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MAC321

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC321/D

Triacs	MAC321
Silicon Bidirectional Thyristors	Series
. . . designed for full-wave ac control applications primarily in industrial environments
needing noise immunity.
• Guaranteed High Commutation Voltage
dv/dt Ð 500 V/ μs Min @ TC = 25°C	TRIACs
• High Blocking Voltage Ð V DRM to 800 V	20 AMPERES RMS
• Photo Glass Passivated Junction for Improved Power Cycling Capability and	200 thru 800 VOLTS
Reliability


	MT2		MT1


		G		CASE 221A-04
		G


				(TO-220AB)
				STYLE 4
MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)
MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)
Rating			Symbol	Value	Unit

Peak Repetitive Off-State Voltage(1) (T = ±40 to +125°C,			V		Volts
J			DRM
1/2 Sine Wave 50 to 60 Hz, Open Gate)
MAC321-4				200
MAC321-6				400
MAC321-8				600
MAC321-10				800

Peak Gate Voltage			VGM	10	Volts
On-State Current RMS (TC = +75°C			IT(RMS)	20	Amp
Full Cycle Sine Wave 50 to 60 Hz)

Peak Surge Current (One Full Cycle, 60 Hz, TC = +75°C			ITSM	150	Amp
preceded and followed by Rated Current)

Circuit Fusing Considerations (t = 8.3 ms)			I2t	93	A2s
Peak Gate Power (TC = +75°C, Pulse Width = 2.0 μs)			PGM	20	Watts
Average Gate Power (TC = +75°C, t = 8.3 ms)			PG(AV)	0.5	Watt
Peak Gate Current			IGM	2.0	Amp
Operating Junction Temperature Range			TJ	±40 to +125	°C
Storage Temperature Range			Tstg	±40 to +150	°C
THERMAL CHARACTERISTICS

Characteristic			Symbol	Max	Unit

Thermal Resistance, Junction to Case			RθJC	1.8	°C/W

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Motorola, Inc. 1995

MAC321 Series

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic	Symbol	Min	Typ	Max	Unit

Peak Blocking Current	IDRM
(VD = Rated VDRM, Gate Open)
TJ = 25°C		Ð	Ð	10	μA
TJ = +125°C		Ð	Ð	2.0	mA
Peak On-State Voltage (Either Direction)	VTM	Ð	1.4	1.7	Volts
(ITM = 28 A Peak; Pulse Width p 2.0 ms, Duty Cycle p 2.0%)
Gate Trigger Current (Continuous dc)	IGT				mA
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)		Ð	Ð	100
MT2(+), G(±)		Ð	Ð	100
MT2(±), G(±)		Ð	Ð	100

Gate Trigger Voltage (Continuous dc)	VGT				Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)		Ð	Ð	2.0
MT2(+), G(±)		Ð	Ð	2.0
MT2(±), G(±)		Ð	Ð	2.0
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C)
MT2(+), G(+); MT2(±), G(±); MT2(+), G(±)		0.2	Ð	Ð

Holding Current (Either Direction)	IH	Ð	Ð	100	mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)

Turn-On Time	tgt	Ð	1.5	Ð	μs
(VD = Rated VDRM, ITM = 28 A, IGT = 120 mA,
Rise Time = 0.1 μs, Pulse Width = 2.0 μs)

Critical Rate of Rise of Off-State Voltage	dv/dt(s)				V/μs
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open)
TJ = 25°C		500	Ð	Ð
TJ = +125°C		200	Ð	Ð

									TYPICAL CHARACTERISTICS
(°C)	130
CASE TEMPERATURE	130												40
	120											, AVERAGE POWER (WATT)	35				α
	120							α = 30°					35
								α = 30°							α							90°180° dc
	110								60°90°				30		α							90°180° dc
	100												25		α = CONDUCTION
	100												25		ANGLE
															ANGLE
	90												20
	80			α					180°				15									60°
									180°													60°
ALLOWABLE	70		α							dc		D(AV)	10								α = 30°
ALLOWABLE												D(AV)
MAXIMUM	60	α = CONDUCTION										P	5
	50		ANGLE										0
		2	4	6	8	10	12	14	16	18	20
,														2	4	6	8	10	12	14	16	18	20
C	0												0	2	4	6	8	10	12	14	16	18	20
T			IT(RMS), RMS ON-STATE CURRENT (AMP)												IT(RMS), RMS ON-STATE CURRENT (AMP)
			IT(RMS), RMS ON-STATE CURRENT (AMP)												IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating

