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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC97/D

Silicon Bidirectional

Triode Thyristors

. . . designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO±92 package which is readily adaptable for use in automatic insertion equipment.

One±Piece, Injection±Molded Unibloc Package

Sensitive Gate Triggering in Four Trigger Modes for all possible Combinations of Trigger Sources, and Especially for Circuits that Source Gate Drives

All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

 

 

 

 

Peak Repetitive Off-State Voltage

VDRM

 

Volts

(Gate Open, T = ±40 to +110°C)(1)

 

 

 

J

 

 

 

1/2 Sine Wave 50 to 60 Hz, Gate Open

 

 

 

MAC97±4, MAC97A4

 

200

 

MAC97±6, MAC97A6

 

400

 

MAC97±8, MAC97A8

 

600

 

 

 

 

 

On-State RMS Current

IT(RMS)

0.8

Amp

Full Cycle Sine Wave 50 to 60 Hz (TC = +50°C)

 

 

 

Peak Non±repetitive Surge Current

ITSM

8.0

Amps

(One Full Cycle, 60 Hz, TA = 110°C)

 

 

 

Circuit Fusing Considerations

I2t

0.26

A2s

TJ = ±40 to +110°C (t = 8.3 ms)

 

 

 

Peak Gate Voltage (t v 2.0 ms)

VGM

5.0

Volts

Peak Gate Power (t v 2.0 ms)

PGM

5.0

Watts

Average Gate Power (TC = 80°C, t v 8.3 ms)

PG(AV)

0.1

Watt

Peak Gate Current (t v 2.0 ms)

IGM

1.0

Amp

Operating Junction Temperature Range

TJ

±40 to +110

°C

Storage Temperature Range

Tstg

±40 to +150

°C

THERMAL CHARACTERISTICS

 

 

 

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

RθJC

75

°C/W

Thermal Resistance, Junction to Ambient

RθJA

200

°C/W

(1)VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

MAC97,A IMPROVED SERIES

(Device Date Code

9625 and Up)

Motorola preferred devices

TRIACs

0.8 AMPERE RMS

200 Ð 600 VOLTS

MT1

MT2

G

MT1

G

MT2

CASE 29±04

TO±226AA, STYLE 12 (TO±92)

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola, Inc. 1996

MAC97,A IMPROVED SERIES

ELECTRICAL CHARACTERISTICS (TC = 25°C, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted)

 

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

 

Peak Blocking Current(1)

 

IRRM

Ð

Ð

0.1

mA

(VD = Rated VDRM, TJ = 110°C, Gate Open)

 

 

 

 

 

Peak On-State Voltage (Either Direction)

VTM

Ð

Ð

1.65

Volts

(ITM = 1.1 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)

 

 

 

 

 

Gate Trigger Current (Continuous dc)

IGT

 

 

 

mA

(VD = 12 Vdc, RL = 100 Ohms)

 

 

 

 

 

MT2(+), G(+)

 

 

Ð

Ð

10

 

MT2(+), G(±)

 

 

Ð

Ð

10

 

MT2(±), G(±)

 

 

Ð

Ð

10

 

MT2(±), G(+)

MAC97

 

Ð

Ð

10

 

MT2(+), G(+)

 

 

Ð

Ð

5.0

 

MT2(+), G(±)

 

 

Ð

Ð

5.0

 

MT2(±), G(±)

 

 

Ð

Ð

5.0

 

MT2(±), G(+)

MAC97A

 

Ð

Ð

7.0

 

 

 

 

 

 

 

Gate Trigger Voltage, (Continuous dc)

VGT

 

 

 

Volts

(VD = 12 Vdc, RL = 100 Ohms)

 

Ð

Ð

2.0

 

MT2(+), G(+) All Types

 

 

 

MT2(+), G(±) All Types

 

 

Ð

Ð

2.0

 

MT2(±), G(±) All Types

 

 

Ð

Ð

2.0

 

MT2(±), G(+) All Types

 

 

Ð

Ð

2.5

 

(VD = Rated VDRM, RL = 10 k Ohms, TJ = 110°C)

 

 

 

 

 

MT2(+), G(+); MT2(±), G(±); MT2(+), G(±) All Types

 

0.1

Ð

Ð

 

MT2(±), G(+) All Types

 

 

0.1

Ð

Ð

 

 

 

 

 

 

 

 

Holding Current

 

IH

Ð

Ð

5.0

mA

(VD = 12 Vdc, ITM = 200 mA, Gate Open)

 

 

 

 

 

Gate Controlled Turn±On Time

tgt

Ð

2.0

Ð

ms

(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)

 

 

 

 

 

Critical Rate±of±Rise of Commutation Voltage

dv/dtc

1.5

Ð

Ð

V/ms

(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS,

 

 

 

 

 

