MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MAC4DSM/D
TRIACS |
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MAC4DSM |
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MAC4DSN |
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Silicon Bidirectional Thyristors |
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Motorola Preferred Devices |
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Designed for high volume, low cost, industrial and consumer applications |
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such as motor control; process control; temperature, light and speed control. |
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• Small Size Surface Mount DPAK Package |
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TRIACS |
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• Passivated Die for Reliability and Uniformity |
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4.0 AMPERES RMS |
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• Blocking Voltage to 800 V |
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MT2 |
600 thru 800 VOLTS |
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• On±State Current Rating of 4.0 Amperes RMS at 108°C |
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• Low IGT Ð 10 mA Maximum in 3 Quadrants |
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• High Immunity to dv/dt Ð 50 V/ ms at 125°C |
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ORDERING INFORMATION |
G |
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MT2 |
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• To Obtain ªDPAKº in Surface Mount Leadform (Case 369A) |
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MT1 |
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Shipped in Sleeves Ð No Suffix, i.e. MAC4DSN |
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MT1 |
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G |
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Shipped in 16 mm Tape and Reel Ð Add ªT4º Suffix to Device Number, |
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MT2 |
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i.e. MAC4DSNT4 |
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CASE 369A±13 |
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• To Obtain ªDPAKº in Straight Lead Version (Case 369) Shipped in Sleeves Ð |
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STYLE 6 |
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Add ª±1º Suffix to Device Number, i.e. MAC4DSN±1 |
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating |
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Symbol |
Value |
Unit |
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Peak Repetitive Off±State Voltage (1) |
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V |
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Volts |
(TJ = ±40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) |
MAC4DSM |
DRM |
600 |
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MAC4DSN |
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800 |
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On±State RMS Current |
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IT(RMS) |
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Amps |
(Full Cycle Sine Wave, 60 Hz, TC = 108°C) |
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4.0 |
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Peak Non±Repetitive Surge Current |
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ITSM |
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(One Full Cycle, 60 Hz, TJ = 125°C) |
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40 |
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Circuit Fusing Consideration (t = 8.3 msec) |
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I2t |
6.6 |
A2sec |
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Peak Gate Power |
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PGM |
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Watts |
(Pulse Width ≤ 10 msec, TC = 108°C) |
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0.5 |
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Average Gate Power |
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PG(AV) |
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(t = 8.3 msec, TC = 108°C) |
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0.1 |
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Peak Gate Current (Pulse Width ≤ 10 |
sec,m |
TC = 108°C) |
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IGM |
0.2 |
Amps |
Peak Gate Voltage (Pulse Width ≤ 10 |
sec,m |
TC = 108°C) |
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VGM |
5.0 |
Volts |
Operating Junction Temperature Range |
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TJ |
±40 to 125 |
°C |
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Storage Temperature Range |
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Tstg |
±40 to 150 |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance Ð Junction to Case |
RqJC |
3.5 |
°C/W |
Ð Junction to Ambient |
RqJA |
88 |
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Ð Junction to Ambient (2) |
RqJA |
80 |
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Maximum Lead Temperature for Soldering Purposes (3) |
T |
260 |
°C |
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L |
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(1)VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded.
(2)Surface mounted on minimum recommended pad size.
(3)1/8″ from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
Motorola, Inc. 1997
MAC4DSM MAC4DSN
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristics |
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Symbol |
Min |
Typ |
Max |
Unit |
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Peak Repetitive Blocking Current |
TJ = 25°C |
IDRM |
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mA |
(VD = Rated VDRM, Gate Open) |
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Ð |
Ð |
0.01 |
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TJ = 125°C |
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Ð |
Ð |
2.0 |
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Peak On±State Voltage (1) |
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V |
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Volts |
(ITM = ± 6.0 A) |
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TM |
Ð |
1.3 |
1.6 |
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Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) |
IGT |
2.9 |
4.0 |
10 |
mA |
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MT2(+), G(+) |
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MT2(+), G(±) |
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2.9 |
5.0 |
10 |
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MT2(±), G(±) |
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2.9 |
7.0 |
10 |
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Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) |
VGT |
0.5 |
0.7 |
1.3 |
Volts |
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MT2(+), G(+) |
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MT2(+), G(±) |
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0.5 |
0.65 |
1.3 |
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MT2(±), G(±) |
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0.5 |
0.7 |
1.3 |
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MT2(+), G(+); MT2(+), G(±); MT2(±), G(±) |
TJ = 125°C |
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0.2 |
0.4 |
Ð |
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Holding Current |
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IH |
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mA |
(VD = 12 V, Gate Open, IT = ± 200 mA) |
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2.0 |
5.5 |
15 |
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Latching Current (VD = 12 V, IG = 10 mA) |
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IL |
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mA |
MT2(+), G(+) |
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Ð |
6.0 |
30 |
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MT2(+), G(±) |
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Ð |
10 |
30 |
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MT2(±), G(±) |
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Ð |
6.0 |
30 |
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DYNAMIC CHARACTERISTICS |
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Characteristics |
Symbol |
Min |
Typ |
Max |
Unit |
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Rate of Change of Commutating Current (1) |
di/dt(c) |
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A/ms |
(VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V/msec, Gate Open, |
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3.0 |
4.0 |
Ð |
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TJ = 125°C, f = 500 Hz, CL = 5.0 mF, LL = 20 mH, No Snubber) |
