motorola / THYRIST / MAC15_DR

Symbol

Parameter

Value

Unit

VDRM

Peak Repetitive Off-State Voltage (1)

Volts

(± 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)

MAC15D

400

MAC15M

600

MAC15N

800

IT(RMS)

On-State RMS Current

15

A

(60 Hz, TC = 80°C)

ITSM

Peak Non-repetitive Surge Current

150

A

(One Full Cycle, 60 Hz, TJ = 125°C)

I2t

Circuit Fusing Consideration (t = 8.3 ms)

93

A2sec

PGM

Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C)

20

Watts

PG(AV)

Average Gate Power (t = 8.3 ms, TC = 80°C)

0.5

Watts

TJ

Operating Junction Temperature Range

± 40 to +125

°C

Tstg

Storage Temperature Range

± 40 to +150

°C

THERMAL CHARACTERISTICS

RqJC

Thermal Resistance Ð Junction to Case

2.0

°C/W

RqJA

Thermal Resistance Ð Junction to Ambient

62.5

TL

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

260

°C

Motorola Thyristor Device Data

3±55

MAC15

SERIES

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

IDRM

Peak Repetitive Blocking Current

TJ = 25°C

Ð

Ð

0.01

mA

(VD = Rated VDRM, Gate Open)

TJ = 125°C

Ð

Ð

2.0

ON CHARACTERISTICS

VTM

Peak On-State Voltage*

Volts

(ITM = ± 21 A Peak)

Ð

1.2

1.6

IGT

Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω)

5.0

13

35

mA

MT2(+), G(+)

MT2(+), G(±)

5.0

16

35

MT2(±), G(±)

5.0

18

35

IH

Hold Current

mA

(VD = 12 V, Gate Open, Initiating Current = ±150 mA)

Ð

20

40

IL

Latch Current (VD = 24 V, IG = 35 mA)

Ð

33

50

mA

MT2(+), G(+)

MT2(+), G(±)

Ð

36

80

MT2(±), G(±)

Ð

33

50

VGT

Gate Trigger Voltage (VD = 12 V, RL = 100 Ω)

0.5

0.75

1.5

Volts

MT2(+), G(+)

MT2(+), G(±)

0.5

0.72

1.5

MT2(±), G(±)

0.5

0.82

1.5

DYNAMIC CHARACTERISTICS

(di/dt)c

Rate of Change of Commutating Current* See Figure 10.

9.0

Ð

Ð

A/ms

(VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/μs,

CL = 10 μF

Gate Open, TJ = 125°C, f = 250 Hz, No Snubber)

LL = 40 mH

dv/dt

Critical Rate of Rise of Off-State Voltage

250

Ð

Ð

V/μs

(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)

*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

3±56

Motorola Thyristor Device Data

MAC15

SERIES

100

r(t), TRANSIENT THERMAL RESISTANCE

1

TYPICAL AT

MAXIMUM @ TJ = 125°C

TJ = 25°C

(NORMALIZED)

0.1

(AMP)

10

CURRENT

0.01

1

10

100

1000

1 ´ 104

0.1

t, TIME (ms)

ON-STATE

Figure 4. Thermal Response

,INSTANTANEOUS

MAXIMUM @ TJ = 25°C

40

1

T

I

(mA)

CURRENT

MT2 POSITIVE

, HOLD

MT2 NEGATIVE

H

I

0.1

0.5

1

1.5

2

2.5

3

3.5

4

5± 40

± 10

20

50

80

110

125

0

VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (°C)

Figure 3. On-State Characteristics

Figure 5. Hold Current Variation

Figure 6. Gate Trigger Current Variation

Figure 7. Gate Trigger Voltage Variation

Motorola Thyristor Device Data

3±57

MAC15

SERIES

VOLTAGE

5000

100

VD = 800 Vpk

CRITICAL RATE OF RISE OF OFF-STATE

OF

4K

TJ = 125°C

OF RISE

3K

TJ = 125°C

100°C

75°C

RATE

10

2K

CRITICAL

COMMUTATINGVOLTAGE(V/s)μ

ITM

1

,

f =

1K

c

tw

2 tw

(V/s)μ

(dv/dt)

6f ITM

(di/dt)c =

VDRM

1000

,

010

110

dv/dt

100

1000

10000

20

30

40

50

60

70

80

90

100

RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)

(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 8. Critical Rate of Rise of Off-State Voltage

Figure 9. Critical Rate of Rise of

(Exponential)

Commutating Voltage

LL

1N4007

200 VRMS

ADJUST FOR

MEASURE

ITM, 60 Hz VAC

I

TRIGGER

CHARGE

CONTROL

±

CONTROL

CHARGE

400 V

+

2

TRIGGER

NON-POLAR

1N914

51

G

1

CL

3±58

Motorola Thyristor Device Data