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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by TPV8100B/D

The RF Line

NPN Silicon

RF Power Transistor

The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

Including double input and output matching networks, the TPV8100B features high impedances. It can easily operate in a full 470 MHz to 860 MHz bandwidth in a single and simple circuit.

•To be used class AB for TV band IV and V.

•Specified 28 Volts, 860 MHz Characteristics Output Power = 125 Watts (peak sync.) Output Power = 100 Watts (CW) Minimum Gain = 8.5 dB

•Specified 32 Volts, 860 MHz Characteristics Output Power = 150 Watts (peak sync.)

•Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

TPV8100B

150 W, 470 ± 860 MHz

NPN SILICON

RF POWER TRANSISTOR

CASE 398±03, STYLE 1

Rating		Symbol		Value		Unit

Collector±Emitter Voltage		VCER		40		Vdc
Collector±Base Voltage		VCBO		65		Vdc
Emitter±Base Voltage		VEBO		4		Vdc
Collector±Current Ð Continuous		IC		12		Adc
Total Device Dissipation @ 25°C Case		PD		215		Watts
Derate above 25°C				1.25		W/°C

Operating Junction Temperature		TJ		200		°C
Storage Temperature Range		Tstg	± 65 to +150			°C
THERMAL CHARACTERISTICS

Characteristic		Symbol		Max		Unit

Thermal Resistance, Junction to Case (1)		RθJC		0.8		°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic	Symbol	Min	Typ		Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Breakdown Voltage	V(BR)CER	30	Ð		Ð	Vdc
(IC = 10 mA, Rbe = 75 Ω)
Collector±Emitter Breakdown Voltage	V(BR)EBO	4	Ð		Ð	Vdc
(IC = 10 mAdc)
Collector±Base Breakdown Voltage	V(BR)CBO	65	Ð		Ð	Vdc
(IE = 20 mAdc)
Collector±Emitter Leakage	ICER	Ð	Ð		10	mA
(VCE = 28 V, Rbe = 75 Ω)
NOTE:						(continued)

1. Thermal resistance is determined under specified RF operating condition.

REV 6

Motorola, Inc. 1994

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

ON CHARACTERISTICS

DC Current Gain	hFE	30	Ð	120	Ð
(IC = 2 Adc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS

Output Capacitance (each side) (2)	Cob	Ð	44	Ð	pF
(VCB = 28 V, IE = 0, f = 1 MHz)
FUNCTIONAL TESTS IN CW (SOUND)

Common±Emitter Amplifier Power Gain	Gp	8.5	9.5	Ð	dB
(VCC = 28 V, Pout = 100 W, ICQ = 2 x 50 mA, f = 860 MHz)
Collector Efficiency	η	55	58	Ð	%
(VCC = 28 V, Pout = 100 W, IQ = 2 x 50 mA, f = 860 MHz)
Output Power @ 1 dB Compression (Pref = 25 W)	Pout	100	110	Ð	W
(VCC = 28 V, ICQ = 2 x 50 mA, f = 860 MHz)
FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL)

Peak Output Power (synch.)	Pout	125	135	Ð	W
(VCC = 28 V, ICQ = 2 x 50 mA, f = 860 MHz)
Peak Output Power (synch.)	Pout	150	160	Ð	W
(VCC = 32 V, ICQ = 2 x 25 mA, f = 860 MHz)
Recommended Quiescent Current	ICQ	Ð	Ð	2 x 0.3	A

NOTE:

2. Value of ªC º is that of die only. It is not measurable in TPV8100B because of internal matching network. ob

0.0

f = 470 MHz

f = 860

Zin
665	860
	470		f	Zin	ZOL*
	470		(MHz)	(Ohms)	(Ohms)
			(MHz)	(Ohms)	(Ohms)
ZOL*			470	1.95 + j3.67	10.0 + j9.50
			470	1.95 + j3.67	10.0 + j9.50
665	Zo = 10 Ω	8	665	3.65 + j6.82	9.23 + j1.30
665	Zo = 10 Ω	8	860	6.66 + j13.8	4.45 + j5.22
			ZOL* = Conjugate of optimum load impedance into which
			ZOL* = the device operates at a given output power,
			ZOL* = voltage, current and frequency.
			NOTE: Zin & ZOL* are given from base±to±base and
			NOTE: collector±to±collector respectively.

