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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6027/D

2N6027 Programmable 2N6028 Unijunction Transistors

Silicon Programmable Unijunction Transistors

. . . designed to enable the engineer to ªprogramº unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor-trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO-92 plastic package for high-volume requirements, this package is readily adaptable for use in automatic insertion equipment.

•Programmable Ð R BB, η, IV and IP.

•Low On-State Voltage Ð 1.5 Volts Maximum @ I F = 50 mA

•Low Gate to Anode Leakage Current Ð 10 nA Maximum

•High Peak Output Voltage Ð 11 Volts Typical

•Low Offset Voltage Ð 0.35 Volt Typical (R G = 10 k ohms)

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

PUTs

40 VOLTS

300 mW

A K

G K

CASE 29-04 (TO-226AA)

STYLE 16

Rating	Symbol	Value	Unit

*Power Dissipation	PF	300	mW
Derate Above 25°C	1/θJA	4	mW/°C
*DC Forward Anode Current	IT	150	mA
Derate Above 25°C		2.67	mA/°C

*DC Gate Current	IG	±50	mA
Repetitive Peak Forward Current	ITRM		Amps
100 μs Pulse Width, 1% Duty Cycle		1
*20 μs Pulse Width, 1% Duty Cycle		2

Non-repetitive Peak Forward Current	ITSM	5	Amps
10 μs Pulse Width

*Gate to Cathode Forward Voltage	VGKF	40	Volts
*Gate to Cathode Reverse Voltage	VGKR	±5	Volts
*Gate to Anode Reverse Voltage	VGAR	40	Volts
*Anode to Cathode Voltage(1)	V	±40	Volts
	AK
Operating Junction Temperature Range	TJ	±50 to +100	°C
*Storage Temperature Range	Tstg	±55 to +150	°C

*Indicates JEDEC Registered Data

1. Anode positive, RGA = 1000 ohms Anode negative, RGA = open

Motorola, Inc. 1995

2N6027	2N6028
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

	Characteristic		Fig. No.	Symbol	Min	Typ	Max	Unit

*Peak Current			2,9,11	IP				μA
(VS = 10 Vdc, RG = 1 MΩ)		2N6027			Ð	1.25	2
		2N6028			Ð	0.08	0.15
(VS = 10 Vdc, RG = 10 k ohms)		2N6027			Ð	4	5
		2N6028			Ð	0.70	1

*Offset Voltage			1	VT				Volts
(VS = 10 Vdc, RG = 1 MΩ)		2N6027			0.2	0.70	1.6
		2N6028			0.2	0.50	0.6
(VS = 10 Vdc, RG = 10 k ohms)		(Both Types)			0.2	0.35	0.6
*Valley Current			1,4,5	IV				μA
(VS = 10 Vdc, RG = 1 MΩ)		2N6027			Ð	18	50
		2N6028			Ð	18	25
(VS = 10 Vdc, RG = 10 k ohms)		2N6027			70	150	Ð
		2N6028			25	150	Ð
(VS = 10 Vdc, RG = 200 ohms)		2N6027			1.5	Ð	Ð	mA
		2N6028			1	Ð	Ð

*Gate to Anode Leakage Current			Ð	IGAO				nAdc
(VS = 40 Vdc, TA = 25°C, Cathode Open)					Ð	1	10
(VS = 40 Vdc, TA = 75°C, Cathode Open)					Ð	3	Ð
Gate to Cathode Leakage Current			Ð	IGKS	Ð	5	50	nAdc
(VS = 40 Vdc, Anode to Cathode Shorted)
*Forward Voltage (IF = 50 mA Peak)			1,6	VF	Ð	0.8	1.5	Volts
*Peak Output Voltage			3,7	Vo	6	11	Ð	Volt
(VG = 20 Vdc, CC = 0.2 μF)
Pulse Voltage Rise Time			3	tr	Ð	40	80	ns
(VB = 20 Vdc, CC = 0.2 μF)
*Indicates JEDEC Registered Data.

