MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP20N35CL/D
Advanced Information
SMARTDISCRETES
Internally Clamped, N-Channel
IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate±Emitter ESD protection, Gate±Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver.
•Temperature Compensated Gate±Drain Clamp Limits Stress Applied to Load
•Integrated ESD Diode Protection
•Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
•Low Saturation Voltage
•High Pulsed Current Capability
G
C |
Rge |
E
MGP20N35CL
20 AMPERES
VOLTAGE CLAMPED N±CHANNEL IGBT
Vce(on) = 1.8 VOLTS 350 VOLTS (CLAMPED)
G
C
E
CASE 221A±06, Style 9
TO±220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating |
Symbol |
|
Value |
Unit |
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Collector±Emitter Voltage |
VCES |
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CLAMPED |
Vdc |
Collector±Gate Voltage |
VCGR |
|
CLAMPED |
Vdc |
Gate±Emitter Voltage |
VGE |
|
CLAMPED |
Vdc |
Collector Current Ð Continuous @ T C = 25°C |
IC |
|
20 |
Adc |
Reversed Collector Current ± pulse width t 100 ms |
ICR |
|
12 |
Apk |
Total Power Dissipation @ TC = 25°C (TO±220) |
PD |
|
150 |
Watts |
Electrostatic Voltage Ð Gate±Emitter |
ESD |
|
3.5 |
kV |
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Operating and Storage Temperature Range |
TJ, Tstg |
|
± 55 to 175 |
°C |
THERMAL CHARACTERISTICS |
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Thermal Resistance Ð Junction to Case ± (TO±220) |
RqJC |
|
1.0 |
°C/W |
Thermal Resistance Ð Junction to Ambient |
RqJA |
|
62.5 |
|
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds |
TL |
|
275 |
°C |
Mounting Torque, 6±32 or M3 screw |
|
10 lbf in (1.13 N m) |
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UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS |
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Single Pulse Collector±Emitter Avalanche Energy |
EAS |
|
|
mJ |
@ Starting TJ = 25°C |
|
|
550 |
|
@ Starting TJ = 150°C |
|
|
150 |
|
SMARTDISCRETES and TMOS are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Motorola, Inc. 1995
MGP20N35CL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic |
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Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±to±Emitter Breakdown Voltage |
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BVCES |
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Vdc |
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(IClamp = 10 mA, TJ = ±40 to 150°C) |
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320 |
350 |
380 |
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Zero Gate Voltage Collector Current |
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ICES |
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(VCE = 250 V, VGE = 0 V, TJ = 125°C) |
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Ð |
Ð |
1.0 |
mA |
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(VCE = 15 V, VGE = 0 V, TJ = 125°C) |
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Ð |
Ð |
200 |
mA |
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Resistance Gate±Emitter (TJ = ±40 to 150°C) |
|
RGE |
10k |
16k |
30k |
W |
|||
Gate±Emitter Breakdown Voltage (IG = 2 mA) |
|
BVGES |
11 |
13 |
15 |
"V |
|||
Collector±Emitter Reverse Leakage (VCE = ±15 V, TJ = ±40 to 150°C) |
ICES |
Ð |
8 |
100 |
mA |
||||
Collector±Emitter Reversed Breakdown Voltage (IE = 75 mA) |
BVCER |
26 |
40 |
120 |
V |
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ON CHARACTERISTICS (1) |
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Gate Threshold Voltage |
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VGE(th) |
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V |
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(VCE = VGE, IC = 1 mA) |
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1.0 |
1.7 |
2.4 |
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(VCE = VGE, IC = 1 mA, TJ = 150°C) |
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0.75 |
Ð |
1.8 |
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Collector±Emitter On±Voltage |
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VCE(on) |
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V |
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(VGE = 5 V, IC = 5 A) |
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Ð |
1.1 |
1.4 |
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(VGE = 5 V, IC = 10 A) |
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Ð |
1.4 |
1.9 |
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(VGE = 5 V, IC = 10 Adc, TJ = 150°C) |
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Ð |
1.4 |
1.8 |
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Forward Transconductance (VCE u 50 V, IC = 10 A) |
gfs |
10 |
16 |
Ð |
S |
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DYNAMIC CHARACTERISTICS |
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Input Capacitance |
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(VCE = 25 Vdc, VGE = 0 Vdc, |
Ciss |
Ð |
2800 |
Ð |
pF |
||
Output Capacitance |
|
Coss |
Ð |
200 |
Ð |
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f = 1.0 MHz) |
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Transfer Capacitance |
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Crss |
Ð |
25 |
Ð |
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SWITCHING CHARACTERISTICS (1) |
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Total Gate Charge |
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(VCC = 280 V, IC = 20 A, |
Qg |
Ð |
45 |
80 |
nC |
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Gate±Emitter Charge |
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Qgs |
Ð |
8.0 |
Ð |
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V = 5 V) |
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GE |
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Gate±Collector Charge |
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Qgd |
Ð |
20 |
Ð |
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Turn±Off Delay Time |
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(VCC = 320 V, IC = 20 A, |
td(off) |
Ð |
TBD |
TBD |
μs |
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Fall Time |
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|
L = 200 mH, RG = 1 KW) |
t |
Ð |
TBD |
TBD |
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f |
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Turn±On Delay Time |
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(V |
= 14 V, I = 20 A, |
td(on) |
Ð |
TBD |
TBD |
μs |
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CC |
C |
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Rise Time |
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L = 200 mH, RG = 1 KW) |
t |
Ð |
TBD |
TBD |
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r |
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(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. |
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2 |
