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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MKP3V110/D

Sidac High Voltage

Bilateral Triggers

. . . designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like an SCR until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Applications are:

•High Pressure Sodium Vapor Lighting

•Strobes and Flashers

•Ignitors

•High Voltage Regulators

•Pulse Generators

MKP3V110* MKP3V120* MKP3V130*

*Motorola preferred devices

SIDACs

1 AMPERE RMS

100 thru 135 VOLTS

MT1

MT2

				CASE 267-03
				SURMETIC 50
				PLASTIC AXIAL
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating	Symbol		Min	Max	Unit

Repetitive Breakover Voltage	V(BO)				Volts
MKP3V110		100		120
MKP3V120		110		130
MKP3V130		120		140

Off-State Repetitive Voltage	VDRM	Ð		± 90	Volts
On-State RMS Current	IT(RMS)	Ð		1	Amp
On-State Surge Current (Non-repetitive)	ITSM	Ð		20	Amps
(60 Hz One Cycle Sine Wave, Peak Value)

Operating Junction Temperature Range	TJ	±40		+125	°C
Storage Temperature Range	Tstg	±40		+150	°C
Lead Solder Temperature	Ð	Ð		+230	°C
(Lead Length ≥ 1/16″ from Case, 10 s Max)

THERMAL CHARACTERISTICS

Characteristic	Symbol		Min	Max	Unit

Thermal Resistance, Junction to Lead	RqJL	Ð		15	°C/W
(Lead Length = 3/8″ )

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

MKP3V110 MKP3V120 MKP3V130

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; both directions)

Characteristic	Symbol	Min	Typ	Max	Unit

Breakover Current	I(BO)	Ð	Ð	200	μA
Repetitive Peak Off-State Current	IDRM	Ð	Ð	10	μA
(60 Hz Sine Wave, VD = 90 V)
Forward ªOnº Voltage	VTM	Ð	1.1	1.5	Volts
(ITM = 1 A Peak)
Dynamic Holding Current	IH	Ð	Ð	100	mA
Switching Resistance	RS	0.1	Ð	Ð	kΩ
Maximum Rate of Change of On-State Current	di/dt	Ð	50	Ð	A/μs

										CURRENT DERATING
°C)
(	130
ALLOWABLE CASE TEMPERATURE	130
	120											MAXIMUMALLOWABLE AMBIENT
									α				TEMPERATURE (°C)	140								α
	110							α = Conduction Angle						120							α = Conduction Angle
								α = Conduction Angle													α = Conduction Angle
								Tj Rated = 125°C						100							Tj Rated = 125°C
	100													80				α = 180°
														60				α = 180°
														60
	90													40
MAXIMUM	90											A		40
												A
									α = 180°			T		20
	80								α = 180°					0

C
C	0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0			0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0
T	0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0			0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0
			IT(AV), AVERAGE ON-STATE CURRENT (AMPS)													IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 1. Maximum Case Temperature

Figure 2. Maximum Ambient Temperature

I T , INSTANTANEOUS ON-STATE CURRENT (AMPS)

1.0						(WATTS)	1.25				α = 180°
0.8			25°C	125°C		DISSIPATION					α = 180°
						DISSIPATION

0.6							1.0
0.6									α
						POWER			α
0.4						POWER	0.75	α = Conduction Angle
0.4							0.75

0.3						AVERAGE		Tj Rated = 125°C
						AVERAGE	0.50
							0.50
0.2						MAXIMUM,
0.1						MAXIMUM,	0
							0.25
0.8	0.9	1.0	1.1	1.2	1.3	AV	0	0.2	0.4	0.6	0.8	1.0
	VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)					P		IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
	VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)							IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

Figure 3. Typical Forward Voltage

Figure 4. Power Dissipation

2	Motorola Thyristor Device Data

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

MKP3V110 MKP3V120

MKP3V130

THERMAL CHARACTERISTICS

1.0

0.5

ZθJL(t) = RθJL •r(t)

LEAD

LENGTH

= 1/4″

TJL = Ppk RθJL[r(t)]

0.3

TIME

where:

0.2

TJL = the increase in junction temperature above the lead

The

temperature

of the lead

should be

measured using a

temperature

r(t) = normalized value of transient thermal resistance at time,

thermocouple

placed

on the lead

as close

as possible to the

0.1

tie

point. The thermal

mass connected to

the tie point is nor-

t from this figure. For example,

r(tp) = normalized value of

mally large enough

so that it will not significantly respond to

heat surges generated in the diode as a result of pulsed op-

0.05

transient resistance at time tp.

eration once steady-state conditions are achieved. Using the

0.03

measured value of TL, the junction temperature may be de-

termined by:

0.02

TJ = TL + DTJL

0.01

0.2

0.5

1.0

2.0

5.0

100

200

500

1.0 k

2.0 k

5.0 k

10 k

20 k

t, TIME (ms)

Figure 5. Thermal Response

TYPICAL CHARACTERISTICS

I(BO), BREAKOVER CURRENT (μA)

100
90
80
70
60
50
40
30
20
10
0
±60	±40	±20	0	20	40	60	80	100	120	140
			TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Breakover Current

I H , HOLDING CURRENT (mA)

250
225
200
175
150
125
100
75
50
25
0			0
±60	±40	±20	0	20	40	60	80	100	120	140
			TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Holding Current

ITM	VTM	Slope = RS
		Slope = RS
IH
		IS
	IDRM	VS
	IDRM	I(BO)
		I(BO)
	VDRM	V(BO)
	(V(BO) *VS )
	RS + (IS *I(BO) )
Figure 8. V-1 Characteristics

Motorola Thyristor Device Data

MKP3V110 MKP3V120 MKP3V130

PACKAGE DIMENSIONS

K	STYLE 1:
	PIN 1.	CATHODE
	2.	ANODE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.370	0.380	9.40	9.65
B	0.190	0.210	4.83	5.33
D	0.048	0.052	1.22	1.32
K	1.000	±±±	25.40	±±±

CASE 267±03

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

◊	MKP3V110/D

*MKP3V110/D*

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