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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BUL44/D

Designer's Data Sheet

SWITCHMODE

NPN Bipolar Power Transistor

For Switching Power Supply Applications

The BUL44/BUL44F have an applications specific state±of±the±art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer the following:

•Improved Efficiency Due to Low Base Drive Requirements:

ÐHigh and Flat DC Current Gain h FE

ÐFast Switching

ÐNo Coil Required in Base Circuit for Turn±Off (No Current Tail)

•Full Characterization at 125°C

•Tight Parametric Distributions are Consistent Lot±to±Lot

•Two Package Choices: Standard TO±220 or Isolated TO±220

•BUL44F, Case 221D, is UL Recognized to 3500 VRMS: File #E69369

MAXIMUM RATINGS

Rating		Symbol	BUL44		BUL44F	Unit

Collector±Emitter Sustaining Voltage		VCEO		400		Vdc
Collector±Emitter Breakdown Voltage		VCES		700		Vdc
Emitter±Base Voltage		VEBO		9.0		Vdc
Collector Current Ð Continuous		IC		2.0		Adc
Ð Peak(1)		ICM		5.0
Base Current Ð Continuous		IB		1.0		Adc
Ð Peak(1)		IBM		2.0
RMS Isolated Voltage(2)	Test No. 1 Per Fig. 22a	VISOL	Ð		4500	Volts
(for 1 sec, R.H. < 30%,	Test No. 2 Per Fig. 22b		Ð		3500
TC = 25°C)	Test No. 3 Per Fig. 22c		Ð		1500
Total Device Dissipation	(TC = 25°C)	PD	50		25	Watts
Derate above 25°C			0.4		0.2	W/°C

Operating and Storage Temperature		TJ, Tstg	± 65 to 150			°C
THERMAL CHARACTERISTICS

Rating	Symbol	BUL44		BUL44F	Unit

Thermal Resistance Ð Junction to Case	RqJC	2.5		5.0	°C/W
Ð Junction to Ambient	RqJA	62.5		62.5
Maximum Lead Temperature for Soldering	TL		260		°C
Purposes: 1/8″ from Case for 5 Seconds

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

BUL44* BUL44F*

*Motorola Preferred Device

POWER TRANSISTOR

2.0 AMPERES

700 VOLTS

40 and 100 WATTS

BUL44

CASE 221A±06

TO±220AB

BUL44F

CASE 221D±02

ISOLATED TO±220 TYPE

UL RECOGNIZED

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)	VCEO(sus)	400	Ð	Ð	Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)	ICEO	Ð	Ð	100	mAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)	ICES	Ð	Ð	100	mAdc
(TC = 125°C)		Ð	Ð	500
Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C)		Ð	Ð	100
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)	IEBO	Ð	Ð	100	mAdc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.					(continued)

(2) Proper strike and creepage distance must be provided.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola, Inc. 1995

BUL44 BUL44F

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Base±Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc)

VBE(sat)

0.85

1.1

Vdc

(IC = 1.0 Adc, IB = 0.2 Adc)

0.92

1.25

Collector±Emitter Saturation Voltage

VCE(sat)

Vdc

(IC = 0.4 Adc, IB = 40 mAdc)

(TC = 125°C)

0.20

0.5

(IC = 1.0 Adc, IB = 0.2 Adc)

0.20

0.5

(TC = 125°C)

0.25

0.6

0.25

0.6

DC Current Gain

hFE

(IC = 0.2 Adc, VCE = 5.0 Vdc)

(TC = 125°C)

(IC = 0.4 Adc, VCE = 1.0 Vdc)

(TC = 125°C)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

(TC = 125°C)

8.0

(IC = 10 mAdc, VCE = 5.0 Vdc)

7.0

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

COB

Input Capacitance (VEB = 8.0 V)

CIB

380

600

(IC = 0.4 Adc

1.0 μs

(T = 125°C)

2.5

2.7

IB1 = 40 mAdc

Dynamic Saturation Voltage:

3.0 μs

1.3

Determined 1.0 μs and

VCC = 300 V)

(TC = 125°C)

1.15

3.0 μs respectively after

VCE(dsat)

Vdc

3.2

rising IB1 reaches 90% of

(I = 1.0 Adc

1.0 μs

7.5

final I

(TC = 125 C)

IB1 = 0.2 Adc

1.25

VCC = 300 V)

3.0 μs

(TC = 125°C)

1.6

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 μs)

