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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC6071/D

Advance Information

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

Sensitive Gate Triggering (A and B versions) Uniquely Compatible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions

Gate Triggering 4 Mode Ð MAC6071A,B, MAC6073A,B, MAC6075A,B

Blocking Voltages to 600 Volts

All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability

Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability

MAC6071A,B* MAC6073A,B* MAC6075A,B*

*Motorola preferred devices

TRIACs

4 AMPERES RMS

200 thru 600 VOLTS

MT1

MT2

G

 

 

MT2

 

 

 

 

G

CASE 77-08

 

 

 

 

(TO-225AA)

 

 

 

 

MT2 MT1

 

 

 

 

 

STYLE 5

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rating

Symbol

Value

 

Unit

 

 

 

 

 

 

 

Peak Repetitive Off-State Voltage(1)

 

VDRM

 

 

Volts

(Gate Open, TJ = 25 to 110°C)

MAC6071A,B

 

 

200

 

 

 

MAC6073A,B

 

 

400

 

 

 

MAC6075A,B

 

 

600

 

 

 

 

 

 

 

 

 

On-State Current RMS (TC = 85°C)

 

IT(RMS)

4

 

Amps

Peak Surge Current (One Full cycle, 60 Hz, TJ = ±40 to +110°C)

ITSM

30

 

Amps

Circuit Fusing Considerations (t = 8.3 ms)

I2t

3.7

 

A2s

Peak Gate Power

 

PGM

10

 

Watts

Average Gate Power

 

PG(AV)

0.5

 

Watt

Peak Gate Voltage

 

VGM

5

 

Volts

Operating Junction Temperature Range

TJ

±40 to +110

 

°C

Storage Temperature Range

 

Tstg

±40 to +150

 

°C

Mounting Torque (6-32 Screw)(2)

 

Ð

 

8

 

in. lb.

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

2.Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower

case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common.

For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds. Consult factory for lead bending options.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1996

MAC6071A,B

MAC6073A,B MAC6075A,B

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

 

Symbol

 

Max

 

 

Unit

 

 

 

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

 

 

RθJC

3.5

 

 

°C/W

Thermal Resistance, Junction to Ambient

 

 

RθJA

75

 

 

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

 

Min

 

Typ

Max

 

Unit

 

 

 

 

 

 

 

 

 

 

 

Peak Blocking Current

(TJ = 25°C)

IDRM

 

Ð

 

Ð

10

 

μA

(VD = Rated VDRM, gate open)

 

 

 

 

 

 

 

(TJ = 110°C)

 

 

 

Ð

 

Ð

2.0

 

mA

On-State Voltage (Either Direction)

 

VTM

 

Ð

 

1.3

2.0

 

Volts

(ITM = 6 A Peak)

 

 

 

 

 

 

 

 

 

 

 

 

Peak Gate Trigger Voltage (Continuous dc)

VGT

 

 

 

 

 

 

 

Volts

(TJ = ±40°C) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

 

 

 

 

 

 

 

 

 

 

MT2(+), G(+); MT2(±), G(±)

 

 

 

 

0.5

 

0.8

1.9

 

 

MT2(+), G(±); MT2(±), G(+)

 

 

 

 

0.5

 

0.8

1.9

 

 

(TJ = 110°C)

 

 

 

 

 

 

 

 

 

 

 

 

MT2(+), G(+); MT2(±), G(±)

 

 

 

 

0.2

 

0.4

0.9

 

 

MT2(+), G(±); MT2(±), G(+)

 

 

 

 

0.2

 

0.4

0.9

 

 

(TJ = 25°C)

 

 

 

 

 

 

 

 

 

 

 

 

MT2(+), G(+); MT2(±), G(±)

 

 

 

 

0.4

 

0.7

1.4

 

 

MT2(+), G(±); MT2(±), G(+)

 

 

 

 

0.4

 

0.7

1.4

 

 

 

 

 

 

 

 

 

 

 

 

 

Holding Current (Either Direction)

 

IH

 

 

 

 

 

 

 

mA

(TJ = ±40°C) (Main Terminal Voltage = 12 Vdc, Gate Open)

