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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BU323A/D

NPN Silicon Power Darlington

Transistor

The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.

VCE Sat Specified at ±40_C = 2.0 V Max. at IC = 6 A.

COLLECTOR

 

Photoglass Passivation for Reliability and Stability.

 

BU323A

16 AMPERE PEAK POWER TRANSISTOR DARLINGTON NPN SILICON

400 VOLTS

175 WATTS

BASE

 

≈ 1 k

≈ 30

EMITTER

CASE 1±07

TO±204AA

 

 

(TO±3)

MAXIMUM RATINGS

 

 

Rating

Symbol

Value

Unit

 

 

 

 

Collector±Emitter Voltage

VCEO(sus)

400

Vdc

Collector±Base Voltage

VCBO

600

Vdc

Emitter±Base Voltage

VEBO

8.0

Vdc

Collector Current Ð Continuous

IC

10

Adc

Peak (1)

 

16

 

 

 

 

 

Base Current Ð Continuous

IB

3.0

Adc

Total Power Dissipation @ TC = 25_C

PD

175

Watts

@ TC = 100_C

 

100

Watts

Derate above 25_C

 

1.0

W/_C

 

 

 

 

Operating and Storage Junction

TJ, Tstg

± 65 to +200

_C

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

RqJC

1.0

_C/W

Maximum Lead Temperature for Soldering

TL

275

_C

Purposes: 1/8″ from Case for 5 Seconds

 

 

 

 

 

 

 

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

REV 7

Motorola, Inc. 1995

BU323A

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS1

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage (Figure 1)

VCEO(sus)

 

 

 

Vdc

L = 10 mH

 

 

 

 

 

 

(IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO)

 

400

 

 

 

Collector±Emitter sustaining Voltage (Figure 1)

VCER(sus)

 

 

 

Vdc

(IC = 3 A, RBE = 100 Ohms, L = 500 μH)

 

 

 

 

 

Unclamped

 

 

475

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current (Rated VCER, RBE = 100 Ohms)

ICER

 

 

1

mAdc

Collector Cutoff Current (Rated VCBO, IE = 0)

ICBO

 

 

1

mAdc

Emitter Cutoff Current (VEB = 6 Vdc, IC = 0)

IEBO

 

 

40

mAdc

ON CHARACTERISTICS1

 

 

 

 

 

 

DC Current Gain

 

hFE

 

 

 

 

(IC = 3 Adc, VCE = 6 Vdc)

 

 

300

550

 

 

(IC = 6 Adc, VCE = 6 Vdc)

 

 

150

350

2000

 

(IC = 10 Adc, VCE = 6 Vdc)

 

 

50

150

 

 

Collector±Emitter Saturation Voltage

 

VCE(sat)

 

 

 

Vdc

(IC = 3 Adc, IB = 60 mAdc)

 

 

 

 

1.5

 

(IC = 6 Adc, IB = 120 mAdc)

 

 

 

 

1.7

 

(IC = 10 Adc, IB = 300 mAdc)

 

 

 

 

2.7

 

(IC = 6 Adc, IB = 120 mAdc, TC = ±40_C)

 

 

 

2.0

 

Base±Emitter Saturation Voltage

 

VBE(sat)

 

 

 

Vdc

(IC = 6 Adc, IB = 120 mAdc)

 

 

 

 

2.2

 

(IC = 10 Adc, IB = 300 mAdc)

 

 

 

 

3

 

(IC = 6 Adc, IB = 120 mAdc, TC = ±40_C)

 

 

 

2.4

 

Base±Emitter On Voltage (IC = 10 Adc, VCE = 6 Vdc)

VBE(on)

 

 

2.5

Vdc

Diode Forward Voltage (IF = 10 Adc)

 

Vf

 

2

3.5

Vdc

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz)

Cob

 

165

350

pF

SWITCHING CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Storage Time

 

(VCC ± 12 Vdc, IC = 6 Adc,

ts

 

7.5

15

μs

Fall Time

 

IB1 = IB2 = 0.3 Adc) Fig. 2

tf

 

5.2

15

μs

FUNCTIONAL TESTS

 

 

 

 

 

 

 

 

 

 

 

 

Second Breakdown Collector Current with

IS/B

 

See

 

 

Base±Forward Biased

 

 

 

Figure10

 

 

 

 

 

 

 

 

 

Pulsed Energy Test (See Figure 12)

 

IC2L / 2

550

 

 

mJ

1 Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2%.

 

VCC = 16 Vdc

 

 

UNCLAMPED

 

 

L

 

0 V

 

 

 

 

 

 

 

*

 

 

CLAMPED

t1

 

 

20 ms

47

 

 

C

 

1N4001

B

 

 

 

 

 

 

470

BC337

TUT

 

 

 

 

*

Vclamp

 

 

1K

 

 

30

 

 

VCEO

VCER

 

 

* Adjust t1 such that

 

100

 

E

 

 

 

* IC reaches Required

 

 

 

 

* value.

