MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMDF1N05E/D
Medium Power Surface Mount Products |
MMDF1N05E |
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TMOS Dual N-Channel |
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Field Effect Transistors |
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MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola's TMOS process. These miniature surface
mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain±to±source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc±dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the G 
guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
•Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
•Logic Level Gate Drive Ð Can Be Driven by Logic ICs
•Miniature SO±8 Surface Mount Package Ð Saves Board Space
•Diode Is Characterized for Use In Bridge Circuits
•Diode Exhibits High Speed
•Avalanche Energy Specified
•Mounting Information for SO±8 Package Provided
•IDSS Specified at Elevated Temperature
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
DUAL TMOS MOSFET
50 VOLTS
1.5 AMPERE
RDS(on) = 0.30 OHM
D 
CASE 751±05, Style 11
SO±8
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Source±1 |
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1 |
8 |
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Drain±1 |
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2 |
7 |
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Gate±1 |
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Drain±1 |
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Source±2 |
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3 |
6 |
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Drain±2 |
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Gate±2 |
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4 |
5 |
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Drain±2 |
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Top View
Rating |
Symbol |
Value |
Unit |
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Drain±to±Source Voltage |
VDS |
50 |
Volts |
Gate±to±Source Voltage Ð Continuous |
VGS |
± 20 |
Volts |
Drain Current Ð Continuous |
ID |
2.0 |
Amps |
Drain Current Ð Pulsed |
IDM |
10 |
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Single Pulse Drain±to±Source Avalanche Energy Ð Starting T J = 25°C |
EAS |
300 |
mJ |
(VDD = 25 V, VGS = 10 V, IL = 2 Apk) |
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Operating and Storage Temperature Range |
TJ, Tstg |
± 55 to 150 |
°C |
Total Power Dissipation @ TA = 25°C |
PD |
2.0 |
Watts |
Thermal Resistance ± Junction to Ambient (1) |
RqJA |
62.5 |
°C/W |
Maximum Temperature for Soldering, |
TL |
260 |
°C |
Time in Solder Bath |
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10 |
Sec |
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DEVICE MARKING
F1N05
(1) Mounted on 2º square FR4 board (1º sq. 2 oz. Cu 0.06º thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device |
Reel Size |
Tape Width |
Quantity |
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MMDF1N05ER2 |
13″ |
12 mm embossed tape |
2500 |
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MiniMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
REV 5
Motorola, Inc. 1996
MMDF1N05E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic |
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Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Drain±to±Source Breakdown Voltage |
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V(BR)DSS |
50 |
Ð |
Ð |
Vdc |
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(VGS = 0, ID = 250 μA) |
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Zero Gate Voltage Drain Current |
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IDSS |
Ð |
Ð |
250 |
μAdc |
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(VDS = 50 V, VGS = 0) |
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Gate±Body Leakage Current |
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IGSS |
Ð |
Ð |
100 |
nAdc |
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(VGS = 20 Vdc, VDS = 0) |
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ON CHARACTERISTICS(1) |
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Gate Threshold Voltage |
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VGS(th) |
1.0 |
Ð |
3.0 |
Vdc |
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(VDS = VGS, ID = 250 μAdc) |
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Drain±to±Source On±Resistance |
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Ohms |
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(VGS = 10 Vdc, ID = 1.5 Adc) |
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RDS(on) |
Ð |
Ð |
0.30 |
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(VGS = 4.5 Vdc, ID = 0.6 Adc) |
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RDS(on) |
Ð |
Ð |
0.50 |
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Forward Transconductance (VDS = 15 V, ID = 1.5 A) |
gFS |
Ð |
1.5 |
Ð |
mhos |
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DYNAMIC CHARACTERISTICS |
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Input Capacitance |
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(VDS = 25 V, VGS = 0, |
Ciss |
Ð |
330 |
Ð |
pF |
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Output Capacitance |
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Coss |
Ð |
160 |
Ð |
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f = 1.0 MHz) |
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Reverse Transfer Capacitance |
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Crss |
Ð |
50 |
Ð |
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SWITCHING CHARACTERISTICS(2) |
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Turn±On Delay Time |
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td(on) |
Ð |
Ð |
20 |
ns |
Rise Time |
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(VDD = 10 V, ID = 1.5 A, RL = 10 Ω, |
tr |
Ð |
Ð |
30 |
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Turn±Off Delay Time |
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VG = 10 V, RG = 50 Ω) |
td(off) |
Ð |
Ð |
40 |
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Fall Time |
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tf |
Ð |
Ð |
25 |
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Total Gate Charge |
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(VDS = 10 V, ID = 1.5 A, |
Qg |
Ð |
12.5 |
Ð |
nC |
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Gate±Source Charge |
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Qgs |
Ð |
1.9 |
Ð |
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VGS = 10 V) |
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Gate±Drain Charge |
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Qgd |
Ð |
3.0 |
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SOURCE±DRAIN DIODE CHARACTERISTICS (TC = 25°C) |
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Forward Voltage(1) |
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(I |
= 1.5 A, V = 0 V) |
VSD |
Ð |
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1.6 |
V |
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S |
GS |
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Reverse Recovery Time |
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(dIS/dt = 100 A/μs) |
trr |
Ð |
45 |
Ð |
ns |
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(1)Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
(2)Switching characteristics are independent of operating junction temperature.
