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MAC210FP

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC210FP/D

Triacs

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

MAC210FP

Series

MAC210AFP

Series

ISOLATED TRIACs

THYRISTORS

10 AMPERES RMS

200 thru 800 VOLTS

• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Three Modes (MAC210FP Series)
or Four Modes (MAC210AFP Series)
MT2	MT1	CASE 221C-02
		CASE 221C-02
G		STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Rating	Symbol	Value	Unit

Repetitive Peak Off-State Voltage(1) (T = ±40 to +125°C)	V		Volts
J	DRM
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC210-4FP, MAC210A4FP		200
MAC210-6FP, MAC210A6FP		400
MAC210-8FP, MAC210A8FP		600
MAC210-10FP, MAC210A10FP		800

On-State RMS Current (T = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2)	I	10	Amps
C	T(RMS)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C)	ITSM	100	Amps
preceded and followed by rated current

Circuit Fusing (t = 8.3 ms)	I2t	40	A2s
Peak Gate Power (TC = +70°C, Pulse Width = 10 μs)	PGM	20	Watts
Average Gate Power (TC = +70°C, t = 8.3 ms)	PG(AV)	0.35	Watt
Peak Gate Current (TC = +70°C, Pulse Width = 10 μs)	IGM	2	Amps
RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%)	V(ISO)	1500	Volts
Operating Junction Temperature	TJ	±40 to +125	°C
Storage Temperature Range	Tstg	±40 to +125	°C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	2.2	°C/W
Thermal Resistance, Case to Sink	RθCS	2.2 (typ)	°C/W
Thermal Resistance, Junction to Ambient	RθJA	60	°C/W

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

2.ThecasetemperaturereferencepointforallTCmeasurementsisapointonthecenterleadofthepackageascloseaspossibletotheplasticbody.

Motorola, Inc. 1995

MAC210FP Series MAC210AFP	Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic		Symbol	Min	Typ	Max	Unit

Peak Blocking Current (Either Direction)		IDRM				μA
(VD = Rated VDRM, Gate Open) TJ = 25°C			Ð	Ð	10	μA
TJ = +125°C			Ð	Ð	2	mA
Peak On-State Voltage (Either Direction)		VTM	Ð	1.2	1.65	Volts
(ITM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)		IGT				mA
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms
Minimum Gate Pulse Width = 2 μs)
MT2(+), G(+)			Ð	12	50
MT2(+), G(±)			Ð	12	50
MT2(±), G(±)			Ð	20	50
MT2(±), G(+) ªAº SUFFIX ONLY			Ð	35	75

Gate Trigger Voltage (Continuous dc)		VGT				Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms
Minimum Gate Pulse Width = 2 μs)
MT2(+), G(+)			Ð	0.9	2
MT2(+), G(±)			Ð	0.9	2
MT2(±), G(±)			Ð	1.1	2
MT2(±), G(+) ªAº SUFFIX ONLY			Ð	1.4	2.5
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C
MT2(+), G(+); MT2(+), G(±); MT2(±), G(±)			0.2	Ð	Ð
MT2(±), G(+) ªAº SUFFIX ONLY			0.2	Ð	Ð

Holding Current (Either Direction)		IH	Ð	6	50	mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA, TC = +25°C)
Turn-On Time		tgt	Ð	1.5	Ð	μs
(Rated VDRM, ITM = 14 A, IGT = 120 mA,
Rise Time = 0.1 μs, Pulse Width = 2 μs)

Critical Rate of Rise of Commutation Voltage		dv/dt(c)	Ð	5	Ð	V/μs
(VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms,
Gate Unenergized, TC = +70°C)
Critical Rate of Rise of Off-State Voltage		dv/dt	Ð	100	Ð	V/μs
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TC = +70°C)

2	Motorola Thyristor Device Data

MAC210FP Series MAC210AFP Series

TYPICAL CHARACTERISTICS

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)

130

120

110

100

CONDUCTION ANGLE = 360°

1	2	3	4	5	6	7	8	9	10
	IT(RMS), RMS ON-STATE CURRENT						(AMPS)