FIGURE 1 ± ELECTRICAL CHARACTERIZATION

IA	+VB			IA	R1 R2
				RG +	R1 R2
	A	R2		RG +	R1 )R2
	G		R1	+
		*VS +	R1	VB
		*VS +	R1 )R2	VB
			R1 )R2	RG
VAK		R1		RG
VAK		R1		VAK	VS
	K				VS
	K
1A ± Programmable Unijunction				1B ± Equivalent Test Circuit for
1A ± Programmable Unijunction				Figure 1A used for electrical
with ªProgramº Resistors				Figure 1A used for electrical
with ªProgramº Resistors				characteristics testing
R1 and R2				characteristics testing
R1 and R2				(also see Figure 2)
				(also see Figure 2)

		VA
		± VP
		VS	VT = VP ± VS
			VT = VP ± VS
		VF
		VV		IA
I		IP	IV	IA
I	GAO	IP	IV	IF
	GAO
			IC ± Electrical Characteristics

FIGURE 2 ± PEAK CURRENT (IP) TEST CIRCUIT					FIGURE 3 ± Vo AND tr TEST CIRCUIT
		Ð			+VB
		Ð					+V
Adjust	100k	IP (SENSE)					+V
Adjust	100k	IP (SENSE)
for	1.0%	100 μV = 1.0 nA			510 k		Vo
Turn-on		+			510 k	16 k
Turn-on		+				16 k
Threshold							6 V
		2N5270					6 V
		2N5270	R
			R
VB		μ	RG = R/2	CC	vo
		μ	VS = VB/2	CC		27 k
		0.01 F	VS = VB/2			27 k
Scope			(See Figure 1)		20 Ω		0.6 V	t
Scope					20 Ω		0.6 V	t
	20	Put					tr
	20	Under	R
		Test	R
		Test

2	Motorola Thyristor Device Data

2N6027 2N6028

TYPICAL VALLEY CURRENT BEHAVIOR

1000

(μ A)
CURRENTVALLEY,	100
	100
V
I
	10

FIGURE 4 ± EFFECT OF SUPPLY VOLTAGE						FIGURE 5 ± EFFECT OF TEMPERATURE
					500
		RG = 10 kΩ		(μA)						RG = 10 kΩ
				CURRENT	100					RG = 10 kΩ
				CURRENT

		100 kΩ		VALLEY,
				VALLEY,						100 kΩ
										100 kΩ
		1 MΩ		V						1 MΩ
		1 MΩ		I	10


5	10	15	20		5
5	10	15	20		±50	±25	0	+25	+50	+75	+100
	VS, SUPPLY VOLTAGE (VOLTS)						TA, AMBIENT TEMPERATURE (°C)

VF , PEAK FORWARD VOLTAGE (VOLTS)

FIGURE 6 ± FORWARD VOLTAGE

10
5.0		TA	=	25°C
2.0


1.0



0.5



0.2


0.1


0.05



0.02


0.01
0.01
0.01	0.02			0.05	0.1	0.2	0.5	1.0	2.0	5.0
				IF, PEAK FORWARD CURRENT (AMP)

Vo , PEAK OUTPUT VOLTAGE (VOLTS)

FIGURE 7 ± PEAK OUTPUT VOLTAGE

25
25			TA =	25°C					CC =	0.2 μF
			TA =	25°C					CC =	0.2 μF
		(SEE FIGURE 3)
20
20
15


10

										1000 pF
										1000 pF
5.0
5.0
0


0	5.0		10		15	20	25	30	35		40

VS, SUPPLY VOLTAGE (VOLTS)

