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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJW21192/D

Complementary Silicon Plastic

Power Transistors

Specifically designed for power audio output, or high power drivers in audio amplifiers.

DC Current Gain Specified up to 8.0 Amperes at Temperature

All On Characteristics at Temperature

High SOA: 20 A, 18 V, 100 ms

TO±247AE Package

MAXIMUM RATINGS

 

 

MJW21191

 

Rating

Symbol

MJW21192

Unit

 

 

 

 

Collector±Emitter Voltage

VCEO

150

Vdc

Collector±Base Voltage

VCB

150

Vdc

Emitter±Base Voltage

VEB

5.0

Vdc

Collector Current Ð Continuous

IC

8.0

Adc

Ð Peak

 

16

 

 

 

 

 

Base Current

IB

2.0

Adc

Total Power Dissipation @ TC = 25_C

PD

100

Watts

Derate above 25_C

 

0.65

W/_C

 

 

 

 

Operating and Storage Junction

TJ, Tstg

± 65 to + 150

_C

Temperature Range

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

RθJC

0.65

_C/W

Thermal Resistance, Junction to Ambient

RθJA

50

_C/W

NPN

MJW21192

PNP

MJW21191

8.0 AMPERES

POWER TRANSISTORS COMPLEMENTARY SILICON

150 VOLTS

100 WATTS

CASE 340K±01

TO±247AE

C, CAPACITANCE (pF)

1000

PNP

NPN

100

10

1.0

1.0

10

100

1000

VR, REVERSE VOLTAGE (V)

Figure 1. Typical Capacitance @ 25°C

Motorola, Inc. 1997

Motorola Bipolar Power Transistor Device Data

MJW21192

MJW21191

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage (1)

VCEO(sus)

 

 

Vdc

 

(IC = 10 mAdc, IB = 0)

 

150

Ð

 

 

Collector Cutoff Current

ICES

 

 

μAdc

 

(VCB = 250 Vdc, IE = 0)

 

Ð

10

 

 

Emitter Cutoff Current

IEBO

 

 

μAdc

 

(VBE = 5.0 Vdc, IC = 0)

 

Ð

10

 

 

ON CHARACTERISTICS (1)

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE

 

 

Ð

 

(IC = 4.0 Adc, VCE = 2.0 Vdc)

 

15

Ð

100

 

(IC = 8.0 Adc, VCE = 2.0 Vdc)

 

5.0

Ð

 

 

Collector±Emitter Saturation Voltage

VCE(sat)

 

 

Vdc

 

(IC = 4.0 Adc, IB = 0.4 Adc)

 

Ð

1.0

 

 

(IC = 8.0 Adc, IB = 1.6 Adc)

 

Ð

2.0

 

 

Base±Emitter On Voltage

VBE(on)

Ð

2.0

Vdc

 

(IC = 4.0 Adc, VCE = 2.0 Vdc)

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Current Gain Ð Bandwidth Product (2)

fT

4.0

Ð

MHz

 

(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)

 

 

 

 

(1)Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

(2)fT = hfeftest.

 

 

1.0

 

 

 

 

 

 

 

 

DUTY

 

 

 

D = 0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CYCLE,

 

RESISTANCE (NORMALIZED)

 

 

 

 

 

 

 

 

P(pk)

D = t1/t2

TRANSIENT THERMAL

 

0.2

 

 

 

 

 

 

 

 

0.1

0.1

 

 

 

 

 

 

t1

 

 

 

 

 

 

 

 

t2

 

 

0.05

 

 

 

 

 

ZθJC(t) = r(t) RθJC

 

 

 

 

 

 

 

RθJC = 1.65°C/W MAX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D CURVES APPLY FOR POWER

 

0.02

 

 

 

 

 

PULSE TRAIN SHOWN

 

 

 

 

 

 

 

 

 

 

READ TIME AT t1

 

 

 

0.01

0.01

 

 

 

 

 

TJ(pk) ± TC = P(pk) ZθJC(t)

 

 

0.00001

0.0001

0.001

0.01

0.1

1.0

10

100

1000

 

 

 

t, TIME (s)

Figure 2. Thermal Response

2

Motorola Bipolar Power Transistor Device Data

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate.

