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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N3442/D

High-Power Industrial

Transistors

NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches.

Collector ±Emitter Sustaining Voltage Ð

VCEO(sus) = 140 Vdc (Min)

Excellent Second Breakdown Capability

*MAXIMUM RATINGS

2N3442

10 AMPERE

POWER TRANSISTOR

NPN SILICON

140 VOLTS

117 WATTS

CASE 1±07 TO±204AA (TO±3)

Rating

Symbol

Value

Unit

 

 

 

 

Collector±Emitter Voltage

VCEO

140

Vdc

Collector±Base Voltage

VCB

160

Vdc

Emitter±Base Voltage

VEB

7.0

Vdc

Collector Current Ð Continuous

IC

10

Adc

Collector Current Ð Peak

 

15**

 

 

 

 

 

Base Current Ð Continuous

IB

7.0

Adc

Peak

 

Ð

 

 

 

 

 

Total Power Dissipation @ TC = 25_C

PD

117

Watts

Derate above 25_C

 

0.67

W/_C

 

 

 

 

Operating and Storage Junction

TJ, Tstg

± 65 to +200

_C

Temperature Range

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

RθJC

1.5

_C/W

*Indicates JEDEC Registered Data.

**This data guaranteed in addition to JEDEC registered data.

REV 7

Motorola, Inc. 1995

2N3442

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage

VCEO(sus)

140

Ð

Vdc

(IC = 200 mAdc, IB = 0)

 

 

 

 

Collector Cutoff Current

ICEO

Ð

200

mAdc

(VCE = 140 Vdc, IB = 0)

 

 

 

 

Collector Cutoff Current

ICEX

 

 

mAdc

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)

 

Ð

5.0

 

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)

 

Ð

30

 

Emitter Cutoff Current

IEBO

Ð

5.0

mAdc

(VBE = 7.0 Vdc, IC = 0)

 

 

 

 

ON CHARACTERISTICS (1)

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE

 

 

Ð

(IC = 3.0 Adc, VCE = 4.0 Vdc)

 

20

70

 

(IC = 10 Adc, VCE = 4.0 Vdc)

 

7.5

Ð

 

Collector±Emitter Saturation Voltage

VCE(sat)

Ð

5.0

Vdc

(IC = 10 Adc, IB = 2.0 Adc)

 

 

 

 

Base±Emitter On Voltage

VBE(on)

Ð

5.7

Vdc

(IC = 10 Adc, VCE = 4.0 Vdc)

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Current±Gain Ð Bandwidth Product (2)

fT

80

Ð

kHz

(IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)

 

 

 

 

Small±Signal Current Gain

hfe

12

72

Ð

(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

 

 

 

 

* Indicates JEDEC Registered Data.

 

 

 

 

NOTES:

1.Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%.

2.fT = |hfe| ftest

(NORMALIZED)

1.0

 

 

 

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DISSIPATION

0.6

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

,POWER

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

D(MAX)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

/P

0

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

P

0

25

50

75

100

125

150

175

200

 

 

 

 

TC, CASE TEMPERATURE (°C)

 

 

Figure 1. Power Derating

2

Motorola Bipolar Power Transistor Device Data

2N3442

ACTIVE REGION SAFE OPERATING AREA INFORMATION

IC, COLLECTOR CURRENT (AMP)

20

 

 

 

 

10 μs

10

 

 

7.0

dc

 

5.0

 

 

3.0

30 μs

 

 

 

2.0

 

50 μs

1.0

TJ = 200°C

100 μs

 

1.0 ms

0.7

CURRENT LIMIT

100 ms

0.5

THERMAL LIMIT @ TC = 25°C

 

SINGLE PULSE

 

0.3SECOND BREAKDOWN LIMIT

0.2

3.0

5.0

7.0

10

20

30

50

70

100

200

2.0

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

There are two limitations on the power±handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 200_C; TC is variable depending on conditions. At high case temper-

atures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

 

 

 

 

Figure 2. 2N3442

 

 

 

 

 

400

 

 

TJ = 150°C

 

 

 

 

 

(VOLTS)

 

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

VCE = 4.0 V

 

GAINCURRENT

 

 

 

 

 

 

 

 

 

VOLTAGE

100

 

 

± 55°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25°C

 

 

 

 

 

 

 

60

 

 

 

 

 

 

 

 

COLLECTOR±EMITTER

 

 

 

 

 

 

 

 

 

 

h

40

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, DC

20

 

 

 

 

 

 

 

 

 

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

6.0

 

 

 

 

 

 

 

 

 

,

 

4.0

 

 

 

 

 

 

 

 

 

CE

 

 

 

 

 

 

 

 

 

 

V

 

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

 

1.4

 

 

 

 

 

 

1.2

IC = 1.0 A

 

2.0 A

 

4.0 A

8.0 A

1.0

 

 

 

 

 

 

0.8

 

 

 

 

 

 

0.6

 

 

 

 

 

 

0.4

 

 

 

 

 

 

0.2

TJ = 25°C

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

2.0

5.0

10

20

50

100 200

500 1.0 k 2.0 k

IB, BASE CURRENT (mA)

Figure 3. DC Current Gain

Figure 4. Collector±Saturation Region

Motorola Bipolar Power Transistor Device Data

3

2N3442

PACKAGE DIMENSIONS

 

A

 

 

 

 

 

 

 

 

 

 

 

 

N

 

 

 

 

 

 

NOTES:

 

 

 

 

 

C

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

 

 

 

 

 

 

Y14.5M, 1982.

 

 

 

 

 

±T±

SEATING

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

E

 

 

PLANE

 

 

3. ALL RULES AND NOTES ASSOCIATED WITH

 

 

 

 

 

 

 

REFERENCED TO±204AA OUTLINE SHALL APPLY.

 

D 2 PL

K

 

 

 

 

 

 

 

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

 

 

 

 

 

0.13 (0.005) M

T

Q

M

Y

M

 

 

DIM

MIN

MAX

MIN

MAX

 

U

 

 

 

 

 

 

A

1.550 REF

39.37 REF

 

±Y±

 

 

 

 

B

±±±

1.050

±±±

26.67

V

L

 

 

 

 

 

 

 

 

 

 

C

0.250

0.335

6.35

8.51

 

2

 

 

 

 

 

 

D

0.038

0.043

0.97

1.09

 

 

B

 

 

 

 

E

0.055

0.070

1.40

1.77

H

G

 

 

 

 

 

G

0.430 BSC

10.92 BSC

1

 

 

 

 

 

 

H

0.215 BSC

5.46 BSC

 

 

 

 

 

 

 

K

0.440

0.480

11.18

12.19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

0.665 BSC

16.89 BSC

 

±Q±

 

 

 

 

 

 

N

±±±

0.830

±±±

21.08

 

0.13 (0.005) M

T

Y

M

 

 

 

Q

0.151

0.165

3.84

4.19

 

 

 

 

U

1.187 BSC

30.15 BSC

 

 

 

 

 

 

 

 

V

0.131

0.188

3.33

4.77

 

 

 

 

 

 

 

 

STYLE 1:

 

 

 

 

 

 

 

 

 

 

 

PIN 1. BASE

 

 

 

 

 

 

 

 

 

 

 

 

2. EMITTER

 

 

 

 

 

 

 

 

 

 

CASE: COLLECTOR

 

 

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

2N3442/D

*2N3442/D*

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