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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by TPV8200B/D

The RF Line

NPN Silicon

RF Power Transistor

The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

Including input and output matching networks, the TPV8200B features high impedances. It can operate over the 470 MHz to 860 MHz bandwidth using a single fixed tuned circuit.

•To be used class AB for TV band IV and V.

•Specified 28 Volts, 860 MHz Characteristics Output Power = 190 Watts (peak sync.) Output Power = 150 Watts (CW)

Gain = 8 dB Min

•Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

TPV8200B

Motorola Preferred Device

190 W, 470 ± 860 MHz RF POWER TRANSISTOR

NPN SILICON

CASE 375A±01, STYLE 1

Rating		Symbol		Value		Unit

Collector±Emitter Voltage		VCEO		30		Vdc
Collector±Base Voltage		VCBO		65		Vdc
Emitter±Base Voltage		VEBO		4		Vdc
Collector±Current Ð Continuous		IC		20		Adc
Total Device Dissipation @ TC = 25°C		PD		250		Watts
Derate above 25°C				1.43		W/°C

Quiescent Current (without RF drive)		ICQ		2 x 500		mAdc
Storage Temperature Range		Tstg	± 65 to +150			°C
THERMAL CHARACTERISTICS

Characteristic		Symbol		Max		Unit

Thermal Resistance, Junction to Case (1)		RθJC		0.7		°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic	Symbol	Min	Typ		Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Breakdown Voltage	V(BR)CEO	30	35		Ð	Vdc
(IC = 20 mAdc, IB = 0)
Collector±Base Breakdown Voltage	V(BR)CBO	65	80		Ð	Vdc
(IC = 20 mAdc, IE = 0)
Emitter±Base Breakdown Voltage (IE = 20 mAdc, IC = 0)	V(BR)EBO	4	5		Ð	Vdc
Collector±Emitter Leakage Current (VCE = 28 Vdc, RBE = 75 Ω)	ICER	Ð	Ð		15	mAdc

NOTE:	(continued)
1. Thermal resistance is determined under specific RF condition.
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 6

Motorola, Inc. 1994

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

ON CHARACTERISTICS

DC Current Gain (ICE = 2 Adc, VCE = 10 Vdc)

hFE

120

DYNAMIC CHARACTERISTICS

Output Capacitance (each side) (2)

Cob

(VCB = 28 Vdc, IE = 0, f = 1 MHz)

FUNCTIONAL TESTS IN CW

Common±Emitter Amplifier Power Gain

Gpe

9.5

(VCE = 28 Vdc, Pout = 150 W, ICQ = 2 x 75 mA, f = 860 MHz)

Collector Efficiency

(VCE = 28 Vdc, Pout = 150 W, ICQ = 2 x 75 mA, f = 860 MHz)

Output Power @ 1 dB Compression (Pref = 40 W)

Pout

150

165

(VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz)

Input overdrive: no degradation

(VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz)

Output Mismatch Stress:

No Degradation in Output Power

(VCE = 28 Vdc, Pout = 120 W, ICQ = 2 x 75 mA, f = 860 MHz,

Before or After Test

Load VSWR = 3:1, all phase angles at frequency of test)

FUNCTIONAL TESTS IN VIDEO (Standard Black Level)

Peak Output Power @ 1 dB Compression

Pout

190

210

(VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz)

NOTE:

2. Value of ªC º is that of die only. It is not measurable in TPV8200B because of internal matching network.

VCC

C11

C10

D.U.T.

INPUT

OUTPUT

C1 Ð Chip Capacitor 47 pF ATC 100A

C8 Ð Capacitor 220

mF/16 V

R3 Ð Resistor 0.8

C2 Ð Chip Capacitor 12 pF ATC 100B

C9 Ð Capacitor 100

mF/40 V

R4 Ð Resistor 47

C2 Ð + Trimmer Capacitor 0.5± 4 pF

C10 Ð Chip Capacitor 100 pF Vitramon

R5 Ð Resistor 1.2 k W

C3 Ð Chip Capacitor 8.2 pF ATC 100B

C11 Ð Chip Capacitor 15 nF Vitramon

P1 Ð Trimmer Resistor 5 k W

C4 Ð Chip Capacitor 12 pF ATC 100B

L1 Ð Coaxial 25 W / length = 41 mm

T1 Ð Transistor BD 135

C5 Ð Chip Capacitor 100 pF ATC 100A

L2 Ð Coaxial 25 W / length = 41 mm

T2 Ð Transistor BD 135

C6 Ð Chip Capacitor 2 x 1000 pF Vitramon

R1 Ð Chip Resistor 47 W

PC Board: 1/50″ Glass Teflon

r = 2.55

C7 Ð Chip Capacitor 2 x 0.1

mF Vitramon

R2 Ð 2 x 1 W (0.5 W)

Figure 1. 860 MHz Test Circuit

TPV8200B

MOTOROLA RF DEVICE DATA

INPUT

OUTPUT

Figure 2. Components View

CAUTION

The TPV8200B is a high power transistor and thermal adaptation is very important for good RF performance

(see mechanical drawing for mounting recommendations).