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See Figure 15 |
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Critical Rate of Rise of Off±State Voltage |
dv/dt |
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V/ms |
(VD = 0.67 X Rated VDRM, Exponential Waveform, |
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50 |
175 |
Ð |
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Gate Open, TJ = 125°C) |
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(1) Pulse test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. |
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2 |
Motorola Thyristor Device Data |
°C) |
125 |
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( |
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TEMPERATURE |
120 |
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a = 30° |
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60° |
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90° |
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CASE |
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115 |
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ALLOWABLE |
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α |
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α |
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110 |
a = CONDUCTION ANGLE |
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120° |
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MAXIMUM |
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180° |
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dc |
105 |
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0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
3.0 |
3.5 |
4.0 |
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, |
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C |
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IT(RMS), RMS ON±STATE CURRENT (AMPS) |
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T |
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MAC4DSM |
MAC4DSN |
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(WATTS) |
6.0 |
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dc |
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° |
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180 |
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5.0 |
α |
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DISSIPATION |
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120° |
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α |
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90° |
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4.0 |
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a = CONDUCTION ANGLE |
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POWER |
3.0 |
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2.0 |
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, AVERAGE |
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60° |
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a = 30° |
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1.0 |
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(AV) |
0 |
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P |
1.0 |
2.0 |
3.0 |
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4.0 |
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0 |
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IT(RMS), RMS ON±STATE CURRENT (AMPS) |
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Figure 1. RMS Current Derating |
Figure 2. On±State Power Dissipation |
CURRENT(AMPS) |
100 |
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(NORMALIZED) |
1.0 |
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TYPICAL @ TJ = 25°C |
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10 |
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MAXIMUM @ TJ = 125°C |
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ON±STATE |
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RESISTANCE |
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0.1 |
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1.0 |
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MAXIMUM @ TJ = 25°C |
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INSTANTANEOUS, |
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, TRANSIENT |
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0.1 |
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(t) |
0.01 |
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r |
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T |
0 |
1.0 |
2.0 |
3.0 |
4.0 |
5.0 |
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I |
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VT, INSTANTANEOUS ON±STATE VOLTAGE (VOLTS) |
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ZqJC(t) = RqJC(t)Sr(t) |
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0.1 |
1.0 |
10 |
100 |
1000 |
10 k |
t, TIME (ms)
Figure 3. On±State Characteristics |
Figure 4. Transient Thermal Response |
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18 |
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Q3 |
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1.0 |
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16 |
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GATE TRIGGER VOLTAGE(VOLTS) |
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, GATE TRIGGER CURRENT (mA) |
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14 |
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0.8 |
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12 |
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10 |
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Q2 |
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0.6 |
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8.0 |
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6.0 |
Q1 |
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4.0 |
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0.4 |
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GT |
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, |
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I |
2.0 |
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GT |
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V |
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0 |
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0.2 |
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±50 |
±25 |
0 |
25 |
50 |
75 |
100 |
125 |
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TJ, JUNCTION TEMPERATURE (°C) |
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Q3 |
Q1 |
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Q2 |
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±50 |
±25 |
0 |
25 |
50 |
75 |
100 |
125 |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 5. Typical Gate Trigger Current versus |
Figure 6. Typical Gate Trigger Voltage versus |
Junction Temperature |
Junction Temperature |
Motorola Thyristor Device Data |
3 |
MAC4DSM |
MAC4DSN |
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14 |
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25 |
(mA) |
12 |
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(mA) |
20 |
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10 |
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CURRENT |
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CURRENT |
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MT2 NEGATIVE |
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15 |
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8.0 |
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, HOLDING |
6.0 |
MT2 POSITIVE |
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LATCHING |
10 |
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4.0 |
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H |
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, |
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L |
5.0 |
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I |
2.0 |
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I |
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0 |
±50 |
±25 |
0 |
25 |
50 |
75 |
100 |
125 |
0 |
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TJ, JUNCTION TEMPERATURE (°C) |
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Q2 |
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Q1 |
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Q3 |
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±50 |
±25 |
0 |
25 |
50 |
75 |
100 |
125 |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 7. Typical Holding Current versus |
Figure 8. Typical Latching Current versus |
Junction Temperature |
Junction Temperature |
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1000 |
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1200 |
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TJ = 125°C |
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1000 |
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800 |
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s) |
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s) |
800 |
(V/ |
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(V/ |
