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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF492/D

The RF Line

NPN Silicon

RF Power Transistor

Designed for 12.5 volt low band VHF large±signal power amplifier applications in commercial and industrial FM equipment.

Specified 12.5 V, 50 MHz Characteristics Ð Output Power = 70 W

Minimum Gain = 11 dB Efficiency = 50%

Load Mismatch Capability at High Line and RF Overdrive

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

 

 

 

 

Collector±Emitter Voltage

VCEO

18

Vdc

Collector±Base Voltage

VCBO

36

Vdc

Emitter±Base Voltage

VEBO

4.0

Vdc

Collector Current Ð Continuous

IC

20

Adc

Total Device Dissipation @ TC = 25°C (1)

PD

250

Watts

Derate above 25°C

 

1.43

W/°C

 

 

 

 

Storage Temperature Range

Tstg

± 65 to +150

°C

THERMAL CHARACTERISTICS

MRF492

70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON

CASE 211±11, STYLE 1

Characteristic

 

Symbol

Max

 

Unit

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case (2)

 

RθJC

0.7

 

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Min

Typ

 

Max

Unit

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0)

V(BR)CEO

18

Ð

 

Ð

Vdc

Collector±Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)

V(BR)CES

36

Ð

 

Ð

Vdc

Emitter±Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

V(BR)EBO

4.0

Ð

 

Ð

Vdc

Collector Cutoff Current (VCE = 13.6 Vdc, VBE = 0)

ICES

Ð

Ð

 

20

mAdc

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)

hFE

10

Ð

 

150

Ð

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz)

Cob

Ð

275

 

450

pF

FUNCTIONAL TESTS

 

 

 

 

 

 

 

 

 

 

 

 

 

Common±Emitter Amplifier Power Gain

GPE

11

13

 

Ð

dB

(VCC = 12.5 Vdc, Pout = 70 W, f = 50 MHz)

 

 

 

 

 

 

Collector Efficiency

η

50

Ð

 

Ð

%

(VCC = 12.5 Vdc, Pout = 70 W, f = 50 MHz)

 

 

 

 

 

 

NOTES:

 

 

 

 

 

 

1.These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers.

2.Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

Motorola, Inc. 1994

 

 

 

 

 

+12.5 Vdc

 

 

 

+

 

 

 

 

 

C6

C7

 

 

 

RFC2

±

 

 

 

 

 

 

 

 

 

 

L2

L3

C8

 

 

 

 

 

RF

 

 

 

 

 

OUTPUT

C1

L1

 

 

 

 

RF

 

 

DUT

 

 

INPUT

 

 

 

 

 

 

 

 

 

 

 

RFC1

C3

C4

 

 

 

 

 

 

C2

C5

 

 

 

 

 

 

BEAD

 

 

 

C1, C8 Ð 9.0± 180 pF, Arco 463

RFC2 Ð 12 Turns, #16 AWG, Enameled Wire Closewound

C2, C3, C4 Ð 80± 480 pF, Arco 466

RFC2 Ð on a 2.0 W Carbon Resistor

 

C5 Ð 1000 pF, 350 V, Unelco

L1 Ð 2 Turns, #18 AWG Enameled Wire, 0.4 ″ ID, 0.15″ Long

C6 Ð 10 mF, 25 Vdc

 

L2 Ð Loop, #12 AWG Wire, 0.6 ″

High, 0.4″ Wide

C7 Ð 0.01 mF, Ceramic

 

L3 Ð 2 Turns, #12 AWG Wire, ID 0.4 ″ , 0.25″

Long

RFC1 Ð 10 mH Molded Choke

Bead Ð Ferrite Bead Ferroxcube #56±590±65/3B

Figure 1. 50 MHz Test Circuit

 

100

 

 

 

 

 

 

 

 

 

 

(WATTS)

 

VCC = 12.5 V

 

 

 

 

 

 

 

 

80

f = 50 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

POWER

60

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, OUTPUT

40

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

out

20

 

 

 

 

 

 

 

 

 

 

P

 

 

 

 

 

 

 

 

 

 

 