Motorola TMOS Power MOSFET Transistor Device Data |
MGP20N35CL
TYPICAL ELECTRICAL CHARACTERISTICS
|
40 |
VGE = 10 V |
5 V |
|
° |
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TJ = 25 C |
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(AMPS) |
30 |
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CURRENT |
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4 V |
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20 |
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, COLLECTOR |
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10 |
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C |
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3 V |
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I |
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0 |
2 |
4 |
6 |
8 |
10 |
|
0 |
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VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
|
|||
Figure 1. Output Characteristics, TJ = 25°C
|
40 |
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(AMPS) |
|
VCE = 10 V |
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30 |
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CURRENT |
20 |
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COLLECTOR, |
10 |
|
TJ = 125°C |
25°C |
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C |
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I |
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0 |
2 |
3 |
4 |
5 |
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1 |
VGE, GATE±TO±EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
|
40 |
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TJ = 125°C |
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VGE = 10 V |
|
5 V |
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(AMPS) |
30 |
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4 V |
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CURRENT |
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20 |
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, COLLECTOR |
10 |
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3 V |
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C |
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I |
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0 |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
9 |
10 |
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0 |
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VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
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Figure 2. Output Characteristics, TJ = 125°C |
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(VOLTS) |
2.2 |
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VGE = 5 V |
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VOLTAGE |
2.0 |
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IC = 20 A |
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1.8 |
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, COLLECTOR±TO±EMITTER |
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15 A |
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1.6 |
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1.4 |
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10 A |
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1.2 |
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1.0 |
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CE |
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±50 |
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0 |
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50 |
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100 |
|
150 |
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V |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 4. Collector±to±Emitter Saturation
Voltage versus Junction Temperature
|
10000 |
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TJ = 25°C |
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V |
CE |
= 0 V |
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Ciss |
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(pF) |
1000 |
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(pF) |
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CAPACITANCEC, |
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Crss |
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CAPACITANCEC, |
|
100 |
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Coss |
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10 |
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1.0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
200 |
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0 |
|||||||||
1000
VCE = 0 V
100
10
1.0
10
TJ = 25°C
Ciss
Coss
Crss
100 |
1000 |
COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
DRAIN±TO±SOURCE VOLTAGE (VOLTS) |
Figure 5. Capacitance Variation |
Figure 6. High Voltage Capacitance Variation |
Motorola TMOS Power MOSFET Transistor Device Data |
3 |
MGP20N35CL |
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(VOLTS) |
8 |
|
Qg |
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VOLTAGE |
6 |
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Qgs |
Qgd |
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GATE±TO±EMITTER |
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4 |
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2 |
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TJ = 25°C |
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IC = 20 A |
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, |
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GE |
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V |
0 |
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10 |
20 |
30 |
40 |
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0 |
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Qg, TOTAL GATE CHARGE (nC)
(mJ) |
60 |
VDD = 320 V |
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60 |
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SWITCHING ENERGY LOSSES |
50 |
VGE = 5 V |
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|
50 |
TJ = 125°C |
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40 |
IC = 20 A |
|
Eoff |
Td(off) |
40 |
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30 |
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30 |
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20 |
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20 |
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TIMESWITCHINGS)m( |
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TOTAL |
10 |
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TF |
|
10 |
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0 |
1000 |
2000 |
3000 |
4000 |
0 |
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0 |
5000 |
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RG, GATE RESISTANCE (OHMS) |
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Figure 7. Gate±to±Emitter and |
Figure 8. Total Switching Losses |
