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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC15S/D

Advance Information

TRIACS

Silicon Bidirectional Thyristors

Designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications.

•Sensitive Gate allows Triggering by Microcontrollers and other Logic Circuits

•High Immunity to dv/dt Ð 25 V/ ms minimum at 110_C

•High Commutating di/dt Ð 8.0 A/ms minimum at 110 _C

•Minimum and Maximum Values of IGT, VGT and IH specified for ease of design

•On-State Current Rating of 15 Amperes RMS at 70_C

•High Surge Current Capability Ð 120 Amperes

•Blocking Voltage to 800 Volts

•Rugged, Economical TO220AB Package

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

MAC15S SERIES

TRIACS

15 AMPERES RMS

400 THRU 800

VOLTS

MT2

MT1

MT2

CASE 221A±06 (TO-220AB)

STYLE 4

Parameter		Symbol	Value	Unit

Peak Repetitive Off-State Voltage (1)		VDRM		Volts
(TJ = ±40 to 110°C, Sine Wave, 50 to 60Hz, Gate Open)	MAC15SD		400
	MAC15SM		600
	MAC15SN		800

On-State RMS Current		IT(RMS)	15	A
(Full Cycle Sine Wave, 60Hz, TJ = 70°C)
Peak Non-repetitive Surge Current		ITSM	120	A
(One Half Cycle, 60 Hz, TJ = 110°C)
Circuit Fusing Consideration		I2t	60	A2sec
(t = 8.3 ms)

Peak Gate Power		PGM	20	Watts
(Pulse Width ≤ 1.0 ms, TC = 70°C)
Average Gate Power		PG(AV)	0.5	Watts
(t = 8.3 ms, TC = 70°C)
Operating Junction Temperature Range		TJ	± 40 to +110	°C
Storage Temperature Range		Tstg	± 40 to +150	°C

THERMAL CHARACTERISTICS

Thermal Resistance			°C/W
Ð Junction to Case	RqJC	2.0
Ð Junction to Ambient	RqJA	62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds	TL	260	°C

(1) VDRMforalltypescanbeappliedonacontinuousbasis.Blockingvoltagesshallnotbetestedwithaconstantcurrentsourcesuchthatthevoltage

ratings of the devices are exceeded.

REV 0

Motorola, Inc. 1995

MAC15S		SERIES
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic			Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current	TJ = 25°C		IDRM	Ð	Ð	0.01	mA
(VD = Rated VDRM, Gate Open)	TJ = 25°C			Ð	Ð	0.01
	TJ = 110°C			Ð	Ð	2.0
ON CHARACTERISTICS

Peak On-State Voltage* (ITM = 21A)			VTM	Ð	Ð	1.8	Volts
Continuous Gate Trigger Current (VD = 12 V, RL = 100Ω)			IGT	.8	2.0	5.0	mA
MT2(+), G(+)				.8	2.0	5.0
MT2(+), G(±)				.8	3.0	5.0
MT2(±), G(±)				.8	3.0	5.0

Hold Current (VD = 12 V, Gate Open, Initiating Current = 150mA)			IH	1.0	3.0	10	mA
Latching Current (VD = 24V, IG = 5mA)			IL	2.0	5.0	15	mA
MT2(+), G(+)				2.0	5.0	15
MT2(+), G(±)				2.0	10	20
MT2(±), G(±)				2.0	5.0	15

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100Ω)			VGT	0.45	0.62	1.5	Volts
MT2(+), G(+)				0.45	0.62	1.5
MT2(+), G(±)				0.45	0.60	1.5
MT2(±), G(±)				0.45	0.65	1.5

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off±State Voltage			(dv/dt)c	8.0	10	Ð	A/ms
(VD = 400V, ITM = 3.5A, Commutating dv/dt = 10Vm/sec,
Gate Open, TJ = 110_C, f= 500Hz, Snubber: CS = 0.01 mF, RS =15W,
see figure 15. )