 

 

 

 

ftest = 200 Hz

VCC = 12 Vdc

PULSE WIDTH = 1 ms

2 Ω/20 W

 

 

 

 

 

 

 

 

15 Vdc

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = 6 Adc

 

 

 

 

 

 

 

 

0 Vdc

 

 

 

 

 

 

 

 

 

 

 

C

40

 

B

 

1N4001

 

 

TUT

51

100

1K

30

 

 

 

 

 

E

IB = 0.3 Adc

 

 

 

Figure 1. Sustaining Voltage Test Circuit

Figure 2. Switching Times Test Circuit

3±232

Motorola Bipolar Power Transistor Device Data

 

2000

 

 

 

 

 

 

 

 

 

 

 

1000

 

 

 

 

TJ = 150°C

 

 

 

GAIN

700

 

 

 

 

 

 

 

 

 

 

500

 

 

 

25°C

 

 

 

 

 

 

, DC CURRENT

300

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

FE

70

 

 

 

 

 

VCE = 3 Vdc

 

 

 

h

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCE = 6 Vdc

 

 

 

 

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

 

20

0.2

0.3

0.5

0.7

1

2

3

5

7

10

 

0.1

IC, COLLECTOR CURRENT (AMP)

Figure 3. DC Current Gain

(V)

 

 

 

 

 

 

 

VOLTAGE

1.7

 

 

 

 

 

 

1.6

 

 

 

 

 

 

SATURATION

1.5

IC/IB = 50

 

 

 

 

 

1.4

 

 

 

 

 

 

1.3

 

 

 

 

 

 

1.2

 

 

 

 

 

 

, COLLECTOR±EMITTER

 

 

 

 

 

 

1.1

 

 

 

 

 

 

1.0

 

 

 

 

 

 

0.9

 

 

 

 

 

 

0.8

 

 

 

 

TJ

 

0.7

 

 

 

 

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

CE(sat)

0.5

0.2

0.5

1.0

2.0

5.0

10

0.1

 

 

 

 

 

 

 

V

 

 

IC, COLLECTOR CURRENT (A)

 

 

 

 

 

 

 

Figure 5. Collector±Emitter Saturation Voltage

 

10

 

 

 

 

 

 

 

 

 

 

 

7

 

 

 

 

ts

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

 

μs)

2

 

 

 

 

tf

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

 

 

 

 

TIME

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t,

0.7

 

 

 

 

TJ = 25°C

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

IC/IB = 20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

VCE = 12 Vdc

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

0.1

0.3

0.5

0.7

1

2

3

5

7

10

20

 

0.2

IC, COLLECTOR CURRENT (AMP)

Figure 7. Turn±Off Switching Time

 

 

 

 

 

 

 

 

BU323A

(VOLTS)

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

VOLTAGE

2.5

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

, COLLECTOR±EMITTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10 A

 

 

1.5

 

3

 

6

 

 

 

 

 

 

 

 

 

 

 

 

 

1

IC = 0.5 A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

0.5

 

 

 

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

2

 

 

 

 

IB, BASE CURRENT (AMP)

 

 

 

Figure 4. Collector Saturation Region

(V)

 

 

 

 

 

 

 

VOLTAGE

2.2

 

 

 

 

 

 

2.1

 

 

 

 

 

 

SATURATION

2.0

TJ = 25°C

 

 

 

 

 

1.9

 

 

 

 

 

 

1.8

 

 

 

 

 

 

1.7

 

 

 

 

 

 

, COLLECTOR±EMITTER

 

 

 

TJ

 

 

1.6

 

 

 

 

 

 

 

 

 

 

 

1.5

 

 

 

 

 

 

1.4

 

 

 

 

 

 

1.3

 

 

 

 

 

 

1.2

 

 

 

 

 

 

1.1

 

 

 

 

 

 

CE(sat)

1.0

0.2

0.5

1.0

2.0

5.0

10

0.1

 

 

 

 

 

 

 

V

 

 

IC, COLLECTOR CURRENT (A)

 

 

 

 

 

 

 

Figure 6. Base±Emitter Voltage

 

104

 

 

VCE = 250 Vdc

 

 

 

μA)

103

 

 

TJ = 150°C

 

 

 

(

 

 

 

 

 

 

 

CURRENT

102

 

 

IC = ICES

 

 

 

,COLLECTOR

101

75°C

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

C

25°C

 

 

 

 

 

I

 

 

 

 

 

 

10 ±1

REVERSE

 

 

FORWARD

 

 

0

+ 0.2

+ 0.4

+ 0.6

+ 0.8

 

± 0.2

VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 8. Collector Cutoff Region

Motorola Bipolar Power Transistor Device Data

3±233

BU323A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TRANSIENT THERMAL RESISTANCE

 

0.7

D = 0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(NORMALIZED)

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

0.05

 

 

 

 

 

 

RθJC(t) = r(t) RθJC

 

P(pk)

 

 

 

0.07

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RθJC = °C/W MAX

 

 

 

 

 

 

0.05

 

 

0.02

 

 

 

 

D CURVES APPLY FOR POWER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.03

 

 

 

 

 

 

PULSE TRAIN SHOWN

 