Input and Output impedances with circuit tuned for maximum linearity @ VCC = 28 V / ICQ = 2 x 50 mA / Pout = 100 W

Figure 1. Series Equivalent Input/Output Impedances

TPV8100B	MOTOROLA RF DEVICE DATA
2

IN							OUT
50 Ω	C4						50 Ω
		L1	C12			L3
		C5		C6	C7	L3
		C5		C6	C7		C8
	R1	L2			L4		C8
VB	R1	L2			L4		VC
VB							VC
	R2			D.U.T.	C9	C10	+
				D.U.T.	C9	C10	C11
C1	C2	+
C1	C2	C3

C1, C9 Ð Chip Capacitor 15 nF

C2, C10 Ð Chip Capacitor 100 nF

C3, C11 Ð Chip Capacitor 100 μF/40 V

C4 Ð Chip Capacitor 15 pF ATC 100A

C5 Ð Chip Capacitor 5.6 pF ATC 100A

C6 Ð Trimmer Capacitor 1±4 pF

C7 Ð Chip Capacitor 12 pF ATC 100B

C8 Ð Chip Capacitor 15 pF ATC 100A

C12 Ð Chip Capacitor 12 pF ATC 100A

L1, L3 Ð Coaxial Wire 25 Ω/85 Mils/40 mm

L2, L4 Ð Printed Board Inductance

R1, R2 Ð Chip Resistor 1 Ω 0805 5%

Figure 2. Test Circuit

TYPICAL CHARACTERISTICS

CW Ð WIDEBAND

10		60
9		50
POWERGAIN(dB)		EFFICIENCY(%)
,
P	Pout = 100 W	η,
G	Pout = 100 W	η,
8	VCE = 28 V	40
	ICQ = 2 x 50 mA
450	900

	Pout = 100 W
	VCE = 28 V
	ICQ = 2 x 50 mA
450	900

f, FREQUENCY (MHz)	f, FREQUENCY (MHz)
Figure 3. Power Gain versus Frequency	Figure 4. Collector Efficiency versus Frequency

MOTOROLA RF DEVICE DATA	TPV8100B
	3

TYPICAL VIDEO CHARACTERISTICS @ f = 800 MHz

VCE = 28 V

								100
							IRE	0	Black		VIDEO SIGNAL
									Black

								40
	150									150
(WATTS)	100								(WATTS)	100
POWER	100								POWER	100
POWER									POWER
, OUTPUT					TEST CONDITIONS:				, OUTPUT					TEST CONDITIONS:
						STANDARD BLACK LEVEL									STANDARD BLACK LEVEL
	50					CHANNEL 61				50					CHANNEL 61
o						ICQ = 2 x 50 mA			o						ICQ = 2 x 300 mA
P						ICQ = 2 x 50 mA			P						ICQ = 2 x 300 mA
						VCE = 28 V									VCE = 28 V
	20	4	6	8	10	12	14	16		20	4	6	8	10	12	14	16
	2	4	6	8	10	12	14	16		2	4	6	8	10	12	14	16

Pin, INPUT POWER (WATTS)	Pin, INPUT POWER (WATTS)
Figure 5. Peak Output Power versus Peak	Figure 6. Peak Output Power versus Peak
Input Power	Input Power

			TEST CONDITIONS:			100
			TEST CONDITIONS:
				DIFF. Gain, 10 Steps
				DIFF. Gain, 10 Steps		IRE				VIDEO SIGNAL
				Channel 61		IRE				VIDEO SIGNAL
				Channel 61		0
				VCE = 28 V		0
						40
						40
ICQ = 2 x 50 mA		%			ICQ = 2 x 150 mA		%			ICQ = 2 x 300 mA