 

 

 

 

 

 

 

 

 

 

(Initiating Current = 150 mA)

 

 

 

 

0.4

 

2.0

10

 

 

(TJ = 25°C)

 

 

 

 

 

0.2

 

1.0

5.0

 

 

Latching Current

(VD = 6 V)

TJ = 25°C

IL

 

Ð

 

2.0

10

 

mA

MT2(+), G(+)

(IG = 8 mA)

 

 

 

 

 

 

MT2(+), G(±)

(IG = 8 mA)

 

 

 

 

Ð

 

5.0

20

 

 

MT2(±), G(±)

(IG = 8 mA)

 

 

 

 

Ð

 

1.0

10

 

 

MT2(±), G(+)

(IG = 15 mA)

 

 

 

 

Ð

 

2.0

10

 

 

Gate Trigger Current (Continuous dc)

 

IGT

 

 

 

 

 

 

 

mA

(VD = 12 Vdc, RL = 100 Ohms)

 

 

 

 

 

 

 

 

 

 

 

MAC6071A, MAC6073A, MAC6075A

 

 

 

 

 

 

 

 

 

 

MT2(+), G(+)

 

TJ = 25°C

 

 

 

0.4

 

2.0

5.0

 

 

MT2(+), G(±)

 

 

 

 

 

0.4

 

3.0

5.0

 

 

MT2(±), G(±)

 

 

 

 

 

0.4

 

3.0

5.0

 

 

MT2(±), G(+)

 

 

 

 

 

0.8

 

4.5

10

 

 

MT2(+), G(+)

 

TJ = ±40°C

 

 

 

0.8

 

3.5

10

 

 

MT2(+), G(±)

 

 

 

 

 

0.8

 

4.5

10

 

 

MT2(±), G(±)

 

 

 

 

 

0.8

 

5.0

10

 

 

MT2(±), G(+)

 

 

 

 

 

1.6

 

10

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

Motorola Thyristor Device Data

 

 

MAC6071A,B

MAC6073A,B

MAC6075A,B

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

Min

Typ

 

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

Gate Trigger Current (Continuous dc)

 

 

IGT

 

 

 

 

mA

 

(VD = 12 Vdc, RL = 100 Ohms)

 

 

 

 

 

 

 

 

 

MAC6071B, MAC6073B, MAC6075B

 

 

 

 

 

 

 

 

MT2(+), G(+)

TJ = 25°C

 

 

0.4

1.5

 

3.0

 

 

MT2(+), G(±)

 

 

 

0.4

2.5

 

3.0

 

 

MT2(±), G(±)

 

 

 

0.4

2.5

 

3.0

 

 

MT2(±), G(+)

 

 

 

0.8

3.5

 

5.0

 

 

MT2(+), G(+)

TJ = ±40°C

 

 

0.8

3.0

 

8.0

 

 

MT2(+), G(±)

 

 

 

0.8

4.0

 

8.0

 

 

MT2(±), G(±)

 

 

 

0.8

4.5

 

8.0

 

 

MT2(±), G(+)

 

 

 

1.6

7.5

 

15

 

 

 

 

 

 

 

 

 

 

 

 

Turn-On Time (Either Direction)

 

 

tgt

Ð

1.5

 

Ð

μs

 

(ITM = 14 Adc, IGT = 100 mAdc)

 

 

 

 

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

Min

Typ

 

Max

Unit

 

 

 

 

 

 

 

 

 

 

Critical Rate of Rise of Off±State Voltage

 

(di/dt)c

 

 

 

 

A/ms

 

(VD = 200 V, ITM = 1.4 A, Commutating dv/dt = 0.5 Vm/sec,

 

 

Ð

2.2

 

Ð

 

 

Gate Open, TJ = 110°C, f = 250 Hz, Snubber: CS = 0.1 mF, RS = 56 W,

 

 

 

 

 

 

 

 

see Figure 16)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Critical Rate of Rise of Off±State Voltage

 

dv/dt

Ð

7.0

 

Ð

V/ms

 

(VD = Rate VDRM, Exponential Waveform, RGK = OPEN, TJ = 110°C)

