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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF15090/D

Advance Information

The RF Line

NPN Silicon

RF Power Transistor

Designed for 26 volts microwave large±signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400±1600 MHz.

Specified 26 Volts, 1490 MHz, Class AB Characteristics Output Power Ð 90 Watts (PEP)

Gain Ð 7.5 dB Min @ 90 Watts (PEP)

Collector Efficiency Ð 30% Min @ 90 Watts (PEP) Intermodulation Distortion Ð ±28 dBc Max @ 90 Watts (PEP)

Third Order Intercept Point Ð 56.5 dBm Typ @ 1490 MHz, V CE = 24 Vdc, IC = 5 Adc

Characterized with Series Equivalent Large±Signal Parameters from 1400±1600 MHz

Characterized with Small±Signal S±Parameters from 1000±2000 MHz

Silicon Nitride Passivated

100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 Load VSWR @ 28 Vdc, and Rated Output Power

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

MRF15090

90 W, 1.5 GHz

RF POWER TRANSISTOR

NPN SILICON

CASE 375A±01, STYLE 1

Rating

Symbol

Value

Unit

 

 

 

 

Collector±Emitter Voltage

VCEO

25

Vdc

Collector±Emitter Voltage

VCES

60

Vdc

Emitter±Base Voltage

VEBO

4

Vdc

Collector±Current Ð Continuous @ T J(max) = 150°C

IC

15

Adc

Total Device Dissipation @ TC = 25°C

PD

250

Watts

Derate above 25°C

 

1.43

W/°C

 

 

 

 

Storage Temperature Range

Tstg

± 65 to +150

°C

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

RθJC

0.70

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

OFF CHARACTERISTICS

Collector±Emitter Breakdown Voltage

V(BR)CEO

25

28

Ð

Vdc

(IC = 50 mAdc, IB = 0)

 

 

 

 

 

Collector±Emitter Breakdown Voltage

V(BR)CES

60

65

Ð

Vdc

(IC = 50 mAdc, VBE = 0)

 

 

 

 

 

Collector±Emitter Breakdown Voltage

V(BR)CER

30

Ð

Ð

Vdc

(IC = 50 mAdc, RBE = 100 Ω)

 

 

 

 

 

 

 

 

 

 

(continued)

This document contains information on a new product. Specifications and information herein are subject to change without notice.

 

 

Motorola, Inc. 1994

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

 

Typ

Max

 

Unit

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS Ð continued

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter±Base Breakdown Voltage

V(BR)EBO

4

 

4.8

Ð

 

Vdc

(IE = 5 mAdc, IC = 0)

 

 

 

 

 

 

 

Collector Cutoff Current

ICES

Ð

 

Ð

10

 

mAdc

(VCE = 30 Vdc, VBE = 0)

 

 

 

 

 

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE

20

 

40

80

 

Ð

(ICE = 1 Adc, VCE = 5 Vdc)

 

 

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance

Cob

Ð

 

52

Ð

 

pF

(VCB = 26 Vdc, IE = 0, f = 1 MHz) ±

 

 

 

 

 

 

 

For Information Only. This Part Is Collector Matched.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FUNCTIONAL TESTS (Figure 12)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common±Emitter Amplifier Power Gain

Gpe

7.5

 

8.3

Ð

 

dB

(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,

 

 

 

 

 

 

 

f1 = 1490 MHz, f2 = 1490.1 MHz)

 

 

 

 

 

 

 

Collector Efficiency

η

30

 

36

Ð

 

%

(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,

 

 

 

 

 

 

 

f1 = 1490 MHz, f2 = 1490.1 MHz)

 

 

 

 

 

 

 

Intermodulation Distortion

IMD

Ð

 

± 32

± 28

 

dBc

(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,

 

 

 

 

 

 

 

f1 = 1490 MHz, f2 = 1490.1 MHz)

 

 

 

 

 

 

 

Input Return Loss

IRL

12

 

15

Ð

 

dB

(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,

 

 

 

 

 

 

 

f1 = 1490 MHz, f2 = 1490.1 MHz)

 

 

 

 

 

 

 

Load Mismatch

ψ

 

 

 

 

 

 

(VCC = 28 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,

 

 

No Degradation in Output Power

 

f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase

 

