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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6071/D

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

Sensitive Gate Triggering (A and B versions) Uniquely Compatible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions

Gate Triggering 2 Mode Ð 2N6071, 2N6073, 2N6075

4 Mode Ð 2N6071,A,B, 2N6073,A,B, 2N6075,A,B

Blocking Voltages to 600 Volts

All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability

Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

2N6071,A,B* 2N6073,A,B* 2N6075,A,B*

*Motorola preferred devices

TRIACs

4 AMPERES RMS

200 thru 600 VOLTS

MT1

MT2

G

 

 

MT2

G

CASE 77-08

(TO-225AA)

MT2 MT1

STYLE 5

 

Rating

Symbol

Value

Unit

 

 

 

 

 

*Peak Repetitive Off-State Voltage(1)

 

V

 

Volts

(Gate Open, TJ = 25 to 110°C)

2N6071,A,B

DRM

200

 

 

 

 

2N6073,A,B

 

400

 

 

2N6075,A,B

 

600

 

 

 

 

 

 

*On-State Current RMS (TC = 85°C)

 

IT(RMS)

4

Amps

*Peak Surge Current

 

ITSM

30

Amps

(One Full cycle, 60 Hz, TJ = ±40 to +110°C)

 

 

 

Circuit Fusing Considerations

 

I2t

3.7

A2s

(t = 8.3 ms)

 

 

 

 

 

 

 

 

 

*Peak Gate Power

 

PGM

10

Watts

*Average Gate Power

 

PG(AV)

0.5

Watt

*Peak Gate Voltage

 

VGM

5

Volts

*Indicates JEDEC Registered Data.

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

2N6071,A,B

2N6073,A,B

2N6075,A,B

 

 

 

MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

 

 

Rating

Symbol

Value

Unit

 

 

 

 

*Operating Junction Temperature Range

TJ

±40 to +110

°C

*Storage Temperature Range

 

Tstg

±40 to +150

°C

Mounting Torque (6-32 Screw)(1)

 

Ð

8

in. lb.

*Indicates JEDEC Registered Data.

 

 

 

 

1.Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower

case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common.

For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds. Consult factory for lead bending options.

THERMAL CHARACTERISTICS

 

Characteristic

 

 

Symbol

 

Max

 

 

Unit

 

 

 

 

 

 

 

 

 

 

 

*Thermal Resistance, Junction to Case

 

 

RθJC

3.5

 

 

°C/W

Thermal Resistance, Junction to Ambient

 

 

RθJA

75

 

 

°C/W

*Indicates JEDEC Registered Data.

 

 

 

 

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

 

Min

 

Typ

Max

 

Unit

 

 

 

 

 

 

 

 

 

 

 

*Peak Blocking Current

 

IDRM

 

 

 

 

 

 

 

μA

(VD = Rated VDRM, gate open, TJ = 25°C)

 

 

 

Ð

 

Ð

10

 

(TJ = 110°C)

 

 

 

 

Ð

 

Ð

2

 

mA

*On-State Voltage (Either Direction)

VTM

 

Ð

 

Ð

2

 

Volts

(ITM = 6 A Peak)

 

 

 

 

 

 

 

 

 

 

 

*Peak Gate Trigger Voltage (Continuous dc)

VGT

 

 

 

 

 

 

 

Volts

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = ±40°C)

 

 

 

 

 

 

 

 

 

 

MT2(+), G(+); MT2(±), G(±)

All Types

 

 

 

Ð

 

1.4

2.5

 

 

MT2(+), G(±); MT2(±), G(+)

2N6071,A,B, 2N6073,A,B 2N6075,A,B

 

 

 

Ð

 

1.4

2.5

 

 

(Main Terminal Voltage = Rated VDRM, RL = 10 k ohms,

 

 

 

 

 

 

 

 

 

 

TJ = 110°C)

 

 

 

 

 

 

 

 

 

 

 

MT2(+), G(+); MT2(±), G(±)

All Types

 

 

 

0.2

 

Ð

Ð

 