 

 

 

 

 

 

 

 

SAMPLE APPLICATION:

TTL-SENSITIVE GATE 4 AMPERE TRIAC

TRIGGERS IN MODES II AND III

0 V

14

 

 

MC7400

 

 

 

 

LOAD

 

4

 

 

510

2N6071A

 

7

115 VAC

±VEE

Ω

 

VEE = 5.0 V

 

60 Hz

 

+

 

 

QUADRANT DEFINITIONS

 

 

MT2(+)

 

QUADRANT II

 

QUADRANT I

 

 

MT2(+), G(±)

 

MT2(+), G(+)

G(±)

 

 

 

G(+)

 

 

 

QUADRANT III

 

QUADRANT IV

 

MT2(±), G(±)

 

MT2(±), G(+)

 

 

 

 

 

 

 

MT2(±)

NOTES: For detail Digital Interfacing and Silicon Bilateral Switch (SBS) trigger application information, see the Motorola's Thyristor Data Book (DL137/D, Revision 6).

1.Interfacing Digital Circuits to Thyristor Controlled AC Loads, page 1.6±25.

2.Silicon Bilateral Switch (SBS) Applications, page 1.6±41.

Motorola Thyristor Device Data

3

MAC6071A,B

MAC6073A,B

MAC6075A,B

 

 

TEMPERATURE (°C)

110

 

 

 

 

 

 

 

 

DISSIPATION (WATTS)

7.0

105

 

 

 

 

 

 

 

 

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

T = 30°

 

 

5.0

100

 

 

 

 

 

°

 

 

 

 

 

 

 

60

 

4.0

 

 

 

 

 

 

90°

CASE

 

 

 

 

 

 

 

(AV)

 

 

 

 

 

 

 

 

 

120°

 

95

 

 

 

 

 

 

 

P

3.0

MAXIMUM ALLOWABLE

 

 

 

 

 

 

 

 

AVERAGE POWER

 

 

α

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

90

α

 

 

 

 

 

 

180°

1.0

 

α = CONDUCTION ANGLE

 

 

 

 

 

 

 

 

 

 

DC

 

85

 

 

 

 

 

 

 

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

 

,

 

 

 

 

 

 

 

 

 

 

 

C

 

IT(RMS), RMS ON±STATE CURRENT (AMPS)

 

 

 

 

T

 

 

 

 

 

 

 

 

α

 

 

 

DC

 

 

 

 

 

 

180°

 

 

 

 

 

 

 

 

 

 

 

 

α

 

 

 

120°

 

 

 

α = CONDUCTION ANGLE

 

 

 

90°

 

 

 

 

 

 

 

 

60°

 

 

 

 

 

 

 

T = 30°

 

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

 

 

IT(RMS), RMS ON±STATE CURRENT (AMPS)

 

 

Figure 1. RMS Current Derating

Figure 2. Maximum On±State Power

 

Dissipation

ON±STATE CURRENT(AMPS)

100

 

 

 

 

 

 

 

 

 

TRANSIENTTHERMALRESISTANCE

10

 

TYPICAL @ TJ = 25°C

 

 

 

 

 

 

 

10

 

 

 

 

 

MAXIMUM @ TJ = 110°C

 

 

1.0

 

 

 

 

 

 

 

 

 

1.0

0.1

 

MAXIMUM @ TJ = 25°C

 

 

 

 

 

 

INSTANTANEOUS

 

 

 

 

 

 

 

 

 

°C/W

 

 

 

 

 

 

 

 

 

 

 

 

0.01

 

 

 

 

 

 

 

 

 

JC(t)

0.1

,

 

 

 

 

 

 

 

 

 

q

T

 

 

 

 

 

 

 

 

 

I

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Z

 

 

 

 

 

 

VT, INSTANTANEOUS ON±STATE VOLTAGE (VOLTS)

 

 

 

 

 

 

 

MAXIMUM

 

0.1

1.0

10

100

1S103

1S104

t, TIME (ms)

Figure 3. On±State Characteristics

Figure 4. Transient Thermal Response

 

2.5

 

 

 

 

 

 

 

 

(mA)

