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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF899/D

The RF Line

NPN Silicon

RF Power Transistor

Designed for 26 Volt UHF large±signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800±960 MHz.

Specified 26 Volt, 900 MHz Characteristics Output Power = 150 Watts (PEP)

Minimum Gain = 8.0 dB @ 900 MHz, Class AB

Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP) Maximum Intermodulation Distortion ±28 dBc @ 150 Watts (PEP)

Characterized with Series Equivalent Large±Signal Parameters from 800 to 960 MHz

Silicon Nitride Passivated

100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

MRF899

150 W, 900 MHz

RF POWER

TRANSISTOR NPN SILICON

CASE 375A±01, STYLE 1

Rating

Symbol

Value

Unit

 

 

 

 

Collector±Emitter Voltage

VCEO

28

Vdc

Collector±Emitter Voltage

VCES

60

Vdc

Emitter±Base Voltage

VEBO

4.0

Vdc

Collector±Current Ð Continuous

IC

25

Adc

Total Device Dissipation @ TC = 25°C

PD

230

Watts

Derate above 25°C

 

1.33

W/°C

 

 

 

 

Storage Temperature Range

Tstg

± 65 to + 150

°C

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

RθJC

0.75

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

OFF CHARACTERISTICS

Collector±Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0)

V(BR)CEO

28

37

Ð

Vdc

Collector±Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)

V(BR)CES

60

85

Ð

Vdc

Emitter±Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

V(BR)EBO

4.0

4.9

Ð

Vdc

Collector Cutoff Current (VCE = 30 Vdc, VBE = 0)

ICES

Ð

Ð

10

mAdc

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc)

hFE

30

75

120

Ð

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1)

Cob

Ð

75

Ð

pF

(1) For information only. This part is collector matched.

 

 

 

 

(continued)

REV 7

 

 

 

 

 

 

 

 

 

 

 

MOTOROLAMotorola, Inc. 1997RF DEVICE DATA

 

 

 

 

MRF899

 

 

 

 

 

1

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

 

Typ

Max

 

Unit

 

 

 

 

 

 

 

 

FUNCTIONAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common±Emitter Amplifier Power Gain

Gpe

8.0

 

9.0

Ð

 

dB

VCC = 26 Vdc, Pout = 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz,

 

 

 

 

 

 

 

f2 = 900.1 MHz

 

 

 

 

 

 

 

Collector Efficiency

h

30

 

40

Ð

 

%

VCC = 26 Vdc, Pout = 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz,

 

 

 

 

 

 

 

f2 = 900.1 MHz

 

 

 

 

 

 

 

3rd Order Intermodulation Distortion

IMD

Ð

 

± 32

±28

 

dBc

VCC = 26 Vdc, Pout = 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz,

 

 

 

 

 

 

 

f2 = 900.1 MHz

 

 

 

 

 

 

 

Output Mismatch Stress

y

 

No Degradation in Output Power

 

VCC = 26 Vdc, Pout = 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz,

 

 

 

Before and After Test

 

f2 = 900.1 MHz, VSWR = 5:1 (all phase angles)

 

 

 

 

 

 

 

 

 

VB

 

 

 

 

 

 

 

VCC

VBB

R1b

 

 

 

 

 

 

 

 

 

 

C5

C7

C10

C12

C14

C17

 

COAX 1

 

R2

L4

 

 

 

 

 

 

 

 

 

 

 

R3

L6

 

 

BALUN 2

 

C3

 

 

 

 

C20

 

 

 

 

 

 

 

 

 

C22

TL1

 

B1

 

 

 

 

 

 

 

TL7

 

 

 

 

TL5

 

 

 

 

 

 

 

 

 

 

 

 

L7

 

 

 

L2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C24

 

 

 

 

 

 

 

 

 

 

 

 

C1

 

TL3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

INPUT

C2

 

C9

 

 

C16

 

 

C19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TL4

 

 

 

 

 

 

 

 

 

L3

 

 

D.U.T.