FIGURE 8

PROGRAMMABLE UNIJUNCTION

Circuit Symbol

A	B2			+
	B2

E	R2	RT		R2
	R2	RT		R2
P	G	RBB + R1 ) R2	A	G
N	G	R1
N	η +	R1
P		R1 ) R2		R1
P	R1
N	R1	CC
N		CC
K				K
K
	B1
	Equivalent Circuit		Typical Application
	with External ªProgramº		Typical Application
	with External ªProgramº
	Resistors R1 and R2

Motorola Thyristor Device Data

2N6027 2N6028

TYPICAL PEAK CURRENT BEHAVIOR

2N6027

FIGURE 9 ± EFFECT OF SUPPLY VOLTAGE AND RG

	10
(μA)	5.0			(μA)
(μA)	3.0			(μA)
CURRENT	3.0	RG = 10 kΩ		CURRENT
CURRENT	2.0	RG = 10 kΩ		CURRENT
	2.0
	1.0
PEAK	0.5	100 kΩ		PEAK
,			T = 25°C	,
P	0.3	1.0 MΩ	T = 25°C	P
I	0.3	1.0 MΩ	A	I
	0.2		(SEE FIGURE 2)
	0.2
	0.1
	5.0	10	15	20
		VS, SUPPLY VOLTAGE (VOLTS)

FIGURE 10 ± EFFECT OF TEMPERATURE AND RG

100

50
20	VS = 10 VOLTS
10	(SEE FIGURE 2)
10
5.0
2.0
1.0	RG = 10 kΩ

0.5100 kΩ

0.2		1.0 MΩ
0.2
0.1
±50	±25	0	+25	+50	+75	+100

TA, AMBIENT TEMPERATURE (°C)

I P , PEAK CURRENT (μA)

			2N6028
FIGURE 11 ± EFFECT OF SUPPLY VOLTAGE AND RG
1.0
0.7
0.5	RG = 10 kΩ
0.3	RG = 10 kΩ		A)
0.3	100 kΩ		(μ
			(μ
0.2			CURRENT
			CURRENT

0.1
0.07			PEAK,
0.05	1.0 MΩ		PEAK,
0.05
0.03			P
			P
		TA = 25°C	I
0.02		TA = 25°C
0.02		(SEE FIGURE 2)
		(SEE FIGURE 2)
0.01
5.0	10	15	20
	VS, SUPPLY VOLTAGE (VOLTS)

FIGURE 12 ± EFFECT OF TEMPERATURE AND RG

10
50	VS = 10 VOLTS
	VS = 10 VOLTS
2.0	(SEE FIGURE 2)
1.0
0.5

0.2RG = 10 kΩ

0.1	100 kΩ
	100 kΩ
0.05	1.0 MΩ
	1.0 MΩ
0.02
0.01

±50	±25	0	+25	+50	+75	+100
		TA, AMBIENT TEMPERATURE (°C)

4	Motorola Thyristor Device Data

2N6027 2N6028

PACKAGE DIMENSIONS

	A		B
			B
R			STYLE 16:
			STYLE 16:
	P		PIN 1.	ANODE
	P		2.	GATE
	L		2.	GATE
	L		3.	CATHODE
SEATING	F	K	3.	SOURCE
PLANE		K

	X X	D
	X X	G
		G
	H	J
	V	C
	1	SECTION X±X
	1	N
		N

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.175	0.205	4.45	5.20
B	0.170	0.210	4.32	5.33
C	0.125	0.165	3.18	4.19
D	0.016	0.022	0.41	0.55
F	0.016	0.019	0.41	0.48
G	0.045	0.055	1.15	1.39
H	0.095	0.105	2.42	2.66
J	0.015	0.020	0.39	0.50
K	0.500	±±±	12.70	±±±
L	0.250	±±±	6.35	±±±
N	0.080	0.105	2.04	2.66
P	±±±	0.100	±±±	2.54
R	0.115	±±±	2.93	±±±
V	0.135	±±±	3.43	±±±

CASE 029±04 (TO±226AA)

Motorola Thyristor Device Data

2N6027 2N6028

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

◊

2N6027/D

*2N6027/D*

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