Добавил:

student_tipo Опубликованный материал нарушает ваши авторские права? Сообщите нам.

Вуз:

Балаковский институт техники, технологии и управления

Предмет:

[НЕСОРТИРОВАННОЕ]

Файл:

2N6282RE

.PDF

Источник:

https://manualmachine.com

Скачиваний:

Добавлен:

06.01.2022

Размер:

219.47 Кб

Скачать

☆

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6282/D

Darlington Complementary

Silicon Power Transistors

. . . designed for general±purpose amplifier and low±frequency switching applications.

• High DC Current Gain @ IC = 10 Adc Ð

hFE = 2400 (Typ) Ð 2N6282, 2N6283, 2N6284
hFE = 4000 (Typ) Ð 2N6285, 2N6286, 2N6287
• Collector±Emitter Sustaining Voltage Ð
VCEO(sus) = 60 Vdc (Min) Ð 2N6282, 2N6285
VCEO(sus) = 80 Vdc (Min) Ð 2N6283, 2N6286
VCEO(sus) = 100 Vdc (Min) Ð 2N6284, 2N6287
• Monolithic Construction with Built±In Base±Emitter Shunt Resistors
*MAXIMUM RATINGS

						2N6282		2N6283		2N6284
Rating		Symbol				2N6285		2N6286		2N6287		Unit

Collector±Emitter Voltage		VCEO				60		80			100	Vdc
Collector±Base Voltage			VCB			60		80			100	Vdc
Emitter±Base Voltage			VEB				5.0					Vdc
Collector Current Ð Continuous			IC				20					Adc
Peak							40

Base Current			IB				0.5					Adc
Total Device Dissipation @ TC = 25_C			PD				160					Watts
Derate above 25_C							0.915					W/_C

Operating and Storage Junction		TJ,Tstg					± 65 to +200					_C
Temperature Range

*THERMAL CHARACTERISTICS

Characteristic				Symbol					Max			Unit

Thermal Resistance, Junction to Case					RθJC				1.09			_C/W
* Indicates JEDEC Registered Data.
	160
	160
(WATTS)	140
	140
	120
DISSIPATION	120
DISSIPATION	100
	100
	80
	80
POWER,	60
POWER,	40
D	40
D	20
P	20
	0
	0	25		50		75	100		125		150	175	200
	0	25		50		75	100		125		150	175	200

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

NPN

2N6282 thru

2N6284*

PNP

2N6285 thru 2N6287*

*Motorola Preferred Device

DARLINGTON

20 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS 60, 80, 100 VOLTS

160 WATTS

CASE 1±07 TO±204AA (TO±3)

Motorola, Inc. 1995

2N6282 thru 2N6284 2N6285 thru 2N6287

*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic		Symbol	Min	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage		VCEO(sus)			Vdc
(IC = 0.1 Adc, IB = 0)	2N6282, 2N6285		60	Ð
	2N6283, 2N6286		80	Ð
	2N6284, 2N6287		100	Ð

Collector Cutoff Current		ICEO			mAdc
(VCE = 30 Vdc, IB = 0)	2N6282, 2N6285		Ð	1.0
(VCE = 40 Vdc, IB = 0)	2N6283, 2N6286		Ð	1.0
(VCE = 50 Vdc, IB = 0)	2N6284, 2N6287		Ð	1.0
Collector Cutoff Current		ICEX			mAdc
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)			Ð	0.5
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)			Ð	5.0
Emitter Cutoff Current		IEBO	Ð	2.0	mAdc
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)

DC Current Gain		hFE			Ð
(IC = 10 Adc, VCE = 3.0 Vdc)			750	18,000
(IC = 20 Adc, VCE = 3.0 Vdc)			100	Ð
Collector±Emitter Saturation Voltage		VCE(sat)			Vdc
(IC = 10 Adc, IB = 40 mAdc)			Ð	2.0
(IC = 20 Adc, IB = 200 mAdc)			Ð	3.0
Base±Emitter On Voltage		VBE(on)	Ð	2.8	Vdc
(IC = 10 Adc, VCE = 3.0 Vdc)
Base±Emitter Saturation Voltage		VBE(sat)	Ð	4.0	Vdc
(IC = 20 Adc, IB = 200 mAdc)
DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small±Signal Short±Circuit		\|hfe\|	4.0	Ð	MHz
Forward Current Transfer Ratio
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance		Cob			pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)	2N6282,83,84		Ð	400
	2N6285,86,87		Ð	600

Small±Signal Current Gain		hfe	300	Ð	Ð
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
* Indicates JEDEC Registered Data.
(1) Pulse test: Pulse Width = 300 μs, Duty Cycle = 2%