Critical Rate of Rise of Off-State Voltage			dv/dt	25	75	Ð	V/ms
(VD = Rate VDRM, Exponential Waveform, RGK = 510W, TJ = 110_C)
* Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

,MAXIMUM ALLOWABLE CASE TEMPERATURE (C)°	110										, MAXIMUM AVERAGE POWER DISSIPATION(WATTS)	25
	100											20
								a = 30 and 60°
	90											15
					α
	80			α								10
			a = CONDUCTION ANGLE				120°
			a = CONDUCTION ANGLE
	70									180°		5
										180°
	60									DC		0
	60	0	2	4	6	8	10	12	14	16		0
C				IT(RMS), RMS ON±STATE CURRENT (AMPS)							(AV)
T				IT(RMS), RMS ON±STATE CURRENT (AMPS)							P

			α				DC
			α			180°
		α				180°
		α				120°
						120°
	a = CONDUCTION ANGLE				90°
	a = CONDUCTION ANGLE				60°
					60°
							a = 30°
0	2	4	6	8	10	12	14	16
		IT(RMS), RMS ON±STATE CURRENT (AMPS)

Figure 1.0 RMS Current Derating

Figure 2.0 Maximum On±State Power Dissipation

Data Sheets

Motorola Thyristor Device Data

(AMPS)CURRENTSTATE-ONINSTANTANOUS								MAC15S		SERIES
(AMPS)CURRENTSTATE-ONINSTANTANOUS	100	Typical @ TJ = 25 °C								(NORMALIZED)RESISTANCETHERMAL	1
	100										1

	10			Maximum @									ZqJC(t) = RqJC(t) r(t)
				TJ = 25 °C
											0.1
	1		Maximum @
			Maximum @
			TJ = 110°C							,TRANSIENT
I	0.5	1	1.5	2	2.5	3	3.5	4	4.5	,TRANSIENT	0.1	1	10	100	1000	1@104
,	0.1										0.01
T
		VT, INSTANTANEOUS ON±STATE VOLTAGE (VOLTS)								(t)			t, TIME (ms)
		VT, INSTANTANEOUS ON±STATE VOLTAGE (VOLTS)								R			t, TIME (ms)

Figure 3.0 On±State Characteristics

Figure 4.0 Transient Thermal Response

	7											9
HOLDING CURRENT (mA)	6										LATCHING CURRENT (mA)	8
	6
	5											7
	5																Q1
																	Q1
	4						MT2 NEGATIVE					6
	4
												5
	3															Q3
	3											4
			MT2 POSITIVE									4
,											,
H											L
H	2										L
I											I	3


	1	±25	±10	5	20	35	50	65	80	95	110	2	±25	±10	5	20	35	50	65	80	95	110
	±40	±25	±10	5	20	35	50	65	80	95	110	±40	±25	±10	5	20	35	50	65	80	95	110
				TJ, JUNCTION TEMPERATURE (°C)											TJ, JUNCTION TEMPERATURE (°C)

Figure 5.0 Typical Holding Current Versus	Figure 6.0 Typical Latching Current Versus
Junction Temperature	Junction Temperature

	7											0.9
, GATE TRIGGER CURRENT (mA)	6										GATE TRIGGER VOLTAGE (VOLTS)	0.8
												0.8
	5											0.7
					Q3							0.7							Q3
	4				Q3


	3											0.6				Q1
																Q1

	2		Q2									0.5					Q2
	2																Q2
			Q1
GT	1		Q1								,	0.4
I											GT
											V
	0	±25	±10	5	20	35	50	65	80	95	110	0.3	±25	±10	5	20	35	50	65	80	95	110
	±40	±25	±10	5	20	35	50	65	80	95	110	±40	±25	±10	5	20	35	50	65	80	95	110
			TJ, JUNCTION TEMPERATURE (°C)												TJ, JUNCTION TEMPERATURE (°C)

