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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE5740/D

		MJE5740
	NPN Silicon Power	MJE5741*
	NPN Silicon Power	MJE5742*
	Darlington Transistors	MJE5742*

The MJE5740, 41, 42 Darlington transistors are designed for high±voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:

•Small Engine Ignition

•Switching Regulators

•Inverters

•Solenoid and Relay Drivers

•Motor Controls

MAXIMUM RATINGS

Rating	Symbol	MJE5740	MJE5741	MJE5742	Unit

Collector±Emitter Voltage	VCEO(sus)	300	350	400	Vdc
Collector±Emitter Voltage	VCEV	600	700	800	Vdc
Emitter Base Voltage	VEB		8		Vdc
Collector Current Ð Continuous	IC		8		Adc
Ð Peak (1)	ICM		16
Base Current Ð Continuous	IB		2.5		Adc
Ð Peak (1)	IBM		5
Total Power Dissipation	PD		2		Watts
@ TA = 25_C			2		Watts
Derate above 25_C			16		mW/_C

Total Power Dissipation	PD		80		Watts
@ TC = 25_C			80		Watts
Derate above 25_C			640		mW/_C

Operating and Storage Junction	TJ, Tstg		±65 to +150		_C
Temperature Range

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RqJC	1.56	_C/W
Thermal Resistance, Junction to Ambient	RqJA	62.5	_C/W
Maximum Lead Temperature for Soldering	TL	275	_C
Purposes: 1/8″ from Case for 5 Seconds

*Motorola Preferred Device

POWER DARLINGTON

TRANSISTORS
8 AMPERES
300, 350, 400 VOLTS
80 WATTS
≈ 100	≈ 50

CASE 221A±06

TO±220AB

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS (2)

Collector±Emitter Sustaining Voltage	MJE5740	VCEO(sus)	300	Ð	Ð	Vdc
(IC = 50 mA, IB = 0)	MJE5741		350	Ð	Ð
	MJE5742		400	Ð	Ð

Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)		ICEV	Ð	Ð	1	mAdc
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)			Ð	Ð	5
Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)		IEBO	Ð	Ð	75	mAdc
SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased		IS/b		See Figure 6
Clamped Inductive SOA with Base Reverse Biased		RBSOA		See Figure 7
(2) Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.						(continued)

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola, Inc. 1995

MJE5740 MJE5741 MJE5742

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25_C unless otherwise noted)

	Characteristic			Symbol	Min	Typ	Max	Unit

ON CHARACTERISTICS (1)

DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)				hFE	50	100	Ð	Ð
(IC = 4 Adc, VCE = 5 Vdc)					200	400	Ð
Collector±Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)				VCE(sat)	Ð	Ð	2	Vdc
				VCE(sat)	Ð	Ð	2	Vdc
Collector±Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)					Ð	Ð	3
Collector±Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)					Ð	Ð	2.2
Base±Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)				VBE(sat)	Ð	Ð	2.5	Vdc
Base±Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)					Ð	Ð	3.5
Base±Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)					Ð	Ð	2.4
Diode Forward Voltage (2) (IF = 5 Adc)				Vf	Ð	Ð	2.5	Vdc
SWITCHING CHARACTERISTICS

Typical Resistive Load (Table 1)

Delay Time				td	Ð	0.04	Ð	μs
Rise Time	(VCC = 250 Vdc, IC(pk) = 6 A			tr	Ð	0.5	Ð	μ
Rise Time			μ	tr	Ð	0.5	Ð	s
	IB1 = IB2 = 0.25 A, tp = 25 s,
Storage Time				ts	Ð	8	Ð	μs

	Duty Cycle v 1%)
Fall Time				tf	Ð	2	Ð	μs
Inductive Load, Clamped (Table 1)

Voltage Storage Time	(I	= 6 A, V	= 250 Vdc	tsv	Ð	4	Ð	μs
	C(pk)	CE(pk)
Crossover Time	IB1 = 0.06 A, VBE(off) = 5 Vdc)			tc	Ð	2	Ð	μs

(1)Pulse Test: Pulse Width 300 μs, Duty Cycle = 2%.

(2)The internal Collector±to±Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the

(2)Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.

TYPICAL CHARACTERISTICS

100

IC(pk)

VCE(pk)

(%)

SECOND BREAKDOWN DERATING

90% VCE(pk)

90% IC

FACTOR

tsv

trv

tfi

tti

DERATING

THERMAL DERATING

VCE

10% VCE(pk)

10%

2% IC

90% I

C(pk)

POWER

100

120

140

160

TIME

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Figure 2. Inductive Switching Measurements

	2000					2.4
	1000	150°C			(VOLTS)	2.2
	1000					2
CURRENT GAIN	VCE = 5 V					2

		+ 25°C			VOLTAGE	1.8
						1.8
						1.6
	100	± 55°C				1.4

, DC					BASE±EMITTER	1.2
						1.2
						1
FE						1
FE
h						0.8
					,
					BE	0.6
					V	0.6
	10					0.4
	0.1	1	2	5	10
		IC, COLLECTOR CURRENT (AMPS)

	hFE = 20
± 55°C
+ 25°C
	+150°C
0.2	0.5	1	2	5	10
	IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain

Figure 4. Base±Emitter Voltage

2	Motorola Bipolar Power Transistor Device Data

MJE5740 MJE5741 MJE5742

Table 1. Test Conditions for Dynamic Performance

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

+ 5 V

VCC

1N4933

MJE210

0.001 μF

MR826*

CIRCUITS

33 1N4933

DUTY CYCLE ≤ 10%

2N2222

Vclamp

1 k

*SELECTED FOR ≥

TEST

tr, tf ≤ 10 ns

+ 5 V

1 kV

VCE

1 k

5.1 k

1 k

T.U.T.

