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mrf275grev0

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF275G/D

The RF MOSFET Line

Power Field-Effect Transistor

N±Channel Enhancement±Mode

Designed primarily for wideband large±signal output and driver stages from 100 ± 500 MHz.

• Guaranteed Performance @ 500 MHz, 28 Vdc Output Power Ð 150 Watts

Power Gain Ð 10 dB (Min) Efficiency Ð 50% (Min)

100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1

• Overall Lower Capacitance @ 28 V

Ciss Ð 135 pF

Coss Ð 140 pF

Crss Ð 17 pF

• Simplified AVC, ALC and Modulation

Typical data for power amplifiers in industrial and commercial applications:

•Typical Performance @ 400 MHz, 28 Vdc Output Power Ð 150 Watts

Power Gain Ð 12.5 dB Efficiency Ð 60%

•Typical Performance @ 225 MHz, 28 Vdc Output Power Ð 200 Watts

Power Gain Ð 15 dB Efficiency Ð 65%

(FLANGE)

MAXIMUM RATINGS

MRF275G

150 W, 28 V, 500 MHz N±CHANNEL MOS BROADBAND

100 ± 500 MHz

RF POWER FET

CASE 375±04, STYLE 2

Rating	Symbol	Value	Unit

Drain±Source Voltage	VDSS	65	Vdc
Drain±Gate Voltage	VDGR	65	Vdc
(RGS = 1.0 MΩ)
Gate±Source Voltage	VGS	± 40	Adc
Drain Current Ð Continuous	ID	26	Adc
Total Device Dissipation @ TC = 25°C	PD	400	Watts
Derate above 25°C		2.27	W/°C

Storage Temperature Range	Tstg	± 65 to +150	°C
Operating Junction Temperature	TJ	200	°C
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	0.44	°C/W

NOTE ± CAUTION ± MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

MOTOROLAMotorola, Inc. 1997RF DEVICE DATA	MRF275G
	1

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS (1)

Drain±Source Breakdown Voltage	V(BR)DSS	65		Ð	Ð	Vdc
(VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current	IDSS	Ð		Ð	1	mA
(VDS = 28 V, VGS = 0)
Gate±Source Leakage Current	IGSS	Ð		Ð	1	μA
(VGS = 20 V, VDS = 0)
ON CHARACTERISTICS (1)

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)	VGS(th)	1.5		2.5	4.5	Vdc
Drain±Source On±Voltage (VGS = 10 V, ID = 5 A)	VDS(on)	0.5		0.9	1.5	Vdc
Forward Transconductance (VDS = 10 V, ID = 2.5 A)	gfs	3		3.75	Ð	mhos
DYNAMIC CHARACTERISTICS (1)

Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz)	Ciss	Ð		135	Ð	pF
Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz)	Coss	Ð		140	Ð	pF
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz)	Crss	Ð		17	Ð	pF
FUNCTIONAL CHARACTERISTICS (2) (Figure 1)

Common Source Power Gain	Gps	10		11.2	Ð	dB
(VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA)
Drain Efficiency	η	50		55	Ð	%
(VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA)
Electrical Ruggedness	ψ
(VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA,			No Degradation in Output Power
VSWR 30:1 at all Phase Angles)

(1.) Each side of device measured separately.
(2.) Measured in push±pull configuration.

MRF275G	MOTOROLA RF DEVICE DATA
2

		A		B
					C17		C18	L6
+VGG						L5		+28 V
						L5		+
C14	R1	C15	C16	C22				C19
C14	R1	C15	C16	C22
		L1		L3
	C1		D.U.T.				C10
	C1						C10
	Z1	Z3	Z5		Z7
	C2							C11
	C2
B1	C5	C6		C7	C8	C9		B2
								B2
	C3							C12
								C12
	Z2	Z4	Z6		Z8
	C4						C13
		L2		L4
		A			B
		C20		C21

