MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6342/D
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.
•Blocking Voltage to 800 Volts
•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
•Gate Triggering Guaranteed in Two Modes (2N6342, 2N6343, 2N6344, 2N6345) or Four Modes (2N6346, 2N6347, 2N6348, 2N6349)
•For 400 Hz Operation, Consult Factory
•12 Ampere Devices Available as 2N6342A thru 2N6349A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
2N6342 thru 2N6349
TRIACs
8 AMPERES RMS
200 thru 800 VOLTS
MT1
MT2
G
CASE 221A-04 (TO-220AB)
STYLE 4
Rating |
Symbol |
Value |
Unit |
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*Peak Repetitive Off-State Voltage(1) |
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V |
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Volts |
(Gate Open, TJ = ±40 to +110°C) |
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DRM |
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1/2 Sine Wave 50 to 60 Hz, Gate Open |
2N6342, 2N6346 |
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200 |
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2N6343, 2N6347 |
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400 |
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2N6344, 2N6348 |
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600 |
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2N6345, 2N6349 |
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800 |
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*RMS On-State Current |
(TC = +80°C) |
IT(RMS) |
8 |
Amps |
Full Cycle Sine Wave 50 to 60 Hz |
(TC = +90°C) |
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4 |
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*Peak Non-repetitive Surge Current |
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ITSM |
100 |
Amps |
(One Full Cycle, 60 Hz, TC = +80°C) |
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Preceded and followed by Rated Current |
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Circuit Fusing |
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I2t |
40 |
A2s |
(t = 8.3 ms) |
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*Peak Gate Power (TC = +80°C, Pulse Width = 2 μs) |
PGM |
20 |
Watts |
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*Average Gate Power (TC = +80°C, t = 8.3 ms) |
PG(AV) |
0.5 |
Watt |
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*Peak Gate Current |
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IGM |
2 |
Amps |
*Peak Gate Voltage |
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VGM |
10 |
Volts |
*Operating Junction Temperature Range |
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TJ |
±40 to +125 |
°C |
*Storage Temperature Range |
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Tstg |
±40 to +150 |
°C |
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
REV 1
Motorola, Inc. 1995
2N6342 thru 2N6349
THERMAL CHARACTERISTICS
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Characteristic |
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Symbol |
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Max |
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Unit |
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*Thermal Resistance, Junction to Case |
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RθJC |
2.2 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25°C, and Either Polarity of MT2 to MT1 Voltage, unless otherwise noted.) |
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Characteristic |
Symbol |
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Min |
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Typ |
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Max |
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Unit |
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*Peak Blocking Current |
TJ = 25°C |
IDRM |
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Ð |
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Ð |
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10 |
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μA |
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(VD = Rated VDRM, gate open) |
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TJ = 100°C |
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Ð |
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Ð |
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2 |
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mA |
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*Peak On-State Voltage |
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VTM |
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Ð |
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1.3 |
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1.55 |
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Volts |
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(ITM = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%) |
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Gate Trigger Current (Continuous dc) |
IGT |
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mA |
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(VD = 12 Vdc, RL = 100 Ohms) |
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(Minimum Gate Pulse Width = 2 μs) |
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MT2(+), G(+) All Types |
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Ð |
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12 |
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50 |
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MT2(+), G(±) 2N6346 thru 49 |
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Ð |
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12 |
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75 |
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MT2(±), G(±) All Types |
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Ð |
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20 |
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50 |
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MT2(±), G(+) 2N6346 thru 49 |
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Ð |
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35 |
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75 |
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*MT2(+), G(+); MT2(±), G(±) TC = ±40°C All Types |
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Ð |
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Ð |
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100 |
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*MT2(+), G(±); MT2(±), G(+) TC = ±40°C 2N6346 thru 49 |
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Ð |
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Ð |
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125 |
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Gate Trigger Voltage (Continuous dc) |
VGT |
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Volts |
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(VD = 12 Vdc, RL = 100 Ohms) |
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(Minimum Gate Pulse Width = 2 μs) |
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MT2(+), G(+) All Types |
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Ð |
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0.9 |
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2 |
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MT2(+), G(±) 2N6346 thru 49 |
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Ð |
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0.9 |
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2.5 |
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MT2(±), G(±) All Types |
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Ð |
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1.1 |
