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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF20060/D

The RF Sub±Micron Bipolar Line

RF Power Bipolar Transistors

The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large±signal, common emitter class A and class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multi±carrier base station RF power amplifiers.

•Guaranteed Two±tone Performance at 2000 MHz, 26 Volts Output Power Ð 60 Watts (PEP)

Power Gain Ð 9 dB Efficiency Ð 33%

Intermodulation Distortion Ð ±30 dBc

•Characterized with Series Equivalent Large±Signal Impedance Parameters

•S±Parameter Characterization at High Bias Levels

•Excellent Thermal Stability

•Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP) Output Power

•Designed for FM, TDMA, CDMA and Multi±Carrier Applications

MRF20060

MRF20060S

60 W, 2000 MHz

RF POWER

BROADBAND NPN BIPOLAR

CASE 451±04, STYLE 1 (MRF20060)

CASE 451A±01, STYLE 1 (MRF20060S)

MAXIMUM RATINGS

Rating	Symbol	Value	Unit

Collector±Emitter Voltage (IB = 0 mA)	VCEO	25	Vdc
Collector±Emitter Voltage	VCES	60	Vdc
Collector±Base Voltage	VCBO	60	Vdc
Collector±Emitter Voltage (RBE = 100 Ohm)	VCER	30	Vdc
Base±Emitter Voltage	VEB	± 3	Vdc
Collector Current ± Continuous	IC	8	Adc
Total Device Dissipation @ TC = 25°C	PD	250	Watts
Derate above 25°C		1.43	W/°C

Storage Temperature Range	Tstg	± 65 to +150	°C
Operating Junction Temperature	TJ	200	°C
THERMAL CHARACTERISTICS

Rating	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	0.7	°C/W

MOTOROLAMotorola, Inc. 1997RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Breakdown Voltage	V(BR)CEO	25	26	Ð	Vdc
(IC = 50 mAdc, IB = 0)
Collector±Emitter Breakdown Voltage	V(BR)CES	60	69	Ð	Vdc
(IC = 50 mAdc, VBE = 0)
Collector±Base Breakdown Voltage	V(BR)CBO	60	69	Ð	Vdc
(IC = 50 mAdc, IE = 0)
Reverse Base±Emitter Breakdown Voltage	V(BR)EBO	3	3.5	Ð	Vdc
(IB = 10 mAdc, IC = 0)
Zero Base Voltage Collector Leakage Current	ICES	Ð	Ð	10	mAdc
(VCE = 30 Vdc, VBE = 0)

ON CHARACTERISTICS

DC Current Gain	hFE	20	40	80	Ð
(VCE = 5 Vdc, IC = 1 Adc)

DYNAMIC CHARACTERISTICS

Output Capacitance		= 0, f = 1.0 MHz) (1)	Cob	Ð		55	Ð	pF
(V = 26 Vdc, I	E	= 0, f = 1.0 MHz) (1)
CB	E
FUNCTIONAL TESTS (In Motorola Test Fixture)

Common±Emitter Amplifier Power Gain			Gpe	9		9.4	Ð	dB
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Collector Efficiency			η	33		35	Ð	%
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intermodulation Distortion			IMD	Ð		± 33	± 30	dB
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss			IRL	12		19	Ð	dB
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Output Mismatch Stress
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,			ψ		No Degradation in Output Power
f1 = 2000.0 MHz, f2 = 2000.1 MHz, VSWR = 3:1, All Phase					No Degradation in Output Power
f1 = 2000.0 MHz, f2 = 2000.1 MHz, VSWR = 3:1, All Phase
Angles at Frequency of Test)

(1) For Information Only. This Part Is Collector Matched.

MRF20060 MRF20060S	MOTOROLA RF DEVICE DATA
2

VBB
R1								L5
		Q2						L5
		Q2
D1				L1		L3		B1
D1										VCC
						C7	C9			VCC
Q1		+				C6		C12		+
		C1	C3			C6		C12	C14	C15
		C1	C3			C8	C10	R4	C14	C15
						C8	C10
			R2	R3
								L4
					L2
						Z6	Z7	Z9	Z10	RF
		Z1	Z2	Z3	Z4	Z5				RF
	RF	Z1	Z2	Z3	Z4	Z5				OUTPUT
	RF							C11		OUTPUT
	INPUT							C11	C13
	INPUT				C5	DUT			C13
		C2	C4		C5	DUT
		C2	C4

