MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCR25/D
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half±wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half±wave, silicon gate±controlled devices are needed.
•Blocking Voltage to 800 Volts
•On-State Current Rating of 25 Amperes RMS
•High Surge Current Capability Ð 300 Amperes
•Industry Standard TO±220AB Package for Ease of Design
•Glass Passivated Junctions for Reliability and Uniformity
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
MCR25
SERIES*
*Motorola preferred devices
SCRs
25 AMPERES RMS
400 thru 800 VOLTS
A
K
A
G
CASE 221A±06 (TO-220AB)
Style 3
Parameter |
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Symbol |
Value |
Unit |
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Peak Repetitive Off-State Voltage (1) |
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VDRM |
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Volts |
Peak Repetitive Reverse Voltage |
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VRRM |
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(TJ = ±40 to 125°C) |
MCR25D |
|
400 |
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MCR25M |
|
600 |
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MCR25N |
|
800 |
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On-State RMS Current |
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IT(RMS) |
25 |
A |
(All Conduction Angles) |
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Peak Non-repetitive Surge Current |
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ITSM |
300 |
A |
(One Half Cycle, 60 Hz, TJ = 125°C) |
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Circuit Fusing Consideration (t = 8.3 ms) |
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I2t |
373 |
A2sec |
Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) |
|
PGM |
20.0 |
Watts |
Average Gate Power (t = 8.3 ms, TC = 80°C) |
|
PG(AV) |
0.5 |
Watts |
Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 80°C) |
|
IGM |
2.0 |
A |
Operating Junction Temperature Range |
|
TJ |
± 40 to +125 |
°C |
Storage Temperature Range |
|
Tstg |
± 40 to +150 |
°C |
THERMAL CHARACTERISTICS |
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Thermal Resistance Ð Junction to Case |
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RqJC |
1.5 |
°C/W |
Ð Junction to Ambient |
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RqJA |
62.5 |
|
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds |
TL |
260 |
°C |
|
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola, Inc. 1995
MCR25 SERIES
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS
Peak Forward Blocking Current |
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IDRM |
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mA |
Peak Reverse Blocking Current |
TJ = 25°C |
IRRM |
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(VAK = Rated VDRM or VRRM, Gate Open) |
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Ð |
Ð |
0.01 |
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TJ = 125°C |
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Ð |
Ð |
2.0 |
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ON CHARACTERISTICS |
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Peak On-State Voltage* (ITM = 50 A) |
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VTM |
Ð |
Ð |
1.8 |
Volts |
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) |
|
IGT |
4.0 |
10 |
30 |
mA |
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) |
|
VGT |
0.5 |
0.65 |
1.0 |
Volts |
Hold Current (Anode Voltage =12 V) |
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IH |
5.0 |
25 |
40 |
mA |
DYNAMIC CHARACTERISTICS |
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Critical Rate of Rise of Off±State Voltage |
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dv/dt |
50 |
200 |
Ð |
V/μs |
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) |
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*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. |
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°(C) |
125 |
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TEMPERATURE |
120 |
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115 |
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110 |
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CASE |
105 |
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= Conduction |
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Angle |
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ALLOWABLE |
100 |
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95 |
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MAXIMUM |
90 |
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85 |
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= 30° |
60 ° |
90° |
120° |
180° |
dc |
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, |
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C |
80 |
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T |
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75 |
5 |
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10 |
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15 |
20 |
25 |
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0 |
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IT(AV), AVERAGE ON±STATE CURRENT (AMPS) |
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35 |
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(WATTS) |
30 |
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dc |
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180° |
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DISSIPATION |
25 |
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120° |
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90° |
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20 |
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60 ° |
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POWER |
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= 30° |
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15 |
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, AVERAGE |
10 |
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(AV) |
5 |
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P |
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0 |
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25 |
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0 |
5 |
10 |
15 |
20 |
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IT(AV), AVERAGE ON±STATE CURRENT (AMPS) |
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Figure 1. Average Current Derating |
Figure 2. Maximum On±State Power Dissipation |
2 |
Motorola Thyristor Device Data |
CURRENTSTATE-ON (AMPS) |
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MCR25 |
SERIES |
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100 |
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1 |
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(NORMALIZED)RTHERMAL |
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Maximum @ T = 125°C |
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J |
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10 |
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Typical @ TJ = 25°C |
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0.1 |
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ZqJC(t) + RqJC @ R(t) |
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Maximum @ T = 25°C |
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INSTANTANOUS |
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J |
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R |
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1 |
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TRANSIENT |
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(t) |
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, |
0.1 |
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0.01 |
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I |
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T |
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1@104 |
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0.4 |
0.6 |
0.8 |
1 |
1.2 |
1.4 |
1.6 |
1.8 |
2 |
2.2 |
2.4 |
2.6 |
2.8 |
0.1 |
1 |
10 |
100 |
1000 |
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VT, INSTANTANEOUS ON±STATE VOLTAGE (VOLTS) |
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t, TIME (ms) |
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Figure 3. On±State Characteristics |
