MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGW12N120D/D
Designer's Data Sheet
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
N±Channel Enhancement±Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co±packaged with a soft recovery ultra±fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage±blocking capability. Short circuit rated IGBT's are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co±packaged IGBT's save space, reduce assembly time and cost.
• Industry Standard High Power TO±247 Package with |
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Isolated Mounting Hole |
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• High Speed Eoff: 160 mJ per Amp typical at 125°C |
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• High Short Circuit Capability ± 10 ms minimum |
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• Soft Recovery Free Wheeling Diode is included in the package |
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• Robust High Voltage Termination |
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• Robust RBSOA |
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E |
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
MGW12N120D
Motorola Preferred Device
IGBT & DIODE IN TO±247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
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CASE 340F±03, Style 4 |
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TO±247AE |
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Rating |
Symbol |
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Value |
Unit |
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Collector±Emitter Voltage |
VCES |
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1200 |
Vdc |
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Collector±Gate Voltage (RGE = 1.0 MW) |
VCGR |
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1200 |
Vdc |
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Gate±Emitter Voltage Ð Continuous |
VGE |
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± 20 |
Vdc |
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Collector Current Ð |
Continuous @ T C = 25°C |
IC25 |
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20 |
Adc |
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Continuous @ T C = 90°C |
IC90 |
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12 |
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Ð Repetitive Pulsed Current (1) |
ICM |
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40 |
Apk |
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Total Power Dissipation @ TC = 25°C |
PD |
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123 |
Watts |
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Derate above 25°C |
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0.98 |
W/°C |
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Operating and Storage Junction Temperature Range |
TJ, Tstg |
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± 55 to 150 |
°C |
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Short Circuit Withstand Time |
tsc |
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10 |
ms |
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(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 W) |
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Thermal Resistance |
Ð Junction to Case ± IGBT |
RqJC |
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1.0 |
°C/W |
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Ð Junction to Case ± Diode |
RqJC |
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1.4 |
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Ð Junction to Ambient |
RqJA |
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45 |
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Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds |
TL |
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260 |
°C |
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Mounting Torque, 6±32 or M3 screw |
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10 lbfSin (1.13 NSm) |
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(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer's Data for ªWorst Caseº Conditions Ð The Designer' s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1996
MGW12N120D
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±to±Emitter Breakdown Voltage |
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BVCES |
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Vdc |
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(VGE = 0 Vdc, IC = 25 μAdc) |
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1200 |
Ð |
Ð |
mV/°C |
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Temperature Coefficient (Positive) |
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Ð |
870 |
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Zero Gate Voltage Collector Current |
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ICES |
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μAdc |
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(VCE = 1200 Vdc, VGE = 0 Vdc) |
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Ð |
Ð |
100 |
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(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C) |
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Ð |
2500 |
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Gate±Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) |
IGES |
Ð |
Ð |
250 |
nAdc |
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ON CHARACTERISTICS (1) |
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Collector±to±Emitter On±State Voltage |
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VCE(on) |
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Vdc |
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(VGE = 15 Vdc, IC = 5.0 Adc) |
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Ð |
2.71 |
3.37 |
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(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C) |
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3.78 |
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(VGE = 15 Vdc, IC = 10 Adc) |
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Ð |
3.72 |
4.42 |
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Gate Threshold Voltage |
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VGE(th) |
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Vdc |
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(VCE = VGE, IC = 1.0 mAdc) |
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4.0 |
6.0 |
8.0 |
mV/°C |
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Threshold Temperature Coefficient (Negative) |
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10 |
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Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc) |
gfe |
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12 |
Ð |
Mhos |
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DYNAMIC CHARACTERISTICS |
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Input Capacitance |
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(VCE = 25 Vdc, VGE = 0 Vdc, |
Cies |
Ð |
1003 |
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pF |
Output Capacitance |
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Coes |
Ð |
126 |
Ð |
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f = 1.0 MHz) |
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Transfer Capacitance |
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Cres |
Ð |