0

1

2

3

4

5

6

7

8

9

10

 

0

Pin, INPUT POWER (WATTS)

Figure 2. Output Power versus Input Power

 

20

 

 

 

 

 

 

 

 

VCC = 12.5 V

 

 

 

 

 

(dB)

18

Pout = 70 W

 

 

 

 

 

 

 

 

 

 

 

 

POWER GAIN

16

 

 

 

 

 

 

14

 

 

 

 

 

 

,

 

 

 

 

 

 

 

PE

 

 

 

 

 

 

 

G

 

 

 

 

 

 

 

 

12

 

 

 

 

 

 

 

10

25

30

35

40

45

50

 

20

f, FREQUENCY (MHz)

Figure 3. Power Gain versus Frequency

MRF492

MOTOROLA RF DEVICE DATA

2

 

 

140

 

 

 

 

 

 

 

 

 

 

 

 

f = 50 MHz

 

 

 

 

 

 

 

 

(WATTS)

120

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

Pin = 8 W

 

 

 

 

 

POWER

80

 

 

 

 

4 W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, OUTPUT

60

 

 

 

 

2 W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

40

 

 

 

 

 

 

 

 

 

 

out

 

 

 

 

 

 

 

 

 

 

 

P

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

8

9

10

11

12

13

14

15

16

17

 

7

 

 

 

 

VCC, SUPPLY VOLTAGE (VOLTS)

 

 

 

Figure 4. Output Power versus Supply Voltage

0

± j1.0

± j2.0

50

Zin 1.0

30

f = 25 MHz

Zo = 10 Ω

2.0

 

 

 

 

 

1.0

 

 

0

 

 

 

 

 

2.0

 

50

 

 

 

VCC = 12.5 V, Pout = 70 W

30

 

1.0

 

 

 

3.0

 

 

f

 

Zin

ZOL*

 

f = 25 MHz

ZOL*

 

MHz

 

Ohms

Ohms

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

25

 

1.12 ± j1.28

0.85 ± j1.46

 

 

 

 

 

 

 

 

 

 

 

 

30

 

0.93 ± j1.24

0.76 ± j1.3

 

 

 

 

 

3.0

50

 

0.7 ± j1.17

0.58 ± j1.0

 

 

Zo = 10 Ω

 

 

 

 

 

 

ZOL* = Conjugate of the optimum load

 

 

 

 

4.0

ZOL* = impedance into which the device

 

 

 

 

 

ZOL* = output operates at a given output

 

 

 

 

5.0

ZOL* = power, voltage and frequency.

 

 

 

 

 

Figure 5. Series Equivalent Input/Output Impedances

MOTOROLA RF DEVICE DATA

MRF492

 

3

PACKAGE DIMENSIONS

 

A

 

NOTES:

 

 

 

 

 

U

 

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

M

 

 

 

Y14.5M, 1982.

 

 

 

 

 

 

2. CONTROLLING DIMENSION: INCH.

1

M

 

 

INCHES

MILLIMETERS

Q

 

 

4

 

DIM

MIN

MAX

MIN

MAX

 

 

A

0.960

0.990

24.39

25.14

 

 

 

 

R

B

B

0.465

0.510

11.82

12.95

 

C

0.229

0.275

5.82

6.98

 

 

 

D

0.216

0.235

5.49

5.96

 

 

 

E

0.084

0.110

2.14

2.79

2

3

 

H

0.144

0.178

3.66

4.52

 

J

0.003

0.007

0.08

0.17

 

D

 

K

0.435

±±±

11.05

±±±

 

 

M

45

NOM

45

NOM

K

 

 

 

 

Q

0.115

0.130

2.93

3.30

 

 

 

R

0.246

0.255

6.25

6.47

J

 

 

U

0.720

0.730

18.29

18.54

 

 

 

 

 

 

 

 

C

 

STYLE 1:

 

H

 

PIN 1.

EMITTER

E

SEATING

2.

BASE

 

3.

EMITTER

 

 

PLANE

 

 

4.

COLLECTOR

 

 

 

CASE 211±11

ISSUE N

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MRF492/D

 

*MRF492/D*

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