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600 |
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dv/dt |
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dv/dt |
600 |
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STATIC |
400 |
VPK = 400 V |
STATIC |
400 |
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600 V |
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200 |
800 V |
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200 |
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0 |
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0 |
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100 |
1000 |
10 k |
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RGK, GATE±MT1 RESISTANCE (OHMS) |
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TJ = 125°C |
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VPK = 400 V |
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600 V |
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800 V |
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100 |
1000 |
10 k |
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RGK, GATE±MT1 RESISTANCE (OHMS) |
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Figure 9. Exponential Static dv/dt versus |
Figure 10. Exponential Static dv/dt versus |
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Gate±MT1 Resistance, MT2(+) |
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800 |
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2000 |
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600 |
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GATE OPEN |
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1600 |
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s) |
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s) |
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(V/ |
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TJ = 100°C |
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(V/ |
1200 |
dv/dt |
400 |
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dv/dt |
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110°C |
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STATIC |
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STATIC |
800 |
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125°C |
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200 |
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400 |
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0 |
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700 |
800 |
0 |
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400 |
500 |
600 |
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VPK, PEAK VOLTAGE (VOLTS) |
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Gate±MT1 Resistance, MT2(±) |
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GATE OPEN |
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TJ = 100°C |
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110°C |
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125°C |
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400 |
500 |
600 |
700 |
800 |
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VPK, PEAK VOLTAGE (VOLTS) |
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|
Figure 11. Exponential Static dv/dt versus |
Figure 12. Exponential Static dv/dt versus |
Peak Voltage, MT2(+) |
Peak Voltage, MT2(±) |
4 |
Motorola Thyristor Device Data |
|
800 |
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1600 |
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GATE OPEN |
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1400 |
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600 |
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VPK = 400 V |
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1200 |
s) |
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s) |
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m |
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m |
1000 |
(V/ |
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(V/ |
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dv/dt |
400 |
600 V |
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dv/dt |
800 |
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STATIC |
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STATIC |
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600 |
||
200 |
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400 |
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800 V |
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200 |
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0 |
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0 |
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100 |
105 |
110 |
115 |
120 |
125 |
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TJ, JUNCTION TEMPERATURE (°C) |
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MAC4DSM |
MAC4DSN |
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GATE OPEN |
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VPK = 400 V |
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600 V |
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800 V |
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100 |
105 |
110 |
115 |
120 |
125 |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 13. Typical Exponential Static dv/dt |
Figure 14. Typical Exponential Static dv/dt |
versus Junction Temperature, MT2(+) |
versus Junction Temperature, MT2(±) |
OF |
s) |
RATE OF RISE |
m |
VOLTAGE (V/ |
|
dv/dt(c), CRITICAL |
COMMUTATING |
100 |
|
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VPK = 400 V |
T |
J |
= 125°C |
° |
75°C |
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100 C |
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10 |
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1 |
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tw |
f = |
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2 tw |
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6f ITM |
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(di/dt)c = |
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VDRM |
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1000 |
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1.0 |
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0 |
5.0 |
10 |
15 |
20 |
|
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) |
|
||
Figure 15. Critical Rate of Rise of
Commutating Voltage
Motorola Thyristor Device Data |
5 |
MAC4DSM |
MAC4DSN |
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LL |
|
1N4007 |
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200 VRMS |
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ADJUST FOR |
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MEASURE |
|||
ITM, 60 Hz VAC |
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I |
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TRIGGER |
CHARGE |
CONTROL |
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± |
|
CONTROL |
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|||
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CHARGE |
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400 V |
||
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+ |
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2 |
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TRIGGER |
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NON-POLAR |
1N914 |
51 |
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1 |
||
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CL |
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G |
||
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||
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
6 |
Motorola Thyristor Device Data |
MAC4DSM MAC4DSN
PACKAGE DIMENSIONS
±T± SEATINGPLANE
|
B |
C |
V |
R |
E |
|
4 |
|
Z |
|
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S |
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A |
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|
1 |
2 |
3 |
U |
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K |
F |
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J |
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L |
H |
|
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|
D 2 PL
G |
0.13 (0.005) M T |
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.235 |
0.250 |
5.97 |
6.35 |
B |
0.250 |
0.265 |
6.35 |
6.73 |
C |
0.086 |
0.094 |
2.19 |
2.38 |
D |
0.027 |
0.035 |
0.69 |
0.88 |
E |
0.033 |
0.040 |
0.84 |
1.01 |
F |
0.037 |
0.047 |
0.94 |
1.19 |
G |
0.180 BSC |
4.58 BSC |
||
H |
0.034 |
0.040 |
0.87 |
1.01 |
J |
0.018 |
0.023 |
0.46 |
0.58 |
K |
0.102 |
0.114 |
2.60 |
2.89 |
L |
0.090 BSC |
2.29 BSC |
||
R |
0.175 |
0.215 |
4.45 |
5.46 |
S |
0.020 |
0.050 |
0.51 |
1.27 |
U |
0.020 |
±±± |
0.51 |
±±± |
V |
0.030 |
0.050 |
0.77 |
1.27 |
Z |
0.138 |
±±± |
3.51 |
±±± |
CASE 369A±13
ISSUE Y
STYLE 6:
PIN 1. MT1 2. MT2 3. GATE 4. MT2
Motorola Thyristor Device Data |
7 |
MAC4DSM MAC4DSN
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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8 |
◊ |
Motorola Thyristor Device Data |
|
MAC4DSM/D |