TL6

 

 

C25

 

TL2

 

 

 

 

 

 

 

L9

 

B2

 

 

 

 

 

 

 

TL8

L1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

+

 

BALUN 1

 

 

 

 

 

 

 

 

 

 

 

 

L5

 

 

R4

L8

 

C21

C23

 

 

R3

C27+

 

+

 

 

 

C4

 

 

 

 

 

 

COAX 2

R1a

 

 

 

+

C13

C15

C18

 

 

 

 

C6

C8

C11

 

 

 

 

 

 

VBB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

+

 

 

Q1

 

 

 

 

 

 

 

C26

VB

 

 

 

 

 

 

 

VCC

 

 

 

 

 

 

 

 

 

 

B1, B2 Ð Ferrite Bead, Ferroxcube #56±590±65±3B

 

L1 Ð 5 Turns 24 AWG IDIA 0.059 ″ Choke, 19.8 nH

C1, C2, C24, C25 Ð 43 pF, B Case, ATC Chip Capacitor

 

L2, L3, L7, L9 Ð 4 Turns 20 AWG IDIA 0.163 ″ Choke

C3, C4, C20, C21 Ð 100 pF, B Case, ATC Chip Capacitor

 

L4, L5, L6, L8 Ð 12 Turns 22 AWG IDIA 0.140 ″ Choke

C5, C6, C12, C13 Ð 1000 pF, B Case, ATC Chip Capacitor

 

N1, N2 Ð Type N Flange Mount, Omni Spectra

C7, C8, C14, C15 Ð 1800 pF, AVX Chip

Capacitor

 

Q1 Ð Bias Transistor BD136 PNP

C9 Ð 9.1 pF, A Case, ATC Chip Capacitor

 

 

R2, R3, R4, R5 Ð 4.0 x 39 Ohm 1/8 W Chips in Parallel

C10, C11, C17, C18, C22, C23 Ð 10

mF, Electrolytic Capacitor

R1a, R1b Ð 56 Ohm 1.0 W

 

Panasonic

 

 

TL1± TL8 Ð See Photomaster

C16 Ð 3.9 pF, B Case, ATC Chip Capacitor

 

 

Balun1, Balun2, Coax 1, Coax 2 Ð 2.20 ″ 50 Ohm 0.088″ o.d.

C19 Ð 0.8 pF, B Case, ATC Chip Capacitor

 

 

 

 

 

 

 

Semi±rigid Coax, Micro Coax

C26 Ð 200 mF, Electrolytic Capacitor Mallory Sprague

 

Board Ð 1/32 ″

Glass Teflon, er = 2.55″ Arlon (GX±0300±55±22)

C27 Ð 500 mF Electrolytic Capacitor

 

 

 

 

 

 

 

 

 

Figure 1. 900 MHz Power Gain Test Circuit

MRF899

MOTOROLA RF DEVICE DATA

2

 

 

200

 

 

 

 

f = 800 MHz

 

 

 

 

 

 

 

 

 

 

(WATTS)

175

 

 

 

 

 

 

(WATTS)

150

 

 

 

 

900 MHz

POWER

125

 

 

 

 

960 MHz

 

POWER

 

 

 

 

 

 

 

OUTPUT,

100

 

 

 

 

 

 

OUTPUT,

75

 

 

 

 

 

 

 

 

 

 

 

 

 

 

out

50

 

 

 

 

 

 

out

 

 

 

 

 

 

 

P

 

 

 

 

 

VCC = 26 Vdc

 

P

 

25

 

 

 

 

 

 

 

 

 

 

 

Icq = 300 mA

 

 

 

0

 

 

 

 

 

 

 

0

5

10

15

20

25

30

 

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin

= 30 W

175

 

 

 

 

 

 

 

 

 

 

 

 

 

24 W

150

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

18 W

 

 

 

 

 

 

 

 

125

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

12 W

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

75

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6 W

50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = 26 Vdc

25

 

 

 

 

 

 

 

 

 

 

Icq = 300 mA

0

 

 

 

 

 

 

 

 

 

 

 

 

 