MJW21192 MJW21191

The data of Figures 3 and 4 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown.

 

 

NPN Ð MJW21192

 

 

100

 

 

 

(AMPS)

 

 

10 ms

 

 

100 ms

 

 

CURRENT

10

 

 

 

 

250 ms

 

 

 

 

 

 

, COLLECTOR

1.0

 

 

 

 

 

 

 

C

 

 

 

 

I

 

 

 

 

 

0.1

 

 

 

 

1.0

10

100

1000

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

Figure 3. NPN Ð MJW21192

Safe Operating Area

 

PNP Ð MJW21191

(AMPS)

100

10 ms

 

CURRENT

100 ms

10

 

COLLECTOR,

250 ms

1.0

 

C

 

I

 

 

0.1

1.0

10

100

1000

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

Figure 4. PNP Ð MJW21191

Safe Operating Area

 

 

 

 

TYPICAL CHARACTERISTICS

 

 

 

 

 

 

 

NPN Ð MJW21192

 

 

 

 

 

PNP Ð MJW21191

 

 

 

1000

 

 

 

 

 

1000

 

 

 

 

 

 

 

 

 

 

 

100°C

50°C

 

 

 

 

 

°

 

 

 

 

 

 

 

 

GAIN

100°C

50 C

 

 

 

GAIN

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

100

 

 

 

 

,DC CURRENT

 

 

 

 

,DC CURRENT

 

 

 

 

 

 

 

 

 

25°C

 

 

 

 

25°C

 

 

 

 

 

 

 

 

 

10

 

 

 

 

10

 

 

 

 

FE

 

 

 

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

h

 

 

 

 

 

 

1.0

0.1

 

10

100

 

1.0

0.1

 

10

 

 

0.01

1.0

 

0.01

1.0

100

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

Figure 5. NPN Ð MJW21192

Figure 6. PNP Ð MJW21191

VCE = 2.0 V DC Current Gain

VCE = 2.0 V DC Current Gain

Motorola Bipolar Power Transistor Device Data

3

MJW21192

MJW21191

 

 

 

 

 

 

 

NPN Ð MJW21192

 

 

 

 

1000

 

 

 

 

 

1000

GAIN

 

 

50°C

 

 

GAIN

 

100

100°C

 

 

 

100

,DC CURRENT

 

 

 

 

,DC CURRENT

 

25°C

 

 

 

 

10

 

 

 

 

10

FE

 

 

 

 

FE

 

 

 

 

 

 

h

 

 

 

 

 

h

 

 

1.0

0.01

0.1

1.0

10

100

1.0

 

 

 

 

 

PNP Ð MJW21191

 

 

 

 

50°C

 

 

100°C

 

 

 

 

25°C

 

 

 

 

0.01

0.1

1.0

10

100

IC, COLLECTOR CURRENT (AMPS)

I , COLLECTOR CURRENT (AMPS)

 

C

Figure 7. NPN Ð MJW21192

Figure 8. PNP Ð MJW21191

VCE = 5.0 V DC Current Gain

VCE = 5.0 V DC Current Gain

 

1.0

 

 

(VOLTS)

 

 

100°C

 

 

25°C

 

 

 

V, VOLTAGE

0.1

 

 

 

 

 

 

0.01

 

 

 

0.1

1.0

10

IC, COLLECTOR CURRENT (AMPS)

 

 

Figure 9. NPN Ð MJW21192

 

 

 

VCE(sat) IC/IB = 5.0

 

 

1.0

 

 

 

 

 

100°C

(VOLTS)

 

 

25°C

 

 

 

V, VOLTAGE

0.1

 

 

 

 

 

 

0.01

 

 

 

0.1

1.0

10

IC, COLLECTOR CURRENT (AMPS)

Figure 11. NPN Ð MJW21192

VCE(sat) IC/IB = 10

 

1.0

 

 

(VOLTS)

 

 

 

V, VOLTAGE

0.1

 

 

100°C

 

 

 

25°C

 

 

 

0.01

 

 

