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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC223/D

Triacs

Silicon Bidirectional Triode Thyristors

. . . designed primarily for full-wave ac control applications such as lighting sysjtems, heater controls, motor controls and power supplies; or wherever full-wave silicon- gate-controlled devices are needed.

•Off-State Voltages to 800 Volts

•All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Thermal Resistance and High Heat Dissipation

•Gate Triggering Guaranteed in Three Modes (MAC223 Series) or Four Modes (MAC223A Series)

MAXIMUM RATINGS (TJ = 25° unless otherwise noted.)

MAC223

Series

MAC223A

Series

TRIACs

25 AMPERES RMS

200 thru 800 VOLTS

MT2	MT1
	G

CASE 221A-04 (TO-220AB)

STYLE 4

Rating	Symbol	Value	Unit

Peak Repetitive Off-State Voltage	VDRM		Volts
(T = ±40 to 125°C)(1)
J
(1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC223-4, MAC223A4		200
MAC223-6, MAC223A6		400
MAC223-8, MAC223A8		600
MAC223-10, MAC223A10		800

On-State RMS Current (TC = 80°C)	IT(RMS)	25	Amps
(Full Cycle Sine Wave 50 to 60 Hz)

Peak Non-repetitive Surge Current	ITSM	250	Amps
(One Full Cycle, 60 Hz, TC = 80°C, preceded and followed by rated current)
Circuit Fusing	I2t	260	A2s
(t = 8.3 ms)

Peak Gate Current (t p 2 μs)	IGM	2	Amps
Peak Gate Voltage (t p 2 μs)	VGM	±10	Volts
Peak Gate Power (t p 2 μs)	PGM	20	Watts
Average Gate Power (TC = 80°C, t p 8.3 ms)	PG(AV)	0.5	Watts
Operating Junction Temperature Range	TJ	±40 to 125	°C
Storage Temperature Range	Tstg	±40 to 150	°C
Mounting Torque	Ð	8	in. lb.

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Motorola, Inc. 1995

MAC223 Series MAC223A Series

THERMAL CHARACTERISTICS

Characteristic		Symbol			Max		Unit

Thermal Resistance, Junction to Case		RθJC		1.2			°C/W
Thermal Resistance, Junction to Ambient		RθJA		60			°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic	Symbol		Min		Typ	Max		Unit

Peak Blocking Current(1)	I
(VD = Rated VDRM) TJ = 25°C	DRM		Ð		Ð	10		μA
(VD = Rated VDRM) TJ = 25°C			Ð		Ð	10		μA
TJ = 125°C			Ð		Ð	2		mA
Peak On-State Voltage	VTM		Ð		1.4	1.85		Volts
(ITM = 35 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)	IGT							mA
(VD = 12 V, RL = 100 Ω)
MT2(+ ), G( + ); MT2( ± ), G( ± ); MT(+ ), G( ± )			Ð		20	50
MT2(± ), G( + ) ªAº SUFFIX ONLY			Ð		30	75

Gate Trigger Voltage (Continuous dc)	VGT							Volts
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(±), G(±); MT(+), G(±)			Ð		1.1	2
MT2(±), G(+) ªAº SUFFIX ONLY			Ð		1.3	2.5
(VD = Rated VDRM, TJ = 125°C, RL = 10 k)			0.2		0.4	Ð
MT(+), G(+); MT2(±), G(±); MT2(+), G(±)
MT2(±), G(+) ªAº SUFFIX ONLY			0.2		0.4	Ð

Holding Current	IH		Ð		10	50		mA
(VD = 12 V, ITM = 200 mA, Gate Open)
Gate Controlled Turn-On Time	tgt		Ð		1.5	Ð		μs
(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA)
Critical Rate of Rise of Off-State Voltage	dv/dt		Ð		40	Ð		V/μs
(VD = Rated VDRM, Exponential Waveform, TC = 125°C)
Critical Rate of Rise of Commutation Voltage	dv/dt(c)		Ð		5	Ð		V/μs
(VD = Rated VDRM, ITM = 35 A Peak, Commutating
di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C)

1.Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage.

TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)

	FIGURE 1 ± RMS CURRENT DERATING								FIGURE 2 ± ON-STATE POWER DISSIPATION
125							(WATTS)	40
125								40
115


							DISSIPATION	30
105							DISSIPATION
							POWER
								20

95



85							AVERAGE,	10



75
							D




							P	0


0	5.0		10	15	20	25		0	5.0		10	15	20	25
		IT(RMS), RMS ON-STATE CURRENT (AMPS)								IT(RMS), RMS ON-STATE CURRENT (AMPS)

2	Motorola Thyristor Device Data

FIGURE 3 ± GATE TRIGGER CURRENT

CURRENT	3.0







	2.0
GATE	2.0						VD =	12 V
							VD =	12 V
	1.0						RL =	100	Ω
							RL =	100	Ω
NORMALIZED	0.5





	0.3


	0.2
	0.2
	0.1
	0.1
	±60	±40	±20	0	20	40	60		80	100	120	140
				TJ, JUNCTION TEMPERATURE (°C)

FIGURE 5 ± HOLD CURRENT

CURRENT	2.0







							ITM =		200 mA
HOLD	1.0						ITM =		200 mA
HOLD	1.0						Gate		Open
							Gate		Open
NORMALIZED	0.5





	0.3
	0.3
	0.2
	0.2
	0.1
	0.1
	±60	±40	±20	0	20	40		60		80	100	120	140
				TJ, JUNCTION TEMPERATURE (°C)

MAC223 Series MAC223A Series

FIGURE 4 ± GATE TRIGGER VOLTAGE

VOLTAGE	3.0







	2.0
GATE	2.0						VD =		12 V
							VD =		12 V
	1.0						RL =		100	Ω
							RL =		100	Ω
NORMALIZED	0.5





	0.3


	0.2
	0.2
	0.1
	0.1
	±60	±40	±20	0	20	40		60		80	100	120	140
				TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6 ± TYPICAL ON-STATE CHARACTERISTICS

(AMPS)
CURRENT	200
CURRENT

	100


-STATE	50




	10

					°
				TJ =	25 C
ON	5.0			TJ =	25 C



INSTANTANEOUS,
	0.1


	1.0


TM	0.5







	0	1.0	2.0			3.0	4.0
i

VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Motorola Thyristor Device Data

MAC223 Series MAC223A Series

PACKAGE DIMENSIONS

							NOTES:
					SEATING		1. DIMENSIONING AND TOLERANCING PER ANSI
				±T±	SEATING		Y14.5M, 1982.
				±T±	PLANE		2. CONTROLLING DIMENSION: INCH.
							2. CONTROLLING DIMENSION: INCH.
							3. DIMENSION Z DEFINES A ZONE WHERE ALL
	B		F	C			BODY AND LEAD IRREGULARITIES ARE
	B		F	C			ALLOWED.
				T	S		ALLOWED.
				T
								INCHES		MILLIMETERS
								INCHES		MILLIMETERS
							DIM	MIN	MAX	MIN	MAX
		4					A	0.570	0.620	14.48	15.75
Q		4	A				B	0.380	0.405	9.66	10.28
							B	0.380	0.405	9.66	10.28
					STYLE 4:		C	0.160	0.190	4.07	4.82
					STYLE 4:		C	0.160	0.190	4.07	4.82
1	2	3		U	PIN 1. MAIN TERMINAL 1		D	0.025	0.035	0.64	0.88
1	2	3		U	2.	MAIN TERMINAL 2	F	0.142	0.147	3.61	3.73
H					2.	MAIN TERMINAL 2	F	0.142	0.147	3.61	3.73
H					3.	GATE	G	0.095	0.105	2.42	2.66
			K		4.	MAIN TERMINAL 2	H	0.110	0.155	2.80	3.93
Z			K				J	0.014	0.022	0.36	0.55
Z							K	0.500	0.562	12.70	14.27
							L	0.045	0.055	1.15	1.39
							N	0.190	0.210	4.83	5.33
L					R		Q	0.100	0.120	2.54	3.04
L					R		R	0.080	0.110	2.04	2.79
							R	0.080	0.110	2.04	2.79
V				J			S	0.045	0.055	1.15	1.39
V				J			T	0.235	0.255	5.97	6.47
							T	0.235	0.255	5.97	6.47
G							U	0.000	0.050	0.00	1.27
			D				V	0.045	±±±	1.15	±±±
	N		D				Z	±±±	0.080	±±±	2.04
	N

CASE 221A-04 (TO±220AB)

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

◊

MAC223/D

*MAC223/D*

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