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2 |
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MT2(±), G(+) 2N6346 thru 49 |
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Ð |
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1.4 |
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2.5 |
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*MT2(+), G(+); MT2(±), G(±) TC = ±40°C All Types |
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Ð |
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Ð |
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2.5 |
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*MT2(+), G(±); MT2(±), G(+) TC = ±40°C 2N6346 thru 49 |
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Ð |
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Ð |
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3 |
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(VD = Rated VDRM, RL = 10 k Ohms, TJ = 100°C) |
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*MT2(+), G(+); MT2(±), G(±) All Types |
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0.2 |
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Ð |
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Ð |
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*MT2(+), G(±); MT2(±), G(±) 2N6346 thru 49 |
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0.2 |
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Ð |
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Ð |
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*Holding Current |
TC = 25°C |
IH |
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Ð |
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6 |
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40 |
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mA |
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(VD = 12 Vdc, Gate Open) |
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(IT = 200 mA) |
*TC = ±40°C |
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Ð |
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Ð |
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75 |
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*Turn-On Time |
|
tgt |
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Ð |
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1.5 |
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2 |
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μs |
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(VD = Rated VDRM, ITM = 11 A, IGT = 120 mA, |
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Rise Time = 0.1 μs, Pulse Width = 2 μs) |
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Critical Rate of Rise of Commutation Voltage |
dv/dt(c) |
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Ð |
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5 |
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Ð |
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V/μs |
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(VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms, |
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Gate Unenergized, TC = 80°C) |
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*Indicates JEDEC Registered Data. |
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FIGURE 1 ± RMS CURRENT DERATING
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100 |
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°C) |
96 |
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α = 30° |
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60° |
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( |
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TEMPERATURE |
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90° |
120° |
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92 |
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180° |
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88 |
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α |
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CASE |
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α |
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, |
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84 |
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C |
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T |
α = CONDUCTION ANGLE |
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dc |
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80 |
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0 |
1.0 |
2.0 |
3.0 |
4.0 |
5.0 |
6.0 |
7.0 |
8.0 |
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IT(RMS), RMS ON-STATE CURRENT (AMP) |
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FIGURE 2 ± ON-STATE POWER DISSIPATION
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10 |
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dc |
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(WATTS) |
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α |
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α = 180° |
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8.0 |
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120° |
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α |
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90° |
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POWER |
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6.0 |
α = CONDUCTION ANGLE |
60° |
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, AVERAGE |
4.0 |
TJ [ 100°C |
30° |
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(AV) |
2.0 |
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P |
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0 |
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8.0 |
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0 |
1.0 |
2.0 |
3.0 |
4.0 |
5.0 |
6.0 |
7.0 |
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IT(RMS), RMS ON-STATE CURRENT (AMP) |
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2 |
Motorola Thyristor Device Data |
Vgt , GATE TRIGGER VOLTAGE (VOLTS)
2N6342 thru 2N6349
FIGURE 3 ± TYPICAL GATE TRIGGER VOLTAGE |
FIGURE 4 ± TYPICAL GATE TRIGGER CURRENT |
1.8 |
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OFF-STATE VOLTAGE = 12 V |
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50 |
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(mA) |
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OFF-STATE VOLTAGE = 12 V |
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1.6 |
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CURRENT |
20 |
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1.4 |
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30 |
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QUADRANT 4 |
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1.2 |
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TRIGGER |
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1.0 |
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1 |
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QUADRANTS |
2 |
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GATE, |
10 |
QUADRANT |
2 |
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4 |
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0.8 |
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1 |
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3 |
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0.6 |
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3 |
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GT |
7.0 |
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I |
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0.4 |
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5.0 |
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±60 |
±40 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
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±40 |
