motorola / THYRIST / mac4dhmrev0

MAC4DHM

Sensitive

Gate

TRIACS

MAC4DLM

Silicon Bidirectional Thyristors

Motorola Preferred Devices

Designed for high volume, low cost, industrial and consumer applications

such as motor control; process control; temperature, light and speed control.

• Small Size Surface Mount DPAK Package

TRIACS

• Passivated Die for Reliability and Uniformity

4.0 AMPERES RMS

• Four±Quadrant Triggering

MT2

600 VOLTS

• Blocking Voltage to 600 V

• On±State Current Rating of 4.0 Amperes RMS at 93°C

• Low Level Triggering and Holding Characteristics

ORDERING INFORMATION

G

MT2

• To Obtain ªDPAKº in Surface Mount Leadform (Case 369A)

MT1

Shipped in Sleeves Ð No Suffix, i.e. MAC4DHM

MT1

G

Shipped in 16 mm Tape and Reel Ð Add ªT4º Suffix to Device Number,

MT2

i.e. MAC4DHMT4

CASE 369A±13

• To Obtain ªDPAKº in Straight Lead Version (Case 369) Shipped in Sleeves Ð

STYLE 6

Add ª±1º Suffix to Device Number, i.e. MAC4DHM±1

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off±State Voltage (1)

V

Volts

(TJ = ±40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)

MAC4DHM

DRM

600

MAC4DLM

600

On±State RMS Current

IT(RMS)

Amps

(Full Cycle Sine Wave, 60 Hz, TC = 93°C)

4.0

Peak Non±Repetitive Surge Current

ITSM

(One Full Cycle, 60 Hz, TJ = 110°C)

40

Circuit Fusing Consideration (t = 8.3 msec)

I2t

6.6

A2sec

Peak Gate Power

PGM

Watts

(Pulse Width ≤ 10 msec, TC = 93°C)

0.5

Average Gate Power

PG(AV)

(t = 8.3 msec, TC = 93°C)

0.1

Peak Gate Current (Pulse Width ≤ 10

sec,m

TC = 93°C)

IGM

0.2

Amps

Peak Gate Voltage (Pulse Width ≤ 10

sec,m

TC = 93°C)

VGM

5.0

Volts

Operating Junction Temperature Range

TJ

±40 to 110

°C

Storage Temperature Range

Tstg

±40 to 150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance Ð Junction to Case

RqJC

3.5

°C/W

Ð Junction to Ambient

(2)

RqJA

88

Ð Junction to Ambient

RqJA

80

Maximum Lead Temperature for Soldering Purposes (3)

T

260

°C

L

MAC4DHM

MAC4DLM

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Typ

Max

Unit

Peak Repetitive Blocking Current

TJ = 25°C

IDRM

mA

(VD = Rated VDRM, Gate Open)

Ð

Ð

0.01

TJ = 110°C

Ð

Ð

2.0

Peak On±State Voltage (1)

V

Volts

(ITM = ± 6.0 A)

TM

Ð

1.3

1.6

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)

IGT

Ð

1.8

3.0

mA

MT2(+), G(+)

MAC4DLM

MT2(+), G(±)

Ð

2.1

3.0

MT2(±), G(±)

Ð

2.4

3.0

MT2(±), G(+)

Ð

4.2

5.0

MT2(+), G(+)

MAC4DHM

Ð

1.8

5.0

MT2(+), G(±)

Ð

2.1

5.0

MT2(±), G(±)

Ð

2.4

5.0

MT2(±), G(+)

Ð

4.2

10

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)

VGT

0.5

0.62

1.3

Volts

MT2(+), G(+)

MT2(+), G(±)

0.5

0.57

1.3

MT2(±), G(±)

0.5

0.65

1.3

MT2(±), G(+)

0.5

0.74

1.3

(VD = 12 V, RL = 10 K W, TJ = 110°C)

0.1

0.4

Ð

MT2(+), G(+); MT2(+), G(±); MT2(±), G(±); MT2(±), G(+)

Holding Current

IH

mA

(VD = 12 V, Gate Open, IT = ± 200 mA)

Ð

1.5

15

Latching Current

IL

mA

MT2(+), G(+)

(VD = 12 V, IG = 5.0 mA)

Ð

1.75

10

MT2(+), G(±)

(VD = 12 V, IG = 5.0 mA)

Ð

5.2

10

MT2(±), G(±)

(VD = 12 V, IG = 5.0 mA)

Ð

2.1

10

MT2(±), G(+)

(VD = 12 V, IG = 10 mA)

Ð

2.2

10

DYNAMIC CHARACTERISTICS

Characteristics

Symbol

Min

Typ

Max

Unit

Rate of Change of Commutating Current (1)

di/dt(c)

A/ms

(VD = 200 V, ITM = 1.8 A, Commutating dv/dt = 1.0 V/msec, TJ = 110°C,

Ð

3.0

Ð

f = 250 Hz, CL = 5.0 mfd, LL = 80 mH, RS = 56 W, CS = 0.03 mfd)

See Figure 10

Critical Rate of Rise of Off±State Voltage

dv/dt

V/ms

(VD = 0.67 X Rated VDRM, Exponential Waveform,

Ð

10

Ð

Gate Open, TJ = 110°C)

(1) Pulse test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.

2

Motorola Thyristor Device Data

Figure 1. RMS Current Derating

Figure 2. On±State Power Dissipation

Figure 3. On±State Characteristics

Figure 4. Transient Thermal Response

(mA)CURRENTTRIGGERGATE,

8.0

(VOLTS)VOLTAGETRIGGERGATE

1.0

7.0

Q4

Q4

Q1

6.0

0.8

5.0

Q2

Q3

Q3

4.0

0.6

Q2

3.0

Q1

2.0

0.4

GT

1.0

,

I

GT

V

0

35

0.2

±40

±25

±10

5.0

20

50

65

80

95

110

±40

±25

±10

5.0

20

35

50

65

80

95

110

TJ, JUNCTION TEMPERATURE (°C)

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Current versus

Figure 6. Typical Gate Trigger Voltage versus

Junction Temperature

Junction Temperature

Motorola Thyristor Device Data

3

Figure 9. Exponential Static dv/dt versus

Figure 10. Critical Rate of Rise of

Gate±MT1 Resistance, MT2(+)

Commutating Voltage

4

Motorola Thyristor Device Data

MAC4DHM

MAC4DLM

80 mHY

1N4007

200 VRMS

LL

ADJUST FOR

MEASURE

ITM, 60 Hz VAC

I

RS

56 W

TRIGGER

CHARGE

CONTROL

±

CONTROL

CHARGE

CS

200 V

0.03 mF

+

2

ADJUST FOR

TRIGGER

5 mF

1N914

51

dv/dt(c)

1

NON-POLAR

G

CL

Motorola Thyristor Device Data

5

Mfax is a trademark of Motorola, Inc.

How to reach us:

USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4±32±1,

P.O. Box 5405, Denver, Colorado 80217. 303±675±2140 or 1±800±441±2447

Nishi±Gotanda, Shinagawa±ku, Tokyo 141, Japan. 81±3±5487±8488

Mfax : RMFAX0@email.sps.mot.com ± TOUCHTONE 602±244±6609

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

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Motorola Thyristor Device Data

MAC4DHM/D