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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 4N29/D

GlobalOptoisolator

6-Pin DIP Optoisolators

Darlington Output

The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.

This series is designed for use in applications requiring high collector output currents at lower input currents.

•Higher Sensitivity to Low Input Drive Current

•Meets or Exceeds All JEDEC Registered Specifications

•To order devices that are tested and marked per VDE 0884 requirements, the suffix ªVº must be included at end of part number. VDE 0884 is a test option.

Applications

•Low Power Logic Circuits

•Interfacing and coupling systems of different potentials and impedances

•Telecommunications Equipment

•Portable Electronics

•Solid State Relays

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit

INPUT LED

Reverse Voltage	VR	3	Volts
Forward Current Ð Continuous	IF	60	mA
LED Power Dissipation @ TA = 25°C	PD	120	mW
Derate above 25°C		1.41	mW/°C

OUTPUT DETECTOR

Collector±Emitter Voltage	VCEO	30	Volts
Emitter±Collector Voltage	VECO	5	Volts
Collector±Base Voltage	VCBO	30	Volts
Collector Current Ð Continuous	IC	150	mA
Detector Power Dissipation @ TA = 25°C	PD	150	mW
Derate above 25°C		1.76	mW/°C

TOTAL DEVICE

Isolation Surge Voltage(2)	VISO	7500	Vac(pk)
(Peak ac Voltage, 60 Hz, 1 sec Duration)

Total Device Power Dissipation @ TA = 25°C	PD	250	mW
Derate above 25°C		2.94	mW/°C

Ambient Operating Temperature Range(3)	T	± 55 to +100	°C
	A
Storage Temperature Range(3)	T	± 55 to +150	°C
	stg
Soldering Temperature (10 sec, 1/16″ from case)	TL	260	°C

4N29

4N29A

4N30*

[CTR = 100% Min]

4N31

[CTR = 50% Min]

4N32*

4N33 *

[CTR = 500% Min]

*Motorola Preferred Devices

STYLE 1 PLASTIC

STANDARD THRU HOLE

CASE 730A±04

	SCHEMATIC
1	6
2	5
	5
3	4
	4

PIN 1. LED ANODE

2.LED CATHODE

3.N.C.

4.EMITTER

5.COLLECTOR

6.BASE

1.Difference in 4N32 and 4N33 is JEDEC Registration for VISO only. All Motorola 6±Pin devices exceed JEDEC specification and are 7500 Vac(pk). The same applies for 4N29 and 4N30.

2.Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

3.Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

Preferred devices are Motorola recommended choices for future use and best overall value.

GlobalOptoisolator is a trademark of Motorola, Inc.

REV 4

Motorola, Inc. 1995

4N29

4N29A

4N30

4N31

4N32

4N33

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)(1)

Characteristic

Symbol

Min

Typ(1)

Max

Unit

INPUT LED

*Reverse Leakage Current (VR = 3 V, RL = 1 M ohms)

0.05

100

μA

*Forward Voltage (IF = 10 mA)

1.34

1.5

Volts

Capacitance (VR = 0 V, f = 1 MHz)

1.8

OUTPUT DETECTOR (TA = 25°C and IF = 0, unless otherwise noted)

*Collector±Emitter Dark Current

ICEO

100

(VCE = 10 V, Base Open)

*Collector±Base Breakdown Voltage

V(BR)CBO

Volts

(IC = 100 μA, IE = 0)

*Collector±Emitter Breakdown Voltage

V(BR)CEO

Volts

(IC = 100 μA, IB = 0)

*Emitter±Collector Breakdown Voltage

V(BR)ECO

Volts

(IE = 100 μA, IB = 0)

DC Current Gain

hFE

16K

(VCE = 5 V, IC = 500 μA)

COUPLED (TA = 25°C unless otherwise noted)

*Collector Output Current (3)

4N32, 4N33

IC (CTR)(2)

50 (500)

mA (%)

(VCE = 10 V, IF = 10 mA)

4N29, 4N30

10 (100)

4N31

5 (50)

Isolation Surge Voltage(4,5)

4N29/A, 4N30, 31, 32, 33

7500

Vac(pk)

(60 Hz ac Peak, 1 Second)

*4N29, 4N32

ISO

2500

*4N30, 4N31, 4N33

1500

Isolation Resistance(4)

RISO

1011

Ohms

(V = 500 V)

*Collector±Emitter Saturation Voltage(3)

4N31

VCE(sat)

1.2

Volts

(IC = 2 mA, IF = 8 mA)

4N29, 4N30, 4N32, 4N33

Isolation Capacitance(4)

CISO

0.2

(V = 0 V, f = 1 MHz)

Turn±On Time(6)

0.6

μs

(IC = 50 mA, IF = 200 mA, VCC = 10 V)

Turn±Off Time(6)

μs

(IC = 50 mA, IF = 200 mA, VCC = 10 V) 4N29, 30, 31

off

4N32, 33

100

*Indicates JEDEC Registered Data. All Motorola 6±pin devices have VISO rating of 7500 Vac(pk).