On±State Current Duration = 2.0 mS, VDRM = 200 V,

 

 

 

 

 

Gate Unenergized, TC = 110°C,

 

 

 

 

 

Gate Source Resistance = 150 W, See Figure 13)

 

 

 

 

 

 

 

 

 

 

 

Critical Rate±of±Rise of Off State Voltage

dv/dt

10

Ð

Ð

V/ms

(Vpk = Rated VDRM, TC = 110°C, Gate Open, Exponential Method)

 

 

 

 

 

2

Motorola Thyristor Device Data

MAC97,A IMPROVED SERIES

°C

110

 

 

 

 

 

 

 

 

 

110

(

 

 

 

 

 

 

 

 

 

 

 

ALLOWABLE CASE TEMPERATURE

100

 

 

 

T = 30°

 

 

 

 

ALLOWABLE

100

90

 

 

 

 

60°

 

 

 

90

 

 

DC

 

 

 

 

 

 

 

 

 

 

90°

 

 

80

80

 

 

 

 

 

 

 

 

 

180°

 

 

 

 

 

 

70

 

 

 

 

 

 

 

MAXIMUM,

70

 

 

 

120°

 

 

 

 

60

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

60

 

 

 

 

 

 

 

 

50

 

 

 

α

 

 

 

 

 

T(RMS) TEMPERATUREAMBIENTC)°(

50

 

α

 

 

 

 

 

 

40

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, MAXIMUM

40

α = CONDUCTION ANGLE

 

 

 

 

 

I

30

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

20

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

 

C

 

 

 

 

 

 

 

 

 

 

 

T

 

 

IT(RMS), RMS ON±STATE CURRENT (AMPS)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

T = 30°

 

 

 

 

 

 

 

 

 

60°

90°

 

 

 

 

DC

 

 

 

 

 

 

 

 

180°

 

 

 

 

 

 

 

 

 

120°

 

 

 

 

 

 

 

α

 

 

 

 

 

 

 

α

 

 

 

 

 

 

 

α = CONDUCTION ANGLE

 

 

 

 

 

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

 

 

IT(RMS), RMS ON±STATE CURRENT (AMPS)

 

 

Figure 1. RMS Current Derating

Figure 2. RMS Current Derating

(WATTS)

1.2

 

 

 

 

 

 

 

 

DISSIPATION

1.0

 

 

α

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

α

 

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

POWER

 

 

 

 

 

 

 

 

 

α = CONDUCTION ANGLE

 

 

 

 

 

0.6

 

 

 

 

 

 

 

 

AVERAGE

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,MAXIMUM

0.2

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

(AV)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0

 

 

 

 

 

 

 

 

 

P

 

 

IT(RMS), RMS ON±STATE CURRENT (AMPS)

 

 

 

 

 

 

 

(AMPS)

10

 

 

 

 

 

 

 

 

 

 

TYPICAL @ TJ = 25°C

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

MAXIMUM @ TJ = 110°C

1.0

 

 

 

 

 

 

 

 

 

ON±STATE

 

 

 

 

 

 

 

 

 

 

 

MAXIMUM @ TJ = 25°C

 

 

 

 

 

,INSTANTANEOUS

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

MAXIMUM @ TJ = 110°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

T

 

 

 

 

 

 

 

 

 

I

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

 

 

 

VT, INSTANTANEOUS ON±STATE VOLTAGE (VOLTS)

 

Figure 3. Power Dissipation

Figure 4. On±State Characteristics

THERMAL RESISTANCE(NORMALIZED)

1.0

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

ZQJC(t) = RQJC(t) @ r(t)

 

PEAK SURGE CURRENT (AMPS)

5.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

TJ = 110°C

 

 

 

 

 

 

 

 

 

 

 

f = 60 Hz

 

 

CYCLE

 

 

 

 

 

 

 

 

 

 

 

 

 

TRANSIENT

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TSM

 

Surge is preceded and followed by rated current.

 

 

 

 

 

 

 

I

 

 

0.01

 

 

 

1S103

1S104

1.0

 

 

5.0

10

 

 

 

,

0.1

1.0

10

100

 

1.0

2.0

3.0

30

50

100

(t)

 

R

 

 

t, TIME (ms)

 

 

 

 

 

 

NUMBER OF CYCLES

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 5. Transient Thermal Response

Figure 6. Maximum Allowable Surge Current

Motorola Thyristor Device Data

3

MAC97,A IMPROVED SERIES

 

6.0

 

 

 

 

 

 

 

 

10

 

Q3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4.0

 

 

 

MAIN TERMINAL

 

 

 

 

 

Q2

 

 

 

Q4

 

 

 

 

 

 

 

 

 

 

Q1

 

 

 

 

 

 

 

 

 

 

 

#2 POSITIVE

 

 

 

