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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MGY30N60D/D

Designer's Data Sheet

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

N±Channel Enhancement±Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) is co±packaged
with a soft recovery ultra±fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage±blocking capability. Short circuit rated IGBT's are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operations at high frequencies.
Co±packaged IGBT's save space, reduce assembly time and cost.
• Industry Standard High Power TO±264 Package (TO±3PBL)		C
• High Speed Eoff: 60 mJ per Amp typical at 125°C
• High Short Circuit Capability ± 10 ms minimum
• Soft Recovery Free Wheeling Diode is included in the package

• Robust High Voltage Termination	G


• Robust RBSOA
		E

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

MGY30N60D

Motorola Preferred Device

IGBT & DIODE IN TO±264

30 A @ 90°C

50 A @ 25°C

600 VOLTS

SHORT CIRCUIT RATED

CASE 340G±02, Style 5

TO±264

Rating	Symbol		Value	Unit

Collector±Emitter Voltage	VCES		600	Vdc
Collector±Gate Voltage (RGE = 1.0 MW)	VCGR		600	Vdc
Gate±Emitter Voltage Ð Continuous	VGE		±20	Vdc
Collector Current Ð Continuous @ T C = 25°C	IC25		50	Adc
Ð Continuous @ T C = 90°C	IC90		30
Ð Repetitive Pulsed Current (1)	ICM		100	Apk
Total Power Dissipation @ TC = 25°C	PD		202	Watts
Derate above 25°C			1.61	W/°C

Operating and Storage Junction Temperature Range	TJ, Tstg		± 55 to 150	°C
Short Circuit Withstand Time	tsc		10	ms
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 W)
Thermal Resistance Ð Junction to Case ± IGBT	RqJC		0.62	°C/W
Ð Junction to Case ± Diode	RqJC		1.41
Ð Junction to Ambient	RqJA		35
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds	TL		260	°C
Mounting Torque, 6±32 or M3 screw		10 lbfSin (1.13 NSm)

(1) Pulse width is limited by maximum junction temperature.

Designer's Data for ªWorst Caseº Conditions Ð The Designer' s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

MGY30N60D

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±to±Emitter Breakdown Voltage		BVCES				Vdc
(VGE = 0 Vdc, IC = 250 μAdc)			600	Ð	Ð	mV/°C
Temperature Coefficient (Positive)			Ð	870	Ð	mV/°C

Zero Gate Voltage Collector Current		ICES	Ð	Ð	100	μAdc
(VCE = 600 Vdc, VGE = 0 Vdc)			Ð	Ð	100
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)			Ð	Ð	2500
Gate±Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)		IGES	Ð	Ð	250	nAdc
ON CHARACTERISTICS (1)

Collector±to±Emitter On±State Voltage		VCE(on)	Ð	2.20	2.90	Vdc
(VGE = 15 Vdc, IC = 15 Adc)			Ð	2.20	2.90
(VGE = 15 Vdc, IC = 15 Adc, TJ = 125°C)			Ð	2.10	Ð
(VGE = 15 Vdc, IC = 30 Adc)			Ð	2.60	3.45
Gate Threshold Voltage		VGE(th)	4.0	6.0	8.0	Vdc
(VCE = VGE, IC = 1 mAdc)			4.0	6.0	8.0	mV/°C
Threshold Temperature Coefficient (Negative)			Ð	10	Ð	mV/°C

Forward Transconductance (VCE = 10 Vdc, IC = 30 Adc)		gfe	Ð	15	Ð	Mhos
DYNAMIC CHARACTERISTICS

Input Capacitance	(VCE = 25 Vdc, VGE = 0 Vdc,	Cies	Ð	4280	Ð	pF
Output Capacitance	(VCE = 25 Vdc, VGE = 0 Vdc,	Coes	Ð	225	Ð
Output Capacitance	f = 1.0 MHz)	Coes	Ð	225	Ð
Transfer Capacitance		Cres	Ð	19	Ð
SWITCHING CHARACTERISTICS (1)