 

 

 

 

 

 

 

 

 

Angles at Frequency of Test)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MRF15090

MOTOROLA RF DEVICE DATA

2

 

 

 

 

 

 

TYPICAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

120

 

 

 

 

9.0

 

 

100

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin = 15 W

 

 

POWER (WATTS)

 

Gpe

 

 

P

 

POWER (WATTS)

80

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

out

 

 

 

 

 

 

 

 

 

 

 

 

80

 

 

 

 

8.5

GAIN (dB)

 

 

 

 

 

 

 

10 W

 

 

 

 

 

 

 

60

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

60

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

,

OUTPUT

40

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

pe

 

 

 

 

 

 

5 W

 

 

 

40

 

 

 

 

8.0

G

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = 26 Vdc

 

 

 

 

 

 

 

 

 

 

VCC = 26 Vdc

 

 

,

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

out

20

 

 

 

 

 

out 20

 

 

 

 

 

 

 

 

P

 

ICQ = 250 mA

 

 

 

 

P

 

 

 

 

 

 

 

ICQ = 250 mA

 

 

 

 

 

f = 1490 MHz Single Tone

 

 

 

 

 

 

 

 

 

 

 

Single Tone

 

 

 

0

4

8

12

16

7.5

 

 

0

 

 

 

 

 

1520

 

1560

 

 

 

0

20

 

 

1400

1420

1440

1460

1480

1500

1540

1580

1600

 

 

 

Pin, INPUT POWER (WATTS)

 

 

 

 

 

 

f, FREQUENCY (MHz)

 

 

 

 

 

 

 

Figure 1. Output Power & Power Gain

 

 

 

Figure 2. Output Power versus Frequency

 

 

 

 

 

versus Input Power

 

 

 

 

 

 

 

 

 

 

 

 

COLLECTOR,η EFFICIENCY(%)

(dBc)

± 20

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

9

 

Gpe

 

 

 

 

 

 

 

 

DISTORTION

 

 

 

 

 

3rd Order

 

(dB)GAIN

6

 

 

 

 

 

 

30

3.0

 

 

 

 

 

 

5th

 

 

 

 

 

 

 

 

 

 

± 30

 

 

 

 

 

 

 

8

 

 

 

 

 

 

 

40

 

 

 

 

 

 

 

 

 

 

7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

η

 

 

 

 

 

INTERMODULATION

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VSWRINPUT

 

 

 

f1

= 1490 MHz

7th

 

G

4

 

 

 

 

VSWR

 

20

 

 

± 40

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

2.5

 

 

 

 

 

 

 

 

 

pe

 

 

 

 

VCC = 26 Vdc

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

2.0

 

 

± 50

 

 

VCC = 26 Vdc

 

 

 

3

 

 

 

ICQ = 250 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICQ = 250 mA

 

 

 

2

 

 

 

 

 

 

 

10

1.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IMD,

 

 

 

f2 = 1490.1 MHz

 

 

 

1

 

 

 

 

 

 

 

 

 

 

± 60

 

 

 

 

 

0

 

 

 

 

 

 

 

0

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1420

 

1460

 

1500

 

 

 

 

0

20

40

60

80

100

120

 

1400

1440

1480

1520

1540

1560

 

 

 

 

 

Pout, OUTPUT POWER (WATTS) PEP

 

 

 

 

 

 

f, FREQUENCY (MHz)

 

 

 

 

 

Figure 3. Intermodulation Distortion

Figure 4. Performance in Broadband Circuit

versus Output Power

(dBc)

± 20

 

 

 

± 25

ICQ = 100 mA

 

 

DISTORTION

 

 

 

 

 

± 30

250 mA

 

 

 

 

 

± 35

 

 

 

 

 

 

 

INTERMODULATION

± 40

500 mA

 

 

 

 

 

± 45

 

 

VCC = 26 Vdc

± 50

 

 

 

 

f1 = 1490 MHz

± 55

750 mA

 

f2 = 1490.1 MHz

IMD,

 

 

± 60

 

 

 

 

1

10

100

 

0.1

 

 

Pout, OUTPUT POWER (WATTS) PEP

Figure 5. Intermodulation Distortion

versus Output Power

 

10

 

 

 

 