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS	VCC
	± 30 V
D1 MUST BE FAST RECOVERY TYPE e.g.,
1N5825 USED ABOVE IB [ 100 mA		R
MSD6100 USED BELOW IB [ 100 mA		C
		SCOPE
TUT

V2		RB
APPROX
+ 8.0 V	51	D1	[ 8.0 k	[ 50
0	51	D1	[ 8.0 k	[ 50
0

+ 4.0 V

APPROX

25 μs

FOR td AND tr, D1 IS DISCONNECTED

± 12 V

tr, tf v 10 ns

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES

DUTY CYCLE = 1.0%

	10		ts					2N6282/84 (NPN)
	7.0		ts					2N6282/84 (NPN)
	5.0							2N6285/87 (PNP)
	5.0
	3.0
( μs)	2.0						tf
( μs)							tf		tr
TIME	1.0
TIME	0.7
t,	0.7
t,	0.5
	0.5
	0.3	VCC = 30 Vdc
	0.2	IC/IB = 250
	0.2	I	= I
		B1	B2					td @ VBE(off) = 0 V
	0.1	TJ = 25°C						td @ VBE(off) = 0 V
	0.1		0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20
	0.2		0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20

IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Times Test Circuit

Figure 3. Switching Times

2	Motorola Bipolar Power Transistor Device Data

													2N6282		thru	2N6284		2N6285			thru	2N6287
	RESISTANCE (NORMALIZED)	1.0
		0.7	D = 0.5
		0.5	D = 0.5
EFFECTIVE TRANSIENT		0.5
		0.3		0.2
		0.2		0.1
				0.1													P(pk)
		0.1		0.05									RθJC(t) = r(t) RθJC				P(pk)
		0.07		0.02									RθJC = 1.09°C/W MAX
		0.05		0.02									D CURVES APPLY FOR POWER
													D CURVES APPLY FOR POWER
r(t),	THERMAL												PULSE TRAIN SHOWN						t1
		0.03											PULSE TRAIN SHOWN						t1
		0.03			0.01								READ TIME AT t1						t2
					0.01								READ TIME AT t1						t2
		0.02		SINGLE PULSE									TJ(pk) ± TC = P(pk) RθJC(t)					DUTY CYCLE, D = t1/t2
				SINGLE PULSE														DUTY CYCLE, D = t1/t2
		0.01		0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000
		0.01		0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000
										t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

ACTIVE±REGION SAFE OPERATING AREA

	50
	20					0.1 ms
(AMP)	20		0.5 ms
	10		0.5 ms
	10		1.0 ms

CURRENT	5.0
	5.0		5.0 ms
			5.0 ms	dc
	2.0			dc
	2.0

, COLLECTOR	1.0	TJ = 200°C
	0.5
	0.2		SECOND BREAKDOWN LIMITED
C			BONDING WIRE LIMITED
I	0.1		BONDING WIRE LIMITED
	0.1		THERMAL LIMITATION @ TC = 25°C
	0.05		SINGLE PULSE
	0.05	2.0	5.0	10	20	50	100
		2.0	5.0	10	20	50	100
	VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

	50
	20	0.1 ms
(AMP)	20	0.5 ms
		0.5 ms
	10	1.0 ms

CURRENT
	5.0
		5.0 ms
	2.0		dc

, COLLECTOR	1.0	TJ = 200°C
	0.5
	0.2	SECOND BREAKDOWN LIMITED
C		BONDING WIRE LIMITED
I	0.1	BONDING WIRE LIMITED
	0.1	THERMAL LIMITATION @ TC = 25°C
	0.05	SINGLE PULSE
	0.05	5.0	10	20	50	100
	2.0	5.0	10	20	50	100
	VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

	50
			0.1 ms
(AMP)	20		0.5 ms
			0.5 ms
	10		1.0 ms

CURRENT
	5.0		5.0 ms
			5.0 ms
	2.0			dc

, COLLECTOR	1.0	TJ = 200°C
	0.5
	0.2		SECOND BREAKDOWN LIMITED
C			BONDING WIRE LIMITED
I	0.1		BONDING WIRE LIMITED
	0.1		THERMAL LIMITATION @ TC = 25°C
	0.05		SINGLE PULSE
	0.05	2.0	5.0	10	20	50	100
		2.0	5.0	10	20	50	100
	VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 5. 2N6282, 2N6285

Figure 6. 2N6283, 2N6286

Figure 7. 2N6284, 2N6287

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figures 5, 6 and 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by

second breakdown.