Turn±On Time

(IC = 0.4 Adc, IB1 = 40 mAdc

(TC = 125°C)

ton

100

IB2 = 0.2 Adc, VCC = 300 V)

Turn±Off Time

(IC = 0.4 Adc, IB1 = 40 mAdc

(TC = 125°C)

toff

1.5

2.5

μs

IB2 = 0.2 Adc, VCC = 300 V)

2.0

Turn±On Time

(IC = 1.0 Adc, IB1 = 0.2 Adc

(TC = 125°C)

ton

150

IB1 = 0.5 Adc, VCC = 300 V)

Turn±Off Time

(IC = 1.0 Adc, IB1 = 0.2 Adc

(TC = 125°C)

toff

1.75

2.5

μs

IB2 = 0.5 Adc, VCC = 300 V)

2.10

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 μH)

Fall Time

(IC = 0.4 Adc, IB1 = 40 mAdc

(TC = 125°C)

tfi

125

200

IB2 = 0.2 Adc)

120

Storage Time

(TC = 125°C)

tsi

0.7

1.25

μs

0.8

Crossover Time

(TC = 125°C)

110

200

110

Fall Time

(IC = 1.0 Adc, IB1 = 0.2 Adc

(TC = 125°C)

tfi

110

175

IB2 = 0.5 Adc)

120

Storage Time

(TC = 125°C)

tsi

1.7

2.75

μs

2.25

Crossover Time

(TC = 125°C)

180

300

210

Fall Time

(IC = 0.8 Adc, IB1 = 160 mAdc

(TC = 125°C)

tfi

170

IB2 = 160 mAdc)

180

Storage Time

(TC = 125°C)

tsi

2.6

3.8

μs

4.2

Crossover Time

(TC = 125°C)

190

300

350

2	Motorola Bipolar Power Transistor Device Data

BUL44 BUL44F

TYPICAL STATIC CHARACTERISTICS

	100
				VCE = 1 V
GAIN		TJ = 125°C
GAIN		TJ = 25°C
, DC CURRENT		TJ = 25°C
	10

FE
h
	1.0
	0.01	0.1	1.0	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain at 1 Volt

	2.0
	2.0	TJ =	25°	C
		TJ =	25°	C
(VOLTS)
(VOLTS)
, VOLTAGE	1.0
CE													1.5 A		2	A
V
											1	A
									0.4	A
	0				IC	=	0.2	A
	1.0	10							100					1000

IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

	1.2
	1.1
(VOLTS)	1.0
(VOLTS)	0.9
, VOLTAGE	0.8
, VOLTAGE	0.7	TJ = 25°C
BE
V	0.6
	0.6
	0.5	TJ = 125°C		IC/IB = 5
	0.4			IC/IB = 10
	0.4			10
	0.01	0.1	1.0	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 5. Base±Emitter Saturation Region

	100
				VCE = 5 V
GAIN		TJ = 125°C
GAIN		TJ = 25°C
, DC CURRENT	10	TJ = ± 20°C
	10

FE
h
	1.0
	0.01	0.1	1.0	10

IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain at 5 Volts

	10
(VOLTS)			IC/IB = 10
	1.0			IC/IB = 5
				IC/IB = 5
, VOLTAGE	0.1
CE	0.1
CE
V
				TJ = 25°C
				TJ = 125°C
	0.01
	0.01	0.1	1.0	10

IC, COLLECTOR CURRENT (AMPS)

Figure 4. Collector±Emitter Saturation Voltage

	1000
		CIB	TJ = 25°C
			f = 1 MHz
(pF)	100
CAPACITANCE	100
			COB
	10
C,	10
C,
	1.0
	1.0	10	100

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 6. Capacitance

Motorola Bipolar Power Transistor Device Data

BUL44 BUL44F

TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching)

	300
	250	IB(off) = IC/2
	250	VCC = 300 V
		PW = 20 μs
	200							IC/IB = 10
(ns)								IC/IB = 10
(ns)
TIME	150	IC/IB = 5
TIME		IC/IB = 5
t,
	100
	50							TJ = 25°C
	0							TJ = 125°C
	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Resistive Switching, ton

	2500
			IC/IB = 5				IB(off) = IC/2
	2000						VCC = 15 V
	2000						VZ = 300 V
							LC = 200 μH
t, TIME (ns)	1500
t, TIME (ns)	1000
	1000
	500
			TJ = 25°C
	0		TJ = 125°C	I	/I	= 10
	0				C B
	0.4	0.8	1.2	1.6		2.0	2.4