1N4933

0.02 μF 270

2N2905

MJE200

NOTE:

100

PW and VCC Adjusted for Desired IC

1/2 W

± V

RB Adjusted for Desired IB1

CIRCUIT VALUES

BE(off)

FULL BOBBIN (~16 TURNS) #16

Lcoil = 200 μH

IC(pk) = 6 A

COIL DATA:

GAP FOR 200 μH/20 A

VCC = 30 V

FERROXCUBE CORE #6656

VCE(pk) = 250 Vdc

OUTPUT WAVEFORMS

WAVEFORMS

tf CLAMPED

VCC

t1 ADJUSTED TO

IC(pk)

OBTAIN IC

TEST EQUIPMENT

Lcoil

(ICpk)

t1 ≈

SCOPE±TEKTRONICS

TEST

VCE

Vclamp

≈

475 OR EQUIVALENT

VCE OR

C )

coil

TIME

Vclamp

RESISTIVE

SWITCHING

+VCC

	TUT
RB	SCOPE

± 4 V

VCC = 250 V

D1 = 1N5820 OR EQUIV.

+10 V

25 μs

± 9.2 V

tr, tf < 10 ns

DUTY CYCLE = 1%

RB AND RC ADJUSTED FOR DESIRED IB AND IC

(VOLTS	1.8
(VOLTS
VOLTAGE	1.6	hFE = 20
	1.4
	1.2
, COLLECTOR±EMITTER	1.2
	1		± 55°C
	0.8	+ 25°C
		+ 25°C
	0.6	+150°C
	0.4
	0.2
CE	0.1
V		0.2	0.5	1	2	5	10

IC, COLLECTOR CURRENT (AMPS)

Figure 5. Inductive Switching Measurements

Motorola Bipolar Power Transistor Device Data

MJE5740 MJE5741 MJE5742

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 6 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 6 may be found at any case temperature by using the appropriate curve on Figure 1.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage±current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives the complete RBSOA characteristics.

The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.

	16
(AMPS)	10
	8				100 μs
					100 μs
	3
CURRENT	3					10 μs
						10 μs
	1		5 ms
	1

,COLLECTOR	0.5		BONDING WIRE LIMIT			1 ms
	0.3		BONDING WIRE LIMIT
	0.3		THERMAL LIMIT		dc
			THERMAL LIMIT		dc
			(SINGLE PULSE)
	0.1		SECOND BREAKDOWN LIMIT
C					MJE5742
I	0.05	CURVES APPLY BELOW RATED VCEO			MJE5742
	0.05	CURVES APPLY BELOW RATED VCEO			MJE5741
	0.02				MJE5740
	0.02
	5	10	20	50	100	200	400
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 6. Forward Bias Safe Operating Area

	16
(AMPS)	14
	12

CURRENT	10
	8

,COLLECTOR	6	VBE(off) ≤ 5 V
	6	TJ = 100°C
		TJ = 100°C
	4		MJE5742
			MJE5742
			MJE5741
C	2		MJE5741
C
I			MJE5740
			MJE5740
	0
	0	100	200	300	400	500

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 7. Reverse Bias Safe Operating Area

RESISTIVE SWITCHING PERFORMANCE

t, TIME ( μs)

1		tr
0.7
0.5
0.3
0.2		td						VCC = 250 V
								IB1 = IB2
0.1								IC/IB = 20
0.07
0.05
0.03
0.02
0.2	0.3	0.5	0.7	1	2	3	5	7	10

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Turn±On Time

	10
	7					ts
	5					ts
	5
μs)	3
μs)	2
(
t, TIME
t, TIME	1								VCC = 250 V
	1								VCC = 250 V
	0.7								IB1 = IB2
	0.5					t			IC/IB = 20
						f
	0.3
	0.2		0.5	0.7	1	2				10
	0.2	0.3	0.5	0.7	1	2	3	5	7	10

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Turn±Off Time

4	Motorola Bipolar Power Transistor Device Data

MJE5740 MJE5741 MJE5742

PACKAGE DIMENSIONS

				±T±
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z
L				R
V				J
G
			D
	N

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

CASE 221A±06

TO±220AB

ISSUE Y

STYLE 1:

PIN 1. BASE

2.COLLECTOR

3.EMITTER

4.COLLECTOR

Motorola Bipolar Power Transistor Device Data

MJE5740 MJE5741 MJE5742

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊ MJE5740/D

*MJE5740/D*

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