Добавил:

student_tipo Опубликованный материал нарушает ваши авторские права? Сообщите нам.

Вуз:

Балаковский институт техники, технологии и управления

Предмет:

[НЕСОРТИРОВАННОЕ]

Файл:

MAC9

.PDF

Источник:

https://manualmachine.com

Скачиваний:

Добавлен:

06.01.2022

Размер:

80.67 Кб

Скачать

☆

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

TRIACS

Silicon Bidirectional Thyristors

Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.

•Blocking Voltage to 800 Volts

•On-State Current Rating of 8.0 Amperes RMS at 100°C

•Uniform Gate Trigger Currents in Three Modes

•High Immunity to dv/dt Ð 500 V/ μs minimum at 125°C

•Minimizes Snubber Networks for Protection

•Industry Standard TO-220AB Package

•High Commutating di/dt Ð 6.5 A/ms minimum at 125 °C

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

MAC9

SERIES*

*Motorola preferred devices

TRIACS

8.0AMPERES RMS 400 thru 800

VOLTS

MT2

MT1

MT2

CASE 221A-06 (TO-220AB)

Style 4

Symbol	Parameter		Value	Unit

VDRM	Peak Repetitive Off-State Voltage (1)			Volts
	(± 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)	MAC9D	400
		MAC9M	600
		MAC9N	800

IT(RMS)	On-State RMS Current		8.0	A
	(60 Hz, TC = 100°C)
ITSM	Peak Non-repetitive Surge Current		80	A
	(One Full Cycle, 60 Hz, TJ = 125°C)
I2t	Circuit Fusing Consideration (t = 8.3 ms)		26	A2sec
PGM	Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C)		16	Watts
PG(AV)	Average Gate Power (t = 8.3 ms, TC = 80°C)		0.35	Watts
TJ	Operating Junction Temperature Range		± 40 to +125	°C
Tstg	Storage Temperature Range		± 40 to +150	°C
THERMAL CHARACTERISTICS

RqJC	Thermal Resistance Ð Junction to Case		2.2	°C/W
RqJA	Thermal Resistance Ð Junction to Ambient		62.5
TL	Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds		260	°C

(1)VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Thyristor Device Data

3±49

MAC9	SERIES
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol		Characteristic			Min	Typ	Max	Unit

OFF CHARACTERISTICS

IDRM		Peak Repetitive Blocking Current	TJ = 25°C		Ð	Ð	0.01	mA
		(VD = Rated VDRM, Gate Open)	TJ = 25°C		Ð	Ð	0.01
			TJ = 125°C		Ð	Ð	2.0
ON CHARACTERISTICS

VTM		Peak On-State Voltage*						Volts
		(ITM = ± 11 A Peak)			Ð	1.2	1.6
IGT		Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω)			10	16	50	mA
		MT2(+), G(+)			10	16	50
		MT2(+), G(±)			10	18	50
		MT2(±), G(±)			10	22	50

IH		Hold Current						mA
		(VD = 12 V, Gate Open, Initiating Current = ±150 mA)			Ð	30	50
IL		Latch Current (VD = 24 V, IG = 50 mA)			Ð	20	50	mA
		MT2(+), G(+); MT2(±), G(±)			Ð	20	50
		MT2(+), G(±)			Ð	30	80

VGT		Gate Trigger Voltage (VD = 12 V, RL = 100 Ω)			0.5	0.69	1.5	Volts
		MT2(+), G(+)			0.5	0.69	1.5
		MT2(+), G(±)			0.5	0.77	1.5
		MT2(±), G(±)			0.5	0.72	1.5

DYNAMIC CHARACTERISTICS

(di/dt)c		Rate of Change of Commutating Current* See Figure 10.			6.5	Ð	Ð	A/ms
		(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/μs,		CL = 10 μF
		Gate Open, TJ = 125°C, f = 250 Hz, No Snubber)		LL = 40 mH
dv/dt		Critical Rate of Rise of Off-State Voltage			500	Ð	Ð	V/μs
		(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

C)(°	125
	125
	120
TEMPERATURE	120						α =	120, 90,		60, 30°
							α =	120, 90,		60, 30°
	115
	115				α = 180	°
					α = 180	°
CASE	110
	110						DC
							DC
,
C	105
T	105
	100

		1	2	3	4		5		6		7	8
	0	1	2	3	4		5		6		7	8

IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating

PAV, AVERAGE POWER (WATTS)