800 820 840 860 880 900 920 940 960

Pin, INPUT POWER (WATTS)

f, FREQUENCY (MHz)

Figure 2. Output Power versus Input Power

Figure 3. Output Power versus Frequency

 

200

 

 

 

 

 

 

Pin = 24 W

 

 

 

 

 

 

 

 

 

 

(WATTS)

175

 

 

 

 

 

 

 

 

150

 

 

 

 

 

 

 

 

125

 

 

 

 

 

 

16 W

POWER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

,OUTPUT

 

 

 

 

 

 

 

8 W

75

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

out

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

P

25

 

 

 

 

 

 

f = 900 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Icq = 300 mA

 

 

0

 

 

 

 

 

 

 

 

14

16

18

20

22

24

26

28

30

VCC, COLLECTOR VOLTAGE (VOLTS)

Figure 4. Output Power versus Supply Voltage

(dBc)

± 20

 

 

 

 

 

 

 

 

 

 

 

 

 

3rd Order

 

DISTORTION

± 30

 

 

 

 

 

 

 

 

 

 

 

 

 

5th

 

± 40

 

 

 

 

 

 

 

INTERMODULATION

 

 

 

 

 

 

 

 

 

 

 

 

 

7th

 

± 50

 

 

 

 

 

 

 

 

 

 

 

 

f1 = 900 MHz

 

± 60

 

 

 

 

f2 = 900.1 MHz

 

 

 

 

 

VCC = 26 Vdc

 

 

 

 

 

 

 

IMD,

 

 

 

 

 

Icq = 300 mA

 

± 70

 

 

 

 

 

 

 

 

25

50

75

100

125

150

175

 

0

Pout, OUTPUT POWER, WATTS (PEP)

Figure 5. Intermodulation versus Output Power

 

11

Icq = 1200 mA

 

 

 

 

 

 

 

10

 

900 mA

 

(dB)

9

 

600 mA

 

 

 

 

GAIN

 

 

 

 

 

300 mA

 

,POWER

8

 

 

 

 

 

7

 

 

 

pe

 

 

 

 

 

 

 

G

 

 

 

f = 900 MHz

 

6

 

 

 

 

 

VCC = 26 V

 

 

 

 

 

5

 

 

Icq = 300 mA

 

1

10

100

 

0.1

 

 

Pout, OUTPUT POWER (WATTS)

 

10

 

 

 

 

 

 

50

(%)

 

 

 

 

 

 

 

 

 

 

 

 

9

 

GPE

 

 

 

 

45

EFFICIENCY

 

(dB)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GAIN

8

 

 

 

 

 

 

40

,

 

 

 

 

ηC

 

 

c

 

 

 

 

 

 

η

 

 

 

 

 

 

 

 

 

POWER

 

 

 

 

 

 

 

 

 

7

 

 

 

 

 

 

35

2.00

 

 

 

 

 

 

 

 

 

INPUT VSWR

,

 

 

 

 

 

 

 

 

 

pe

 

 

 

 

 

 

 

 

 

G

6

PO = 150 W (PEP)

 

 

 

 

30

1.50

 

 

 

 

 

 

 

VCC 26 V

 

 

I/P VSWR

 

 

5

lcq = 300 mA

 

 

 

 

25

1.00

 

 

 

840

850

860

870

880

890

900

 

 

 

 

 

 

 

 

 

f, FREQUENCY (MHz)

 

 

 

 

Figure 6. Power Gain versus Output Power

Figure 7. Broadband Test Fixture Performance

MOTOROLA RF DEVICE DATA

MRF899

 

3

 

f = 800 MHz

 

 

 

850

 

Zin

900

 

900

 

f = 960 MHz

850

 

960

ZOL*

800

 

 

Zo = 10 Ω

f

Zin

ZOL*

MHz

Ohms

Ohms

 

 

 

800

5.51 + j10.6

4.52 + j2.64

 

 

 

850

8.17 + j13.2

4.21 + j2.98

 

 

 

900

11.2 + j13.8

3.68 + j2.97

 

 

 

960

16.8 + j10.1

2.98 + j2.71

 

 

 

ZOL* = Conjugate of optimum load impedance into

ZOL* = which the device operates at a given output

ZOL* = power, voltage and frequency.