 

MT2(+), G(±); MT2(±), G(+)

2N6071,A,B, 2N6073,A,B, 2N6075,A,B

 

 

 

0.2

 

Ð

Ð

 

 

 

 

 

 

 

 

 

 

 

 

*Holding Current (Either Direction)

IH

 

 

 

 

 

 

 

mA

(Main Terminal Voltage = 12 Vdc, Gate Open, TJ = ±40°C)

 

 

 

 

 

 

 

 

 

 

(Initiating Current = 1 Adc)

2N6071, 2N6073, 2N6075,

 

 

 

Ð

 

Ð

70

 

 

 

2N6071A,B, 2N6073A,B, 2N6075A,B

 

 

 

Ð

 

Ð

30

 

 

(TJ = 25°C)

2N6071, 2N6073, 2N6075

 

 

 

Ð

 

Ð

30

 

 

 

2N6071A,B, 2N6073A,B, 2N6075A,B

 

 

 

Ð

 

Ð

15

 

 

 

 

 

 

 

 

 

 

 

Turn-On Time (Either Direction)

ton

 

Ð

 

1.5

Ð

 

μs

(ITM = 14 Adc, IGT = 100 mAdc)

 

 

 

 

 

 

 

 

 

 

Blocking Voltage Application Rate at Commutation

dv/dt(c)

 

Ð

 

5

Ð

 

V/μs

@ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A,

 

 

 

 

 

 

 

 

 

 

Commutating di/dt = 2.0 A/ms

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

*Indicates JEDEC Registered Data.

 

 

 

 

 

 

 

 

 

 

2

Motorola Thyristor Device Data

 

 

2N6071,A,B

2N6073,A,B

2N6075,A,B

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

QUADRANT

 

 

 

 

 

 

 

(See Definition Below)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Type

IGT

 

I

 

II

 

III

 

IV

 

 

@ TJ

 

mA

 

mA

 

mA

 

mA

 

 

 

 

 

 

 

 

Gate Trigger Current (Continuous dc)

2N6071

+25°C

 

30

 

Ð

 

30

 

Ð

 

(Main Terminal Voltage = 12 Vdc, RL = 100 ohms)

2N6073

 

 

 

 

 

 

 

 

 

 

±40°C

 

60

 

Ð

 

60

 

Ð

 

 

2N6075

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2N6071A

+25°C

 

5

 

5

 

5

 

10

 

Maximum Value

2N6073A

 

 

 

 

 

 

 

 

 

 

±40°C

 

20

 

20

 

20

 

30

 

 

2N6075A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2N6071B

+25°C

 

3

 

3

 

3

 

5

 

 

2N6073B

 

 

 

 

 

 

 

 

 

 

 

±40°C

 

15

 

15

 

15

 

20

 

 

2N6075B

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

*Indicates JEDEC Registered Data.

SAMPLE APPLICATION:

TTL-SENSITIVE GATE 4 AMPERE TRIAC

TRIGGERS IN MODES II AND III

0 V

14

 

 

MC7400

 

 

 

 

LOAD

 

4

 

 

510

2N6071A

 

7

115 VAC

±VEE

Ω

 

VEE = 5.0 V

 

60 Hz

 

+

 

 

QUADRANT DEFINITIONS

 

 

MT2(+)

 

QUADRANT II

 

QUADRANT I

 

 

MT2(+), G(±)

 

MT2(+), G(+)

G(±)

 

 

 

G(+)

 

 

 

QUADRANT III

 

QUADRANT IV

 

MT2(±), G(±)

 

MT2(±), G(+)

 

 

 

 

 

 

 

MT2(±)

Trigger devices are recommended for gating on Triacs. They provide:

1.Consistent predictable turn-on points.

2.Simplified circuitry.

3.Fast turn-on time for cooler, more efficient and reliable operation.

