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MAC15FPA

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Triacs

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

•Blocking Voltage to 800 Volts

•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability

•Gate Triggering Guaranteed in Three Modes (MAC15FP Series) or Four Modes (MAC15AFP Series)

MT2 MT1

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

MAC15FP

Series

MAC15AFP

Series

ISOLATED TRIACs

THYRISTORS

15 AMPERES RMS

200 thru 800 VOLTS

CASE 221C-02

STYLE 3

Rating	Symbol	Value	Unit

Repetitive Peak Off-State Voltage(1) (T = ±40 to +125°C,	V		Volts
J	DRM
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC15-4FP, MAC15A4FP		200
MAC15-6FP, MAC15A6FP		400
MAC15-8FP, MAC15A8FP		600
MAC15-10FP, MAC15A10FP		800

On-State RMS Current (T = +80°C)(2)	I	15	Amps
C	T(RMS)
Full Cycle Sine Wave 50 to 60 Hz (TC = +95°C)		12
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C)	ITSM	150	Amps
preceded and followed by rated current

Peak Gate Power (TC = +80°C, Pulse Width = 2 μs)	PGM	20	Watts
Average Gate Power (TC = +80°C, t = 8.3 ms)	PG(AV)	0.5	Watt
Peak Gate Current	IGM	2	Amps
Peak Gate Voltage	VGM	10	Volts
RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%)	V(ISO)	1500	Volts
Operating Junction Temperature	TJ	±40 to +125	°C
Storage Temperature Range	Tstg	±40 to +150	°C

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

2.The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.

Motorola Thyristor Device Data

3±63

MAC15FP Series MAC15AFP Series

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	2	°C/W
Thermal Resistance, Case to Sink	RθCS	2.2 (typ)	°C/W
Thermal Resistance, Junction to Ambient	RθJA	60	°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic	Symbol	Min	Typ	Max	Unit

Peak Blocking Current (Either Direction) TJ = 25°C	IDRM	Ð	Ð	10	μA
(VD = Rated VDRM, TJ = 125°C, Gate Open)		Ð	Ð	2	mA
Peak On-State Voltage (Either Direction)	VTM	Ð	1.3	1.6	Volts
(ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)	IGT				mA
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)		Ð	Ð	50
MT2(+), G(±)		Ð	Ð	50
MT2(±), G(±)		Ð	Ð	50
MT2(±), G(+) ªAº SUFFIX ONLY		Ð	Ð	75

Gate Trigger Voltage (Continuous dc)	VGT				Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)		Ð	0.9	2
MT2(+), G(±)		Ð	0.9	2
MT2(±), G(±)		Ð	1.1	2
MT2(±), G(+) ªAº SUFFIX ONLY		Ð	1.4	2.5
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +110°C)
MT2(+), G(+); MT2(±), G(±); MT2(+), G(±)		0.2	Ð	Ð
MT2(±), G(+) ªAº SUFFIX ONLY		0.2	Ð	Ð

Holding Current (Either Direction)	IH	Ð	6	40	mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)

Turn-On Time	tgt	Ð	1.5	Ð	μs
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1 μs, Pulse Width = 2 μs)

Critical Rate of Rise of Commutation Voltage	dv/dt(c)	Ð	5	Ð	V/μs
(VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms,
Gate Unenergized, TC = 80°C)

QUADRANT DEFINITIONS

		MT2(+)
QUADRANT II			QUADRANT I
MT2(+), G(±)			MT2(+), G(+)
G(±)				G(+)

QUADRANT III			QUADRANT IV
	MT2(±), G(±)		MT2(±), G(+)

		MT2(±)

Trigger devices are recommended for gating on Triacs. They provide:

1.Consistent predictable turn-on points.

2.Simplified circuitry.

3.Fast turn-on time for cooler, more efficient and reliable operation.