2.0

 

 

 

 

 

 

 

(mA)

 

 

 

 

 

 

 

 

CURRENT

1.5

 

 

MT2 NEGATIVE

 

 

 

CURRENT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, HOLDING

1.0

 

 

 

 

 

 

 

,LATCHING

 

 

MT2 POSITIVE

 

 

 

 

H

0.5

 

 

 

 

 

 

 

L

I

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

0

±20

0

20

40

60

80

100

110

 

±40

 

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

 

 

9.0

 

 

 

 

 

 

 

 

 

8.0

 

 

 

 

 

 

 

 

 

7.0

 

 

 

Q2 IG = 8 mA

 

 

 

 

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

 

 

4.0

 

Q4 IG = 15 mA

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

Q1 IG = 8 mA

 

 

 

 

 

 

 

1.0

Q3 IG = 8 mA

 

 

 

 

 

 

 

0

 

±20

0

20

40

60

80

100

110

±40

 

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

 

 

Figure 5. Typical Holding Current versus

Figure 6. Typical Latching Current versus

Junction Temperature

Junction Temperature (MAC6075B)

4

Motorola Thyristor Device Data

 

 

 

 

 

 

 

 

 

 

 

MAC6071A,B

MAC6073A,B

MAC6075A,B

 

8.0

 

 

 

 

 

 

 

 

 

0.9

 

 

 

 

 

 

 

 

GATE TRIGGER CURRENT (mA)

 

 

 

 

 

 

 

 

 

TRIGGER VOLTAGE (VOLTS)

0.8

 

 

 

 

 

 

 

 

6.0

 

Q4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4.0

Q3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Q2

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

Q3

 

 

 

 

 

 

 

 

 

 

 

 

 

Q1

Q2

 

Q4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Q1

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

GATE,

 

 

 

 

 

 

 

 

 

GT

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

GT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

0

±20

0

20

40

60

80

100

110

 

0.3

±20

0

20

40

60

80

100

110

 

±40

 

±40

 

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

 

 

 

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

 

Figure 7. Typical Gate Trigger Current versus

Figure 8. Typical Gate Trigger Voltage versus

Junction Temperature

Junction Temperature

STATIC dv/dt (V/uS)

24

TJ = 110°C

VPK = 400 V

22

20

500 V

18

600 V

16

100

200

300

400

500

600

700

800

900

1000

 

 

RGK, GATE±MT1 RESISTANCE (OHMS)

 

 

STATIC dv/dt (V/uS)

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RG

±MT1 = 510 W

 

 

 

 

 

 

 

 

 

 

 

25

 

 

 

 

 

TJ =

100°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

110

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

120

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

450

500

550

 

600

400

 

VPK, PEAK VOLTAGE (VOLTS)

STATIC dv/dt (V/uS)

 

 

Figure 9. Typical Exponential Static dv/dt

 

 

 

 

 

Figure 10. Typical Exponential Static dv/dt

 

 

 

 

versus Gate±MT1 Resistance, MT2(+)

 

 

 

 

 

 

 

versus Peak Voltage, MT2(+)

 

 

 

30

 

 

 

 

 

 

 

 

 

 

 

 

 

11

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RG

±MT1 = 510 W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

T

J = 110°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VPK =

400 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

=

400 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25

 

 

 

 

 

 

 

 

 

 

 

 

 

10.5

 

 

 

 

 

 

 

 

 

PK

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(V/uS)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

500 V

 

 

 

 

 

 

 

 

dv/dt

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

STATIC

 

 

 

 

 

 

 

 

 

500 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

15

 

 

 

600 V

 

 

 

 

 

 

 

 

9.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

600 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

9.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

105

 

110

115

 

120

 

 

200

300

400

500

600

700

800

900

1000

100

 

 

 

100

 

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

 

 

 

 

 

 

RGK, GATE±MT1 RESISTANCE (OHMS)

 

 

 

 

 

Figure 11. Typical Exponential Static dv/dt

 

 

 

 

 

Figure 12. Typical Exponential Static dv/dt

 

 

 

 

versus Junction Temperature, MT2(+)

 

 

 

 

 

