MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5758/D
High-Voltage High-Power
Silicon Transistors
. . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits.
• High Collector±Emitter Sustaining Voltage Ð VCEO(sus) = 100 Vdc (Min)
•DC Current Gain @ IC = 3.0 Adc Ð hFE = 25 (Min)
•Low Collector±Emitter Saturation Voltage Ð VCE(sat) = 1.0 Vdc (Max) @ IC = 3.0 Adc
MAXIMUM RATINGS (1)
Rating |
Symbol |
2N5758 |
Unit |
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Collector±Emitter Voltage |
VCEO |
100 |
Vdc |
Collector±Base Voltage |
VCB |
100 |
Vdc |
Emitter±Base Voltage |
VEB |
7.0 |
Vdc |
Collector Current Ð Continuous |
IC |
6.0 |
Adc |
Peak |
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10 |
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Base Current |
IB |
4.0 |
Adc |
Total Device Dissipation @ TC = 25_C |
PD |
150 |
Watts |
Derate above 25_C |
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0.857 |
W/_C |
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Operating and Storage Junction, |
TJ, Tstg |
± 65 to +200 |
_C |
Temperature Range |
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THERMAL CHARACTERISTICS (1)
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
θJC |
1.17 |
_C/W |
(1) Indicates JEDEC Registered Data.
2N5745 (See 2N4398)
2N5758
6 AMPERE
POWER TRANSISTOR
NPN SILICON
100 ± 140 VOLTS
150 WATTS
CASE 1±07 TO±204AA (TO±3)
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160 |
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(WATTS) |
140 |
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120 |
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DISSIPATION |
100 |
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80 |
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60 |
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, POWER |
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40 |
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D |
20 |
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P |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
200 |
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0 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power Derating
Safe area limits are indicated by Figure 5. Both limits are applicable and must be observed.
REV 7
Motorola, Inc. 1995
2N5758
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
VCEO(sus) |
100 |
Ð |
Vdc |
(IC = 200 mAdc, IB = 0) |
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Collector Cutoff Current |
ICEO |
Ð |
1.0 |
mAdc |
(VCE = 50 Vdc, IB = 0) |
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Collector Cutoff Current |
ICEX |
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mAdc |
(VCE = Rated VCB, VBE(off) = 1.5 Vdc) |
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Ð |
1.0 |
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(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C) |
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Ð |
5.0 |
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Collector Cutoff Current |
ICBO |
Ð |
1.0 |
mAdc |
(VCB = Rated VCB, IE = 0) |
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Emitter±Cutoff Current |
IEBO |
Ð |
1.0 |
mAdc |
(VBE = 7.0 Vdc, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
hFE |
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Ð |
(IC = 3.0 Adc, VCE = 2.0 Vdc) |
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25 |
100 |
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(IC = 6.0 Adc, VCE = 2.0 Vdc) |
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5.0 |
Ð |
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Collector±Emitter Saturation Voltage |
VCE(sat) |
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Vdc |
(IC = 3.0 Adc, IB = 0.3 Adc) |
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Ð |
1.0 |
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(IC = 6.0 Adc, IB = 1.2 Adc) |
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Ð |
2.0 |
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Base±Emitter On Voltage |
VBE(on) |
Ð |
1.5 |
Vdc |
(IC = 3.0 Adc, VCE = 2.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Current±Gain Ð Bandwidth Product |
fT |
1.0 |
Ð |
MHz |
(IC = 0.5 Adc, VCE = 20 Vdc, ftest = 0.5 MHz) |
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Output Capacitance |
Cob |
Ð |
300 |
pF |
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |
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Small±Signal Current Gain |
hfe |
15 |
Ð |
Ð |
(IC = 2.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) |
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* Indicates JEDEC Registered Data
(1)Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%
(2)fT = |hfe| •ftest.
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VCC |
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+ 30 V |
25 μs |
RC |
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+10 V |
SCOPE |
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RB |
0 |
D1 |
51 |
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±10 V |
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tr, tf ≤ 10 ns |
± 4.0 V |
DUTY CYCLE = 1.0%
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA
*For PNP test circuit, reverse all polarities and D1.