9

ICQ = 750 mA

 

 

 

 

 

 

(dB)

8

 

 

 

 

500 mA

 

 

GAIN

7

 

 

 

 

 

 

 

 

 

POWER

6

 

 

 

5

250 mA

 

 

,

 

 

 

pe

 

 

 

 

 

 

VCC = 26 Vdc

G

4

 

 

 

 

 

f1 = 1490 MHz

 

3

 

 

f2 = 1490.1 MHz

 

100 mA

 

 

 

 

 

 

 

2

1

10

100

 

0.1

Pout, OUTPUT POWER (WATTS) PEP

Figure 6. Power Gain versus Output Power

MOTOROLA RF DEVICE DATA

MRF15090

 

3

 

 

 

 

 

 

 

TYPICAL CHARACTERISTICS

 

 

 

 

60

 

 

 

 

 

 

 

 

9

 

 

 

 

 

50

 

 

 

 

 

 

 

 

8.5

 

 

 

 

(dBm)POWEROUTPUT,

40

 

 

 

 

 

VCC = 24 Vdc

(dB)GAINPOWER,

 

 

 

 

 

 

 

 

 

7

 

 

 

Gpe

 

 

 

 

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Fundamental

 

 

 

 

 

8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

3rd Order

 

 

 

7.5

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IMD

 

 

 

 

 

 

 

 

 

pe

 

 

 

 

out±10

 

 

 

 

 

IC = 5.0 Adc

 

 

ICQ = 250 mA

 

 

P

± 20

 

 

 

 

 

f1 = 1490 MHz

G

 

 

 

 

 

± 30

 

 

 

 

 

f2 = 1490.1 MHz

 

6.5

 

f1 = 1490 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

f2 = 1490.1 MHz

 

 

 

± 40

 

 

 

 

 

 

 

 

6

 

22

 

 

 

10

15

20

25

30

35

40

45

50

18

20

24

26

 

 

 

 

Pin, INPUT POWER (dBm)

 

 

 

 

VCC, COLLECTOR SUPPLY VOLTAGE (Vdc)

Figure 7. Class A Third Order Intercept Point

Figure 8. Power Gain and Intermodulation

Distortion versus Supply Voltage

±10

±15

±20

±25

±30

±35

±40

28

IMD, INTERMODULATION DISTORTION (dBc)

 

10

 

 

 

 

 

 

 

 

109

 

 

 

 

 

 

 

 

COLLECTOR CURRENT (Adc)

 

 

 

 

 

 

 

 

)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

8

 

MTBF Limited

 

 

 

 

 

(HOURS x AMPS

108

 

 

 

 

 

 

 

 

 

 

 

 

 

Tflange = 75°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Tflange = 100°C

 

 

 

7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

BreakdownLimited

 

FACTORMTBF

106

 

 

 

 

 

 

 

 

C

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 175°C

 

 

 

 

105

 

 

 

 

 

 

 

 

 

0

4

8

12

 

20

 

 

 

 

 

 

180

 

220

 

260

 

0

16

24

28

 

100

120

140

160

200

240

 

 

 

VCE, COLLECTOR VOLTAGE (Vdc)

 

 

 

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

 

Figure 9. DC Safe Operating Area

Figure 10. MTBF Factor versus

Junction Temperature

The graph above displays calculated MTBF in hours x ampere2 emitter current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTBF Factor by IC2 for MTBF in a particular application.

MRF15090

MOTOROLA RF DEVICE DATA

4

 

1.45 f = 1.4 GHz

1.5 1.55

Zin 1.6

 

1.6

1.55

ZOL*

1.5

1.45

f = 1.4 GHz

 

f

Zin

ZOL*

(MHz)

(Ω)

(Ω)

 

 

 

1400

3.28 + j9.07

4.62 + j2.23

 

 

 

 

1450

3.85

+ j10.4

4.35 + j3.41

 

 

 

 

1500

4.55

+ j11.4

4.08 + j3.60

 

 

 

 

1550

5.45

+ j11.9

3.80 + j3.78

 

 

 

 

1600

6.20

+ j12.2

3.55 + j3.84

 

 

 

 

Zo = 10 Ω

Zin = Input impedance is a balanced base to base measurement.

