MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
SOT 223 Triac
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing.
•Sensitive Gate Trigger Current in Four Trigger Modes
•Blocking Voltage to 600 Volts
•Glass Passivated Surface for Reliability and Uniformity
•Surface Mount Package
•Devices Supplied on 1 K Reel
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
MAC08BT1
Series *
*Motorola preferred devices
TRIAC
0.8 AMPERE RMS
200 thru 600 Volts
CASE 318E-04 (SOT-223) STYLE 11
Rating |
Symbol |
Value |
Unit |
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Peak Repetitive Blocking Voltage(1) |
VDRM |
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Volts |
(1/2 Sine Wave, Gate Open, TJ = 25 to 110°C) |
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200 |
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MAC08BT1 |
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MAC08DT1 |
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400 |
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MAC08MT1 |
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600 |
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On-State Current RMS (TC = 80°C) |
IT(RMS) |
0.8 |
Amps |
Peak Non-repetitive Surge Current |
ITSM |
10 |
Amps |
(One Full Cycle, 60 Hz, TC = 25°C) |
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Circuit Fusing Considerations (t = 8.3 ms) |
I2t |
0.4 |
A2s |
Peak Gate Power (t < 2.0 μs) |
PGM |
5.0 |
Watts |
Average Gate Power (TC = 80°C, t = 8.3 ms) |
PG(AV) |
0.1 |
Watts |
Operating Junction Temperature Range |
TJ |
±40 to +110 |
°C |
Storage Temperature Range |
Tstg |
±40 to +150 |
°C |
Maximum Device Temperature for Soldering Purposes (for 5 Seconds Maximum) |
TL |
260 |
°C |
THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Ambient |
RθJA |
156 |
°C/W |
PCB Mounted per Figure 1 |
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Thermal Resistance, Junction to Tab |
RθJT |
25 |
°C/W |
Measured on Anode Tab Adjacent to Epoxy |
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1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
3±40 |
Motorola Thyristor Device Data |
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MAC08BT1 |
Series |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) |
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Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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Peak Repetitive Blocking Current |
IDRM |
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(VD = Rated VDRM Gate Open) TJ = 25°C |
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Ð |
Ð |
10 |
μA |
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TJ = 110°C |
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Ð |
Ð |
200 |
μA |
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Maximum On-State Voltage (Either Direction) |
VTM |
Ð |
Ð |
1.9 |
Volts |
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(IT = 1.1 A Peak, TA = 25°C) |
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Gate Trigger Current (Continuous dc) All Quadrants |
IGT |
Ð |
Ð |
10 |
mA |
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(VD = 7.0 Vdc, RL = 100 Ω) |
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Holding Current (Either Direction) |
IH |
Ð |
Ð |
5.0 |
mA |
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(VD = 7.0 Vdc, Gate Open, |
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Initiating Current = 20 mA, Gate Open) |
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Gate Trigger Voltage (Continuous dc) All Quadrants |
VGT |
Ð |
Ð |
2.0 |
Volts |
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(VD = 7.0 Vdc, RL = 100 Ω) |
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Critical Rate of Rise of Commutation Voltage |
dv/dtc |
1.5 |
Ð |
Ð |
V/μs |
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(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS |
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On-State Current Duration = 2.0 mS, VDRM = 200 V, |
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Gate Unenergized, TC = 110°C, |
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Gate Source Resistance = 150 Ω, See Figure 10) |
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Critical Rate-of-Rise of Off State Voltage |
dv/dt |
10 |
Ð |
Ð |
V/μs |
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(Vpk = Rated VDRM, TC = 110°C, Gate Open, Exponential Method) |
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0.15 |
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3.8 |
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0.079 |
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2.0 |
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0.091 |
0.091 |
0.244 |
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6.2 |
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2.3 |
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2.3 |
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0.079 |
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2.0 |
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0.059 |
0.059 |
0.059 |
inches |
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. |
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mm |
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1.5 |
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1.5 |
1.5 |
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. |
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0.984 |
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25.0 |
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MATERIAL: G10 FIBERGLASS BASE EPOXY |
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0.096 |
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0.096 |
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0.096 |
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2.44 |
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2.44 |
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2.44 |
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0.059 |
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0.059 |
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1.5 |
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1.5 |
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0.472 |
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12.0 |
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Figure 1. PCB for Thermal Impedance and
Power Testing of SOT-223
Motorola Thyristor Device Data |
3±41 |
MAC08BT1 Series
(AMPS) |
10 |
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THERMAL |
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INSTANTANEOUS ON-CURRENTSTATE |
1.0 |
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TO AMBIENT |
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0.1 |
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JUNCTION |
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TYPICAL AT TJ = 110°C |
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MAX AT TJ = 110°C |
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, |
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Rθ JA RESISTANCE,C/W° |
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MAX AT TJ = 25°C |
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, |
0.01 0 |
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T |
1.0 |
2.0 |
3.0 |
4.0 |
5.0 |
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I |
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vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
160 |
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150 |
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TYPICAL |
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L |
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140 |
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MAXIMUM |
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130 |
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DEVICE MOUNTED ON |
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120 |
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L |
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FIGURE 1 AREA = L2 |
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4 |
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110 |
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PCB WITH TAB AREA |
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100 |