 

t1

 

 

 

 

 

0.01

 

 

 

 

 

 

 

 

 

0.02

 

 

 

 

 

 

READ TIME AT t1

 

 

 

 

t2

 

 

SINGLE PULSE

 

 

 

 

 

 

 

 

 

 

 

r(t),

 

 

 

 

 

 

TJ(pk) ± TC = P(pk) RθJC(t)

 

 

DUTY CYCLE, D = t /t

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1 2

 

 

 

0.01

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

0.02

0.05

0.1

0.2

0.5

1

2

5

10

20

50

100

200

500

1000

2000

t, TIME (ms)

Figure 9. Thermal Response

 

50

 

 

 

 

 

 

 

 

 

(AMP)

20

 

 

 

 

 

 

 

100 μs

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

5.0 ms

 

 

 

CURRENT

 

 

 

 

1.0 ms

 

2

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COLLECTOR

0.2

 

TC = 25°C

 

 

dc

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BONDING WIRE LIMIT

 

 

 

 

 

,

 

 

THERMAL LIMIT (SINGLE PULSE)

 

 

 

C

 

 

 

 

 

I

 

 

 

 

 

 

0.01

 

SECOND BREAKDOWN LIMIT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.005

10

20

30

50

70

100

200

300

500

 

5

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 10. Forward Bias Safe Operating Area

 

100

 

 

 

 

 

(%)

80

 

 

SECOND BREAKDOWN

 

 

 

 

DERATING

 

FACTOR

 

 

 

 

 

 

 

 

 

60

 

THERMAL

 

 

 

DERATING

 

 

 

 

 

 

 

 

 

 

 

DERATING

 

 

 

40

 

 

 

 

 

 

 

 

 

 

 

POWER

20

 

 

 

 

 

 

 

 

 

 

 

 

0

40

80

120

160

200

 

0

 

 

 

TC, CASE TEMPERATURE (°C)

 

Figure 11. Power Derating

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 10 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 11.

TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown.

INDUCTIVE LOAD

VCC = 16 Vdc

<1

11 mH

 

 

 

 

 

 

t1

VZ

 

 

 

 

 

 

 

0 Vdc

 

 

 

 

47

 

 

 

C

50 ms

 

 

 

 

 

 

2.2

1N4001

 

B

 

 

 

 

470

 

 

 

 

 

 

 

BC337

 

 

 

TUT

 

 

1K

30

0.22

 

 

μF

VZ = 400 V (BU323A)

100

 

 

 

at IZ = 20 mA

1N4001

 

 

E

 

 

 

 

t1 to be selected such that IC reaches 10 Adc before switch±off.

NOTE: Figure 12 specifies energy handling capabilities in an automotive ignition circuit.

Figure 12. Ignition Test Circuit

3±234

Motorola Bipolar Power Transistor Device Data

BU323A

PACKAGE DIMENSIONS

 

A

 

 

 

 

 

 

 

 

 

 

 

 

N

 

 

 

 

 

 

NOTES:

 

 

 

 

 

C

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

 

 

 

 

 

 

Y14.5M, 1982.

 

 

 

 

 

±T±

SEATING

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

E

 

 

PLANE

 

 

3. ALL RULES AND NOTES ASSOCIATED WITH

 

 

 

 

 

 

 

REFERENCED TO±204AA OUTLINE SHALL APPLY.

 

D 2 PL

K

 

 

 

 

 

 

 

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

 

 

 

 

 

0.13 (0.005) M

T

Q

M

Y

M

 

 

DIM

MIN

MAX

MIN

MAX

 

U

 

 

 

 

 

 

A

1.550 REF

39.37 REF

 

±Y±

 

 

 

 

B

±±±

1.050

±±±

26.67

V

L

 

 

 

 

 

 

 

 

 

 

C

0.250

0.335

6.35

8.51

 

2

 

 

 

 

 

 

D

0.038

0.043

0.97

1.09

 

 

B

 

 

 

 

E

0.055

0.070

1.40

1.77

H

G

 

 

 

 

 

G

0.430 BSC

10.92 BSC

1

 

 

 

 

 

 

H

0.215 BSC

5.46 BSC

 

 

 

 

 

 

 

K

0.440

0.480

11.18

12.19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

0.665 BSC

16.89 BSC

 

±Q±

 

 

 

 

 

 

N

±±±

0.830

±±±

21.08

 

0.13 (0.005) M

T

Y

M

 

 

 

Q

0.151

0.165

3.84

4.19

 

 

 

 

U

1.187 BSC

30.15 BSC

 

 

 

 

 

 

 

 

V

0.131

0.188

3.33

4.77

 

 

 

 

 

 

 

 

STYLE 1:

 

 

 

 

 

 

 

 

 

 

 

PIN 1. BASE

 

 

 

 

 

 

 

 

 

 

 

2. EMITTER

 

 

 

 

 

 

 

 

 

 

CASE: COLLECTOR

 

 

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola Bipolar Power Transistor Device Data

3±235

BU323A

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

BU323A/D

*BU323A/D*

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