Figure 2. Switching Time Test Circuit
2 |
Motorola Bipolar Power Transistor Device Data |
2N5758
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1.0 |
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0.7 |
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tr |
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0.5 |
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μs) |
0.3 |
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VCC = 30 V |
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IC/IB = 10 |
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( |
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VBE(off) = 5.0 V |
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TIME |
0.2 |
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TJ = 25 |
° |
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C |
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t, |
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0.1 |
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td |
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0.07 |
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0.05 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
6.0 |
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0.06 |
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IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn±On Time
r(t), EFFECTIVE TRANSIENT |
THERMAL RESISTANCE (NORMALIZED) |
1.0 |
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0.7 |
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D = 0.5 |
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0.5 |
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0.3 |
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0.2 |
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0.2 |
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0.1 |
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P(pk) |
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θJC = 1.17°C/W MAX |
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0.1 |
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0.05 |
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D CURVES APPLY FOR POWER |
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0.07 |
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PULSE TRAIN SHOWN |
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0.02 |
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t1 |
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0.05 |
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READ TIME AT t1 |
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0.03 |
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0.01 |
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TJ(pk) ± TC = P(pk) θJC(t) |
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t2 |
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DUTY CYCLE, D = t1/t2 |
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0.02 |
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SINGLE PULSE |
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0.01 |
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0.02 0.03 |
0.05 |
0.1 |
0.2 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
20 |
30 |
50 |
100 |
200 |
300 |
500 |
1000 |
0.01 |
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t, TIME (ms) |
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Figure 4. Thermal Response
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10 |
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0.05 ms |
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(AMP) |
5.0 |
TJ = 200°C |
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0.1 ms |
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3.0 |
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0.5 ms |
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CURRENT |
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2.0 |
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1.0 |
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COLLECTOR |
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BONDING WIRE |
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1.0 ms |
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0.5 |
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LIMITED |
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0.3 |
THERMALLY LIMITED |
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5.0 ms |
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, |
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@ TC = 25°C |
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C |
0.2 |
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I |
SECOND BREAKDOWN LIMITED |
2N5760 |
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0.1 |
CURVES APPLY BELOW RATED VCEO |
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2N5758 |
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20 |
30 |
50 |
70 |
100 |
200 |
30 |
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10 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 5. Active±Region Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
Motorola Bipolar Power Transistor Device Data |
3 |
2N5758
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6.0 |
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VCC = 30 V |
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4.0 |
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IB1 = IB2 |
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3.0 |
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IC/IB = 10 |
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TJ = 25°C |
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μs) |
2.0 |
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ts |
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t, TIME ( |
1.0 |
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0.6 |
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tf |
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0.4 |
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0.3 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
6.0 |
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0.06 |
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IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn±Off Time
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400 |
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300 |
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TJ = 25°C |
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(pF) |
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CAPACITANCE |
200 |
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Cib |
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100 |
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80 |
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C, |
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60 |
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Cob |
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40 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
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0.1 |
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VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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500 |
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° |
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VCE = 2.0 V |
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200 |
TJ = 150 C |
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GAIN |
100 |
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25°C |
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, DC CURRENT |
50 |
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20 |
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± 55°C |
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FE |
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h |
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10 |
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5.0 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
6.0 |
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0.06 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 8. DC Current Gain
4 |
Motorola Bipolar Power Transistor Device Data |
2N5758
PACKAGE DIMENSIONS
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A |
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N |
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NOTES: |
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C |
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1. DIMENSIONING AND TOLERANCING PER ANSI |
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Y14.5M, 1982. |
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±T± |
SEATING |
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2. CONTROLLING DIMENSION: INCH. |
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PLANE |
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3. ALL RULES AND NOTES ASSOCIATED WITH |
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REFERENCED TO±204AA OUTLINE SHALL APPLY. |
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D 2 PL |
K |
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INCHES |
MILLIMETERS |
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0.13 (0.005) M |
T |
Q |
M |
Y |
M |
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DIM |
MIN |
MAX |
MIN |
MAX |
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U |
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A |
1.550 REF |
39.37 REF |
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±Y± |
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B |
±±± |
1.050 |
±±± |
26.67 |
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V |
L |
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C |
0.250 |
0.335 |
6.35 |
8.51 |
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2 |
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D |
0.038 |
0.043 |
0.97 |
1.09 |
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B |
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E |
0.055 |
0.070 |
1.40 |
1.77 |
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H |
G |
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G |
0.430 BSC |
10.92 BSC |
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1 |
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H |
0.215 BSC |
5.46 BSC |
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K |
0.440 |
0.480 |
11.18 |
12.19 |
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L |
0.665 BSC |
16.89 BSC |
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±Q± |
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N |
±±± |
0.830 |
±±± |
21.08 |
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0.13 (0.005) M |
T |
Y |
M |
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Q |
0.151 |
0.165 |
3.84 |
4.19 |
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U |
1.187 BSC |
30.15 BSC |
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V |
0.131 |
0.188 |
3.33 |
4.77 |
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STYLE 1: |
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PIN 1. BASE |
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2. EMITTER |
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CASE: COLLECTOR |
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CASE 1±07
TO±204AA (TO±3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data |
5 |
2N5758
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