				100				100


				90				90
				90				90
				80				80
				80				80
				70				70
				70				70
				60				60
				60				60
				50				50
				50				50
				40				40
				40				40
				30				30
				30				30
				20				20
				20				20
				10				10
				10				10
				0				0
				0				0

Pout = 100 W	Pout = 130 W				Pout = 100 W	Pout = 130 W			Pout = 100 W		Pout = 110 W

Figure 7. Gain versus Output Power

TPV8100B	MOTOROLA RF DEVICE DATA
4

				TYPICAL VIDEO CHARACTERISTICS @ f = 800 MHz
							VCE = 32 V
						100
					IRE		Black		VIDEO SIGNAL
						0	Black
						0
						40
(WATTS)	150
(WATTS)									VCE = 32 V, ICQ = 2 x 25 mA
									VCE = 32 V, ICQ = 2 x 25 mA
POWER	100								Pout	Gain
POWER	100								25 W	10.6 dB
OUTPUT,									120 W	11.1 dB
					TEST CONDITIONS:				50 W	11.1 dB
						STANDARD BLACK LEVEL			100 W	11.3 dB
						STANDARD BLACK LEVEL
o	50					CHANNEL 61
o						ICQ = 2 x 25 mA
P						ICQ = 2 x 25 mA			130 W	11.0 dB
						VCE = 32 V			140 W	10.7 dB
	20								150 W	10.5 dB
	2	4	6	8	10	12	14	16	160 W	10.2 dB
				Pin, INPUT POWER (WATTS)					(see curve on left)
									(see curve on left)

Figure 8. Peak Output Power versus Peak

Input Power

	TEST CONDITIONS:					100
	TEST CONDITIONS:
		DIFF. Gain, 10 Steps						VIDEO SIGNAL
		DIFF. Gain, 10 Steps
		Channel 61			IRE	0
		VCE = 32 V
		VCE = 32 V
		ICQ = 2 x 25 mA				40
		ICQ = 2 x 25 mA
	%					%
			100			100


			90			90
			90			90
			80			80
			80			80
			70			70
			70			70
			60			60
			60			60
			50			50
			50			50
			40			40
			40			40
			30			30
			30			30
			20			20
			20			20
			10			10
			10			10
			0			0
			0			0

Pout = 100 W				Pout = 130 W			Pout = 150 W

Figure 9. Differential Gain

MOTOROLA RF DEVICE DATA	TPV8100B
	5

Vb						Vc

	C1 C2				C9 C10
C4	R1	C5	C6	C7	C8
C4		C5	C6	C7	C8
	R2

C11

		Figure 10. Components View
		PACKAGE DIMENSIONS
±A±
U		Q							NOTES:
									NOTES:
1	2	0.025 (0.010) M		T	A	M	B	M	1. DIMENSIONING AND TOLERANCING PER ANSI
1	2								Y14.5M, 1982.
									2. CONTROLLING DIMENSION: INCH.
										INCHES		MILLIMETERS
		±B±							DIM	MIN	MAX	MIN	MAX
		±B±							A	1.094	1.110	27.79	28.19
									A	1.094	1.110	27.79	28.19
		5							B	0.457	0.465	11.61	11.81
		5							C	0.165	0.182	4.25	4.62
									C	0.165	0.182	4.25	4.62
3	4	K							D	0.121	0.131	3.08	3.32
3	4	K							E	0.055	0.065	1.40	1.65
									G	0.177	0.185	4.50	4.69
		D							H	0.081	0.091	2.06	2.31
		G							J	0.002	0.004	0.06	0.10
		G							K	0.142	0.163	3.60	4.14
									N	0.510	0.520	12.95	13.21
N									Q	0.125	0.135	3.18	3.42
N		E							U	0.844 BSC		21.44 BSC
J		E
		C							STYLE 1:
		C							PIN 1. COLLECTOR
		±T±	SEATING							2. COLLECTOR
H		±T±	PLANE							3. BASE
H										4. BASE
										5. EMITTER

CASE 398±03

ISSUE C

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

◊	TPV8100B/D
	TPV8100B/D

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