±20 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
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±60 |
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±20 |
TJ, JUNCTION TEMPERATURE (°C) |
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TJ, JUNCTION TEMPERATURE (°C) |
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i TM, INSTANTANEOUS ON-STATE CURRENT (AMP)
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FIGURE 5 ± ON-STATE CHARACTERISTICS |
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FIGURE 6 ± TYPICAL HOLDING CURRENT |
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100 |
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20 |
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GATE OPEN |
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70 |
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(mA) |
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MAIN |
TERMINAL |
#1 |
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50 |
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7.0 |
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POSITIVE |
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30 |
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CURRENT |
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20 |
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HOLDING, |
10 |
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5.0 |
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MAIN |
TERMINAL #2 |
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T |
J |
= 100°C |
25°C |
H |
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POSITIVE |
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10 |
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I |
3.0 |
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7.0 |
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2.0 |
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5.0 |
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±60 |
±40 |
±20 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
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TJ, JUNCTION TEMPERATURE (°C) |
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3.0
2.0 |
FIGURE 7 ± MAXIMUM NON-REPETITIVE SURGE CURRENT |
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(AMP) |
100 |
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1.0 |
80 |
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0.5 |
CURRENT |
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60 |
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0.7 |
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0.3 |
SURGE |
40 |
CYCLE |
0.2 |
, PEAK |
20 |
TJ = 100°C |
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TSM |
f = 60 Hz |
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I |
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Surge is preceded and followed by rated current |
0.1 |
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0 |
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0.4 |
0.8 |
1.2 |
1.6 |
2.0 |
2.4 |
2.8 |
3.2 |
3.6 |
4.0 |
4.4 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) |
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Motorola Thyristor Device Data |
3 |
2N6342 thru 2N6349
r(t), TRANSIENT THERMAL RESISTANCE
FIGURE 8 ± TYPICAL THERMAL RESPONSE
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1.0 |
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(NORMALIZED) |
0.5 |
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0.2 |
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ZθJC(t) = r(t) •RθJC |
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0.1 |
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0.05 |
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0.02 |
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0.01 |
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0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
20 |
50 |
100 |
200 |
500 |
1.0 k |
2.0 k |
5.0 k |
10 k |
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t,TIME (ms) |
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4 |
Motorola Thyristor Device Data |
2N6342 thru 2N6349
PACKAGE DIMENSIONS
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±T± |
PLANESEATING |
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NOTES: |
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1. DIMENSIONING AND TOLERANCING PER ANSI |
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Y14.5M, 1982. |
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B |
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F |
C |
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2. CONTROLLING DIMENSION: INCH. |
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3. DIMENSION Z DEFINES A ZONE WHERE ALL |
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T |
S |
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BODY AND LEAD IRREGULARITIES ARE |
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ALLOWED. |
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INCHES |
MILLIMETERS |
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Q |
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4 |
A |
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DIM |
MIN |
MAX |
MIN |
MAX |
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STYLE 4: |
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A |
0.570 |
0.620 |
14.48 |
15.75 |
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B |
0.380 |
0.405 |
9.66 |
10.28 |
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1 |
2 |
3 |
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U |
PIN 1. MAIN TERMINAL 1 |
C |
0.160 |
0.190 |
4.07 |
4.82 |
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2. |
MAIN TERMINAL 2 |
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H |
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D |
0.025 |
0.035 |
0.64 |
0.88 |
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3. |
GATE |
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F |
0.142 |
0.147 |
3.61 |
3.73 |
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4. |
MAIN TERMINAL 2 |
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K |
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G |
0.095 |
0.105 |
2.42 |
2.66 |
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Z |
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H |
0.110 |
0.155 |
2.80 |
3.93 |
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J |
0.014 |
0.022 |
0.36 |
0.55 |
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K |
0.500 |
0.562 |
12.70 |
14.27 |
L |
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R |
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L |
0.045 |
0.055 |
1.15 |
1.39 |
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N |
0.190 |
0.210 |
4.83 |
5.33 |
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V |
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J |
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Q |
0.100 |
0.120 |
2.54 |
3.04 |
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R |
0.080 |
0.110 |
2.04 |
2.79 |
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G |
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S |
0.045 |
0.055 |
1.15 |
1.39 |
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T |
0.235 |
0.255 |
5.97 |
6.47 |
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D |
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U |
0.000 |
0.050 |
0.00 |
1.27 |
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N |
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V |
0.045 |
±±± |
1.15 |
±±± |
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Z |
±±± |
0.080 |
±±± |
2.04 |
|
CASE 221A-04 (TO±220AB)
Motorola Thyristor Device Data |
5 |
2N6342 thru 2N6349
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
◊ |
2N6342/D |
*2N6342/D*