Turn±On Delay Time		td(on)	Ð	76	Ð	ns
Rise Time		tr	Ð	80	Ð
Turn±Off Delay Time	(VCC = 360 Vdc, IC = 30 Adc,	td(off)	Ð	348	Ð
	VGE = 15 Vdc, L = 300 mH
Fall Time	VGE = 15 Vdc, L = 300 mH	tf	Ð	188	Ð
Fall Time	RG = 20 Ω, TJ = 25°C)	tf	Ð	188	Ð
	RG = 20 Ω, TJ = 25°C)
Turn±Off Switching Loss	Energy losses include ªtailº	Eoff	Ð	0.98	1.28	mJ
Turn±On Switching Loss		Eon	Ð	2.00	Ð
Total Switching Loss		Ets	Ð	2.98	Ð
Turn±On Delay Time		td(on)	Ð	73	Ð	ns
Rise Time		tr	Ð	95	Ð
Turn±Off Delay Time	(VCC = 360 Vdc, IC = 30 Adc,	td(off)	Ð	394	Ð
	VGE = 15 Vdc, L = 300 mH
Fall Time	VGE = 15 Vdc, L = 300 mH	tf	Ð	418	Ð
Fall Time	RG = 20 Ω, TJ = 125°C)	tf	Ð	418	Ð
Turn±Off Switching Loss	Energy losses include ªtailº	Eoff	Ð	1.90	Ð	mJ
Turn±On Switching Loss		Eon	Ð	3.10	Ð
Total Switching Loss		Ets	Ð	5.00	Ð
Gate Charge	(VCC = 360 Vdc, IC = 30 Adc,	QT	Ð	150	Ð	nC
	(VCC = 360 Vdc, IC = 30 Adc,	Q1	Ð	30	Ð
	VGE = 15 Vdc)	Q1	Ð	30	Ð
		Q2	Ð	45	Ð
DIODE CHARACTERISTICS

Diode Forward Voltage Drop		VFEC	Ð	1.30	1.80	Vdc
(IEC = 15 Adc)			Ð	1.30	1.80
(IEC = 15 Adc, TJ = 125°C)			Ð	1.10	Ð
(IEC = 30 Adc)			Ð	1.45	2.05
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.						(continued)

2	Motorola TMOS Power MOSFET Transistor Device Data

MGY30N60D

ELECTRICAL CHARACTERISTICS Ð continued (TJ = 25°C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit

DIODE CHARACTERISTICS Ð continued

Reverse Recovery Time		trr	Ð	153	Ð	ns
	(IF = 30 Adc, VR = 360 Vdc,	ta	Ð	82	Ð
	dIF/dt = 200 A/ms)	t	Ð	71	Ð
		b
Reverse Recovery Stored Charge		QRR	Ð	2.3	Ð	mC
Reverse Recovery Time		trr	Ð	208	Ð	ns
	(IF = 30 Adc, VR = 360 Vdc,	ta	Ð	117	Ð
	dIF/dt = 200 A/ms, TJ = 125°C)	t	Ð	91	Ð
		b
Reverse Recovery Stored Charge		QRR	Ð	3.8	Ð	mC
INTERNAL PACKAGE INDUCTANCE

Internal Emitter Inductance		LE				nH
(Measured from the emitter lead 0.25″ from package to emitter bond pad)			Ð	13	Ð

TYPICAL ELECTRICAL CHARACTERISTICS

	60	TJ = 25°C		VGE = 20 V		12.5 V
(AMPS)		TJ = 25°C		VGE = 20 V		12.5 V
				17.5 V		10 V

CURRENT	40			15 V
CURRENT
, COLLECTOR	20
, COLLECTOR
C
I
	0	1		2	3	4	5
	0	1		2	3	4	5
		VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)
		Figure 1. Output Characteristics, TJ = 25°C
	60	VCE = 100 V
		VCE = 100 V
(AMPS)		5 ms PULSE WIDTH
(AMPS)					TJ = 125°C
CURRENT	40
CURRENT
, COLLECTOR					25°C
	20