B1	Balun, 50 W, 0.086″ O.D. 2″ Long, Semi Rigid Coax
B2	Balun, 50 W, Coax 0.141″ O.D. 2″ Long, Semi Rigid
C1, C2, C3, C4,
C10, C11, C12, C13 270 pF, ATC Chip Capacitor
C5, C8	1.0± 20 pF, Trimmer Capacitor, Johanson
C6	22 pF, Mini±Unelco Capacitor
C7	15 pF, Unelco Capacitor
C9	2.1 pF, ATC Chip Capacitor
C14, C15, C16,
C20, C21, C22	0.1 mF, Ceramic Capacitor
C17, C18	680 pF, Feedthru Capacitor
C19	10 mF, 50 V, Electrolytic Capacitor, Tantalum
L1, L2	10 Turns AWG #24,
	0.145″ O.D., 106 nH
	Taylor±Spring Inductor
L3, L4	10 Turns AWG #18,
	0.340″ I.D., Enameled Wire

L5	Ferroxcube VK200 20/4B
L6	4 Turns #16, 0.340″ I.D.,
	Enameled Wire
R1	1.0 kW,1/4 W Resistor
W1 ± W4	20 x 200 x 250 mils, Wear Pads,
	Beryllium±Copper, (See
	Component Location Diagram)
Z1, Z2	1.10″ x 0.245″ , Microstrip Line
Z3, Z4, Z5, Z6	0.300″ x 0.245″ , Microstrip Line
Z7, Z8	1.00″ x 0.245″ , Microstrip Line
Board material	0.060″ Teflon±fiberglass,

er = 2.55, copper clad both sides, 2 oz. copper.

Points A are connected together on PCB.

Points B are connected together on PCB.

Figure 1. 500 MHz Test Circuit

MOTOROLA RF DEVICE DATA	MRF275G
	3

TYPICAL CHARACTERISTICS

	300
	300								225	MHz
(WATTS)	250								225	MHz
	250										400 MHz		500 MHz


POWER	200
	200
	150
	150
, OUTPUT	100
out											IDQ = 2 x 100 mA
P	50										IDQ = 2 x 100 mA
	50										VDD = 28 V
											VDD = 28 V
	0
	0		5				10		15
	0		5				10		15			20		25
						Pin, INPUT POWER (Watts)
		Figure 2. Output Power versus Input Power
	10
	9	VDS = 10		V
(AMPS)	9	VGS(th) =		2.5 V
(AMPS)	7	VGS(th) =		2.5 V
CURRENT	8
	8
	6


DRAIN	5
	5
	4
	4
,	3
,	3
D	2
I	2
	1
	1
	0
	0	0.5			1.5		2	2.5			3.5	4	4.5
	0	0.5	1		1.5		2	2.5	3		3.5	4	4.5	5
					VGS, GATE±SOURCE VOLTAGE (V)
		Figure 4. Drain Current versus Gate Voltage
					(Transfer Characteristics)
	200
(WATTS)	180										Pin = 14 W
(WATTS)	140											10 W
POWER	160
POWER	120
	120
OUTPUT	100											6 W
OUTPUT	80
	80
,	60
,	60
out	40
P	40										IDQ = 2 x 100 mA
											IDQ = 2 x 100 mA
	20										f = 400 MHz
	20
	0
	0
	12	14			16		18	20	22		24		26	28

VDD, SUPPLY VOLTAGE (V)

Figure 6. Output Power versus Supply Voltage

	160
	160
(WATTS)	140
	140
	120
POWER	120
POWER	80
OUTPUT,	100
OUTPUT,	40							VDS = 28 V
out	60
out								I	DQ	= 2 x 100 mA
P									DQ
	20							Pin = Constant
								f = 500 MHz
	0
	0		±8
	±10		±8		±6	±4	±2		0		2		4
				VGS, GATE±SOURCE VOLTAGE (V)
			Figure 3. Output Power versus Gate Voltage
	180
	160								Pin	= 14 W
(WATTS)	160
(WATTS)	140
	140										10 W
	120										10 W
POWER