Figure 4. Transient Thermal Response |
IH, HOLDING CURRENT (mA)
100 |
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100 |
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(mA) |
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10 |
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CURRENTLATCHING |
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L |
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I |
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1 |
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10 |
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±40 |
±25 |
±10 |
5 |
20 |
35 |
50 |
65 |
80 |
95 |
110 |
125 |
±40 |
±25 |
±10 |
5 |
20 |
35 |
50 |
65 |
80 |
95 |
110 |
125 |
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TJ, JUNCTION TEMPERATURE (°C) |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 5. Typical Holding Current Versus |
Figure 6. Typical Latching Current Versus |
Junction Temperature |
Junction Temperature |
100
CURRENT (mA) |
10 |
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TRIGGER |
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, |
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GT |
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I |
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1 |
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±40 |
±25 |
±10 |
5 |
20 |
35 |
50 |
65 |
80 |
95 |
110 |
125 |
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TJ, JUNCTION TEMPERATURE (°C) |
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VGT, GATE TRIGGER VOLTAGE (VOLTS)
0.85
0.8
0.75
0.7
0.65
0.6
0.55
0.5
0.45
0.4
±40 |
±25 |
±10 |
5 |
20 |
35 |
50 |
65 |
80 |
95 |
110 |
125 |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 7. Typical Gate Trigger Current Versus |
Figure 8. Typical Gate Trigger Voltage Versus |
Junction Temperature |
Junction Temperature |
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Motorola Thyristor Device Data |
3 |
MCR25 |
SERIES |
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1200 |
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2500 |
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1000 |
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Gate±Cathode Open, |
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(dv/dt does not depend on RGK) |
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2000 |
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STATIC dv/dt (V/us) |
800 |
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STATIC dv/dt (V/us) |
1500 |
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600 |
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85°C |
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100°C |
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110°C |
1000 |
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400 |
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TJ = 125°C |
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200 |
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500 |
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0 |
300 |
400 |
500 |
600 |
700 |
800 |
0 |
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200 |
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VPK , Peak Voltage |
(Volts) |
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Gate Cathode Open, |
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(dv/dt does not depend on RGK ) |
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VPK = 275 |
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VPK = 600 |
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VPK = 400 |
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VPK = 800 |
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80 |
85 |
90 |
95 |
100 |
105 |
110 |
115 |
120 |
125 |
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TJ, Junction Temperature (°C ) |
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Figure 9. Typical Exponential Static dv/dt |
Figure 10. Typical Exponential Static dv/dt |
Versus Peak Voltage. |
Versus Junction Temperature. |
I TSM, SURGE CURRENT (AMPS)
300
1 CYCLE
280
260
240
220
200 |
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TJ=125° C |
f=60 Hz |
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180 |
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160 |
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1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
9 |
10 |
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NUMBER OF CYCLES |
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Figure 11. Maximum Non±Repetitive
Surge Current
4 |
Motorola Thyristor Device Data |
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MCR25 |
SERIES |
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PACKAGE DIMENSIONS |
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±T± |
PLANESEATING |
NOTES: |
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1. DIMENSIONING AND TOLERANCING PER ANSI |
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C |
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Y14.5M, 1982. |
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B |
F |
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2. |
CONTROLLING DIMENSION: INCH. |
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T |
S |
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3. DIMENSION Z DEFINES A ZONE WHERE ALL |
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BODY AND LEAD IRREGULARITIES ARE |
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4 |
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ALLOWED. |
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INCHES |
MILLIMETERS |
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Q |
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A |
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DIM |
MIN |
MAX |
MIN |
MAX |
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A |
0.570 |
0.620 |
14.48 |
15.75 |
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1 |
2 |
3 |
U |
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B |
0.380 |
0.405 |
9.66 |
10.28 |
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C |
0.160 |
0.190 |
4.07 |
4.82 |
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H |
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D |
0.025 |
0.035 |
0.64 |
0.88 |
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K |
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STYLE 3: |
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F |
0.142 |
0.147 |
3.61 |
3.73 |
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G |
0.095 |
0.105 |
2.42 |
2.66 |
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Z |
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PIN 1. |
CATHODE |
H |
0.110 |
0.155 |
2.80 |
3.93 |
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2. |
ANODE |
J |
0.018 |
0.025 |
0.46 |
0.64 |
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3. |
GATE |
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K |
0.500 |
0.562 |
12.70 |
14.27 |
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4. |
ANODE |
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L |
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R |
L |
0.045 |
0.060 |
1.15 |
1.52 |
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N |
0.190 |
0.210 |
4.83 |
5.33 |
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V |
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J |
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Q |
0.100 |
0.120 |
2.54 |
3.04 |
G |
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R |
0.080 |
0.110 |
2.04 |
2.79 |
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S |
0.045 |
0.055 |
1.15 |
1.39 |
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D |
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T |
0.235 |
0.255 |
5.97 |
6.47 |
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CASE 221A±06 |
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U |
0.000 |
0.050 |
0.00 |
1.27 |
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N |
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V |
0.045 |
±±± |
1.15 |
±±± |
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(TO-220AB) |
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Z |
±±± |
0.080 |
±±± |
2.04 |
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Motorola Thyristor Device Data |
5 |
MCR25 SERIES
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◊ MCR25/D
*MCR25/D*