	10,000
GAIN	5000							TJ = 25°C
GAIN								VCE = 3.0 Vdc
CURRENT	2000							IC = 10 A
	1000
	500
, SMALL±SIGNAL	500
	200
	100
	50
FE			2N6282/84 (NPN)
h	20		2N6282/84 (NPN)
	20		2N6285/87 (PNP)
			2N6285/87 (PNP)
	10	2.0	5.0	10	20	50	100	200	500	1000
	1.0	2.0	5.0	10	20	50	100	200	500	1000

f, FREQUENCY (kHz)

Figure 8. Small±Signal Current Gain

	1000
	700								TJ = 25°C
	700
(PF)	500
(PF)
C, CAPACITANCE	300			Cib
C, CAPACITANCE	200						Cob
			2N6282/84 (NPN)
			2N6285/87 (PNP)
	100	0.2	0.5	1.0	2.0	5.0	10	20	50	100
	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100

VR, REVERSE VOLTAGE (VOLTS)

Figure 9. Capacitance

Motorola Bipolar Power Transistor Device Data

2N6282 thru 2N6284 2N6285 thru 2N6287

NPN

2N6282, 2N6283, 2N6284

	20,000		VCE =		3.0	V
	10,000		VCE =		3.0	V




GAIN		7000	TJ =		150	°C
		5000
		5000
CURRENTDC,		1000
		3000
		3000		25°C
		2000		25°C


FE		700	± 55°C
FE
h
		500
		500
		300
		300
		200
		200	0.3	0.5			0.7	1.0	2.0	3.0	5.0	7.0	10	20
		0.2	0.3	0.5			0.7	1.0	2.0	3.0	5.0	7.0	10	20

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

PNP

2N6285, 2N6286, 2N6287

30,000	VCE =		3.0	V
20,000	VCE =		3.0	V

10,000	TJ = 150°C
10,000
7000


5000
5000		25°C
3000		25°C


2000
2000

1000			± 55°C
1000
700


500
500
300
300	0.3	0.5			0.7	1.0	2.0	3.0	5.0	7.0	10	20
0.2	0.3	0.5			0.7	1.0	2.0	3.0	5.0	7.0	10	20

IC, COLLECTOR CURRENT (AMP)

Figure 10. DC Current Gain

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

3.0																										(VOLTS)	3.0
3.0																			TJ			=		25°C		VOLTAGE	3.0																						TJ				=		25°C
2.6																			TJ			=		25°C			2.6																						TJ				=		25°C

					IC	= 5.0		A			10 A							15	A													IC	= 5.0		A					10	A				15 A
																																IC	= 5.0		A					10	A
2.2																										-EMITTER	2.2
2.2																											2.2
1.8																											1.8

																										COLLECTOR,
1.4																											1.4

																										CE


1.0																										V	1.0
1.0	0.7		1.0			2.0			3.0		5.0	7.0		10				20			30				50		1.0		0.7		1.0				2.0				3.0	5.0		7.0	10				20				30					50
0.5	0.7		1.0			2.0			3.0		5.0	7.0		10				20			30				50		0.5		0.7		1.0				2.0				3.0	5.0		7.0	10				20				30					50
								IB, BASE CURRENT (mA)																														IB, BASE CURRENT (mA)
															Figure 11. Collector Saturation Region
3.0																											3.0

				TJ	= 25°		C																						TJ	= 25			°C
2.5				TJ	= 25°		C																			(VOLTS)	2.5		TJ	= 25			°C


2.0																											2.0

																										VOLTAGE


1.5	V	BE(sat)		@ IC/I			B	=		250																	1.5	V		BE(sat)			@	IC		/IB	=		250
	V	BE(sat)		@ IC/I			B	=		250
																										V,
																										V,

1.0	VBE			@ VCE =			3.0			V																	1.0		VBE				@ VCE			=	3.0		V
1.0												V	CE(sat)			@	IC/IB			=			250				1.0		VBE				@ VCE			=	3.0		V				V	CE(sat)		@		IC		/I		B		= 250
0.5												V	CE(sat)			@	IC/IB			=			250				0.5																V	CE(sat)		@		IC		/I		B		= 250

	0.3		0.5			0.7			1.0		2.0	3.0		5.0				7.0			10				20				0.3		0.5				0.7				1.0	2.0		3.0	5.0				7.0				10					20
0.2	0.3		0.5			0.7			1.0		2.0	3.0		5.0				7.0			10				20		0.2		0.3		0.5				0.7				1.0	2.0		3.0	5.0				7.0				10					20
						IC, COLLECTOR CURRENT (AMP)																														IC, COLLECTOR CURRENT (AMP)