Maximum Ratings are given to avoid destruction of the transistor; another limitation is MMMTBF and the user must first determine the minimum wanted life±time in order to choose the right way of use for the device (see MMMTBF curves), especially in case of CW application.

MOTOROLA RF DEVICE DATA	TPV8200B
	3

			TYPICAL CHARACTERISTICS
POWER(WATTS)	230		GAINPOWER(dB)	13
POWER(WATTS)	170		GAINPOWER(dB)	10
	210			12
	190			11
OUTPUT,			G		V		= 28 V
			,
			pe
o	150		VCE = 28 V	9		CE
P			VCE = 28 V		ICQ = 2 x 75 mA
			ICQ = 2 x 75 mA		ICQ = 2 x 75 mA
			ICQ = 2 x 75 mA		Pout = 150 W
					Pout = 150 W
	130			8
	470	665	860	470	665		860
		f, FREQUENCY (MHz)			f, FREQUENCY (MHz)

Figure 3. Output Power @ 1 dB Comp.

Figure 4. Power Gain versus Frequency

versus Frequency

						60
(WATTS)	150					50
						50
					(%)	40
OUTPUT POWER	100				η , EFFICIENCY
						30
	50	V		= 28 V		20
	50	V	CE	= 28 V
,			CE
o		ICQ = 2 x 75 mA
P		ICQ = 2 x 75 mA				10
		f = 860 MHz				10
		f = 860 MHz
	0					0
	0	10			20

			VCE = 28 V
			ICQ = 2 x 75 mA
			f = 860 MHz
0	50	100	150

INPUT POWER (WATTS)	OUTPUT POWER (WATTS)
Figure 5. Output Power versus Input Power	Figure 6. Collector Efficiency versus Output Power

	±20					±20
			±5 dB	VCE = 28 V
		IMD	±5 dB	ICQ = 2 x 75 mA
(dB)		IMD	±17 dB	f = 860 MHz	(dB)
(dB)	±30				(dB)	±30
INTERMODULATION	±30				INTERMODULATION	±30
	±40					±40

	±50					±50
	50	100	150	200	250

	VCE = 28 V
	ICQ = 2 x 75 mA
	f = 860 MHz
		IMD	0 dB
		IMD	±7 dB
			±7 dB
25	50	75	100

Po, OUTPUT POWER (WATTS)

Figure 7. Intermodulation versus Peak Power	Figure 8. Intermodulation versus Peak Power
(Side Band)	(Dual Sound)

TPV8200B	MOTOROLA RF DEVICE DATA
4

			TYPICAL VIDEO CHARACTERISTICS @ f = 860 MHz
						VCE = 28 V
		VCE = 28 V	100						VCE = 28 V
	ICQ = 2 x 75 mA		100	(Input Video Waveform)					ICQ = 2 x 75 mA	(Input Video Waveform)
	ICQ = 2 x 75 mA			(Input Video Waveform)					ICQ = 2 x 75 mA	(Input Video Waveform)
		f = 860 MHz	0						f = 860 MHz	27%
		(Channel 69)							(Channel 69)	27%
		(Channel 69)							(Channel 69)	0%
		Black Level	40						Black Level	0%
							30
POWER (WATTS)	200
	150					PULSE (%)	25
	150

OUTPUT	100					SYNC.	20
							20

,
o
P
	50
	5	10		15	20	25	15	0	50	100	150	200
	5	10		15	20	25		0	50	100	150	200

Pin, INPUT POWER (WATTS)	Po, OUTPUT POWER (WATTS)
Figure 9. Peak Output Power versus Peak	Figure 10. Sync. Pulse versus Peak
Input Power	Output Power

TEST CONDITIONS: 10% Rest Carrier Channel 69

VCE = 28 V ICQ = 2 x 75 mA

(Input Video Waveform)

