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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6274/D

High-Power NPN Silicon

Transistors

. . . designed for use in industrial±military power amplifer and switching circuit applications.

• High Collector Emitter Sustaining Ð

VCEO(sus) = 100 Vdc (Min) Ð 2N6274

VCEO(sus) = 120 Vdc (Min) Ð 2N6275

VCEO(sus) = 150 Vdc (Min) Ð 2N6277

• High DC Current Gain Ð

hFE = 30±120 @ IC = 20 Adc

hFE = 10 (Min) @ IC = 50 Adc

• Low Collector±Emitter Saturation Voltage Ð

VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc

•Fast Switching Times @ IC 20 Adc tr = 0.35 μs (Max)

ts = 0.8 μs (Max) tf = 0.25 μs (Max)

•Complement to 2N6377±79

MAXIMUM RATINGS(1)

Rating	Symbol	2N6274		2N6275	2N6277	Unit

Collector±Base Voltage	VCB	120		140	180	Vdc
Collector±Emitter Voltage	VCEO	100		120	150	Vdc
Emitter±Base Voltage	VEB		6.0			Vdc
Collector Current Ð Continuous	IC		50			Adc
Peak			100

Base Current	IB		20			Adc
Total Device Dissipation @ TC = 25_C	PD		250			Watts
Derate above 25_C			1.43			W/_C

Operating and Storage Junction	TJ, Tstg		± 65 to +200			_C
Temperature Range

THERMAL CHARACTERISTIC

Characteristic					Symbol			Max		Unit

Thermal Resistance, Junction to Case						θJC		0.7		_C/W
(1) Indicates JEDEC Registered Data.
(WATTS)	250
	250
	200

DISSIPATION
	100
	100
, POWER	150
	150
	50




D
P
	0
	0	25	50	75	100	125	150	175	200
	0	25	50	75	100	125	150	175	200

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

2N6274

2N6275

2N6277*

*Motorola Preferred Device

50 AMPERE

POWER TRANSISTORS

NPN SILICON

100, 120, 140, 150 VOLTS

250 WATTS

CASE 197A±05

TO±204AE

(TO±3)

Motorola, Inc. 1995

2N6274		2N6275	2N6277
	*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
			Characteristic	Symbol	Min	Max	Unit

	OFF CHARACTERISTICS

	Collector±Emitter Sustaining Voltage (1)			VCEO(sus)			Vdc
	IC = 50 mAdc, IB = 0)		2N6274		100	Ð
			2N6275		120	Ð
			2N6277		150	Ð

	Collector Cutoff Current			ICEO			μAdc
	(VCE = 50 Vdc, IB = 0)		2N6274		Ð	50
	(VCE = 60 Vdc, IB = 0)		2N6275		Ð	50
	(VCE = 75 Vdc, IB = 0)		2N6277		Ð	50
	Collector Cutoff Current			ICEX
	(VCE = Rated VCB, VEB(off) = 1.5 Vdc)				Ð	10	μAdc
	(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C)				Ð	1.0	mAdc
	Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)			IEBO	Ð	100	μAdc
	ON CHARACTERISTICS (1)

	DC Current Gain			hFE			Ð
	IC = 1.0 Adc, VCE = 4.0 Vdc)				50	Ð
	IC = 20 Adc, VCE = 4.0 Vdc)				30	120
	IC = 50 Adc, VCE = 4.0 Vdc)				10	Ð
	Coliector±Emitter Saturation Voltage			VCE (sat)			Vdc
	IC = 20 Adc, IB = 2.0 Adc)				Ð	1.0
	IC = 50 Adc, IB = 10 Adc)				Ð	3.0
	Base±Emitter Saturation Voltage			VBE(sat)			Vdc
	IC = 20 Adc, IB = 2.0 Adc)				Ð	1.8
	IC = 50 Adc, IB = 10 Adc)				Ð	3.5
	Base±Emitter On Voltage (IC = 20 Adc, VCE = 4.0 Vdc)			VBE(on)	Ð	1.8	Vdc
	DYNAMIC CHARACTERISTICS

	Current±Gain Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)			fT	30	Ð	MHz
	Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)			Cob	Ð	600	pF
	SWITCHING CHARACTERISTICS

	Rise Time			tr	Ð	0.35	μs
	(VCC = 80 Vdc, IC = 20 Adc, IB1 = 2.0 Adc, VBE(off) = 5.0 Vdc)
	Storage Time			ts	Ð	0.80	μs
	(VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc)
	Fall Time			tf	Ð	0.25	μs
	(VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc)

* Indicates JEDEC Registered Data.