ZOL* = Conjugate of optimum load impedance collector to collector into which the device operates at a given output power, bias current, voltage and frequency.

Figure 11. Input and Output Impedances with Circuit Tuned for Maximum Gain @ Pout = 90 Watts (PEP), VCC = 26 Volts, ICQ = 250 mA, and Driven by Two Equal Amplitude Tones with Separation of 100 KHz

Table 1. Common Emitter S±Parameters (for One Side of Push±Pull MRF15090) at VCE = 24 Vdc, IC = 2.5 Adc

f

 

S11

 

S21

 

S12

 

S22

MHz

|S11|

 

φ

|S21|

 

φ

|S12|

 

φ

|S22|

 

φ

1000

0.999

 

172

0.164

 

108

0.006

 

72

0.957

 

173

1050

0.999

 

171

0.179

 

103

0.007

 

69

0.956

 

172

1100

0.994

 

170

0.196

 

97

0.007

 

66

0.948

 

172

1150

0.992

 

170

0.216

 

92

0.008

 

63

0.940

 

171

1200

0.994

 

169

0.241

 

86

0.008

 

62

0.935

 

171

1250

0.986

 

168

0.269

 

80

0.009

 

57

0.924

 

170

1300

0.982

 

167

0.306

 

73

0.010

 

51

0.915

 

170

1350

0.973

 

166

0.351

 

66

0.011

 

45

0.905

 

170

1400

0.957

 

164

0.408

 

56

0.012

 

33

0.888

 

170

1450

0.938

 

163

0.483

 

44

0.013

 

22

0.876

 

170

1500

0.903

 

162

0.571

 

29

0.014

 

7

0.859

 

171

1550

0.857

 

163

0.651

 

10

0.014

 

±13

0.855

 

173

1600

0.821

 

165

0.673

 

±14

0.013

 

± 40

0.877

 

174

1650

0.837

 

169

0.623

 

± 37

0.011

 

± 67

0.902

 

174

1700

0.872

 

170

0.529

 

± 56

0.009

 

±104

0.922

 

173

1750

0.901

 

170

0.437

 

±70

0.008

 

±138

0.931

 

172

1800

0.920

 

170

0.363

 

± 81

0.007

 

±165

0.932

 

171

1850

0.940

 

169

0.309

 

± 90

0.008

 

173

0.930

 

170

1900

0.954

 

169

0.265

 

± 98

0.008

 

150

0.932

 

169

1950

0.965

 

168

0.232

 

±104

0.009

 

139

0.930

 

169

2000

0.971

 

167

0.205

 

±110

0.010

 

132

0.929

 

168

 

 

 

 

 

 

 

 

 

 

 

 

 

MOTOROLA RF DEVICE DATA

MRF15090

 

5

 

 

 

 

 

 

R4

VCC

 

 

 

 

 

 

Vbias

 

 

 

Q3

 

 

 

 

 

 

+

Q1

R3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C9

 

 

 

 

 

 

 

 

 

 

 

D1

 

R6

 

 

 

 

 

 

 

 

 

D2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Q2

 

 

 

 

 

 

 

 

Vb

 

 

 

C16

C18

C20

 

 

 

 

 

 

 

 

 

+

R7

 

 

 

Coax 1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Balun 2

 

 

 

 

R1

C10

C13

 

 

 

 

 

 

C5

C7

 

R5

L6

 

 

 

 

B1

 

+

 

 

C22

 

 

 

 

 

 

 

 

B3

 

 

 

TL2

 

L4

 

 

 

 

L8

TL8

 

 

 

L2

 

 

 

 

 

C23

RF Output

 

 

 

 

 

 

 

TL6

 

RF Input

C3

 

TL4

 

 

 

 

 

TL10

N2

N1

TL1

 

 

 

 

 

 

 

 

 

 

C1

 

C4

 

 

 

C12

C15

 

C24

C26

L10

 

 

 

 

 

 

 

 

 

 

C2

 

 

 

 

 

 

TL7

 

 

 

L1

 

 

 

TL5

 

 

 

 

 

 

 

 

 

 

 

DUT

 

 

 

 

 

 

 

 

 

 

 

L9

TL9

 

 

 

 

 

L3

 

L5

 

 

 

 

 

 