 

versus Gate±MT1 Resistance, MT2(±)

 

 

Motorola Thyristor Device Data

5

MAC6071A,B MAC6073A,B MAC6075A,B

 

16

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RG

±MT1 = 510 W

 

 

 

14

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(V/uS)

 

 

 

 

 

TJ =

100°C

 

 

 

 

 

 

 

 

 

 

 

 

 

12

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

dv/dt

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

STATIC

10

 

 

 

 

 

110

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

8.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

120

°C

 

 

 

 

 

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

450

500

550

 

600

 

400

 

VPK, PEAK VOLTAGE (VOLTS)

STATIC dv/dt (V/uS)

16

RG±MT1 = 510 W

14

12

VPK = 400 V

500 V

10

600 V

8.0

6.0

105

110

115

120

100

TJ, JUNCTION TEMPERATURE (°C)

Figure 13. Typical Exponential Static dv/dt versus Peak Voltage, MT2(±)

Figure 14. Typical Exponential Static dv/dt versus Junction Temperature, MT2(±)

 

 

1.2

 

 

 

 

 

 

 

 

 

RATE OF RISE OF

 

 

 

TJ = 110°C

 

 

100°C

 

90°C

 

VOLTAGE (V/us)

1.1

 

 

 

 

 

 

 

 

 

 

 

 

GATE OPEN

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

0.9

 

 

 

 

 

 

 

 

 

(dv/dt)c, CRITICAL

COMMUTATING

 

 

 

 

 

 

 

 

 

0.8

 

 

tw

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

0.7

 

 

 

f + 2tw

 

6f ITM

 

 

 

 

 

 

200 V

(di dt)c +

 

 

 

 

 

 

 

 

1000

 

 

 

 

 

0.6

 

 

 

 

 

 

 

 

 

 

2.6

2.8

3.0

3.2

3.4

3.6

3.8

4.0

4.2

 

 

2.4

(di/dt)c, CRITICAL RATE OF CHANGE COMMUTATING CURRENT (A/ms)

Figure 15. Critical Rate of Rise of

Commutating Voltage

200 VRMS

 

ADJUST FOR

 

ITM, 60 Hz VAC

 

 

TRIGGER

CHARGE

CHARGE

CONTROL

 

 

 

5 mF NON±POLAR

CL

TRIGGER CONTROL

80 mHY

 

 

 

1N4007

 

LL

 

 

 

 

 

 

 

 

 

MEASURE

 

RS

56 W

 

 

I

 

 

 

 

2

CS

0.1 mF

200 V

 

 

ADJUST FOR

 

 

 

 

 

 

 

 

 

 

dv/dt(c)

 

1N914

51

1

 

 

 

 

G

 

 

 

 

NOTE: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage

6

Motorola Thyristor Device Data

MAC6071A,B MAC6073A,B MAC6075A,B

PACKAGE DIMENSIONS

±B±

F

 

U

 

C

Q

 

 

M

 

 

±A±

 

 

 

1

2

3

 

H

 

K

 

 

 

 

V

 

J

G

 

 

R

S

0.25 (0.010) M

A

M B M

D 2 PL

 

 

 

0.25 (0.010) M A M

B

M

STYLE 5:

PIN 1. MT 1

2.MT 2

3.GATE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.425

0.435

10.80

11.04

B

0.295

0.305

7.50

7.74

C

0.095

0.105

2.42

2.66

D

0.020

0.026

0.51

0.66

F

0.115

0.130

2.93

3.30

G

0.094 BSC

2.39 BSC

H

0.050

0.095

1.27

2.41

J

0.015

0.025

0.39

0.63

K

0.575

0.655

14.61

16.63

M

5

TYP

5

TYP

Q

0.148

0.158

3.76

4.01

R

0.045

0.055

1.15

1.39

S

0.025

0.035

0.64

0.88

U

0.145

0.155

3.69

3.93

V

0.040

±±±

1.02

±±±

CASE 77±08 (TO±225AA)

Motorola Thyristor Device Data

7

MAC6071A,B MAC6073A,B MAC6075A,B

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

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MAC6071/D

*MAC6071/D*

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