C
I
	0	6	7	8	9	10	11
	5	6	7	8	9	10	11

VGE, GATE±TO±EMITTER VOLTAGE (VOLTS)

Figure 3. Transfer Characteristics

	60	TJ = 125°C		VGE = 20 V		12.5 V
(AMPS)		TJ = 125°C		VGE = 20 V		12.5 V
				17.5 V		10 V
						10 V
				15 V
CURRENT	40			15 V
	40

, COLLECTOR	20
, COLLECTOR
C
I
	0	1	2	3	4	5
	0	1	2	3	4	5
		VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)
		Figure 2. Output Characteristics, TJ = 125°C
(VOLTS)	3
	VGE = 15 V
	80 ms PULSE WIDTH
VOLTAGE	80 ms PULSE WIDTH			IC = 30 A
				IC = 30 A
	2.6			22.5 A
, COLLECTOR±TO±EMITTER	2.6

				15 A
	2.2

CE	1.8
V	± 50		0	50	100	150
	± 50		0	50	100	150
			TJ, JUNCTION TEMPERATURE (°C)

Figure 4. Collector±to±Emitter Saturation

Voltage versus Junction Temperature

Motorola TMOS Power MOSFET Transistor Device Data

MGY30N60D
	8000	VCE = 0 V			TJ = 25°C
		VCE = 0 V			TJ = 25°C
(pF)	6000
(pF)
C, CAPACITANCE			Cies
	4000
	2000
	2000
			Coes
	0	Cres
	0	5	10	15	20	25
	0	5	10	15	20	25
	GATE±TO±EMITTER OR COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)

Figure 5. Capacitance Variation

(VOLTS)	20
(VOLTS)				QT
VOLTAGE	15
VOLTAGE
, GATE±TO±EMITTER	10	Q1	Q2
	5					TJ = 25°C
						IC = 30 A
GE
V	0
	0	30	60	90	120	150
	0	30	60	90	120	150

Qg, TOTAL GATE CHARGE (nC)

Figure 6. Gate±to±Emitter Voltage versus Total Charge

(mJ)	6.4	VCC = 360 V
		VCC = 360 V
	5.6	VGE = 15 V
LOSSES	5.6	VGE = 15 V
	4.8	TJ = 125°C		IC = 30 A
	4.8

ENERGY	4
ENERGY	3.2			20 A
SWITCHING	3.2
	2.4
	1.6			10 A
TOTAL	0.8
TOTAL
	0	20	30	40	50
	10	20	30	40	50

RG, GATE RESISTANCE (OHMS)

Figure 7. Total Switching Losses versus

Gate Resistance

(mJ)	6.5
(mJ)		VCC = 360 V
LOSSES	5.5	VGE = 15 V
		RG = 20 Ω
	4.5
ENERGY	4.5			IC = 30 A
				IC = 30 A
	3.5
SWITCHING	3.5
				20 A
	2.5
				10 A
TOTAL	1.5			10 A
	1.5

	0.5	25	50	75	100	125	150
	0	25	50	75	100	125	150
		TJ, JUNCTION TEMPERATURE (°C)

Figure 8. Total Switching Losses versus

Junction Temperature

(mJ)	5
(mJ)		VCC = 360 V
LOSSES	4	VGE = 15 V
	4	RG = 20 Ω
		RG = 20 Ω
		TJ = 125°C
ENERGY		TJ = 125°C
	3

SWITCHING	2
SWITCHING	1
TOTAL	1
TOTAL
	0	5	10	15	20	25	30
	0	5	10	15	20	25	30
		IC, COLLECTOR±TO±EMITTER CURRENT (AMPS)