Figure 1. Current Derating

(WATTS)	14
	14		CONDUCTION ANGLE =				360°
DISSIPATION	12		CONDUCTION ANGLE =				360°


	10


POWER	8


	6


AVERAGE,	4
AVERAGE,

D(AV)	2


	0

P		1		2	3	4		5	6	7	8	9	10
	0	1		2	3	4		5	6	7	8	9	10

IT(RMS), RMS ON-STATE CURRENT (AMPS)

Figure 2. Power Dissipation

	100
	100
(AMPS)	50




	20


CURRENT

	10

STATE-
	5





ON	2	TJ = 25°C
ON		°
INSTANTANEOUS,		°
INSTANTANEOUS,		TJ = 125 C
		TJ = 125 C
	1
	1
T	0.5







i

0.2

0.1

0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 3. Maximum On-State Characteristics

	100
(AMP)	80
CURRENT	60
	60

SURGE	40	CYCLE
SURGE

	PEAK
	PEAK	20			T	C	= 70°C
	,					C
	TSM				f = 60 Hz
					f = 60 Hz

				SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
	I			SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
		0
		0
		1						2		3		5			7	10
									NUMBER OF CYCLES
(NORMALIZED)			Figure 4. Maximum Nonrepetitive Surge Current
(NORMALIZED)	2
	2

	1.6									OFF-	STATE		VOLTAGE	= 12 Vdc
	1.6											ALL MODES
												ALL MODES
VOLTAGE	1.2
VOLTAGE
TRIGGER
	0.8

GATE,
	0.4

GT


V	0
	±60					±40		±20	0	20		40			60	80

TC, CASE TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Voltage

Motorola Thyristor Device Data

MAC210FP Series MAC210AFP Series

IGT, GATE TRIGGER CURRENT (NORMALIZED)

1.6

OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

1.2

0.8

0.4

0
±60	±40	±20	0	20	40	60	80

TC, CASE TEMPERATURE (°C)

IH, HOLDING CURRENT (NORMALIZED)

2.8
2.8
2.4

	OFF-STATE	VOLTAGE	= 12	Vdc
	OFF-STATE	VOLTAGE	= 12	Vdc
2	ALL	MODES


1.6


1.2


0.8


0.4


0

±60 ±40 ±20 0 20 40 60 80

TC, CASE TEMPERATURE (°C)

Figure 6. Typical Gate Trigger Current

Figure 7. Typical Holding Current

r(t), TRANSIENT THERMAL RESISTANCE

	1
(NORMALIZED)	0.5



	0.2


											Zθ	JC(t)	=	r(t) •RθJC
	0.1										Zθ	JC(t)	=	r(t) •RθJC
	0.1
	0.05




	0.02



	0.01
	0.01
	0.1	0.2	0.5	1	2	5	20	50	100	200	500		1 k		2 k	5 k	10 k
							t, TIME (ms)

Figure 8. Thermal Response

4	Motorola Thyristor Device Data

MAC210FP Series MAC210AFP Series

PACKAGE DIMENSIONS

					±T±	SEATING
	±B±			F	C	PLANE
	±B±

		P			S
					N
					E
	Q			A
H	Q
H	1	2	3
	1	2	3

±Y±

L	J
G	R
D 3 PL
0.25 (0.010) M	B M Y

STYLE 3:

PIN 1. MT 1

2.MT 2

3.GATE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.680	0.700	17.28	17.78
B	0.388	0.408	9.86	10.36
C	0.175	0.195	4.45	4.95
D	0.025	0.040	0.64	1.01
E	0.340	0.355	8.64	9.01
F	0.140	0.150	3.56	3.81
G	0.100 BSC		2.54 BSC
H	0.110	0.155	2.80	3.93
J	0.018	0.028	0.46	0.71
K	0.500	0.550	12.70	13.97
L	0.045	0.070	1.15	1.77
N	0.049	±±±	1.25	±±±
P	0.270	0.290	6.86	7.36
Q	0.480	0.500	12.20	12.70
R	0.090	0.120	2.29	3.04
S	0.105	0.115	2.67	2.92
Z	0.070	0.090	1.78	2.28

CASE 221C±02

Motorola Thyristor Device Data

MAC210FP Series MAC210AFP Series

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

◊	MAC210FP/D

*MAC210FP/D*

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