For 2N6071, 2N6073, 2N6075

ELECTRICAL CHARACTERISTICS of RECOMMENDED

BIDIRECTIONAL SWITCHES

Usage

General

 

Lamp Dimmer

 

 

 

 

Part Number

MBS4991

MBS4993

MBS100

 

 

 

 

 

VS

6.0 ± 10 V

7.5

± 9.0 V

3.0 ± 5.0 V

IS

350 μA Max

250

μA Max

100 ± 400 μA

VS1 ± VS2

0.5 V Max

0.2 V Max

0.35 V Max

Temperature

 

0.02%/°C Typ

 

Coefficient

 

 

 

 

 

 

SENSITIVE GATE LOGIC REFERENCE

IC Logic

 

Firing Quadrant

 

 

 

 

 

Functions

I

II

III

IV

 

 

 

 

 

 

TTL

 

2N6071A

2N6071A

 

 

 

Series

Series

 

 

 

 

 

 

HTL

 

2N6071A

2N6071A

 

 

 

Series

Series

 

 

 

 

 

 

CMOS (NAND)

2N6071B

 

 

2N6071B

 

Series

 

 

Series

 

 

 

 

 

CMOS (Buffer)

 

2N6071B

2N6071B

 

 

 

Series

Series

 

 

 

 

 

 

Operational

2N6071A

 

 

2N6071A

Amplifier

Series

 

 

Series

 

 

 

 

 

Zero Voltage

 

2N6071A

2N6071A

 

Switch

 

Series

Series

 

 

 

 

 

 

Motorola Thyristor Device Data

3

2N6071,A,B 2N6073,A,B 2N6075,A,B

FIGURE 1 ± AVERAGE CURRENT DERATING

FIGURE 2 ± RMS CURRENT DERATING

 

110

 

 

 

 

 

 

110

(°C)

100

 

 

 

 

 

(°C)

100

TEMPERATURE

 

 

 

 

 

TEMPERATURE

 

 

α = 30°

60°

 

 

 

 

 

 

90°

 

 

90

 

 

 

 

90

 

 

 

 

120°

 

 

 

 

 

 

180°

 

 

CASE

 

 

 

 

dc

CASE

 

 

 

 

 

 

 

 

 

α

 

 

 

 

,

80

 

 

 

 

 

,

80

C

 

 

 

 

 

C

T

 

 

α

 

 

 

T

 

 

 

 

 

 

 

 

 

 

70

α = CONDUCTION ANGLE

 

3.0

 

 

70

 

 

0

1.0

2.0

4.0

 

 

 

 

 

IT(AV), AVERAGE ON-STATE CURRENT (AMP)

 

 

 

 

 

 

α = 30°

 

 

 

 

60°

 

 

 

 

 

90°

 

 

 

120°

 

 

 

 

180°

 

 

α

 

 

dc

 

α

 

 

 

α = CONDUCTION ANGLE

 

 

 

0

1.0

2.0

3.0

4.0

 

IT(RMS), RMS ON-STATE CURRENT (AMP)

 

FIGURE 3 ± POWER DISSIPATION

FIGURE 4 ± POWER DISSIPATION

 

8.0

 

 

 

 

 

8.0

 

 

α

 

 

 

 

 

(WATTS)

 

α

 

 

180°

(WATTS)

 

6.0

 

120°

dc

 

 

 

6.0

α = CONDUCTION ANGLE

 

90°

 

 

POWER

 

 

POWER

 

 

 

60°

 

 

 

4.0

 

 

 

 

4.0

, AVERAGE

α = 30°

 

 

 

, AVERAGE

 

 

 

 

 

2.0

 

 

 

 

2.0

(AV)

 

 

 

 

(AV)

 

 

 

 

 

 

P

 

 

 

 

 

P

 

 

0

 

 

 

 

 

0

 

0

1.0

2.0

3.0

 

4.0

 

IT(AV), AVERAGE ON-STATE CURRENT (AMP)

 

α

 

 

dc

 

 

 

 

 

α

 

 

 

α = CONDUCTION ANGLE

 

α = 180°

 

 

 

 

 

 

 

120°

 

 

 

 

60°

30°

 

 

 

 

 

 