	100
OUTPUT,	100										6 W
	80										6 W


out	60
	60
	40
	40
P								IDQ		= 2 x 100		mA
								IDQ		= 2 x 100		mA
	20							f =		500 MHz
	20
	0
	0						22				26
	12		14	16	18	20	22		24		26		28
					VDD, SUPPLY VOLTAGE (V)
		Figure 5. Output Power versus Supply Voltage
	250
(WATTS)											12 W
(WATTS)	200
POWER	200										10 W
											10 W
	150
OUTPUT,	150										Pin = 4 W
	100										Pin = 4 W

out								I		= 2 x 100 mA
out								I		= 2 x 100 mA
P	50								DQ
P	50							f =		225 MHz
								f =		225 MHz
	0
	0
	12		14	16	18	20	22		24		26		28

VDD, SUPPLY VOLTAGE (V)

Figure 7. Output Power versus Supply Voltage

MRF275G	MOTOROLA RF DEVICE DATA
4

TYPICAL CHARACTERISTICS

	1000


				Coss
(pF)	100			Ciss
CAPACITANCE	100			Ciss






	10			Crss
				Crss
C,




						VGS	= 0 V
						f = 1.0 MHz
	1
	1		10		20	25
	0	5	10	15	20	25		30

VDS, DRAIN±SOURCE VOLTAGE (V)

Figure 8. Capacitance versus Drain±Source Voltage*

*Data shown applies only to one half of device, MRF275G

VGS, GATE±SOURCE VOLTAGE (NORMALIZED)

1.3
1.3	V	DD = 28	V
1.2	V	DD = 28	V


1.1
1.1					ID	= 4 A
1					ID	= 4 A
1
0.9						2 A

				3 A		0.1 A
0.8				3 A


0.7
0.7

±25 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (°C)

Figure 9. Gate±Source Voltage versus

Case Temperature

	100
(AMPS)
, DRAIN CURRENT	10		TC = 25°C
	10

D
I
	1	10
	1	10	100

VDS, DRAIN±SOURCE VOLTAGE (V)

Figure 10. DC Safe Operating Area

MOTOROLA RF DEVICE DATA	MRF275G
	5

f = 500 MHz

400	Zo = 10 Ω
400	Zo = 10 Ω
Zin	ZOL*
	225
225

VDD = 28 V, IDQ = 2 x 100 mA, Pout = 150 W

f	Zin	ZOL*
(MHz)	Ohms	Ohms

225	1.6 ± j2.30	3.2 ± j1.50

400	1.9 + j0.48	2.3 ± j0.19

500	1.9 + j2.60	2.0 + j1.30

ZOL* = Conjugate of the optimum load impedance into which the device operates at a given output power, voltage and frequency.

Note: Input and output impedance values given are measured from gate to gate and drain to drain respectively.

Figure 11. Series Equivalent Input/Output Impedance

MRF275G	MOTOROLA RF DEVICE DATA
6

A B

C14

C15

BIAS						C18
C10	C11	R1	C12		C13	C18
C10	C11	R1	C12	R2	C13
				R2
					L3
	C1	L1		D.U.T.		C8
	C1	L1				C8
			Z1		Z3	Z5

0.180″

C16

C17

Balun, 50 W, 0.086″ O.D. 2″ Long,

L1, L2

#18 Wire, Hairpin Inductor

Semi Rigid Coax

L3, L4

12 Turns #18, 0.340″ I.D.,

Balun, 50 W, 0.141″ O.D. 2″ Long,

Enameled Wire

Semi Rigid Coax

Ferroxcube VK200 20/4B

C1, C2, C8, C9

270 pF, ATC Chip Capacitor

3 Turns #16, 0.340″ I.D.,

C3, C5, C7

1.0± 20 pF, Trimmer Capacitor

Enameled Wire

15 pF, ATC Chip Capacitor

1.0 kW, 1/4 W Resistor

33 pF, ATC Chip Capacitor

R2, R3

10 kW, 1/4 W Resistor

C10, C12, C13,

Z1, Z2

0.400″

x 0.250″ , Microstrip Line

C16, C17

0.01 mF, Ceramic Capacitor

Z3, Z4

0.870″

x 0.250″ , Microstrip Line

C11

1.0 mF, 50 V, Tantalum

Z5, Z6

0.500″

x 0.250″ , Microstrip Line

C14, C15

680 pF, Feedthru Capacitor

Board material

0.060″

Teflon±fiberglass,

C18

20 mF, 50 V, Tantalum

er = 2.55, copper clad both sides, 2 oz. copper.