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Inductive Storage Time, tsi

	250
	200	tc
		tc
(ns)	150	tfi
(ns)
t, TIME
t, TIME	100
		IB(off) = IC/2
	50	VCC = 15 V
		VZ = 300 V				TJ = 25°C
	0	LC = 200 μH				TJ = 125°C
	0.4	0.8	1.2	1.6	2.0	2.4

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Inductive Switching,

tc and tfi IC/IB = 5

	6.0
	5.0							IB(off) = IC/2
	5.0	I /I	= 5					VCC = 300 V
		C B						PW = 20 μs
								PW = 20 μs
μs)	4.0
μs)								TJ = 25°C
(
TIME	3.0
TIME								TJ = 125°C
t,	2.0
	2.0
	1.0
	0	IC/IB = 10
	0
	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Resistive Switching, toff

	2.0					TJ = 25°C
						TJ = 25°C			IB(off) = IC/2
						TJ = 125°C			VCC = 15 V
(μs)	1.5								VZ = 300 V
	1.5								LC = 200 μH
									LC = 200 μH
TIME						IC = 1 A
, STORAGE	1.0
, STORAGE
si
t
			IC = 0.4 A
	0.5
	5.0	6.0	7.0	8.0	9.0	10	11	12	13	14	15

hFE, FORCED GAIN

Figure 10. Inductive Storage Time

200	IB(off) = IC/2
	IB(off) = IC/2
	VCC = 15 V
	VZ = 300 V
150	LC = 200 μH		tc
t, TIME (ns)	tfi
100	tfi
	TJ = 25°C
50	TJ = 125°C
0.4	0.8	1.2	1.6	2.0	2.4

IC, COLLECTOR CURRENT (AMPS)

Figure 12. Inductive Switching,

tc and tfi IC/IB = 10

4	Motorola Bipolar Power Transistor Device Data

BUL44 BUL44F

TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching)

	170								IB(off) = IC/2
	160								IB(off) = IC/2
	160								VCC = 15 V
									VCC = 15 V
	150								VZ = 300 V
(ns)	140								LC = 200 μH
	140					IC = 0.4 A

TIME	130
	130

, FALL	120
, FALL
fi	110
t

	100						IC = 1 A
	100
	90		TJ = 25°C
	90		TJ = 125°C
	80		TJ = 125°C
	5.0	6.0	7.0	8.0	9.0	10	11	12	13	14	15
					hFE, FORCED GAIN

Figure 13. Inductive Fall Time

	190
							IC = 1 A		IB(off) = IC/2
	170						IC = 1 A		VCC = 15 V
	170								VCC = 15 V
(ns)									VZ = 300 V
(ns)	150								LC = 200 μH
TIME	150								LC = 200 μH
TIME
,CROSSOVER	130			IC = 0.4 A
				IC = 0.4 A
	110
	90
c	90
t
	70		TJ = 25°C
			TJ = 125°C
	50	6.0	7.0	8.0	9.0	10	11	12	13	14	15
	5.0	6.0	7.0	8.0	9.0	10	11	12	13	14	15

hFE, FORCED GAIN

Figure 14. Inductive Crossover Time

			GUARANTEED SAFE OPERATING AREA INFORMATION
	10			10 μs			2.5
				10 μs	1 μs
(AMPS)			1 ms		1 μs	(AMPS)							TC ≤ 125°C
(AMPS)	DC (BUL44)	5 ms	1 ms			(AMPS)	2.0						TC ≤ 125°C
				50 μs			2.0						GAIN ≥	4
				50 μs	Extended								LC = 500		μ
CURRENT	1.0				Extended	CURRENT							LC = 500		H
CURRENT					SOA	CURRENT

	DC (BUL44F)						1.5
COLLECTOR,	DC (BUL44F)					COLLECTOR,	1.5
COLLECTOR,						COLLECTOR,	0.5
							1.0						±5 V
	0.1
C						C
I						I							±1.5 V
												0 V	±1.5 V
	0.01						0					0 V
	0.01		100		1000		0	100	200	300	400	500	600		700
	10		100		1000		0	100	200	300	400	500	600		700
	VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)							VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 15. Forward Bias Safe Operating Area

	1.0
	1.0

FACTOR	0.8					SECOND BREAK±
FACTOR
						DOWN DERATING
						DOWN DERATING
DERATING	0.6
DERATING


	0.4		THERMAL DERATING
POWER

	0.2



	0

		40	60	80	100	120	140	160
	20	40	60	80	100	120	140	160

TC, CASE TEMPERATURE (°C)

