

 

+ 30 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25 μs

RC

1.0

 

 

 

 

 

TJ = 25°C

 

0.7

 

 

 

 

 

VCC = 30 V

 

 

 

 

 

 

 

 

+11 V

SCOPE

0.5

 

 

 

 

 

IC/IB = 10

 

 

RB

 

 

 

 

 

 

 

 

 

0

μs)

0.3

 

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

 

TIMEt,

0.2

 

 

 

 

tr

 

 

 

51

D1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 9.0 V

 

0.1

 

 

 

 

 

 

 

 

tr, tf 10 ns

± 4 V

 

 

 

 

 

 

 

 

0.07

 

 

 

td @ VBE(off) 5.0 V

 

 

DUTY CYCLE = 1.0%

 

0.05

 

 

 

 

 

 

 

 

RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS

 

 

 

 

 

 

 

 

0.03

 

 

 

 

 

 

 

 

D1 MUST BE FAST RECOVERY TYPE, eg:

 

 

 

 

 

 

 

 

0.02

 

 

 

 

 

 

 

 

1N5825 USED ABOVE IB 100 mA

 

 

 

 

 

 

 

 

0.07 0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

7.0

MSD6100 USED BELOW IB 100 mA

 

IC, COLLECTOR CURRENT (AMP)

 

 

 

Figure 2. Switching Time Test Circuit

Figure 3. Turn±On Time

2

Motorola Bipolar Power Transistor Device Data

 

 

 

 

 

 

 

 

 

2N6107

2N6109

2N6111

2N6288

2N6292

(NORMALIZED)

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.7

D = 0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RESISTANCE

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

0.1

 

 

 

 

 

 

 

 

 

 

P(pk)

 

 

 

 

 

 

 

 

 

 

 

ZθJC(t) = r(t) RθJC

 

 

 

 

 

THERMAL

0.07

0.05

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RθJC = 3.125°C/W MAX

 

 

 

 

 

 

0.05

 

 

 

 

 

 

 

 

 

 

 

 

 

0.02

 

 

 

 

 

 

D CURVES APPLY FOR POWER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.03

 

 

 

 

 

 

PULSE TRAIN SHOWN

 

 

t1

 

 

 

TRANSIENT

 

 

 

 

 

 

 

READ TIME AT t1

 

 

 

t2

 

 

0.02

 

 

0.01

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ(pk) ± TC = P(pk) ZθJC(t)

 

DUTY CYCLE, D = t /t

 

 

 

 

 

 

 

 

 

 

 

 

SINGLE PULSE

 

 

 

 

 

 

 

 

 

 

 

1 2

 

0.01

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

1.0 k

r(t),

 

 

 

 

 

 

 

t, TIME (ms)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 4. Thermal Response

 

15

 

 

 

 

 

 

 

 

0.1 ms

 

10

 

 

 

 

 

 

 

 

(AMPS)

 

 

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

 

0.5 ms

 

 

 

5.0

 

 

 

 

 

 

 

 

 

 

CURRENT

3.0

 

 

 

 

 

dc

 

 

 

 

2.0

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

ms

, COLLECTOR

1.0

 

CURRENT LIMIT

 

 

 

 

 

 

0.7

 

SECONDARY

 

 

 

 

 

 

0.5

 

BREAKDOWN LIMIT

 

 

 

5.0 ms

 

 

THERMAL LIMIT

 

 

 

 

 

 

C

0.3

 

@ TC = 25°C (SINGLE PULSE)

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

0.15

2.0

3.0

5.0

7.0

10

20

30

50

70

100

 

1.0

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

 

Figure 5. Active±Region Safe Operating Area

 

5.0

 

 

 

 

 

 

 

 

 

 

3.0

 

 

 

 

 

TJ = 25°C

 

 

 

2.0

 

 

 

 

 

VCC = 30 V

 

 

 

 

 

 

ts

 

 

IC/IB = 10

 

 

μs)

1.0

 

 

 

 

 

IB1 = IB2

 

 

0.7

 

 

 

 

 

 

 

 

 

(

0.5

 

 

 

 

 

 

 

 

 

t, TIME

 

 

 

 

 

 

 

 

 

0.3

 

 

tr

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

0.07

 

 

 

 

 

 

 

 

 

 

0.05

0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

7.0

 

0.07

IC, COLLECTOR CURRENT (AMP)

Figure 6. Turn±Off Time

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the limitations imposed by second breakdown.

 

300

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

TJ = 25°C

 

 

(pF)

 

 

 

Cib

 

 

 

 

 

CAPACITANCE

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

70

 

 

Cob

 

 

 

 

 

C,

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

30

1.0

2.0

3.0

5.0

10

20

30

50

 

0.5

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data

3

2N6107 2N6109 2N6111 2N6288 2N6292

PACKAGE DIMENSIONS

 

 

 

 

±T±

 

B

 

F

C

 

 

 

T

S

4

 

 

 

 

Q

 

 

A

 

1

2

3

U

 

H

 

 

 

 

Z

 

 

K

 

 

 

 

 

L

 

 

 

R

V

 

 

 

J

G

 

 

 

 

 

 

 

D

 

 

N

 

 

 

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.570

0.620

14.48

15.75

B

0.380

0.405

9.66

10.28

C

0.160

0.190

4.07

4.82

D

0.025

0.035

0.64

0.88

F

0.142

0.147

3.61

3.73

G

0.095

0.105

2.42

2.66

H

0.110

0.155

2.80

3.93

J

0.018

0.025

0.46

0.64

K

0.500

0.562

12.70

14.27

L

0.045

0.060

1.15

1.52

N

0.190

0.210

4.83

5.33

Q

0.100

0.120

2.54

3.04

R

0.080

0.110

2.04

2.79

S

0.045

0.055

1.15

1.39

T

0.235

0.255

5.97

6.47

U

0.000

0.050

0.00

1.27

V

0.045

±±±

1.15

±±±

Z

±±±

0.080

±±±

2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

2N6107/D

*2N6107/D*

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