106 |
Ð |
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SWITCHING CHARACTERISTICS (1) |
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Turn±On Delay Time |
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(VCC = 720 Vdc, IC = 10 Adc, |
td(on) |
Ð |
74 |
Ð |
ns |
Rise Time |
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tr |
Ð |
83 |
Ð |
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VGE = 15 Vdc, L = 300 mH |
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Turn±Off Delay Time |
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RG = 20 Ω, TJ = 25°C) |
td(off) |
Ð |
76 |
Ð |
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Energy losses include ªtailº |
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Fall Time |
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tf |
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231 |
Ð |
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Turn±Off Switching Loss |
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Eoff |
Ð |
0.55 |
1.33 |
mJ |
Turn±On Switching Loss |
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Eon |
Ð |
1.21 |
1.88 |
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Total Switching Loss |
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Ets |
Ð |
1.76 |
3.21 |
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Turn±On Delay Time |
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(VCC = 720 Vdc, IC = 10 Adc, |
td(on) |
Ð |
66 |
Ð |
ns |
Rise Time |
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tr |
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87 |
Ð |
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VGE = 15 Vdc, L = 300 mH |
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Turn±Off Delay Time |
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RG = 20 Ω, TJ = 125°C) |
t |
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120 |
Ð |
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Energy losses include ªtailº |
d(off) |
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Fall Time |
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tf |
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575 |
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Turn±Off Switching Loss |
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Eoff |
Ð |
1.49 |
Ð |
mJ |
Turn±On Switching Loss |
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Eon |
Ð |
2.37 |
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Total Switching Loss |
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Ets |
Ð |
3.86 |
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Gate Charge |
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(VCC = 720 Vdc, IC = 10 Adc, |
QT |
Ð |
29 |
Ð |
nC |
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Q1 |
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13 |
Ð |
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V = 15 Vdc) |
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GE |
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Q2 |
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12 |
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DIODE CHARACTERISTICS |
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Diode Forward Voltage Drop |
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VFEC |
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Vdc |
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(IEC = 5.0 Adc) |
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Ð |
2.26 |
3.32 |
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(IEC = 5.0 Adc, TJ = 125°C) |
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Ð |
1.37 |
Ð |
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(IEC = 10 Adc) |
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Ð |
2.86 |
4.18 |
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(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. |
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(continued) |
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2 |
Motorola TMOS Power MOSFET Transistor Device Data |
MGW12N120D
ELECTRICAL CHARACTERISTICS Ð continued (TJ = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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DIODE CHARACTERISTICS Ð continued |
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Reverse Recovery Time |
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trr |
Ð |
116 |
Ð |
ns |
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(IF = 10 Adc, VR = 720 Vdc, |
ta |
Ð |
69 |
Ð |
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dIF/dt = 100 A/ms) |
t |
Ð |
47 |
Ð |
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b |
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Reverse Recovery Stored Charge |
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QRR |
Ð |
0.36 |
Ð |
mC |
Reverse Recovery Time |
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trr |
Ð |
234 |
Ð |
ns |
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(IF = 10 Adc, VR = 720 Vdc, |
ta |
Ð |
149 |
Ð |
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dIF/dt = 100 A/ms, TJ = 125°C) |
t |
Ð |
85 |
Ð |
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b |
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Reverse Recovery Stored Charge |
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QRR |
Ð |
1.40 |
Ð |
mC |
INTERNAL PACKAGE INDUCTANCE |
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Internal Emitter Inductance |
LE |
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nH |
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(Measured from the emitter lead 0.25″ from package to emitter bond pad) |
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Ð |
13 |
Ð |
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TYPICAL ELECTRICAL CHARACTERISTICS
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40 |
TJ = 25°C |
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VGE = 20 V |
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40 |
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(AMPS) |
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(AMPS) |
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30 |
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30 |
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CURRENT |
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17.5 V |
CURRENT |
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20 |
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15 V |
20 |
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, COLLECTOR |
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, COLLECTOR |
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10 |
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12.5 V |
10 |
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C |
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C |
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I |
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7.5 V |
I |
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0 |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
0 |
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0 |
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VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
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TJ = 125°C |
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VGE = 20 V |
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17.5 V |
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15 V |
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12.5 V |