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AS SHOWN |
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90 |
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1 |
2 |
3 |
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80 |
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70 |
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60 |
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MINIMUM |
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50 |
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FOOTPRINT = 0.076 cm2 |
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40 |
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30 |
0 |
2.0 |
4.0 |
6.0 |
8.0 |
10 |
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FOIL AREA (cm2) |
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Figure 2. On-State Characteristics |
Figure 3. Junction to Ambient Thermal |
Resistance versus Copper Tab Area
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110 |
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110 |
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100 |
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α |
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100 |
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(TEMPERATURE°C) |
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30° |
α |
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(TEMPERATURE°C) |
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30° |
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60° |
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ALLOWABLEMAXIMUM |
50 |
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60° |
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ALLOWABLEMAXIMUM |
50 |
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1.0 cm2 FOIL AREA |
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90 |
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90° |
α = CONDUCTION |
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90 |
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80 |
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80 |
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90° |
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dc |
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ANGLE |
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dc |
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70 |
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70 |
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α = 180° |
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α = 180° |
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60 |
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° |
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60 |
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° |
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120 |
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AMBIENT |
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AMBIENT |
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120 |
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T |
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T |
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α |
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, |
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MINIMUM FOOTPRINT |
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, |
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50 OR 60 Hz |
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A |
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40 |
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A |
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40 |
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α |
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50 OR 60 Hz |
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30 |
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30 |
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CONDUCTION |
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20 |
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20 |
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ANGLE |
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0 |
0.1 |
0.2 |
0.3 |
0.4 |
0.5 |
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0 |
0.1 |
0.2 |
0.3 |
0.4 |
0.5 |
0.6 |
0.7 |
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IT(RMS), RMS ON-STATE CURRENT (AMPS) |
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IT(RMS), RMS ON-STATE CURRENT (AMPS) |
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Figure 4. Current Derating, Minimum Pad Size |
Figure 5. Current Derating, 1.0 cm Square Pad |
Reference: Ambient Temperature |
Reference: Ambient Temperature |
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110 |
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110 |
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30° |
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α |
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°C) |
100 |
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30° |
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α |
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105 |
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ALLOWABLE |
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ALLOWABLE |
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dc |
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α = 180° |
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60° |
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T TEMPERATUREAMBIENT( |
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60° |
α = CONDUCTION |
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(TEMPERATURETAB°C) |
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T |
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90 |
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dc |
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90° |
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ANGLE |
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100 |
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MAXIMUM |
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70 |
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α = 180° |
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MAXIMUM |
90 |
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90° |
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80 |
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120° |
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95 |
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120° |
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, |
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, |
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REFERENCE: |
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α |
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A |
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4.0 cm2 FOIL AREA |
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(tab) |
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α |
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60 |
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85 |
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FIGURE 1 |
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α = CONDUCTION |
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50 |
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80 |
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ANGLE |
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0 |
0.1 |
0.2 |
0.3 |
0.4 |
0.5 |
0.6 |
0.7 |
0.8 |
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0 |
0.1 |
0.2 |
0.3 |
0.4 |
0.5 |
0.6 |
0.7 |
0.8 |
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IT(RMS), RMS ON-STATE CURRENT (AMPS) |
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IT(RMS), ON-STATE CURRENT (AMPS) |
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Figure 6. Current Derating, 2.0 cm Square Pad |
Figure 7. Current Derating |
Reference: Ambient Temperature |
Reference: MT2 Tab |
3±42 |
Motorola Thyristor Device Data |
MAC08BT1 Series
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1.0 |
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α |
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1.0 |
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0.9 |