1.Always design to the specified minimum/maximum electrical limits (where applicable).

2.Current Transfer Ratio (CTR) = IC/IF x 100%.

3.Pulse Test: Pulse Width = 300 μs, Duty Cycle p 2%.

4.For this test, Pins 1 and 2 are common and Pins 4, 5 and 6 are common.

5.Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.

6.For test circuit setup and waveforms, refer to Figure 11.

2	Motorola Optoelectronics Device Data

4N29 4N29A 4N30 4N31 4N32 4N33

TYPICAL CHARACTERISTICS

(VOLTS)

PULSE

ONLY

VOLTAGE

1.8

PULSE

OR DC

1.6

FORWARD,

1.2

1.4

TA =

±55

°C

25°C

100°C

100

1000

IF, LED FORWARD CURRENT (mA)

Figure 1. LED Forward Voltage versus Forward Current

(NORMALIZED)	10
	10
		NORMALIZED TO: IF = 10 mA
			A
CURRENT	1
CURRENT		+70°C
COLLECTOR		+70°C
	0.1	TA = ±55°C THRU
OUTPUT		+25°C
OUTPUT		0.5	1	2	5	10	20	50
		+100°C
	0.01
,
C			IF, LED INPUT CURRENT (mA)
I			IF, LED INPUT CURRENT (mA)

Figure 2. Output Current versus Input Current

C(mA)CURRENTCOLLECTOR,	140						2 mA					(NORMALIZED)CURRENTCOLLECTOR	10
	140												10
	120												7
	120					IF = 10 mA							5					NORMALIZED TO TA = 25°C
																		NORMALIZED TO TA = 25°C
	100
	100												2
													2
	80						5 mA
							5 mA						1
	60												0.7
	40												0.5
	40
I	20	1	2	3	4	5	6	7	8	9	10	OUTPUT,	0.2	±40	±20	0	20	40	60	80	100
I	0	1	2	3	4	5	6	7	8	9	10	OUTPUT,	±60	±40	±20	0	20	40	60	80	100
	0						1 mA						0.1
	0												0.1
			VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)									C			TA, AMBIENT TEMPERATURE (°C)
			VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)									I			TA, AMBIENT TEMPERATURE (°C)

Figure 3. Collector Current versus

Figure 4. Output Current versus Ambient Temperature

Collector±Emitter Voltage

VCE, COLLECTOR±EMITTER VOLTAGE (NORMALIZED)

1.3

NORMALIZED TO TA = 25°C

1.2

1.1

0.9

0.8

0.7

±60	±40	±20	0	20	40	60	80	100
		TA, AMBIENT TEMPERATURE (°C)

Figure 5. Collector±Emitter Voltage versus

(NORMALIZED)	105
(NORMALIZED)
CURRENT	104	NORMALIZED TO: V	CE	= 10 V
		NORMALIZED TO: TA = 25°C
	103
DARK	102
,COLLECTOR±EMITTER	102
				30 V
	10
				10 V
	1	20		40	60	80	100
	0	20		40	60	80	100
		TA, AMBIENT TEMPERATURE (°C)
CEO		TA, AMBIENT TEMPERATURE (°C)
CEO		Figure 6. Collector±Emitter Dark Current versus
I

Ambient Temperature

Motorola Optoelectronics Device Data

4N29		4N29A				4N30				4N31			4N32				4N33
1000																	1000
											V	CC =		10	V								RL = 1000


						R	L =	1000
100						R	L =	1000									100							100
100																	100
TIME(μs)																	TIMEt, (μs)




																								10
t,																								10


								100
10																	10







								10																			V	CC =	10	V
1																	1
1																	1
	0.1	0.2		0.5	1	2			5	10	20		50			100		0.1	0.2	0.5	1			2	5	10	20			50	100
					IF, LED INPUT CURRENT (mA)																	IF, LED INPUT CURRENT (mA)
			Figure 7. Turn±On Switching Times																	Figure 8. Turn±Off Switching Times

IC, TYPICAL COLLECTOR CURRENT (mA)

14										IB = 0.7 μA
I	F	= 0								IB = 0.7 μA
12	F
										0.6 μA
										0.5 μA
10
8
										0.4 μA
6										0.3 μA
										0.3 μA
4										0.2 μA
										0.2 μA
2										0.1 μA
0		2	4	6	8	10	12	14	16	18	20
0		2	4	6	8	10	12	14	16	18	20

	100
(pF)		CLED
C, CAPACITANCE		CCB		f = 1 MHz
	10	CCB
	10
			CEB
			CEB	CCE
				CCE
	1	0.1	1	10	100
	0.01	0.1	1	10	100

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)		V, VOLTAGE (VOLTS)
Figure 9. DC Current Gain (Detector Only)	Figure 10. Capacitances versus Voltage