 

90°

 

0

1.0

2.0

3.0

4.0

 

IT(RMS), RMS ON-STATE CURRENT (AMP)

 

VGTM, GATE TRIGGER VOLTAGE (NORMALIZED)

FIGURE 5 ± TYPICAL GATE-TRIGGER VOLTAGE

3.0

OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

2.0

1.0

0.7

0.5

0.3

 

 

 

 

 

 

 

 

 

 

±60

±40

±20

0

20

40

60

80

100

120

140

TJ, JUNCTION TEMPERATURE (°C)

I GTM , GATE TRIGGER CURRENT (NORMALIZED)

FIGURE 6 ± TYPICAL GATE-TRIGGER CURRENT

3.0

OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

2.0

1.0

0.7

0.5

0.3

±60

±40

±20

0

20

40

60

80

100

120

140

 

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

 

 

4

Motorola Thyristor Device Data

2N6071,A,B 2N6073,A,B 2N6075,A,B

FIGURE 7 ± MAXIMUM ON-STATE CHARACTERISTICS

FIGURE 8 ± TYPICAL HOLDING CURRENT

 

40

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GATE OPEN

 

 

 

 

30

 

 

 

 

 

(NORMALIZED)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

APPLIES TO EITHER DIRECTION

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

1.0

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, HOLDING

 

 

 

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

(AMP)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

H

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

 

°

 

 

 

 

 

0.3

±40

±20

0

20

40

60

80

100

120

140

 

 

 

 

 

 

±60

3.0

TJ = 110 C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, ON-STATE

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

T

 

= 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TM

 

J

 

 

FIGURE 9 ± MAXIMUM ALLOWABLE SURGE CURRENT

I

 

 

 

 

 

 

1.0

 

 

 

 

 

 

34

 

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

32

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(AMP)

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

CURRENT

28

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

26

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

24

 

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

SINEWAVE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = ±40 to +110°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

22

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

f = 60 Hz

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PEAK

18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

16

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

14

 

 

 

 

 

 

 

 

 

 

 

0

1.0

 

2.0

3.0

4.0

5.0

1.0

 

 

2.0

 

3.0

4.0

5.0

7.0

 

10

 

 

VTM, ON-STATE VOLTAGE (VOLTS)

 

 

 

 

 

NUMBER OF FULL CYCLES

 

 

 

(°C/W)

 

 

 

 

 

FIGURE 10 ± THERMAL RESPONSE

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IMPEDANCE

5.0

 

 

 

 

 

 

 

 

 

 

 

 

MAXIMUM

 

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

 

TYPICAL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,TRANSIENT

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

θJC(t)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Z

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

1.0 k

2.0 k

5.0 k

10 k

 

t, TIME (ms)

Motorola Thyristor Device Data

5

2N6071,A,B 2N6073,A,B 2N6075,A,B

PACKAGE DIMENSIONS

±B±

F

 

U

 

C

Q

 

 

M

 

 

±A±

 

 

 

1

2

3

 

H

 

K

 

 

 

 

V

 

J

G

 

 

R

S

0.25 (0.010) M

A

M B M

D 2 PL

 

 

 

0.25 (0.010) M A M

B

M

STYLE 5:

PIN 1. MT 1

2.MT 2

3.GATE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.425

0.435

10.80

11.04

B

0.295

0.305

7.50

7.74

C

0.095

0.105

2.42

2.66

D

0.020

0.026

0.51

0.66

F

0.115

0.130

2.93

3.30

G

0.094 BSC

2.39 BSC

H

0.050

0.095

1.27

2.41

J

0.015

0.025

0.39

0.63

K

0.575

0.655

14.61

16.63

M

5

TYP

5

TYP

Q

0.148

0.158

3.76

4.01

R

0.045

0.055

1.15

1.39

S

0.025

0.035

0.64

0.88

U

0.145

0.155

3.69

3.93

V

0.040

±±±

1.02

±±±

CASE 77±08 (TO±225AA)

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

2N6071/D

*2N6071/D*

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