Figure 7.0 Typical Gate Trigger Current Versus	Figure 8.0 Typical Gate Trigger Voltage Versus
Junction Temperature	Junction Temperature

Motorola Thyristor Device Data

Data Sheets

STATIC dv/dt (V/mS)

								MAC15S		SERIES
140											110
	V	= 400V					TJ = 110°C				100					TJ = 100°C
	PK										100
120										mS)
										mS)	90
	600V									(V/	90
100	600V									(V/	80
100										dv/dt	80						110°C
	800V									STATIC	70
	800V
80																	120°C
											60
													RG ± MT1 = 510W
60											50
100	200	300	400	500	600	700	800	900	1000		400	450	500	550	600	650	700	750	800
		RGK, GATE±MT1 RESISTANCE (OHMS)												VPK, Peak Voltage (Volts)

Figure 9.0 Typical Exponential Static dv/dt Versus	Figure 10.0 Typical Exponential Static dv/dt Versus
Gate±MT1 Resistance, MT2(+).	Peak Voltage, MT2(+).

110					180
100					160
100
90			VPK = 400V		140
90
80					120
80
			600V		100
70
STATICdv/dt(V/S)m					80
STATICdv/dt(V/S)m			800V		(V/dv/dtSTATICS)m
60					60
	RG ± MT1 = 510W				60
50	RG ± MT1 = 510W
50					40
					40
40	105	110	115	120	20
100	105	110	115	120	125
		TJ, Junction Temperature (°C)

				TJ = 100°C
					110°C
						120°C
	RG ± MT1 = 510W
400	450	500	550	600	650	700	750	800
			VPK, Peak Voltage		(Volts)

Figure 11.0 Typical Exponential Static dv/dt Versus	Figure 12.0 Typical Exponential Static dv/dt Versus
Junction Temperature, MT2(+)	Peak Voltage, MT2(±)

(V/

200

VOLTAGE

100

150

OF COMMUTATING

VPK = 400V

90°C

600V

100

100°C

S)(V/dv/dtm

STATIC

800V

OFRISE

f = 2 tw

RATE

6f ITM

110 C

RG ± MT1 = 510W

(di/dt)c = 1000

, CRITICAL

VDRM

100

105

110

115

120

125

TJ, Junction Temperature (°C)

(di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 13.0

Typical Exponential Static dv/dt Versus

(dv/dt)

Figure 14.0

Critical Rate of Rise of

Junction Temperature, MT2(±)

Commutating Voltage

Data Sheets

Motorola Thyristor Device Data

MAC15S SERIES

20 mHY

1N4007

400 VRMS

ADJUST FOR

MEASURE

15W

ITM, 60 Hz VAC

CONTROL

TRIGGER

CHARGE

CONTROL

0.01 mF

400 V

TRIGGER

ADJUST FOR

NON-POLAR

1N914

dv/dt(c)

5 mF

Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 15.0 Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage

Motorola Thyristor Device Data

Data Sheets

MAC15S SERIES

NOTES

Data Sheets

Motorola Thyristor Device Data

MAC15S SERIES

NOTES

Motorola Thyristor Device Data

Data Sheets

MAC15S SERIES

PACKAGE DIMENSIONS

				±T±	PLANESEATING
	B	F	T	C
			T	S
4
Q		A
1	2	3	U
H
		K			STYLE 4:
Z					PIN 1. MAIN TERMINAL 1
					2.	MAIN TERMINAL 2
					3.	GATE
L				R	4.	MAIN TERMINAL 2
L				R
V				J
G
		D		CASE 221A±06
	N			CASE 221A±06
				(TO-220AB)

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

To order literature by mail:

USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

JAPAN: Nippon Motorola Ltd.; 4±32±1, Nishi±Gotanda, Shinagawa±ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

To order literature electronically:

MFAX: RMFAX0@email.sps.mot.com ±TOUCHTONE (602) 244±6609 INTERNET: http://Design±NET.com


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