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10 V |
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0 |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
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VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
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Figure 1. Output Characteristics, TJ = 25°C |
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24 |
VCE = 10 V |
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(AMPS) |
20 |
250 ms PULSE WIDTH |
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CURRENT |
16 |
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12 |
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TJ = 125°C |
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, COLLECTOR |
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8 |
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25°C |
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4 |
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C |
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I |
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0 |
7 |
9 |
11 |
13 |
15 |
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5 |
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VGE, GATE±TO±EMITTER VOLTAGE (VOLTS) |
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Figure 2. Output Characteristics, TJ = 125°C |
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(VOLTS) |
3.8 |
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3.6 |
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IC = 10 A |
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VOLTAGE |
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3.4 |
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3.2 |
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COLLECTOR±TO±EMITTER |
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7.5 A |
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3.0 |
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2.8 |
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2.6 |
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5 A |
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2.4 |
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2.2 |
VGE = 15 V |
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, |
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250 ms PULSE WIDTH |
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CE |
2 |
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V |
± 50 |
0 |
50 |
100 |
150 |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 3. Transfer Characteristics |
Figure 4. Collector±to±Emitter Saturation |
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Voltage versus Junction Temperature |
Motorola TMOS Power MOSFET Transistor Device Data |
3 |
MGW12N120D |
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10000 |
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TJ = 25°C |
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(pF) |
1000 |
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Cies |
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CAPACITANCE |
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Coes |
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100 |
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Cres |
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C, |
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10 |
5 |
10 |
15 |
20 |
25 |
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0 |
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GATE±TO±EMITTER OR COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
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1000 |
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V |
GE |
= 0 V |
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Cies |
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(pF) |
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C, CAPACITANCE |
100 |
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Coes |
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Cres |
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10 |
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TJ = 25°C |
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100 |
150 |
200 |
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50 |
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COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)
Figure 5b. High Voltage Capacitance
Variation
(VOLTS) |
16 |
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QT |
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VOLTAGE |
12 |
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Q1 |
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Q2 |
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, GATE±TO±EMITTER |
8 |
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4 |
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TJ = 25°C |
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IC = 20 A |
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GE |
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V |
0 |
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20 |
40 |
60 |
80 |
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0 |
Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate±to±Emitter and Collector±to±Emitter Voltage versus Total Charge
(mJ) |
3 |
VCC = 720 V |
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VGE = 15 V |
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ENERGY LOSSES |
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IC = 10 A |
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TJ = 125°C |
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2.5 |
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2 |
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SWITCHING |
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7.5 A |
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1.5 |
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TOTAL |
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5 A |
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1 |
20 |
30 |
40 |
50 |
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10 |
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RG, GATE RESISTANCE (OHMS) |
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Figure 7. Total Switching Losses versus
Gate Resistance
(mJ) |
3 |
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2.8 |
VCC = 720 V |
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LOSSES |
2.6 |
VGE = 15 V |
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2.4 |
RG = 20 Ω |
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IC = 10 A |
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2.2 |
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ENERGY |
2 |
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1.8 |
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1.6 |
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7.5 A |
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SWITCHING |
1.4 |
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1.2 |
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5 A |
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1 |
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0.8 |
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0.6 |
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TOTAL |
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0.4 |
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0.2 |