Figure 9. Total Switching Losses versus

Collector±to±Emitter Current

	3
(mJ)	VCC = 360 V
(mJ)	VGE = 15 V
LOSSES	TJ = 125°C		IC = 30 A
	2

ENERGY			20 A
ENERGY
TURN±OFF	1		10 A
			10 A

	0	20	30	40	50
	10	20	30	40	50
		RG, GATE RESISTANCE (OHMS)

Figure 10. Turn±Off Losses versus

Gate Resistance

4	Motorola TMOS Power MOSFET Transistor Device Data

	3
(mJ)		VCC = 360 V
(mJ)		VGE = 15 V
LOSSES		RG = 20 Ω
	2

ENERGY				IC = 30 A
ENERGY
TURN±OFF	1			20 A
				20 A
				10 A
				10 A
	0	25	50	75	100	125	150
	0	25	50	75	100	125	150
		TJ, JUNCTION TEMPERATURE (°C)

Figure 11. Turn±Off Losses versus

Junction Temperature

(AMPS)CURRENT	100
	100
FORWARD	10
FORWARD			TJ = 125°C	TJ = 25°C
			TJ = 125°C
INSTANTANEOUS,
INSTANTANEOUS,	1
	1
i	0.1
F	0	0.4	0.8	1.2	1.6
	0	0.4	0.8	1.2	1.6

VFM, FORWARD VOLTAGE DROP (VOLTS)

Figure 13. Typical Diode Forward Drop versus Instantaneous Forward Current

						MGY30N60D
	2
(mJ)		VCC = 360 V
(mJ)		VGE = 15 V
LOSSES	1.5	RG = 20 Ω
LOSSES		TJ = 125°C
ENERGY	1
ENERGY
TURN±OFF	0.5
TURN±OFF
	0	5	10	15	20	25	30
	0	5	10	15	20	25	30
		IC, COLLECTOR±TO±EMITTER CURRENT (AMPS)

Figure 12. Turn±Off Losses versus

Collector±to±Emitter Current

CURRENT (A)	100
	10




COLLECTOR±TO±EMITTER,


	1






		T	J =	125	°C




		V	GE	= 15 V
C		RGE		= 20 Ω


I	0.1

		10				100	1000
	1	10				100	1000

VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)

Figure 14. Reverse Biased Safe

Operating Area

Motorola TMOS Power MOSFET Transistor Device Data

MGY30N60D

PACKAGE DIMENSIONS

		0.25 (0.010) M	T B M
	±B±	±Q±	±T±
	±B±
			C
		U	E
	N	U
	N
		A
R	1 2 3	L
R	1 2 3

±Y± P

F 2 PL

D 3 PL	H

0.25 (0.010) M Y Q S

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: MILLIMETER.

	MILLIMETERS		INCHES
DIM	MIN	MAX	MIN	MAX
A	2.8	2.9	1.102	1.142
B	19.3	20.3	0.760	0.800
C	4.7	5.3	0.185	0.209
D	0.93	1.48	0.037	0.058
E	1.9	2.1	0.075	0.083
F	2.2	2.4	0.087	0.102
G	5.45 BSC		0.215 BSC
H	2.6	3.0	0.102	0.118
J	0.43	0.78	0.017	0.031
K	17.6	18.8	0.693	0.740
L	11.0	11.4	0.433	0.449
N	3.95	4.75	0.156	0.187
P	2.2	2.6	0.087	0.102
Q	3.1	3.5	0.122	0.137
R	2.15	2.35	0.085	0.093
U	6.1	6.5	0.240	0.256
W	2.8	3.2	0.110	0.125

STYLE 5:

PIN 1. GATE

2.COLLECTOR

3.EMITTER

CASE 340G±02

TO±264

ISSUE E

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, 6F Seibu±Butsuryu±Center,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447 or 602±303±5454	3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±81±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE 602±244±6609	ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

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