MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TRIACS
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
•Blocking Voltage to 800 Volts
•On-State Current Rating of 15 Amperes RMS at 80°C
•Uniform Gate Trigger Currents in Three Modes
•High Immunity to dv/dt Ð 500 V/ μs minimum at 125°C
•Minimizes Snubber Networks for Protection
•Industry Standard TO-220AB Package
•High Commutating di/dt Ð 9.0 A/ms minimum at 125 °C
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
MAC16
SERIES*
*Motorola preferred devices
TRIACS
15 AMPERES RMS
400 thru 800 VOLTS
MT2
MT1
MT2
G
CASE 221A-06 (TO-220AB)
Style 4
Symbol |
Parameter |
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Value |
Unit |
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VDRM |
Peak Repetitive Off-State Voltage, (1) |
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Volts |
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(± 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) |
MAC16D |
400 |
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MAC16M |
600 |
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MAC16N |
800 |
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IT(RMS) |
On-State RMS Current |
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15 |
A |
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(60 Hz, TC = 80°C) |
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ITSM |
Peak Non-repetitive Surge Current |
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150 |
A |
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(One Full Cycle, 60 Hz, TJ = 125°C) |
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I2t |
Circuit Fusing Consideration (t = 8.3 ms) |
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93 |
A2sec |
PGM |
Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) |
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20 |
Watts |
PG(AV) |
Average Gate Power (t = 8.3 ms, TC = 80°C) |
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0.5 |
Watts |
TJ |
Operating Junction Temperature Range |
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± 40 to +125 |
°C |
Tstg |
Storage Temperature Range |
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± 40 to +150 |
°C |
THERMAL CHARACTERISTICS |
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RqJC |
Thermal Resistance Ð Junction to Case |
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2.0 |
°C/W |
RqJA |
Thermal Resistance Ð Junction to Ambient |
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62.5 |
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TL |
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds |
260 |
°C |
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(1)VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data |
3±67 |
MAC16 |
SERIES |
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) |
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Symbol |
Characteristic |
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Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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IDRM |
Peak Repetitive Blocking Current |
TJ = 25°C |
Ð |
Ð |
0.01 |
mA |
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(VD = Rated VDRM, Gate Open) |
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TJ = 125°C |
Ð |
Ð |
2.0 |
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ON CHARACTERISTICS |
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VTM |
Peak On-State Voltage* |
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Volts |
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(ITM = ± 21 A Peak) |
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Ð |
1.2 |
1.6 |
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IGT |
Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω) |
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10 |
16 |
50 |
mA |
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MT2(+), G(+) |
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MT2(+), G(±) |
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10 |
18 |
50 |
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MT2(±), G(±) |
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10 |
22 |
50 |
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IH |
Hold Current |
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mA |
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(VD = 12 V, Gate Open, Initiating Current = ±150 mA) |
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Ð |
20 |
50 |
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IL |
Latch Current (VD = 24 V, IG = 50 mA) |
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Ð |
33 |
50 |
mA |
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MT2(+), G(+) |
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MT2(+), G(±) |
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Ð |
36 |
80 |
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MT2(±), G(±) |
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Ð |
33 |
50 |
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VGT |
Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) |
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0.5 |
0.75 |
1.5 |
Volts |
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MT2(+), G(+) |
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MT2(+), G(±) |
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0.5 |
0.72 |
1.5 |
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MT2(±), G(±) |
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0.5 |
0.82 |
1.5 |
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DYNAMIC CHARACTERISTICS |
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(di/dt)c |
Rate of Change of Commutating Current* See Figure 10. |
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9.0 |
Ð |
Ð |
A/ms |
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(VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/μs, |
CL = 10 μF |
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Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) |
LL = 40 mH |
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dv/dt |
Critical Rate of Rise of Off-State Voltage |
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500 |
Ð |
Ð |
V/μs |
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(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) |
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*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. |
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125 |
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120 |
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(°C) |
115 |
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α = 30 and 60° |
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TEMPERATURE |
110 |
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α = 90° |
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105 |
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α = 180° |
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α = 120° |
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100 |
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CASE |
95 |
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DC |
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, |
90 |
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C |
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T |
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85 |
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80 |
2 |
4 |
6 |
8 |
10 |
12 |
14 |
16 |
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0 |
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IT(RMS), RMS ON-STATE CURRENT (AMP) |
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Figure 1. RMS Current Derating
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20 |
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DC |
180° |
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18 |
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(WATTS) |
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16 |
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120° |
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90° |
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14 |
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POWER |
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60° |
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12 |
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10 |
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AVERAGE |