Figure 17. Forward Bias Power Derating

Figure 16. Reverse Bias Switching Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC±VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of figure 15 is based on TC = 25°C; TJ(PK) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on figure 15 may be found at any case temperature by using the appropriate curve on

figure 17. TJ(PK) may be calculated from the data in figure 20 and 21. At any case temperatures, thermal limitations will

reduce the power than can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn±off with the base±to±emitter junction reverse±biased. The safe level is specified as a reverse± biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

Motorola Bipolar Power Transistor Device Data

BUL44		BUL44F
	5
	VCE
	4
	3	dyn 1 μs
	2	dyn 3 μs
		dyn 3 μs
VOLTS	1
	0
	±1
	±1
	±2	90% IB
	±2
	±3	1 μs
	±4	3 μs
	IB
	±5
		TIME

Figure 18. Dynamic Saturation Voltage Measurements

10
9	IC					90% IC
8						tfi
8			tsi
7			tsi
7
6					tc		10% IC
5	VCLAMP	10% VCLAMP			tc		10% IC
5	VCLAMP	10% VCLAMP
4
3	IB	90% IB1
2
1
0
0	1	2	3	4	5	6	7	8
				TIME

Figure 19. Inductive Switching Measurements

+15 V
1	μF		100	Ω		MTP8P10		100 μF
	150 Ω		100	Ω
	150 Ω		3 W
	3 W		3 W
	3 W
	MPF930					MTP8P10	RB1		VCE
	MPF930					MUR105	RB1		IB1
	MPF930					MUR105		Iout	IB1
+10 V	MPF930							Iout	I
									B
							A
	50 Ω					MJE210	RB2
							RB2
									V(BR)CEO(sus)
COMMON					150 Ω	MTP12N10			V(BR)CEO(sus)
						MTP12N10			L = 10 mH
									L = 10 mH
	500	μ	F		3 W				RB2 = ∞
	500		F						VCC = 20 VOLTS
									VCC = 20 VOLTS
							1	μ	IC(pk) = 100 mA
							1	F

±Voff

IC PEAK

VCE PEAK

IB2
INDUCTIVE SWITCHING	RBSOA
L = 200 μH	L = 500 μH
RB2 = 0	RB2 = 0
VCC = 15 VOLTS	VCC = 15 VOLTS
RB1 SELECTED FOR	RB1 SELECTED
DESIRED IB1	FOR DESIRED IB1

Table 1. Inductive Load Switching Drive Circuit

6	Motorola Bipolar Power Transistor Device Data

BUL44 BUL44F

TYPICAL THERMAL RESPONSE

		1.0
			0.5
r(t) TRANSIENT THERMAL	RESISTANCE (NORMALIZED)		0.2
		0.01	0.1
			0.1
			0.05
		0.01			P(pk)	RθJC(t) = r(t) RθJC
						RθJC(t) = r(t) RθJC
			0.02			D CURVES APPLY FOR
					t1	POWER PULSE TRAIN
					t1	SHOWN READ TIME AT t1
			SINGLE PULSE			SHOWN READ TIME AT t1
			SINGLE PULSE		t2	TJ(pk) ± TC = P(pk) RθJC1(t)
					t2	TJ(pk) ± TC = P(pk) RθJC1(t)
					DUTY CYCLE, D = t1/t2
		0.01	0.1	1.0	10	100	1000
		0.01	0.1	1.0	10	100	1000

t, TIME (ms)

Figure 20. Typical Thermal Response (ZθJC(t)) for BUL44

	1.0
		0.5
		0.2
		0.1
	0.1				RθJC(t) = r(t) RθJC
THERMALTRANSIENTr(t)	(NORMALIZED)RESISTANCE	0.05		P(pk)	RθJC(t) = r(t) RθJC
				P(pk)	D CURVES APPLY FOR
					POWER PULSE TRAIN
				t1	POWER PULSE TRAIN
				t1	SHOWN READ TIME AT t1
				t2	TJ(pk) ± TC = P(pk) RθJC1(t)
				DUTY CYCLE, D = t1/t2
	0.01	SINGLE PULSE
	0.01
	0.01	0.1	1.0	10	100	1000

t, TIME (ms)