2 |
Motorola TMOS Power MOSFET Transistor Device Data |
MMDF1N05E
TYPICAL ELECTRICAL CHARACTERISTICS
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10 |
6 V |
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TJ = 25°C |
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10 V |
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5 V |
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8 V |
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(AMPS) |
8 |
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4.5 V |
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CURRENT |
6 |
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4 V |
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, DRAIN |
4 |
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V |
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= 3.5 V |
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I |
2 |
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GS |
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0 |
2 |
4 |
6 |
8 |
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10 |
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0 |
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VDS, DRAIN±TO±SOURCE VOLTAGE (VOLTS) |
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Figure 1. On±Region Characteristics
(OHMS) |
0.5 |
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ON±RESISTANCE |
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VGS = 10 V |
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0.4 |
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DRAIN±TO±SOURCE, |
0.3 |
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0.2 |
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± 55°C |
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100°C |
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25°C |
DS(on) |
0.1 |
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0 |
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0 |
2 |
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6 |
8 |
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R |
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ID, DRAIN CURRENT (AMPS)
Figure 3. On±Resistance versus Drain Current
(OHMS) |
0.5 |
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RESISTANCE |
0.4 |
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ID = 1.5 A |
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VGS = 0 |
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0.3 |
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, DRAIN±TO±SOURCE |
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0.2 |
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0.1 |
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DS(on) |
0 |
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4 |
5 |
6 |
7 |
8 |
9 |
10 |
R |
2 |
3 |
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TJ, JUNCTION TEMPERATURE |
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Figure 5. On Resistance versus
Gate±To±Source Voltage
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10 |
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± 55°C |
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VDS ≥ |
10 V |
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25°C |
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(AMPS) |
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8 |
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100°C |
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CURRENT |
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6 |
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DRAIN, |
4 |
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25°C |
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D |
2 |
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I |
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100°C |
± 55°C |
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0 |
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0 |
1 |
2 |
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VGS, GATE±TO±SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ON±RESISTANCE |
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1.8 |
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1.6 |
VGS = 10 V |
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1.4 |
ID = 1.5 A |
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(NORMALIZED) |
1.2 |
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DRAIN±TO±SOURCE |
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1 |
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0.8 |
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0.6 |
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0.4 |
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, |
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DS(on) |
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0.2 |
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R |
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± 25 |
0 |
25 |
50 |
75 |
100 |
125 |
150 |
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± 50 |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 4. On±Resistance Variation with Temperature
(NORMALIZED) |
1.1 |
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VDS = VGS |
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1.2 |
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VOLTAGE |
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ID = 1 mA |
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1 |
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THRESHOLD |
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0.9 |
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GATE, |
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0.8 |
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GS(th) |
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0.7 |
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± 25 |
0 |
25 |
50 |
75 |
100 |
125 150 |
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V |
± 50 |
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TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Voltage Variation
with Temperature
Motorola TMOS Power MOSFET Transistor Device Data |
3 |
MMDF1N05E |
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1200 |
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VGS |
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0 |
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VDS |
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Ciss |
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1000 |
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Crss |
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TJ = 25°C |
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(pF) |
800 |
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CAPACITANCE |
600 |
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VDS = 0 |
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VGS = 0 |
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400 |
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Ciss |
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C, |
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Coss |
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200 |
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Crss |
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0 |
15 |
10 |
5 |
0 |
5 |
10 |
15 |
20 |
25 |
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20 |
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GATE±TO±SOURCE OR DRAIN±TO±SOURCE VOLTAGE (VOLTS) |
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Figure 7. Capacitance Variation
SAFE OPERATING AREA INFORMATION
Forward Biased Safe Operating Area
The FBSOA curves define the maximum drain±to±source voltage and drain current that a device can safely handle when it is forward biased, or when it is on, or being turned on. Because these curves include the limitations of simultaneous high voltage and high current, up to the rating of the device, they are especially useful to designers of linear systems. The curves are based on a case temperature of 25°C and a maximum junction temperature of 150°C. Limitations for repetitive pulses at various case temperatures can be determined by using the thermal response curves. Motorola Application Note, AN569, ªTransient Thermal Resistance Ð G eneral Data and Its Useº provides detailed instructions.