 

0.1

1.0

10

IC, COLLECTOR CURRENT (AMPS)

 

 

Figure 10. PNP Ð MJW21191

 

 

 

VCE(sat) IC/IB = 5.0

 

 

10

 

 

V,VOLTAGE (VOLTS)

1.0

 

 

0.1

 

 

 

100°C

 

 

 

25°C

 

 

 

0.01

 

 

 

0.1

1.0

10

IC, COLLECTOR CURRENT (AMPS)

Figure 12. PNP Ð MJW21191

VCE(sat) IC/IB = 10

4

Motorola Bipolar Power Transistor Device Data

 

 

 

NPN Ð MJW21192

 

 

 

10

 

 

 

 

(VOLTS)

 

 

 

 

 

VOLTAGE

1.0

50°C

 

 

 

25°C

 

 

 

 

 

 

 

V,

 

 

 

 

 

 

100°C

 

 

 

 

 

0.1

0.01

0.1

 

 

 

0.001

1.0

10

IC, COLLECTOR CURRENT (AMPS)

Figure 13. NPN Ð MJW21192

VCE = 2.0 V VBE(on) Curve

 

 

 

MJW21192

MJW21191

 

 

 

PNP Ð MJW21191

 

 

 

10

 

 

 

 

(VOLTS)

 

 

 

 

 

VOLTAGE

1.0

50°C

 

 

 

25°C

 

 

 

V,

 

 

 

 

 

 

100°C

 

 

 

 

 

0.1

0.01

0.1

 

 

 

0.001

1.0

10

IC, COLLECTOR CURRENT (AMPS)

Figure 14. PNP Ð MJW21191

VCE = 2.0 V VBE(on) Curve

Motorola Bipolar Power Transistor Device Data

5

MJW21192 MJW21191

PACKAGE DIMENSIONS

 

±Q±

 

 

±T±

 

 

 

 

 

 

 

 

E

 

 

 

 

 

0.25 (0.010) M T

B

M

±B±

 

NOTES:

 

 

 

 

 

C

 

 

 

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

 

 

 

 

4

Y14.5M, 1982.

 

 

 

 

 

U

 

 

L

2. CONTROLLING DIMENSION: MILLIMETER.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MILLIMETERS

INCHES

 

A

 

 

 

 

DIM

MIN

MAX

MIN

MAX

 

 

 

 

R

A

19.7

20.3

0.776

0.799

 

 

 

 

 

B

15.3

15.9

0.602

0.626

 

 

 

 

 

 

 

 

1

2

3

 

C

4.7

5.3

0.185

0.209

 

 

 

D

1.0

1.4

0.039

0.055

 

 

 

 

 

 

 

 

 

 

 

 

E

1.27 REF

0.050 REF

 

 

 

 

 

±Y±

F

2.0

2.4

0.079

0.094

 

 

P

 

 

G

5.5 BSC

0.216 BSC

 

K

 

 

 

H

2.2

2.6

0.087

0.102

 

 

 

 

 

 

 

 

 

 

J

0.4

0.8

0.016

0.031

 

 

 

 

 

 

 

 

 

 

 

 

K

14.2

14.8

0.559

0.583

 

 

 

 

 

 

L

5.5 NOM

0.217 NOM

 

 

 

 

V

H

P

3.7

4.3

0.146

0.169

 

 

F

 

Q

3.55

3.65

0.140

0.144

 

 

G

 

J

R

5.0 NOM

0.197 NOM

 

 

 

 

 

 

D

 

 

U

5.5 BSC

0.217 BSC

 

 

 

 

 

V

3.0

3.4

0.118

0.134

0.25 (0.010) M

Y

Q S

 

 

 

 

 

 

 

 

CASE 340K±03 (TO±247AE)

ISSUE A

6

Motorola Bipolar Power Transistor Device Data

MJW21192 MJW21191

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Motorola Bipolar Power Transistor Device Data

7

MJW21192 MJW21191

 

Mfax is a trademark of Motorola, Inc.

How to reach us:

 

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8

Motorola Bipolar Power Transistor Device Data

 

MJW21192/D

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