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8 |
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α = 30° |
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6 |
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, |
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AV |
4 |
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P |
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2 |
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0 |
2 |
4 |
6 |
8 |
10 |
12 |
14 |
16 |
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0 |
IT(RMS), ON-STATE CURRENT (AMP)
Figure 2. On-State Power Dissipation
3±68 |
Motorola Thyristor Device Data |
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MAC16 |
SERIES |
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100 |
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r(t), TRANSIENT THERMAL RESISTANCE |
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1 |
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TYPICAL AT |
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MAXIMUM @ TJ = 125°C |
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TJ = 25°C |
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(NORMALIZED) |
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0.1 |
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(AMP) |
10 |
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CURRENT |
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0.01 |
1 |
10 |
100 |
1000 |
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1 ´ 104 |
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0.1 |
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t, TIME (ms) |
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ON-STATE |
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Figure 4. Thermal Response |
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,INSTANTANEOUS |
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MAXIMUM @ TJ = 25°C |
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40 |
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1 |
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T |
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I |
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(mA) |
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CURRENT |
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MT2 POSITIVE |
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, HOLD |
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MT2 NEGATIVE |
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H |
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I |
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0.1 |
0.5 |
1 |
1.5 |
2 |
2.5 |
3 |
3.5 |
4 |
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5± 40 |
± 10 |
20 |
50 |
80 |
110 |
125 |
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0 |
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VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 3. On-State Characteristics |
Figure 5. Hold Current Variation |
100 |
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(mA) |
Q2 |
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CURRENT |
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Q3 |
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Q1 |
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,GATE TRIGGER |
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OFF-STATE VOLTAGE = 12 V |
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GT |
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RL = 140 |
Ω |
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I |
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1 |
± 10 |
20 |
50 |
80 |
110 |
125 |
± 40 |
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TJ, JUNCTION TEMPERATURE (°C) |
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1 |
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VOLTAGE (VOLT) |
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OFF-STATE VOLTAGE = 12 V |
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RL = 140 Ω |
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Q1 |
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TRIGGER |
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Q3 |
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Q2 |
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, GATE |
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GT |
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V |
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0.5 |
± 10 |
+20 |
50 |
80 |
110 |
125 |
± 40 |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 6. Gate Trigger Current Variation |
Figure 7. Gate Trigger Voltage Variation |
Motorola Thyristor Device Data |
3±69 |
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MAC16 |
SERIES |
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VOLTAGE |
5000 |
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100 |
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VD = 800 Vpk |
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CRITICAL RATE OF RISE OF OFF-STATE |
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OF |
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4K |
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TJ = 125°C |
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OF RISE |
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3K |
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TJ = 125°C |
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100°C |
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75°C |
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RATE |
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10 |
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2K |
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CRITICAL |
COMMUTATINGVOLTAGE(V/s)μ |
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ITM |
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1 |
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, |
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tw |
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f = |
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1K |
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c |
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2 tw |
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(V/s)μ |
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(dv/dt) |
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6f ITM |
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(di/dt)c = |
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VDRM |
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1000 |
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, |
010 |
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110 |
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dv/dt |
100 |
1000 |
10000 |
20 |
30 |
40 |
50 |
60 |
70 |
80 |
90 |
100 |
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RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) |
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(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) |
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Figure 8. Critical Rate of Rise of Off-State Voltage |
Figure 9. Critical Rate of Rise of |
(Exponential) |
Commutating Voltage |
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LL |
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1N4007 |
200 VRMS |
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ADJUST FOR |
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MEASURE |
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ITM, 60 Hz VAC |
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I |
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TRIGGER |
CHARGE |
CONTROL |
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± |
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CONTROL |
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CHARGE |
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400 V |
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+ |
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2 |
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TRIGGER |
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NON-POLAR |
1N914 |
51 |
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G |
1 |
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CL |
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Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
3±70 |
Motorola Thyristor Device Data |