TEST CIRCUIT		WAVEFORMS
VCC = 10 V			INPUT PULSE
			INPUT PULSE


IC = 50 mA

IF = 200 mA	RL
IF = 200 mA		10%
		10%
INPUT	OUTPUT	OUTPUT PULSE
	OUTPUT	90%
		90%

PULSE WIDTH	tr	tf
< 1 ms
	ton	t

		off

Figure 11. Switching Time Test Circuit and Waveforms

4	Motorola Optoelectronics Device Data

		4N29	4N29A	4N30			4N31			4N32	4N33
		PACKAGE DIMENSIONS
	±A±
			NOTES:
6	4		1. DIMENSIONING AND TOLERANCING PER ANSI
6	4			Y14.5M, 1982.
				Y14.5M, 1982.
	±B±		2. CONTROLLING DIMENSION: INCH.
1	3		3. DIMENSION L TO CENTER OF LEAD WHEN
1	3			FORMED PARALLEL.
						INCHES		MILLIMETERS
F 4 PL	C	L		DIM		MIN	MAX	MIN	MAX
	C			A	0.320		0.350	8.13	8.89
	N			A	0.320		0.350	8.13	8.89
	N			B	0.240		0.260	6.10	6.60
				B	0.240		0.260	6.10	6.60
				C		0.115	0.200	2.93	5.08
				D	0.016		0.020	0.41	0.50
				E	0.040		0.070	1.02	1.77
±T±	K			F	0.010		0.014	0.25	0.36
±T±				G		0.100 BSC		2.54 BSC
SEATING				G		0.100 BSC		2.54 BSC
SEATING				J	0.008		0.012	0.21	0.30
PLANE	G	J 6 PL		K	0.100		0.150	2.54	3.81
		J 6 PL		K	0.100		0.150	2.54	3.81
		0.13 (0.005) M T B	M A M	L		0.300 BSC		7.62 BSC
	M			L		0.300 BSC		7.62 BSC
E 6 PL	M			M		0	15	0	15
E 6 PL	D 6 PL			N	0.015		0.100	0.38	2.54
				N	0.015		0.100	0.38	2.54

	0.13 (0.005) M T A	M B M		STYLE 1:
				PIN 1.		ANODE
					2.	CATHODE
					3.	NC
					4.	EMITTER
					5.	COLLECTOR
					6.	BASE

CASE 730A±04

ISSUE G

±A±

6	4
	±B± S
1	3
F 4 PL	H	L
	H
	C
	G	J	±T±
	G	J	SEATING
E 6 PL		K 6 PL	PLANE
E 6 PL		K 6 PL
	D 6 PL	0.13 (0.005) M	T B M A M
	0.13 (0.005) M T A M	B M

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.320	0.350	8.13	8.89
B	0.240	0.260	6.10	6.60
C	0.115	0.200	2.93	5.08
D	0.016	0.020	0.41	0.50
E	0.040	0.070	1.02	1.77
F	0.010	0.014	0.25	0.36
G	0.100 BSC		2.54 BSC
H	0.020	0.025	0.51	0.63
J	0.008	0.012	0.20	0.30
K	0.006	0.035	0.16	0.88
L	0.320 BSC		8.13 BSC
S	0.332	0.390	8.43	9.90

*Consult factory for leadform

option availability

CASE 730C±04

ISSUE D

Motorola Optoelectronics Device Data

4N29 4N29A 4N30 4N31 4N32 4N33

	±A±	NOTES:
		1.	DIMENSIONING AND TOLERANCING PER ANSI
			Y14.5M, 1982.
6	4	2.	CONTROLLING DIMENSION: INCH.
6	4	3.	DIMENSION L TO CENTER OF LEAD WHEN
		±B±	FORMED PARALLEL.
		±B±

1	3					INCHES		MILLIMETERS
					DIM	MIN	MAX	MIN	MAX
					A	0.320	0.350	8.13	8.89
			L		B	0.240	0.260	6.10	6.60
F 4 PL		N	L		C	0.115	0.200	2.93	5.08
F 4 PL		N			D	0.016	0.020	0.41	0.50
					E	0.040	0.070	1.02	1.77
			C		F	0.010	0.014	0.25	0.36
			C		G	0.100 BSC		2.54 BSC
±T±					J	0.008	0.012	0.21	0.30
±T±					K	0.100	0.150	2.54	3.81
SEATING					L	0.400	0.425	10.16	10.80
PLANE	G		K	J	N	0.015	0.040	0.38	1.02
	G		K	J	N	0.015	0.040	0.38	1.02
	D 6 PL
E 6 PL			0.13 (0.005) M T A M B	M

*Consult factory for leadform option availability

CASE 730D±05

ISSUE D

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298


	◊	4N29/D

*4N29/D*

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