(1)Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

(2)fT = |hfe| •ftest

		VCC
		+ 80 V
		RC
30 μs	RB	4.0 OHMS
+ 21.5 V	RB
+ 21.5 V	10 OHMS	μs)
0		μs)
0		(
± 18.5 V	1N3879	t, TIME
tr, tf ≤ 10 ns
DUTY CYCLE = 0.5%
	± 4.0 V

NOTE: For information of Figures 3 and 6 , RB and RC were NOTE: varied to obtain desired test conditions.

2.0

IC/IB = 10

1.0 TJ = 25°C

0.7

0.5td @ VBE(off) = 5.0 V

0.3

0.2

0.1

tr @ VCC = 80 V

0.07

0.05

0.03

0.02

0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50
			IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit	Figure 3. Turn±On Time

2	Motorola Bipolar Power Transistor Device Data

EFFECTIVE TRANSIENT THERMAL	RESISTANCE (NORMALIZED)
r(t),

												2N6274		2N6275	2N6277
1.0
0.7	D = 0.5
0.5	D = 0.5
0.5
0.3		0.2
0.2		0.1
		0.1
0.1		0.05						θ	(t) = r(t) θ	JC		P(pk)
								JC		JC
0.07		0.02						θJC = 0.7°C/W MAX
0.05								D CURVES APPLY FOR POWER
0.03				0.01				PULSE TRAIN SHOWN					t1
0.03				SINGLE PULSE				READ TIME AT t1					t1
0.02				SINGLE PULSE				READ TIME AT t1					t2
								TJ(pk) ± TC = P(pk) θJC(t)					t2
								TJ(pk) ± TC = P(pk) θJC(t)				DUTY CYCLE, D = t1/t2
												DUTY CYCLE, D = t1/t2
0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1000	2000
	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1000	2000
								t, TIME (ms)

Figure 4. Thermal Response

	100
	50
(AMP)	20	TJ = 200°C			dc	5.0 ms		1.0 ms		100	μ
(AMP)	10	TJ = 200°C			dc	5.0 ms		1.0 ms		100	s
CURRENT	10
	5.0
	2.0
	1.0
,COLLECTOR	1.0
	0.5		SECOND BREAKDOWN LIMITED
	0.2		BONDING WIRE LIMITED
	0.1		THERMALLY LIMITED
C	0.05		@ T = 25°C (SINGLE PULSE)					2N6274
I	0.05		C					2N6275
	0.02		CURVES APPLY BELOW					2N6275
	0.02		RATED V(BR)CEO					2N6277
	0.012.0		RATED V(BR)CEO					2N6277
	0.012.0	3.0	5.0	7.0	10	20	30	50	70	100	200
			VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 5. Active±Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the limitations imposed by second breakdown.

t, TIME ( μs)

5.0
5.0
3.0											IB	1	= I		B
				ts								1			2
2.0				ts							I	/I		=	10
											C	B
1.0											TJ = 25°C


0.7


0.5
0.5
0.3			tf @	VCC	= 80		V
0.3
0.2
0.2
0.1



0.07
0.07
0.050.5
0.050.5	0.7	1.0		2.0		3.0		5.0	7.0	10				20		30	50
				IC, COLLECTOR CURRENT (AMP)

C, CAPACITANCE (pF)

10,000
7000
7000										TJ =	25	°C
5000										TJ =	25	°C
5000

3000						C	ib
3000							ib
2000
2000
1000


700


500
500
300											C	ob
300												ob
200
200
100

	0.2	0.5	1.0	2.0	5.0			10	20		50		100
0.1	0.2	0.5	1.0	2.0	5.0			10	20		50		100

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn±Off Time

Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data

2N6274		2N6275			2N6277
	1000
	700								VCE = 4.0 V
	500								VCE = 10 V
GAIN	300		TJ = 150°C
	200		TJ = 150°C

CURRENT
	100			+ 25°C
	100
	70			± 55°C
, DC	70			± 55°C
, DC	50
FE
h	30
	30
	20
	10	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50
	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50
				IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