Figure 8. Input and Output Impedances

NOTE: Zin & ZOL* are given from

NOTE: base±to±base and

NOTE: collector±to±collector

NOTE: respectively

with Circuit Tuned for Maximum Gain @ PO = 150 W (PEP), VCC = 26 V

MRF899

MOTOROLA RF DEVICE DATA

4

 

 

 

 

 

C27

 

 

 

C26

 

 

C17

C12

C14

 

C5

C10

 

 

 

 

 

 

 

 

 

 

C7

 

L6

R4

 

 

 

 

 

BALUN 2

 

 

L4

R2

 

 

 

 

 

Q1

C20

 

 

 

 

C3

C22

COAX 1

 

 

B2

 

 

L7

L2

 

 

 

 

 

 

 

 

 

 

 

C1

 

 

C16

 

C24

 

C2

 

 

C9

C19

 

 

 

 

 

C25

L1

L3

 

 

 

 

L9

 

B1

C4

 

 

 

 

 

 

 

 

 

 

C23

 

 

 

 

 

C21

BALUN 1

 

 

R3

 

 

COAX 2

 

 

L5

 

R5

 

 

 

 

 

L8

 

 

 

 

 

 

 

 

 

C11

C6

C8

 

 

 

 

 

 

C18

C13 C15

Figure 9. MRF899 Test Fixture Component Layout

MOTOROLA RF DEVICE DATA

MRF899

 

5

 

 

PACKAGE DIMENSIONS

 

 

 

 

 

 

 

Q 2 PL

 

 

 

 

NOTES:

 

 

 

 

 

G

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

0.25 (0.010)

M

T

B

M

Y14.5M, 1982.

 

 

 

 

L

2. CONTROLLING DIMENSION: INCH.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

2

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

 

DIM

MIN

MAX

MIN

MAX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

1.330

1.350

33.79

34.29

K

R

±B±

 

 

 

 

B

0.375

0.395

9.52

10.03

 

 

 

 

C

0.180

0.205

4.57

5.21

 

 

5

 

 

 

 

D

0.320

0.340

8.13

8.64

 

 

 

 

 

 

E

0.060

0.070

1.52

1.77

 

 

 

 

 

 

 

 

3

4

 

 

 

 

F

0.004

0.006

0.11

0.15

 

 

 

 

 

 

 

G

1.100 BSC

27.94 BSC

 

D

 

 

 

 

 

H

0.082

0.097

2.08

2.46

 

 

 

 

 

 

K

0.580

0.620

14.73

15.75

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

0.435 BSC

11.05 BSC

 

 

 

 

 

 

 

N

0.845

0.875

21.46

22.23

E

N

F

 

 

 

 

Q

0.118

0.130

3.00

3.30

 

 

 

 

R

0.390

0.410

9.91

10.41

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

STYLE 1:

 

 

H

 

 

 

 

 

 

 

PIN 1. COLLECTOR

 

 

±T±

SEATING

 

 

 

2. COLLECTOR

 

 

 

 

 

 

 

 

 

 

 

 

3. BASE

 

 

 

A

 

PLANE

 

 

 

 

4. BASE

 

 

 

C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5. EMITTER

 

 

 

 

 

 

 

 

 

 

CASE 375A±01

ISSUE O

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

 

Mfax is a trademark of Motorola, Inc.

How to reach us:

 

USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4±32±1,

P.O. Box 5405, Denver, Colorado 80217. 303±675±2140 or 1±800±441±2447

Nishi±Gotanda, Shinagawa±ku, Tokyo 141, Japan. 81±3±5487±8488

Mfax : RMFAX0@email.sps.mot.com ± TOUCHTONE 602±244±6609

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

± US & Canada ONLY 1±800±774±1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

INTERNET: http://motorola.com/sps

MRF899

MRF899/D

 

MOTOROLA RF DEVICE DATA

6

 

 

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