TL3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

+

 

B4

 

 

 

 

 

 

B2

 

 

 

C25

 

 

 

 

C6

C8

R2

C11

C14

L7

 

 

 

 

Balun 1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

+

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vb

C17

C19 R8

 

Coax 2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC

 

 

 

 

B1, B2, B3, B4

Ferrite Bead, Ferroxcube

L1

1

Turn, 24 AWG, 0.042″

ID Choke

C1

2.7 pF, B Case Chip Capacitor, ATC

L2, L3, L8, L9

3

Turn, 20 AWG, 0.126″

ID Choke

C2

0.6±4.0 pF, Variable Capacitor, Johanson

L4, L5, L6, L7

12

Turns, 22 AWG, 0.140″ ID Choke

C3, C4, C23, C24

18 pF, B Case Chip Capacitor, ATC

L10

3

Turns, 24 AWG, 0.046″ ID Choke

C5, C6, C22, C25

51 pF, Chip Capacitor, Murata Erie

N1, N2

Type N Flange Mount RF Connector, Omni Spectra

C7, C8, C20, C21

1800 pF, Chip Capacitor, Kemit

Q1, Q3

Transistor, NPN, Motorola (MJD47)

C9, C10, C11

100 mF, Electrolytic Capacitor, Mallory

Q2

Transistor PNP Motorola (BD136)

C12

5.1 pF, A Case Chip Capacitor, ATC

R1, R2, R7, R8

10

W, 1/2 W, Resistor

 

C13, C14, C18, C19

0.1 mF, Chip Capacitor, Kemit

R3

150 W, 1/2 W, Resistor

 

C15

1.1 pF, B Case Chip Capacitor, ATC

R4

2 x 66 W, 1/8 W, Chip Resistors in Parallel, Rohm

C16, C17

470 mF, Electrolytic Capacitor, Mallory

R5

93

W, 1/8 W, Chip Resistor, Rohm

C26

0.3 pF, B Case Chip Capacitor, ATC

R6

22

KW, 1/8 W, Chip Resistor, Rohm

D1

Diode, Motorola (MUR5120T3)

TL1 to TL10

See Photomaster

 

D2

Light Emitting Diode, Industrial Devices

Board

Glass Teflon , Arlon GX±0300±55±22, er = 2.55

Figure 12. Class AB Test Fixture Electrical Schematic

MRF15090

MOTOROLA RF DEVICE DATA

6

 

Vsupply

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R1

 

 

 

+

 

 

 

 

 

 

 

 

 

 

 

Q1

R9

C1

 

 

 

 

 

VCC

 

 

 

 

R2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Q3

 

 

 

 

 

 

 

 

 

 

 

 

R10

 

 

R17

 

 

 

 

R19

 

 

 

 

 

R15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R3

R7

R11

+

 

B1

C11

+

 

 

B5

 

 

 

C3

C5

 

C17

C19

 

 

 

 

 

 

C15

 

 

 

 

 

 

Coax 1

 

B3

 

 

 

 

B7

Balun 2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C9

 

 

 

 

C20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TL2

L2

 

 

 

 

L4

TL8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TL6

 

C21

RF Output

RF Input

 

 

 

 

 

C7

TL4

 

 

 

 

TL10

N2

N1

TL1

 

 

 

 

 

 

C14

 

 

 

 

 

 

 

 

 

 

 

 

C13

 

 

C25

L6

 

L1

 

 

 

 

 

C8

TL5

 

 

TL7

 

C22

 

 

 

 

 

 

 

 

 

 

DUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L5

TL9

 

 

 

 

 

 

 

 

L3

 

 

 

 

 

 

 

 

 

 

 

TL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

C10

 

 

 

 

C23

 

 

 

 

 

Balun 1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B4

 

 

 

B8

Coax 2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R4

R8

 

R1

C4

C6

B2

C12

C16

+

C18

B6

C24

 

 

 

2

+

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R13

R16

 

R18

 

 

 

 

R20

 

 

 

 

 

 

 

Q4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R5

 

Q2

 

 

 

 

 

 

 

VCC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R6

R14

+C2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vsupply

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B1, B2, B5, B6

 

Long Bead, Fair Rite

 

N1, N2

 