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0 |
50 |
75 |
100 |
125 |
150 |
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25 |
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TC, CASE TEMPERATURE (°C) |
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Figure 8. Total Switching Losses versus
Case Temperature
(mJ) |
2.4 |
VCC = 720 V |
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LOSSES |
2.2 |
VGE = 15 V |
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RG = 20 Ω |
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2 |
TJ = 125°C |
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ENERGY |
1.8 |
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SWITCHING |
1.6 |
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1.4 |
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TOTAL |
1.2 |
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1 |
6 |
7 |
8 |
9 |
10 |
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5 |
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IC, COLLECTOR±TO±EMITTER CURRENT (AMPS) |
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Figure 9. Total Switching Losses versus
Collector±to±Emitter Current
4 |
Motorola TMOS Power MOSFET Transistor Device Data |
CURRENTFORWARD(AMPS) |
25 |
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CURRENTCOLLECTOR±TO±EMITTER(A) |
20 |
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15 |
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TJ = 125°C |
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INSTANTANEOUS |
10 |
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TJ = 25°C |
C |
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5 |
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0 |
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, |
, |
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F |
0 |
1 |
2 |
3 |
4 |
I |
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VFM, FORWARD VOLTAGE DROP (VOLTS) |
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MGW12N120D
100
10
1
VGE = 15 V
RGE = 20 Ω
TJ = 125°C
0.1
1 |
10 |
100 |
1000 |
VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)
Figure 10. Maximum Forward Drop versus |
Figure 11. Reverse Biased |
Instantaneous Forward Current |
Safe Operating Area |
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1.0 |
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TRANSIENT THERMAL RESISTANCE |
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D = 0.5 |
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r(t), NORMALIZED EFFECTIVE |
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0.2 |
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0.1 |
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0.1 |
0.05 |
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P(pk) |
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0.02 |
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RθJC(t) = r(t) RθJC |
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0.01 |
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D CURVES APPLY FOR POWER |
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t1 |
PULSE TRAIN SHOWN |
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SINGLE PULSE |
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READ TIME AT t1 |
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t2 |
T |
J(pk) |
± T |
= P |
(pk) |
Rθ |
(t) |
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DUTY CYCLE, D = t1/t2 |
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C |
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JC |
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0.01 |
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1.0E±05 |
1.0E±04 |
1.0E±03 |
1.0E±02 |
1.0E±01 |
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1.0E+00 |
1.0E+01 |
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t, TIME (s)
Figure 12. Thermal Response
Motorola TMOS Power MOSFET Transistor Device Data |
5 |
MGW12N120D
PACKAGE DIMENSIONS
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±Q± |
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±T± |
NOTES: |
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E |
1. DIMENSIONING AND TOLERANCING PER ANSI |
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0.25 (0.010) M T |
B |
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M |
±B± |
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C |
Y14.5M, 1982. |
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2. CONTROLLING DIMENSION: MILLIMETER. |
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4 |
MILLIMETERS |
INCHES |
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U |
L |
DIM |
MIN |
MAX |
MIN |
MAX |
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A |
20.40 |
20.90 |
0.803 |
0.823 |
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B |
15.44 |
15.95 |
0.608 |
0.628 |
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A |
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C |
4.70 |
5.21 |
0.185 |
0.205 |
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R |
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D |
1.09 |
1.30 |
0.043 |
0.051 |
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E |
1.50 |
1.63 |
0.059 |
0.064 |
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1 |
2 |
3 |
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F |
1.80 |
2.18 |
0.071 |
0.086 |
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G |
5.45 BSC |
0.215 BSC |
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±Y± |
H |
2.56 |
2.87 |
0.101 |
0.113 |
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P |
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J |
0.48 |
0.68 |
0.019 |
0.027 |
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K |
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K |
15.57 |
16.08 |
0.613 |
0.633 |
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L |
7.26 |
7.50 |
0.286 |
0.295 |
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P |
3.10 |
3.38 |
0.122 |
0.133 |
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F |
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H |
Q |
3.50 |
3.70 |
0.138 |
0.145 |
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V |
R |
3.30 |
3.80 |
0.130 |
0.150 |
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J |
U |
5.30 BSC |
0.209 BSC |
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D |
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V |
3.05 |
3.40 |
0.120 |
0.134 |
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G |
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0.25 (0.010) M |
Y |
Q S |
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STYLE 4: |
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PIN 1. GATE |
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2. COLLECTOR |
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3. EMITTER |
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4. COLLECTOR |
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CASE 340F±03
TO±247AE
ISSUE E
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: |
|
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; |
JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, 6F Seibu±Butsuryu±Center, |
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447 or 602±303±5454 |
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MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE 602±244±6609 |
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INTERNET: http://Design±NET.com |
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298 |
◊ MGW12N120D/D
*MGW12N120D/D*