ELECTRICAL CHARACTERISTICS of RECOMMENDED

BIDIRECTIONAL SWITCHES

Usage	General

Part Number	MBS4991	MBS4992

VS	6±10 V	7.5±9 V
IS	350 μA Max	120 μA Max
VS1±VS2	0.5 V Max	0.2 V Max
Temperature	0.02%/°C Typ
Coefficient	0.02%/°C Typ
Coefficient

1.Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage.

3±64	Motorola Thyristor Device Data

MAC15FP Series MAC15AFP Series

								TYPICAL CHARACTERISTICS
	130									TRIGGER CURRENT (NORMALIZED)	3					OFF-STATE VOLTAGE = 12 Vdc
																OFF-STATE VOLTAGE = 12 Vdc
							30°				2							ALL MODES
C)	120						30°

							60°
°
CASE TEMPERATURE (
	110						90°
	110			125°C
				125°C							1
											1
	100			150° to 180°
	100										0.7
							dc				0.7
				α			dc
				α
											0.5
,	90									GATE
C			α
C
T


		α = CONDUCTION ANGLE								,
										,
	80									GTM	0.3
	80									GTM	0.3
	0	2	4	6	8	10	12	14	16	I	±60	±40	±20	0	20	40	60	80	100	120	140
	0	2	4	6	8	10	12	14	16		±60	±40	±20	0	20	40	60	80	100	120	140
			IT(RMS), RMS ON-STATE CURRENT (AMP)											TJ, JUNCTION TEMPERATURE (°C)

Figure 1. RMS Current Derating

Figure 4. Typical Gate Trigger Current

(WATTS)	20					α = 180°
	20
DISSIPATION
DISSIPATION	12								60°
	16	TJ	= 125°C						120°
						dc			90°
									90°
POWER			α
POWER		α							30°
		α							30°
AVERAGE,	8	α = CONDUCTION ANGLE
AVERAGE,	4
	4
D(AV)	0
P	0	2	4	6	8	10	12	14	16
	0	2	4	6	8	10	12	14	16
			IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 2. On-State Power Dissipation

(NORMALIZED)	3
	3				OFF-STATE VOLTAGE = 12 Vdc
					OFF-STATE VOLTAGE = 12 Vdc
	2					ALL MODES
VOLTAGE

	1

TRIGGER
	0.7


GATE,
	0.5

GTM
	0.3
	0.3
V	±60	±40	±20	0	20	40	60	80	100	120	140
	±60	±40	±20	0	20	40	60	80	100	120	140

TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Voltage

	100
	70
	50		TJ = 25°C
			TJ = 25°C
	30					125°C
	30
	20
(AMP)	10
CURRENT	7
	7
FORWARD	5
FORWARD	3
	3
INSTANTANEOUS	2
INSTANTANEOUS	1
	1
,	0.7
,
F
i	0.5
	0.5
	0.3
	0.2
	0.1
	0.4	0.8	1.2	1.6	2	2.4	2.8	3.2	3.6	4	4.4

vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 5. Maximum On-State Characteristics

Motorola Thyristor Device Data

3±65

MAC15FP Series MAC15AFP Series

	3
(NORMALIZED)	3					GATE		OPEN
						GATE		OPEN
	2					APPLIES TO				EITHER		DIRECTION
						APPLIES TO				EITHER		DIRECTION
CURRENT
	1


HOLDING,	0.7



	0.5

H


I	0.3

		±40
	±60	±40	±20	0	20		40		60		80		100	120	140
				TJ, JUNCTION TEMPERATURE (°C)

ITSM , PEAK SURGE CURRENT (AMP)

300

200

100

50TC = 80°C f = 60 Hz

30 SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT

NUMBER OF CYCLES

Figure 6. Typical Holding Current

Figure 7. Maximum Nonrepetitive Surge Current

TRANSIENT THERMAL RESISTANCE	(NORMALIZED)
r(t),

0.5

0.2

ZθJC(t) = r(t) •RθJC

0.1

0.05

0.02

0.01

0.1	0.2	0.5	1	2	5	10	20	50	100	200	500	1 k	2 k	5 k	10 k
							t, TIME (ms)

Figure 8. Thermal Response

3±66	Motorola Thyristor Device Data

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