Figure 12. 400 MHz Test Circuit

28 V

0.200″

MOTOROLA RF DEVICE DATA	MRF275G
	7

	R1
BIAS 0 ± 6 V
	C3	C4
	R2
		T1
		C5
C1	C2

C8	C10	28 V
C8	C9	±
		±

	D.U.T.	L1
	D.U.T.	T2
		T2
		C6
		C7

C1	8.0± 60 pF, Arco 404
C2, C3, C7, C8	1000 pF, Chip Capacitor
C4, C9	0.1 mF, Chip Capacitor
C5	180 pF, Chip Capacitor
C6	100 pF and 130 pF,
	Chips in Parallel
C10	0.47 mF, Chip Capacitor, 1215 or
	Equivalent, Kemet
L1	10 Turns AWG #16, 1/4″ I.D.,
	Enamel Wire, Close Wound
L2	Ferrite Beads of Suitable Material
	for 1.5 ± 2.0 mH Total Inductance
Board material	062″ fiberglass (G10),

er ^ 5, Two sided, 1 oz. Copper.

Unless otherwise noted, all chip capacitors are ATC Type 100 or Equivalent.

R1	100 W, 1/2 W
R2	1.0 k W, 1/2 W
T1	4:1 Impedance Ratio, RF Transformer
	Can Be Made of 25 W, Semi Rigid Coax,
	47± 52 Mils O.D.
T2	1:9 Impedance Ratio, RF Transformer.
	Can Be Made of 15 ± 18 W, Semi Rigid

Coax, 62 ± 90 Mils O.D.

NOTE: For stability, the input transformer T1 should be loaded with ferrite toroids or beads to increase the common mode inductance. For operation below 100 MHz. The same is required for the output transformer.

Figure 13. 225 MHz Test Circuit

MRF275G	MOTOROLA RF DEVICE DATA
8

						L5
B1						+
B1						C19
					C17	C18
R1					C16	C22
						L6
C14	C15			L3	BEADS 1±3
C14					BEADS 1±3

	L1
C1	C5	W1	W4	C8		C10
C2	C5			C8		C11
C3		C6	C7			C9
C3		W2	W3			C12
C4		W2	W3			C13
	L2
	C20			L4	BEADS 4±6	B2
	C20			L4	BEADS 4±6	C21
						C21
			MRF275G			JL

Figure 14. MRF275G Component Location (500 MHz)

(Not to Scale)

MRF275G

Figure 15. MRF275G Circuit Board Photo Master (500 MHz) Scale 1:1 (Reduced 25% in printed data book, DL110/D)

MOTOROLA RF DEVICE DATA	MRF275G
	9

Figure 16. MRF275G Test Fixture

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate±to±drain (Cgd), and gate±to± source (Cgs). The PN junction formed during the fabrication of the MOSFET results in a junction capacitance from drain±

to±source (Cds).

These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter±terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways:

1.Drain shorted to source and positive voltage at the gate.

2.Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications.

		DRAIN
	Cgd
GATE				Ciss = Cgd + Cgs
			Cds	C	= C	gd	+ C	ds


				oss
				Crss = Cgd

Cgs

SOURCE

The Ciss given in the electrical characteristics table was measured using method 2 above. It should be noted that Ciss, Coss, Crss are measured at zero drain current and are

provided for general information about the device. They are not RF design parameters and no attempt should be made to use them as such.

LINEARITY AND GAIN CHARACTERISTICS

In addition to the typical IMD and power gain, data presented in Figure 3 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent.

DRAIN CHARACTERISTICS

One figure of merit for a FET is its static resistance in the full±on condition. This on±resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate±source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device.

GATE CHARACTERISTICS

The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high Ð on the order of 10 9 ohms Ð resulting in a leakage current of a few nanoamperes.

MRF275G	MOTOROLA RF DEVICE DATA
10

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