Collector±to±Emitter Voltage vs Total Charge |
versus Gate Temperature |
50 |
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6 |
|
26 |
VCC = 320 V |
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6 |
SWITCHINGTOTALENERGY LOSSES (mJ) |
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mS)(TIMESWITCHING |
24 |
VGE = 5 V |
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mS)(TIMESWITCHING |
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5 |
SWITCHINGTOTALENERGY LOSSES(mJ) |
RG = 1000 W |
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40 |
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Eoff |
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22 |
L = 200 mH |
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30 |
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4 |
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IC = 20 A |
Td(off) |
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Td(off) |
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20 |
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E |
off |
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3 |
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20 |
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VDD = 320 V |
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18 |
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TF |
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V |
= 5 V |
2 |
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GE |
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16 |
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TJ = 25°C |
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10 |
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IC = 20 A |
1 |
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14 |
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TF |
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0 |
1000 |
2000 |
3000 |
4000 |
0 |
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12 |
50 |
75 |
100 |
4 |
0 |
5000 |
|
25 |
125 |
|||||||
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RG, GATE RESISTANCE (OHMS) |
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TC, CASE TEMPERATURE (°C) |
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Figure 9. Total Switching Losses |
Figure 10. Total Switching Losses |
versus Gate Resistance |
versus Case Temperature |
|
25 |
VCC = 320 V |
|
25 |
|
20 |
(mJ) |
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VGE = 5 V |
Eoff |
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SWITCHINGENERGY LOSSES |
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16 |
||
20 |
RG = 1000 W |
20 |
LATCH CURRENT (AMPS) |
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L = 200 mH |
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TJ = 125°C |
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12 |
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15 |
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Td(off) |
15 |
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8.0 |
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10 |
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10 |
4.0 |
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S)TIMESWITCHINGm( |
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TOTAL |
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TF |
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5 |
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5 |
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0 |
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10 |
15 |
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5 |
20 |
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IC, COLLECTOR±TO±EMITTER CURRENT (AMPS) |
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3 mH |
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10 mH |
|
0 |
25 |
50 |
75 |
100 |
125 |
TEMPERATURE (°C)
Figure 11. Total Switching Losses |
Figure 12. Latch Current versus Temperature |
versus Collector Current |
|
4 |
Motorola TMOS Power MOSFET Transistor Device Data |
|
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MGP20N35CL |
||
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1.0 |
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D = 0.5 |
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0.2 |
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0.1 |
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0.1 |
0.05 |
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P(pk) |
RθJC(t) = r(t) RθJC |
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NORMALIZEDr(t),EFFECTIVE |
TRANSIENTRESISTANCETHERMAL |
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0.02 |
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D CURVES APPLY FOR POWER |
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PULSE TRAIN SHOWN |
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t1 |
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0.01 |
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READ TIME AT t1 |
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t2 |
T |
J(pk) |
± T |
= P |
Rθ |
(t) |
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DUTY CYCLE, D = t1/t2 |
|
C |
(pk) |
JC |
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SINGLE PULSE |
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0.01 |
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1.0E± 05 |
1.0E± 04 |
1.0E± 03 |
1.0E± 02 |
1.0E± 01 |
|
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1.0E+00 |
|
1.0E+01 |
||
t, TIME (s)
Figure 13. Thermal Response
PACKAGE DIMENSIONS
|
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±T± |
PLANESEATING |
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B |
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F |
C |
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T |
S |
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|
4 |
|
|
|
|
|
|
Q |
|
|
A |
|
|
|
1 |
2 |
3 |
U |
|
STYLE 9: |
|
|
PIN 1. |
GATE |
||||
H |
|
|
|
|
2. |
COLLECTOR |
|
|
|
|
3. |
EMITTER |
|
|
|
|
|
|
||
|
|
|
K |
|
4. |
COLLECTOR |
Z |
|
|
|
|
|
|
|
|
|
|
|
|
|
L |
|
|
|
R |
|
|
V |
|
|
|
J |
|
|
G |
|
|
|
|
|
|
|
|
|
D |
|
|
|
|
N |
|
|
|
|
|
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.570 |
0.620 |
14.48 |
15.75 |
B |
0.380 |
0.405 |
9.66 |
10.28 |
C |
0.160 |
0.190 |
4.07 |
4.82 |
D |
0.025 |
0.035 |
0.64 |
0.88 |
F |
0.142 |
0.147 |
3.61 |
3.73 |
G |
0.095 |
0.105 |
2.42 |
2.66 |
H |
0.110 |
0.155 |
2.80 |
3.93 |
J |
0.018 |
0.025 |
0.46 |
0.64 |
K |
0.500 |
0.562 |
12.70 |
14.27 |
L |
0.045 |
0.060 |
1.15 |
1.52 |
N |
0.190 |
0.210 |
4.83 |
5.33 |
Q |
0.100 |
0.120 |
2.54 |
3.04 |
R |
0.080 |
0.110 |
2.04 |
2.79 |
S |
0.045 |
0.055 |
1.15 |
1.39 |
T |
0.235 |
0.255 |
5.97 |
6.47 |
U |
0.000 |
0.050 |
0.00 |
1.27 |
V |
0.045 |
±±± |
1.15 |
±±± |
Z |
±±± |
0.080 |
±±± |
2.04 |
CASE 221A±06 (TO±220AB)
ISSUE Y
Motorola TMOS Power MOSFET Transistor Device Data |
5 |
MGP20N35CL
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