Type N Flange Mount RF Connector, Omni Spectra

B3, B4, B7, B8

 

Short Bead, Fair Rite

 

Q1, Q2

 

Transistor NPN Motorola (BD135)

 

 

C1, C2, C3, C4

 

100 mF, Electrolytic Capacitor, Mallory

Q3, Q4

 

Transistor PNP Motorola (BD136)

 

 

C5, C6, C17, C18 0.1 mF, Chip Capacitor, Kemit

R1, R6

 

250 W, 1/8 W, Chip Resistor, Rohm

 

 

C7, C8, C21, C22 18 pF, B Case Chip Capacitor, ATC

R2, R5

 

500 W, 1/4 W, Potentiometer, State of the Art

 

C9, C10, C20, C23 51 pF, Chip Capacitor, Murata Erie

R3, R4

 

4.7 W, 1/8 W, Chip Resistor, Rohm

 

 

C11, C12, C19, C24 1800 pF, Chip Capacitor, Kemit

R7, R8

 

2 x 4.7 KW, 1/8 W, Chip Resistors

 

 

C13

 

 

4.3 pF, B Case Chip Capacitor, ATC

 

 

in Parallel, Rohm

 

 

C14

 

 

2.0 pF, B Case Chip Capacitor, ATC

R9, R14

 

1.0 W, 10 W, Resistor, Dale

 

 

C15, C16

 

 

470 mF, Electrolytic Capacitor, Mallory

R10, R13

 

38 W, 1 W, Resistor

 

 

C25

 

 

0.6±4 pF Variable Capacitor, Johanson

R11, R12

 

75 W, 1/8 W, Chip Resistor, Rohm

 

 

L1

 

 

3 Turns, 24 AWG, 0.046″ ID Choke

R15, R16

 

2 x 10 W, 1/8 W, Chip Resistors in Parallel, Rohm

L2, L3, L4, L5

 

3 Turns, 20 AWG, 0.126″ ID Choke

R17, R18, R19, R20 4 x 38 W, 1/8 W, Chip Resistors in Parallel, Rohm

L6

 

 

2 Turns, 24 AWG, 0.042″ ID Choke

Board

 

Glass Teflon , Arlon GX±0300±55±22, er = 2.55

 

Figure 13. Class A Test Fixture Electrical Schematic

MOTOROLA RF DEVICE DATA

MRF15090

 

7

PACKAGE DIMENSIONS

 

G

Q 2 PL

 

 

 

 

 

 

 

 

 

 

0.25 (0.010) M

T

B

M

 

 

 

 

 

 

 

 

 

 

 

 

 

L

 

 

 

 

NOTES:

 

 

 

 

 

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

1

2

 

 

 

 

Y14.5M, 1982.

 

 

 

 

 

 

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

 

 

 

 

 

 

 

K

R

±B±

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

DIM

MIN

MAX

MIN

MAX

 

 

5

 

 

 

 

A

1.330

1.350

33.79

34.29

 

 

 

 

 

 

B

0.375

0.395

9.52

10.03

 

3

4

 

 

 

 

 

 

 

 

 

C

0.180

0.205

4.57

5.21

 

D

 

 

 

 

 

D

0.320

0.340

8.13

8.64

 

 

 

 

 

 

E

0.060

0.070

1.52

1.77

 

 

 

 

 

 

 

F

0.004

0.006

0.11

0.15

 

 

 

 

 

 

 

G

1.100 BSC

27.94 BSC

E

N

 

 

 

 

STYLE 1:

H

0.082

0.097

2.08

2.46

F

 

 

 

K

0.580

0.620

14.73

15.75

 

 

 

PIN 1. COLLECTOR

 

 

 

L

0.435 BSC

11.05 BSC

 

 

 

 

 

 

2. COLLECTOR

 

 

 

 

 

 

N

0.845

0.875

21.46

22.23

 

 

 

 

 

 

3. BASE

 

 

 

 

 

 

Q

0.118

0.130

3.00

3.30

H

 

 

 

 

 

4. BASE

 

 

 

 

 

R

0.390

0.410

9.91

10.41

 

±T±

SEATING

5. EMITTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

 

PLANE

 

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CASE 375A±01

ISSUE O

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MRF15090/D

 

*MRF15090/D*

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