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α |
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RESISTANCE (NORMALIZED) |
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AVERAGE |
POWER DISSIPATION (WATTS) |
0.8 |
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0.7 |
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α = CONDUCTION |
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ANGLE |
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0.6 |
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120° |
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0.5 |
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0.1 |
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30° |
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MAXIMUM, |
0.4 |
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α = 180° |
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60° |
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TRANSIENTTHERMALr(t), |
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0.3 |
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dc |
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90° |
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(AV) |
0.2 |
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P |
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0.1 |
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0 |
0.1 |
0.2 |
0.3 |
0.4 |
0.5 |
0.6 |
0.7 |
0.8 |
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0.01 |
0.001 |
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0 |
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0.0001 |
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IT(RMS), RMS ON-STATE CURRENT (AMPS) |
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0.01 |
0.1 |
1.0 |
10 |
100 |
t, TIME (SECONDS)
Figure 8. Power Dissipation |
Figure 9. |
Thermal |
Response, Device |
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Mounted on |
Figure 1 |
Printed Circuit Board |
75 VRMS, |
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ADJUST FOR |
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TRIGGER |
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CHARGE |
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ITM, 60 Hz VAC |
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CONTROL |
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CHARGE |
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5 μF |
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NON-POLAR |
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CL |
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80mHY LL
TRIGGER CONTROL
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1N4007 |
MEASURE I |
RS 56 |
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± |
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0.047 CS |
200 V |
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ADJUST FOR |
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1N914 |
51 |
dv/dt(c) |
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G |
1 |
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Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
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Figure 10. Simplified Q1 (dv/dt)c Test Circuit |
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10 |
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10 |
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60 Hz |
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60° |
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180 Hz |
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400 Hz |
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dv/dt |
S) |
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dv/dt |
S) |
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300 Hz |
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COMMUTATING |
μ |
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110° |
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COMMUTATING |
μ |
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ITM |
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c |
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c |
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dv/dt |
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100° |
dv/dt |
VDRM = 200 V |
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tw |
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ITM |
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V |
2tw |
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6f |
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1.0 |
(di dt)c |
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1000 |
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1.0 |
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DRM |
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10 |
70 |
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1.0 |
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di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS) |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 11. Typical Commutating dv/dt versus |
Figure 12. Typical Commutating dv/dt versus |
Current Crossing Rate and Junction Temperature |
Junction Temperature at 0.8 Amps RMS |
Motorola Thyristor Device Data |
3±43 |
MAC08BT1 |
Series |
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60 |
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600 V |
10 |
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IGT3 |
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pk |
(mA) |
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TJ = 110°C |
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50 |
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MAIN TERMINAL #2 |
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IGT2 |
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STATIC dv/dt (V/μs) |
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POSITIVE |
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IGT4 |
40 |
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IGT1 |
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1.0 |
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30 |
MAIN TERMINAL #1 |
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POSITIVE |
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2010 |
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100 |
1000 |
10,000 |
0.1 |
±20 |
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0 |
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100 |
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RG, GATE ± MAIN TERMINAL 1 RESISTANCE (OHMS) |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 13. Exponential Static dv/dt versus |
Figure 14. Typical Gate Trigger Current Variation |
Gate ± Main Terminal 1 Resistance
(mA)CURRENTHOLDING |
6.0 |
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1.1 |
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5.0 |
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MAIN TERMINAL #1 |
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(VOLTS)VOLTAGETRIGGER |
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4.0 |
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MAIN TERMINAL #2 |
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VGT3 |
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POSITIVE |
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VGT2 |
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3.0 |
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VGT1 |
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2.0 |
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GATE |
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H |
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POSITIVE |
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, |
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I |
1.0 |
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V |
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0 |
±20 |
0 |
20 |
40 |
60 |
80 |
100 |
0.3 |
±20 |
0 |
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40 |
60 |
80 |
100 |
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±40 |
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TJ, JUNCTION TEMPERATURE (°C) |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 15. Typical Holding Current Variation |
Figure 16. Gate Trigger Voltage Variation |
3±44 |
Motorola Thyristor Device Data |