MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MKP1V120/D
Sidac High Voltage
Bilateral Triggers
. . . designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like an SCR until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Applications are:
•High Pressure Sodium Vapor Lighting
•Strobes and Flashers
•Ignitors
•High Voltage Regulators
•Pulse Generators
MKP1V120
MKP1V130
SIDACs
0.9 AMPERES RMS
110 thru 280 VOLTS
MT1 |
MT2 |
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(DO-41) |
Polarity denoted by cathode band |
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating |
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MKP1V120 |
Unit |
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MKP1V130 |
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Off-State Repetitive Voltage |
VDRM |
±90 |
Volts |
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On-State Current RMS (TL = 80°C, Lead Length = 3/8″ , |
IT(RMS) |
0.9 |
Amp |
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conduction angle = 180°, 60 Hz Sine Wave) |
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On-State Surge Current (Non-repetitive) |
ITSM |
4 |
Amps |
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(60 Hz One Cycle Sine Wave, Peak Value) |
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Operating Junction Temperature Range |
TJ |
±40 to +125 |
°C |
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Storage Temperature Range |
Tstg |
±40 to +150 |
°C |
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Lead Solder Temperature |
TL |
230 |
°C |
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(Lead Length ≥ 1/16″ from Case, 10 s Max) |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Lead |
RqJL |
40 |
°C/W |
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Lead Length = 3/8″ |
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REV 1
Motorola, Inc. 1995
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MKP1V120 |
MKP1V130 |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; both directions) |
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Characteristic |
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Symbol |
Min |
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Typ |
Max |
Unit |
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Breakover Voltage |
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MKP1V120 |
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VBO |
110 |
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Ð |
130 |
Volts |
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MKP1V130 |
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120 |
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Ð |
140 |
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Repetitive Peak Off-State Current |
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TJ = 125°C |
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IDRM |
Ð |
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5 |
μA |
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(60 Hz Sine Wave, VD = Rated VDRM) |
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Ð |
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50 |
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Forward ªOnº Voltage |
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VTM |
Ð |
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1.3 |
1.5 |
Volts |
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(ITM = 1 A) |
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Dynamic Holding Current |
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IH |
Ð |
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Ð |
100 |
mA |
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Switching Resistance |
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RS |
0.1 |
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Ð |
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kΩ |
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Breakover Current |
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IBO |
Ð |
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200 |
μA |
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Maximum Rate-of-Change of On-State Current |
MKP1V120, 130, |
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di/dt |
Ð |
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90 |
Ð |
A/μs |
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(°C) |
140 |
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1.0 |
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LEADTEMPERATURE |
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Conduction Angle = 180° |
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CURRENTSTATE- (AMPS) |
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TJ = 125°C |
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80 |
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0.4 |
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130 |
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TL |
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Sine Wave |
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120 |
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0.8 |
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Conduction Angle = 180° |
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3 |
″ |
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3 |
″ |
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110 |
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8 |
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8 |
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Assembled in PCB |
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100 |
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0.6 |
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Lead Length = 3 8″ |
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TJ = 125°C |
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ALLOWABLE |
90 |
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Sine Wave |
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T(RMS) |
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70 |
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, ON |
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MAXIMUM |
60 |
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0.2 |
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40 |
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I |
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50 |
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, |
0 |
0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
1.4 |
1.6 |
1.8 |
2.0 |
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0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
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L |
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T |
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IT(RMS) ON-STATE CURRENT (AMPS) |
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TA, MAXIMUM AMBIENT TEMPERATURE (°C) |
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Figure 1. Maximum Lead Temperature |
Figure 2. Maximum Ambient Temperature |
I T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
10 |
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7.0 |
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5.0 |
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3.0 |
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2.0 |
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125°C |
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TJ = 25 C |
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1.0
0.7
0.5
0.3
0.2
0.1
0 |
1.0 |
2.0 |
3.0 |
4.0 |
5.0 |
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 3. Typical On-State Voltage
PRMS, POWER DISSIPATION (WATTS)
1.25
TJ = 25°C
1.00Conduction Angle = 180°C
0.75
0.50
0.25
0 |
0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
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IT(RMS), ON-STATE CURRENT (AMPS) |
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Figure 4. Power Dissipation
2 |
Motorola Thyristor Device Data |
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
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MKP1V120 |
MKP1V130 |
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THERMAL CHARACTERISTICS |
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1.0 |
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0.7 |
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0.5 |
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The temperature of the lead should be measured |
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0.3 |
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using a thermocouple placed on the lead as close as |
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0.2 |
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possible to the tie point. Thethermal mass connected |
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ZθJL(t) = RθJL •r(t) |
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to the tie point is normally large enough so that it will |
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not significantly respond to heat surges generated in |
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0.1 |
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TJL = Ppk RθJL[r(t)] |
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tp |
TIME |
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the diode as a result of pulsed operation once steady- |
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0.07 |
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where: |
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state conditions are achieved. Using the measured |
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TJL = the increase in junction temperature above the |
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0.05 |
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value of TL, the junction temperature may be deter- |
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lead temperature |
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mined by: |
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0.03 |
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r(t) = normalized value of transient thermal resistance |
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TJ = TL + TJL |
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0.02 |
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at time, t from this figure. For example, |
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r(tp) = normalized value of |
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0.01 |
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transient resistance at time tp. |
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0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
1.0 k |
2.0 k |
5.0 k |
10 k |
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t, TIME (ms) |
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Figure 5. Thermal Response
TYPICAL CHARACTERISTICS
VBO, BREAKOVER VOLTAGE (NORMALIZED)
1.0
0.9
0.8 |
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±60 |
±40 |
±20 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 6. Breakover Voltage
I H , HOLDING CURRENT (NORMALIZED)
1.4
1.2
1.0
0.8
0.6
0.4 ±60 ±40 ±20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Holding Current
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, PEAK CURRENT |
IPK |
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10 |
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10% |
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PK |
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I |
tw |
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1.0 |
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0.1 |
1.0 |
10 |
100 |
tw, PULSE WIDTH (ms)
Figure 8. Pulse Rating Curve
ITM |
VTM |
Slope = RS |
IH |
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IS |
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IDRM |
VS |
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I(BO) |
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VDRM |
V(BO) |
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(V(BO) *VS ) |
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RS + (IS *I(BO) ) |
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Figure 9. V-I Characteristics |
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Motorola Thyristor Device Data |
3 |
MKP1V120 MKP1V130
PACKAGE DIMENSIONS
B
NOTES:
1.POLARITY DENOTED BY CATHODE BAND.
2.LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION.
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D |
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K |
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MILLIMETERS |
INCHES |
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DIM |
MIN |
MAX |
MIN |
MAX |
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A |
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A |
5.97 |
6.60 |
0.235 |
0.260 |
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B |
2.79 |
3.05 |
0.110 |
0.120 |
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D |
0.76 |
0.86 |
0.030 |
0.034 |
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K |
27.94 |
±±± |
1.100 |
±±± |
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K
CASE 59±04 (DO±41) ISSUE M
DATE 09/25/84
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
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MKP1V120/D |
*MKP1V120/D*