	%			%			%
	%			%			%
		100			100			100


		90			90			90


		80			80			80


		70			70			70


		60			60			60


		50			50			50


		40			40			40


		30			30			30


		20			20			20


		10			10			10


		0			0			0



Pout = 100 W			Pout = 150 W			Pout = 210 W			Pout = 210 W
									APL 10±90 (%)

Figure 11. Gain versus Output Power

MOTOROLA RF DEVICE DATA	TPV8200B
	5

Zin

f = 470 MHz

860

470

ZOL*

f = 860 MHz

Zo = 10 Ω

f	Zin	ZOL*
MHz	Ohms	Ohms

470	0.80 + j2.11	7.93 + j0.94
567	0.85 + j3.15	5.94 + j0.30
665	1.56 + j4.20	4.55 ± j0.02
762	2.64 + j3.36	3.70 ± j0.52
860	2.72 + j2.24	2.91 ± j0.92

ZOL* = Conjugate of optimum load impedance into which

ZOL* = the device operates at a given output power,

ZOL* = voltage, current, and frequency.

Base±base & collector±collector Impedances with

Circuit Tuned for Maximum Gain @ VCE = 28 V/ ICQ = 2 x 75 mA/ Pout = 150 W

Figure 12. Series Equivalent Input/Output Impedances

RELIABILITY DEPENDENCE ON THERMAL CONSIDERATIONS

MMMTBF: Metal Migration Mean Time Before Failure.

	0.80					1011
, JUNCTION ± CASE (°C/W)	0.75					1010
						)
						2
	0.70					109
	0.65					108
						(HOURS.MMMTBFA
th	0.60					107
R	0.60					107
	0.55					106
	50	100	150	200	250	50
		JUNCTION TEMPERATURE (°C)

100

150

200

250

JUNCTION TEMPERATURE (°C)

Figure 13. Thermal Resistance versus Junction Temperature

TYPICAL CONDITIONS (120 W CW):

Pout = 120 W Pin = 15 W VCE = 28 V η = 45%

ICQ = 9.5 A RTH = 0.7°C/W Tmax = 70°C

	Pdiss = 161 W
			MTBF =
	Tjct = 183°C
			26 YEARS
	J = (5.64) 104 A/cm2

Figure 14. MMMTBF versus Junction Temperature

TYPICAL CONDITIONS (210 W VIDEO):

Pout = 70 W Pin = 7.8 W VCE = 28 V η = 38%

ICQ = 6.6 A RTH = 0.7°C/W Tmax = 70°C

	Pdiss = 123 W
			MTBF =
	Tjct = 156°C
			252 YEARS
	J = (3.92) 104 A/cm2

TPV8200B	MOTOROLA RF DEVICE DATA
6

PACKAGE DIMENSIONS

	G	Q 2 PL
	G	0.25 (0.010) M		T	B	M	NOTES:
	L	0.25 (0.010) M		T	B	M	NOTES:
	L						1. DIMENSIONING AND TOLERANCING PER ANSI
							Y14.5M, 1982.
	1	2					2. CONTROLLING DIMENSION: INCH.
								INCHES		MILLIMETERS
K	R	±B±					DIM	MIN	MAX	MIN	MAX
K	R	±B±					A	1.330	1.350	33.79	34.29
		5					A	1.330	1.350	33.79	34.29
		5					B	0.375	0.395	9.52	10.03
	3	4					C	0.180	0.205	4.57	5.21
	3	4					D	0.320	0.340	8.13	8.64
							D	0.320	0.340	8.13	8.64
	D						E	0.060	0.070	1.52	1.77
	D						F	0.004	0.006	0.11	0.15
							G	1.100 BSC		27.94 BSC
							H	0.082	0.097	2.08	2.46
E	N	F					K	0.580	0.620	14.73	15.75
E	N	F					L	0.435 BSC		11.05 BSC
							N	0.845	0.875	21.46	22.23
							Q	0.118	0.130	3.00	3.30
H							R	0.390	0.410	9.91	10.41
H		±T±	SEATING
		±T±	SEATING				STYLE 1:
	A		PLANE				PIN 1. COLLECTOR
		C					PIN 1. COLLECTOR
								2. COLLECTOR
								2. COLLECTOR
								3. BASE
								4. BASE
		CASE 375A±01						5. EMITTER
		CASE 375A±01
		ISSUE O

MOTOROLA RF DEVICE DATA	TPV8200B
	7

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

◊	TPV8200B/D
	TPV8200B/D

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