Figure 12. ªOnº Voltages

4	Motorola Bipolar Power Transistor Device Data

2N6282 thru 2N6284 2N6285 thru 2N6287

θV, TEMPERATURE COEFFICIENTS (mV/°C)

NPN

2N6282, 2N6283, 2N6284

+ 5.0

hFE @

VCE

3.0

+ 4.0

*APPLIES

FOR I

C/IB

≤

+ 3.0

250

+ 2.0

25°C to 150°C

+ 1.0

± 55°C to + 25°C

± 1.0

*θVC for V

CE(sat)

± 2.0

°C to + 150°C

± 3.0

θVB for VBE

± 55°C to

25°C

± 4.0

± 5.0

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

0.2

IC, COLLECTOR CURRENT (AMP)

θV, TEMPERATURE COEFFICIENTS (mV/°C)

+5.0

+4.0

+3.0

+2.0

+1.0

±1.0

±2.0

±3.0

±4.0

±5.0

PNP

2N6285, 2N6286, 2N6287

*APPLIES FOR IC/IB ≤	hFE @ VCE + 3.0 V
*APPLIES FOR IC/IB ≤	250

	25°C to 150°C

	± 55°C to + 25°C

*θVC for VCE(sat)

25°C to + 150°C

θVB for VBE

± 55°C to + 25°C

0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20
			IC, COLLECTOR CURRENT (AMP)

Figure 13. Temperature Coefficients

	105
μA)	104	VCE = 30 V
μA)	104
(
CURRENT	103	TJ = 150°C
		TJ = 150°C
	102
,COLLECTOR	102		100°C
			100°C
	101	REVERSE				FORWARD
		REVERSE				FORWARD
	0
C	0
I	10
			25°C
	10±1		± 0.2	0	+ 0.2 + 0.4	+ 0.6 + 0.8	+ 1.0	+ 1.2	+ 1.4
	± 0.6 ± 0.4		± 0.2	0	+ 0.2 + 0.4	+ 0.6 + 0.8	+ 1.0	+ 1.2	+ 1.4
			VBE, BASE±EMITTER VOLTAGE (VOLTS)

	103
( μA)	102	VCE = 30 V
	102	TJ = 150°C
		TJ = 150°C
CURRENT	101
CURRENT	100		100°C
,COLLECTOR	100		100°C
	10±1	REVERSE					FORWARD
		REVERSE					FORWARD
	±2		°
C	±2		°
I	10		25 C
	10±3		+ 0.2	0	± 0.2	± 0.4	± 0.6 ± 0.8	± 1.0	± 1.2	± 1.4
	+ 0.6 + 0.4		+ 0.2	0	± 0.2	± 0.4	± 0.6 ± 0.8	± 1.0	± 1.2	± 1.4
			VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 14. Collector Cut±Off Region

NPN	COLLECTOR
2N6282
2N6283
2N6284
BASE
[ 8.0 k	[ 60

PNP	COLLECTOR
2N6285
2N6286
2N6287
BASE
[ 8.0 k	[ 60

EMITTER

Figure 15. Darlington Schematic

Motorola Bipolar Power Transistor Device Data

2N6282 thru 2N6284 2N6285 thru 2N6287

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

±T±

SEATING

2. CONTROLLING DIMENSION: INCH.

PLANE

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO±204AA OUTLINE SHALL APPLY.

D 2 PL

INCHES

MILLIMETERS

0.13 (0.005) M

DIM

MIN

MAX

MIN

MAX

1.550 REF

39.37 REF

±Y±

±±±

1.050

±±±

26.67

0.250

0.335

6.35

8.51

0.038

0.043

0.97

1.09

0.055

0.070

1.40

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

±Q±

±±±

0.830

±±±

21.08

0.13 (0.005) M

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊

2N6282/D

*2N6282/D*

Соседние файлы в папке Bipolar

#
06.01.2022282.05 Кб22N6050RE.PDF
#
06.01.2022214.28 Кб32N6055RE.PDF
#
06.01.2022152.86 Кб22N6107RE.PDF
#
06.01.2022185.12 Кб22N6251RE.PDF
#
06.01.2022173.45 Кб22N6274RE.PDF
#
06.01.2022219.47 Кб22N6282RE.PDF
#
06.01.2022159.1 Кб22N6338RE.PDF
#
06.01.2022175.42 Кб22N6379RE.PDF
#
06.01.2022168.19 Кб22N6387RE.PDF
#
06.01.2022182.35 Кб22N6436RE.PDF
#
06.01.2022154.9 Кб22N6487RE.PDF