Figure 21. Typical Thermal Response (ZθJC(t)) for BUL44F

Motorola Bipolar Power Transistor Device Data

BUL44 BUL44F

TEST CONDITIONS FOR ISOLATION TESTS*

	MOUNTED		MOUNTED		MOUNTED
CLIP	FULLY ISOLATED	CLIP	FULLY ISOLATED	0.107″ MIN	FULLY ISOLATED	0.107″ MIN
	PACKAGE		PACKAGE		PACKAGE

LEADS	LEADS
HEATSINK	HEATSINK
0.110″ MIN

LEADS

HEATSINK

Figure 22a. Screw or Clip Mounting Position	Figure 22b. Clip Mounting Position	Figure 22c. Screw Mounting Position
for Isolation Test Number 1	for Isolation Test Number 2	for Isolation Test Number 3

* Measurement made between leads and heatsink with all leads shorted together.

MOUNTING INFORMATION**

4±40 SCREW

CLIP

PLAIN WASHER

HEATSINK
COMPRESSION WASHER
NUT	HEATSINK
NUT
Figure 23a. Screw±Mounted	Figure 23b. Clip±Mounted

Figure 23. Typical Mounting Techniques

for Isolated Package

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4±40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4±40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.

** For more information about mounting power semiconductors see Application Note AN1040.

8	Motorola Bipolar Power Transistor Device Data

BUL44 BUL44F

PACKAGE DIMENSIONS

				±T±	PLANESEATING
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z

		STYLE 1:
L	R	PIN 1.
L	R	2.
		2.
V	J	3.
V	J	4.
		4.
G
	D
	N

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

		INCHES		MILLIMETERS
	DIM	MIN	MAX	MIN	MAX
	A	0.570	0.620	14.48	15.75
	B	0.380	0.405	9.66	10.28
	C	0.160	0.190	4.07	4.82
	D	0.025	0.035	0.64	0.88
	F	0.142	0.147	3.61	3.73
	G	0.095	0.105	2.42	2.66
	H	0.110	0.155	2.80	3.93
	J	0.018	0.025	0.46	0.64
	K	0.500	0.562	12.70	14.27
BASE	L	0.045	0.060	1.15	1.52
COLLECTOR	N	0.190	0.210	4.83	5.33
EMITTER	Q	0.100	0.120	2.54	3.04
COLLECTOR	R	0.080	0.110	2.04	2.79
	S	0.045	0.055	1.15	1.39
	T	0.235	0.255	5.97	6.47
	U	0.000	0.050	0.00	1.27
	V	0.045	±±±	1.15	±±±
	Z	±±±	0.080	±±±	2.04

BUL44

CASE 221A±06

TO±220AB

ISSUE Y

					±T±	SEATING
						PLANE
±B±					C			NOTES:
F					S			1. DIMENSIONING AND TOLERANCING PER ANSI
					S				Y14.5M, 1982.
Q								2.	CONTROLLING DIMENSION: INCH.
Q					U
					U					INCHES		MILLIMETERS
										INCHES		MILLIMETERS
A									DIM	MIN	MAX	MIN	MAX
									A	0.621	0.629	15.78	15.97
1	2	3							B	0.394	0.402	10.01	10.21
1	2	3							C	0.181	0.189	4.60	4.80
H									C	0.181	0.189	4.60	4.80
H		±Y±				STYLE 2:			D	0.026	0.034	0.67	0.86
K		±Y±				PIN 1.	BASE		F	0.121	0.129	3.08	3.27
K						2.	COLLECTOR		G	0.100 BSC		2.54 BSC
						2.	COLLECTOR		G	0.100 BSC		2.54 BSC
						3.	EMITTER		H	0.123	0.129	3.13	3.27
									J	0.018	0.025	0.46	0.64
		G			J				K	0.500	0.562	12.70	14.27
		G			J				L	0.045	0.060	1.14	1.52
		N				R			N	0.200 BSC		5.08 BSC
		L				R			Q	0.126	0.134	3.21	3.40
									Q	0.126	0.134	3.21	3.40
									R	0.107	0.111	2.72	2.81
		D 3 PL							R	0.107	0.111	2.72	2.81
		D 3 PL							S	0.096	0.104	2.44	2.64
		0.25 (0.010) M	B	M	Y				U	0.259	0.267	6.58	6.78
		0.25 (0.010) M	B	M	Y

BUL44F

CASE 221D±02

(ISOLATED TO±220 TYPE)

ISSUE D

Motorola Bipolar Power Transistor Device Data

BUL44 BUL44F

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊ BUL44/D

*BUL44/D*

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