	2.8		T	J	=	25°C
	2.4		T	J	=	25°C
	2.4
(VOLTS)	2.0


	1.6


VOLTAGEV,
	1.2

					V	BE(sat) @ IC/IB			= 10
					V	BE(sat) @ IC/IB			= 10
	0.8
	0.8				V	BE(sat) @ IC/IB			= 4.0	V			V	CE(sat)
	0.4				V	BE(sat) @ IC/IB			= 4.0	V			V	CE(sat)
	0.4												@ IC/IB = 10
	0
	0	0.7			1.0		2.0	3.0		5.0	7.0	10	20		30	50
	0.5	0.7			1.0		2.0	3.0		5.0	7.0	10	20		30	50

IC, COLLECTOR CURRENT (AMP)

Figure 10. ªOnº Voltages

(VOLTS)	3.6	IC =			5.0 A		10 A				30 A
	4.0												TJ	=	25	°C
VOLTAGE	3.2	2.0	A
VOLTAGE

	2.8
	2.8
COLLECTOR±EMITTER,	2.4
	2.4
	2.0
	2.0
	1.6
	1.6
	1.2
	1.2
	0.8
	0.8
CE	0.4
	0.4

V	0
V	0	0.02		0.05		0.1		0.2	0.5	1.0		2.0	5.0				10
	0.01	0.02		0.05		0.1		0.2	0.5	1.0		2.0	5.0				10

IB, BASE CURRENT (AMPS)

Figure 9. Collector Saturation Region

(mV/°C)	+ 12
					hFE @ VCE + 4.0 V
	+ 10	*APPLIES FOR IC/IB <					4
COEFFICIENTS							4
	+ 8.0			± 55°C TO + 25°C
				± 55°C TO + 25°C
	+ 6.0			+ 25°C TO + 150°C
	+ 6.0
	+ 4.0
TEMPERATURE	+ 4.0
	+ 2.0		*θVC for VCE(sat)
			*θVC for VCE(sat)
	0		θVB for VBE
,
V
θ	± 2.0
	± 2.0	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50
	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50

IC, COLLECTOR CURRENT (AMP)

Figure 11. Temperature Coefficients

	103
(AMPS)	102	TJ = 150°C			VCE = 100 V
(AMPS)	102	TJ = 150°C
CURRENT	101		100°C
	101
					25°C
,COLLECTOR					25°C
	100		IC = ICES
			IC = ICES
	10±1
C	10±1
I		REVERSE	FORWARD
		REVERSE	FORWARD
	10± 2
	± 0.1	0	+ 0.1	+ 0.2	+ 0.3	+ 0.4
		VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 12. Collector Cut±Off Region

	102
			TJ = 150°C		VCE = 100 V
μA)	101
μA)
(
CURRENT	100		100°C
	100

, BASE	10±1
, BASE			25°C
B
I
	10± 2
	10±3	REVERSE	FORWARD
	10±3
	± 0.1	0	+ 0.1	+ 0.2	+ 0.3	+ 0.4
		VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 13. Base Cut±off Region

4	Motorola Bipolar Power Transistor Device Data

2N6274 2N6275 2N6277

PACKAGE DIMENSIONS

±T±

SEATING

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

PLANE

Y14.5M, 1982.

D 2 PL

2. CONTROLLING DIMENSION: INCH.

INCHES

MILLIMETERS

0.30 (0.012) M

DIM

MIN

MAX

MIN

MAX

1.530 REF

38.86 REF

±Y±

0.990

1.050

25.15

26.67

0.250

0.335

6.35

8.51

0.057

0.063

1.45

1.60

0.060

0.070

1.53

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

±Q±

0.760

0.830

19.31

21.08

0.25 (0.010) M

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 197A±05

TO±204AE

ISSUE J

Motorola Bipolar Power Transistor Device Data

2N6274 2N6275 2N6277

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊

2N6274/D

*2N6274/D*

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