12
12								DC
								DC
10
10					180°
					180°
8
8					120°
					120°
6
6								60°
4								60°
4							90°
							90°
2					α = 30°
2
0
0	1	2	3	4	5	6	7	8
0	1	2	3	4	5	6	7	8

IT(RMS), ON-STATE CURRENT (AMP)

Figure 2. On-State Power Dissipation

3±50	Motorola Thyristor Device Data

100

(AMP)	10
, INSTANTANEOUS ON-STATE CURRENT	1
T	1
I

0.1

						MAC9	SERIES
RESISTANCETHERMALTRANSIENT	(NORMALIZED)	1
RESISTANCETHERMALTRANSIENT	(NORMALIZED)
TYPICAL AT
TJ = 25°C
°		0.1
MAXIMUM @ TJ = 125 C
r(t),
		0.01	1	10	100	1000	1 ´ 104
		0.1	1	10	100	1000	1 ´ 104
					t, TIME (ms)

Figure 4. Thermal Response

			MAXIMUM @ TJ = 25°C									40


											(mA)	35



												30


											CURRENT	25						MT2		POSITIVE
											CURRENT							MT2		POSITIVE


											, HOLD	20


												15
											H
											H
											I		MT2		NEGATIVE
												10	MT2		NEGATIVE


												5
0	0.5	1	1.5	2	2.5	3	3.5	4	4.5	5		5		10		30	50		70		90	110	130
0	0.5	1	1.5	2	2.5	3	3.5	4	4.5	5		± 50 ± 30 ± 10		10		30	50		70		90	110	130
		VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)												TJ, JUNCTION TEMPERATURE (°C)

Figure 3. On-State Characteristics

Figure 5. Hold Current Variation

100

CURRENT (mA)
TRIGGERGATE,	10
	10
GT
I
	1
	± 50

										1
										1
									(VOLT)	0.95
	Q2								(VOLT)	0.9
									VOLTAGE	075
										0.85
			Q3							0.8
										0.8
	Q1								TRIGGER	0.7
									TRIGGER

										0.65
									GATE,	0.6
									GATE,	0.55
										0.55
									GT	0.5
									GT
									V	0.45
										0.45
										0.4
± 30	± 10	10	30	50	70	90	110	130		0.4
± 30	± 10	10	30	50	70	90	110	130		± 50

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Trigger Current Variation

± 30

± 10

110

130

TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Gate Trigger Voltage Variation

Motorola Thyristor Device Data

3±51

MAC9 SERIES

dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE (V/μs)

5000

4.5K

3.5K

2.5K

1.5K

500

0 1

				100
		RISE OF	(V/μs)
	MT2 NEGATIVE	RATECRITICALOF	VOLTAGE		TJ = 125°C			100°C				75°C
	MT2 NEGATIVE
				10
			COMMUTATING	10
		(dv/dt)	COMMUTATING		VDRM	1	1000
		,			tw	f =
		c			tw	2 tw	6f ITM
	MT2 POSITIVE					(di/dt)c =	6f ITM
	MT2 POSITIVE					(di/dt)c =
10	100	1000		110	15	20	25	30	35	40	45	50	55	60
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)					(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 8. Critical Rate of Rise of Off-State Voltage	Figure 9. Critical Rate of Rise of
(Exponential)	Commutating Voltage

				LL			1N4007
200 VRMS
ADJUST FOR					MEASURE
ITM, 60 Hz VAC							I
	TRIGGER	CHARGE	CONTROL				±
	TRIGGER	CONTROL					±
CHARGE		CONTROL					400 V
CHARGE							400 V
							+
							2
			TRIGGER				2
		NON-POLAR		1N914		51
		NON-POLAR				G	1
		CL				G	1
		CL

Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage

3±52	Motorola Thyristor Device Data

Соседние файлы в папке THYRIST

#
06.01.2022134.74 Кб2mac4dhmrev0.pdf
#
06.01.2022161.86 Кб2mac4dsmrev0.pdf
#
06.01.2022239.06 Кб2MAC6071R.PDF
#
06.01.202281.36 Кб2MAC8D.PDF
#
06.01.2022772.08 Кб2MAC8S.PDF
#
06.01.202280.67 Кб2MAC9.PDF
#
06.01.2022219.78 Кб2MAC97REV.PDF
#
06.01.2022117.71 Кб2MBS4991.PDF
#
06.01.2022301.07 Кб2MCR08BT1.PDF
#
06.01.202283.58 Кб2MCR100.PDF
#
06.01.202281.5 Кб4MCR102RE.PDF