Figure 2. On-State Power Dissipation

2	Motorola Thyristor Device Data

VGTM , GATE TRIGGER VOLTAGE (NORMALIZED)

I GTM , GATE TRIGGER CURRENT (NORMALIZED)

I H , HOLDING CURRENT (NORMALIZED)

OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

0.7

0.5

0.3
±60	±40	±20	0	20	40	60	80	100	120	140

TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Voltage

OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

0.7

0.5

0.3

±60

±40

±20

100

120

140

TJ, JUNCTION TEMPERATURE(°C)

Figure 4. Typical Gate Trigger Current

GATE OPEN

APPLIES TO EITHER DIRECTION

0.7

0.5

0.3
±60	±40	±20	0	20	40	60	80	100	120	140

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Typical Holding Current

MAC321 Series

	100
	70


	50

					TJ =		25°C
					TJ =		25°C
	30								125°C


(AMP)	20
	20
	10

CURRENT

	7


FORWARD
	5


INSTANTANEOUS	3


	1
,	2


TM	0.7
TM	0.7
i	0.5



	0.3


	0.2
	0.2
	0.1
	0.1
	0.4	0.8		1.2		1.6		2	2.4		2.8		3.2	3.6		4	4.4
			vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
		Figure 5. Maximum On-State Characteristics
(AMP)	300
	300
	200


CURRENT
CURRENT
SURGE	100
	100
,PEAK	70



	50

SM		TC = 80°C
SM		TC = 80°C
T		f = 60 Hz
T	30	SURGE IS PRECEDED AND								FOLLOWED		BY RATED			CURRENT
		SURGE IS PRECEDED AND								FOLLOWED		BY RATED			CURRENT


	1					2			3				5			7	10

NUMBER OF CYCLES

Figure 7. Maximum On-Repetitive Surge Current

Motorola Thyristor Device Data

MAC321 Series

RESISTANCETHERMALTRANSIENT (NORMALIZED)	1
	0.5



	0.2

													Z	θ	JC(t)		= r(t) •RθJC
	0.1												Z	θ	JC(t)		= r(t) •RθJC
	0.1
	0.05




r(t),	0.02



	0.01
	0.01
	0.1	0.2	0.5	1	2	5	10	20	50	100	200	500				1 k		2 k	5 k	10 k
									t, TIME (ms)

Figure 8. Thermal Response

4	Motorola Thyristor Device Data

MAC321 Series

PACKAGE DIMENSIONS

							NOTES:
							1. DIMENSIONING AND TOLERANCING PER ANSI
				±T±	PLANESEATING		Y14.5M, 1982.
				±T±	PLANESEATING		2. CONTROLLING DIMENSION: INCH.
							3. DIMENSION Z DEFINES A ZONE WHERE ALL
	B		F	C			BODY AND LEAD IRREGULARITIES ARE
	B		F	C			ALLOWED.
			T		S			INCHES		MILLIMETERS
					S			INCHES		MILLIMETERS
							DIM	MIN	MAX	MIN	MAX
		4					A	0.570	0.620	14.48	15.75
Q		4	A		STYLE 4:		B	0.380	0.405	9.66	10.28
					STYLE 4:		B	0.380	0.405	9.66	10.28
					PIN 1. MAIN TERMINAL 1		C	0.160	0.190	4.07	4.82
1	2	3	U		2.	MAIN TERMINAL 2	D	0.025	0.035	0.64	0.88
1	2	3	U		3.	GATE	F	0.142	0.147	3.61	3.73
H					4.	MAIN TERMINAL 2	G	0.095	0.105	2.42	2.66
							H	0.110	0.155	2.80	3.93
			K				J	0.014	0.022	0.36	0.55
Z							K	0.500	0.562	12.70	14.27
Z							L	0.045	0.055	1.15	1.39
							L	0.045	0.055	1.15	1.39
							N	0.190	0.210	4.83	5.33
L					R		Q	0.100	0.120	2.54	3.04
L					R		R	0.080	0.110	2.04	2.79
V				J			S	0.045	0.055	1.15	1.39
V				J			T	0.235	0.255	5.97	6.47
G							U	0.000	0.050	0.00	1.27
G							V	0.045	±±±	1.15	±±±
			D				V	0.045	±±±	1.15	±±±
			D				Z	±±±	0.080	±±±	2.04
	N

CASE 221A-04 (TO±220AB)

Motorola Thyristor Device Data

MAC321 Series

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

◊

MAC321/D

*MAC321/D*

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