 

 

 

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

CURRENTHOLDING(mA)

2.0

 

 

MAIN TERMINAL

 

 

 

 

CURRENTTRIGGER(mA)

 

 

 

 

 

 

 

 

 

 

#2 NEGATIVE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

GATE

 

 

 

 

 

 

 

 

H

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

0

±20

0

20

40

60

80

100

110

0.1

±20

0

20

40

60

80

100

110

 

±40

±40

 

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

 

 

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

 

VGT, GATE TRIGGER VOLTAGE (VOLTS)

Figure 7. Typical Holding Current Variation

1.1

0.9

Q3

Q4

 

Q2

0.7

Q1

0.5

0.3

±40

±20

0

20

40

60

80

100

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

 

Figure 8. Typical Gate Trigger Current

 

 

 

Variation

 

 

60

 

 

 

 

 

 

 

600 Vpk

 

 

 

 

TJ = 110°C

S)

50

 

MAIN TERMINAL

 

 

 

#2 POSITIVE

 

m

 

 

 

 

(V/

 

 

 

 

dv/dt

40

MAIN TERMINAL

 

 

#2 NEGATIVE

 

 

STATIC

 

 

 

 

 

 

 

 

30

 

 

 

 

20

100

1000

10,000

 

10

RGK, GATE ± MT1 RESISTANCE (OHMS)

Figure 9. Gate Trigger Voltage Variation

 

 

10

 

 

 

 

 

 

 

 

60°C

dv/dt

S)

ITM

 

80°C

 

 

 

COMMUTATING

(V/

 

 

100°C

 

,

 

 

 

 

 

 

 

c

 

110°C

 

 

dv/dt

tw

 

 

 

 

 

m

 

 

 

f +

1

 

 

 

 

 

2tw

6f

ITM

 

 

 

 

 

 

VDRM

(di dt)c + 1000

 

1.0

 

 

10

 

 

1.0

 

 

di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS)

Figure 11. Typical Commutating dv/dt versus Current Crossing Rate and Junction Temperature

Figure 10. Exponential Static dv/dt versus

 

 

Gate

MT1 Resistance

 

 

 

10

 

 

 

60 Hz

 

 

 

 

 

 

 

 

 

 

 

 

180 Hz

 

dv/dt

S)

 

 

 

300 Hz

 

 

 

 

 

 

COMMUTATING

m

 

 

 

 

 

(V/

 

 

400 Hz

 

 

,

 

 

 

 

 

c

 

 

 

 

 

dv/dt

 

 

 

 

 

 

 

VDRM = 200 V

 

 

 

 

 

1.0

70

80

90

100

110

 

60

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

 

Figure 12. Typical Commutating dv/dt versus Junction Temperature at 0.8 Amps RMS

4

Motorola Thyristor Device Data

MAC97,A IMPROVED SERIES

75 VRMS

 

ADJUST FOR

 

ITM, 60 Hz VAC

 

 

TRIGGER

CHARGE

CHARGE

CONTROL

 

 

 

5 mF NON±POLAR

CL

TRIGGER CONTROL

80 mHY

 

 

 

1N4007

 

 

LL

 

 

 

 

 

 

 

 

 

 

 

 

MEASURE

RS

56

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

±

200 V

 

 

2

CS

0.047 CS

+

 

 

 

 

ADJUST FOR

 

 

 

 

 

 

dv/dt(c)

 

 

1N914

51

1

 

 

 

 

 

G

 

 

 

 

 

NOTE: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 13. Simplified Q1 (dv/dt)c Test Circuit

Motorola Thyristor Device Data

5

MAC97,A IMPROVED SERIES

PACKAGE DIMENSIONS

A

B

 

STYLE 12:

PIN 1. MAIN TERMINAL 1 R 2. GATE

3. MAIN TERMINAL 2

P

 

L

SEATING

F

PLANE

K

X X

D

G

 

H

J

V

C

1

SECTION X±X

N

 

N

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.175

0.205

4.45

5.20

B

0.170

0.210

4.32

5.33

C

0.125

0.165

3.18

4.19

D

0.016

0.022

0.41

0.55

F

0.016

0.019

0.41

0.48

G

0.045

0.055

1.15

1.39

H

0.095

0.105

2.42

2.66

J

0.015

0.020

0.39

0.50

K

0.500

±±±

12.70

±±±

L

0.250

±±±

6.35

±±±

N

0.080

0.105

2.04

2.66

P

±±±

0.100

±±±

2.54

R

0.115

±±±

2.93

±±±

V

0.135

±±±

3.43

±±±

CASE 29±04 (TO±226AA)

(TO±92)

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, 6F Seibu±Butsuryu±Center,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447 or 602±303±5454

3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±81±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE 602±244±6609

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MAC97/D

*MAC97/D*

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