(VOLTS) |
12 |
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10 |
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VDS = 25 V |
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VOLTAGE |
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ID = 1.2 A |
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8 |
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GATE±TO±SOURCE |
6 |
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4 |
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2 |
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GS |
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V |
0 |
0 |
2 |
4 |
6 |
8 |
10 |
12 |
14 |
16 |
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Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate Charge versus
Gate±To±Source Voltage
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100 |
VGS = 20 V |
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Mounted on 2º sq. FR4 board (1º sq. 2 oz. Cu 0.06º |
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thick single sided) with one die operating, 10s max. |
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SINGLE PULSE |
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(AMPS) |
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10 μs |
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10 |
TC = 25°C |
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CURRENT |
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dc |
100 μs |
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10 ms |
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1 |
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, DRAIN |
0.1 |
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D |
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RDS(on) LIMIT |
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THERMAL LIMIT |
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0.01 |
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PACKAGE LIMIT |
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0.1 |
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1 |
10 |
100 |
VDS, DRAIN±TO±SOURCE VOLTAGE (VOLTS)
Figure 9. Maximum Rated Forward Biased
Safe Operating Area
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10 |
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Rthja(t), EFFECTIVE TRANSIENT |
THERMAL RESISTANCE |
1 |
D = 0.5 |
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0.2 |
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0.1 |
0.1 |
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Normalized to θja at 10s. |
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0.05 |
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0.02 |
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Chip |
0.0175 Ω |
0.0710 Ω |
0.2706 Ω |
0.5776 Ω |
0.7086 Ω |
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0.01 |
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0.01 |
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SINGLE PULSE |
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0.0154 F |
0.0854 F |
0.3074 F |
1.7891 F |
107.55 F |
Ambient |
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0.001 |
1.0E±04 |
1.0E±03 |
1.0E±02 |
1.0E±01 |
1.0E+00 |
1.0E+01 |
1.0E+02 |
1.0E+03 |
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1.0E±05 |
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t, TIME (s)
Figure 10. Thermal Response
4 |
Motorola TMOS Power MOSFET Transistor Device Data |
MMDF1N05E
INFORMATION FOR USING THE SO±8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface
between the board and the package. With the correct pad geometry, the packages will self±align when subjected to a solder reflow process.
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0.060 |
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1.52 |
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0.275 |
0.155 |
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7.0 |
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4.0 |
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0.024 |
0.050 |
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0.6 |
1.270 |
inches
mm
SO±8 POWER DISSIPATION
The power dissipation of the SO±8 is a function of the input pad size. These can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the
device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the SO±8 package, PD can be calculated as follows:
PD = |
TJ(max) ± TA |
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RθJA |
||
|
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 2.0 Watts.
PD = 150°C ± 25°C = 2.0 Watts
62.5°C/W
The 62.5°C/W for the SO±8 package assumes the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 2.0 Watts using the footprint shown. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using board material such as Thermal Clad, the power dissipation can be doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected.
•Always preheat the device.
•The delta temperature between the preheat and soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.
•The soldering temperature and time shall not exceed 260°C for more than 10 seconds.
•When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.
•After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied during cooling
* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
Motorola TMOS Power MOSFET Transistor Device Data |
5 |
MMDF1N05E
PACKAGE DIMENSIONS
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±A± |
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M |
J |
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1 |
4XP |
B |
RX 45 |
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(0.010)M |
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8 |
5 |
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±B± |
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4 |
0.25 |
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G |
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M |
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F |
±T± |
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C |
SEATING |
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PLANE |
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K |
8X D |
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0.25 (0.010) M T B S |
A S |
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CASE 751±05
SO±8
ISSUE P
NOTES:
1.DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE.
2.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
3.DIMENSIONS ARE IN MILLIMETER.
4.DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.
5.MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6.DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
|
MILLIMETERS |
|
DIM |
MIN |
MAX |
A |
4.80 |
5.00 |
B |
3.80 |
4.00 |
C |
1.35 |
1.75 |
D |
0.35 |
0.49 |
F |
0.40 |
1.25 |
G |
1.27 BSC |
|
J |
0.18 |
0.25 |
K |
0.10 |
0.25 |
M |
0 |
7 |
P |
5.80 |
6.20 |
R |
0.25 |
0.50 |
STYLE 11:
PIN 1. SOURCE 1
2.GATE 1
3.SOURCE 2
4.GATE 2
5.DRAIN 2
6.DRAIN 2
7.DRAIN 1
8.DRAIN 1
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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