B1	Ferrite Bead, P/N 5659065/3B, Ferroxcube	D1	Diode, Motorola (MUR3160T3)
C1	100 mF, 50 V, Electrolytic Capacitor, Mallory	L1, L5	12 Turns, 22 AWG, 0.140″ Choke
C2, C4, C13	0.6±4.0 pF, Variable Capacitor, Gigatrim, Johanson	L2, L4	.5 inch of 20 AWG, ID Choke
C3, C14	0.1 mF, Chip Capacitor, Kemit	L3	12.5 nH Inductor
C5	15 pF, B Case Chip Capacitor, ATC	R1	2 x 130 W, 1/8 W Chip Resistor, Rohm
C6, C12	1000 pF, B Case Chip Capacitor, ATC	R2	2 x 100 W, 1/8 W Chip Resistor, Rohm
C7, C9	91 pF, B Case Chip Capacitor, ATC	R3, R4	10 W, 1/2 W, Resistor
C8, C10	24 pF, B Case Chip Capacitor, ATC	Q1	Transistor, PNP Motorola (BD136)
C11	13 pF, B Case Chip Capacitor, ATC	Q2	Transistor, NPN Motorola (MJD47)
C15	470 mF, 50 V, Electrolytic Capacitor, Mallory	Board	Glass Teflon , Arlon GX±0300±55±22, er = 2.55

Figure 1. Class AB, 1.93 ± 2 GHz Test Fixture Electrical Schematic

MOTOROLA RF DEVICE DATA	MRF20060 MRF20060S
	3

			Vsupply
				+	C3
	R1				C3
			R5
R2
		Q1
	R3					VCC					V
											CC
				Q2
	R4			R6	R9
							C6	+		L3
				R7				C8		L3
				R7				C8
					B1	R8					+
											+
								C10	C11	C13	C14
										R10
						L1		L2
						L1					N2
	N1					C5	C7		C12		N2
	N1	C1	C2			C4					RF
		C1	C2			C4					OUTPUT
								Z5	Z6	Z7	OUTPUT
RF								Z5	Z6	Z7
RF		Z1	Z2	Z3		Z4		DUT
INPUT		Z1	Z2	Z3		Z4


								C9

B1	Short Bead, Fair Rite	N1, N2	Type N Flange Mount RF 55±22,
C1, C2	0.6±4.5 pF, Trimmer, Gigatrim, Johanson		Connector, Omni Spectra
C3, C8	100 mF, 50 V Electrolytic, Mallory	Q1	Transistor, NPN, Motorola (BD135)
C4, C12	12 pF, Chip Capacitor, ATC	Q2	Transistor, PNP, Motorola (BD136)
C5, C11	91 pF, Chip Capacitor, ATC	R1	270 W, Chip Resistor, 1/8 Watt, Rohm
C6	0.01 mF, Chip Capacitor, ATC	R2	10 KW, 1/4 Watt, Potentiometer
C7, C10	24 pF, Chip Capacitor, ATC	R3	4.7 KW, Chip Resistor, 1/8 Watt, Rohm
C9	0.4±2.5 pF, Trimmer, Gigatrim, Johanson	R4	2 x 4.7 KW, Chip Resistor, 1/8 Watt, Rohm
C13	0.1 mF, Chip Capacitor, ATC	R5	1.0 W, 25 Watt, 1% Resistor, DALE
C14	470 mF, 63 V Electrolytic, Mallory	R6	38 W, Axial Lead, 1 Watt Resistor
L1	2 Turn, 27 AWG, 0.049″ ID Coil	R7	4.2 KW, Chip Resistor, 1/8 Watt, Rohm
L2	0.041″ dia., 0.7″ Length Wire	R8	3 x 39 W, Chip Resistors, 1/8 Watt, Rohm
L3	11 Turn, 20 AWG, 0.19″ ID Coil	R9	2 x 10 W, Chip Resistor, 1/8 Watt, Rohm
		R10	10 W, Axial Lead, 1 Watt Resistor
		Board	Glass Teflon , Arlon GX±0300±55±22,
			er = 2.55

Figure 2. Class A, 1.93 ± 2 GHz Test Fixture Electrical Schematic

MRF20060 MRF20060S	MOTOROLA RF DEVICE DATA
4

TYPICAL CHARACTERISTICS

	70
	70
(WATTS)	60
(WATTS)	50				Pout
					Pout
POWER
POWER	40						Gpe
	40
OUTPUT,	20
OUTPUT,	20
	30
out				V	CC	= 26	Vdc
P					CC
	10			ICQ = 200			mA
	0			f = 2000 MHz Single Tone

		2				6		8
	0	2	4			6		8

Pin, INPUT POWER (WATTS)

Figure 3. Output Power & Power Gain

versus Input Power

11.570

				Pin = 7 W
11	(dB)GAIN	(WATTS)POWER	60
11			60	3 W
				3 W
10.5			50	5 W
10.5			50
10	G	OUTPUT,	40
10			40
9			20
9.5	,		30
	pe
		out
8.5		out	10				VCC = 26 Vdc
8.5		P	10				VCC = 26 Vdc
		P
							ICQ = 200 mA
8			0
8			0
10			1800		1850	1900	1950	2000

f, FREQUENCY (MHz)

Figure 4. Output Power versus Frequency

(dBc)

± 20

3rd

Order

DISTORTION

± 40

± 30

INTERMODULATION

5th

Order

7th

Order

± 50

VCC = 26 Vdc

± 60

ICQ = 200 mA

IMD,

f1 = 2000.0 MHz

± 70

= 2000.1 MHz

Pout, OUTPUT POWER (WATTS) PEP

Figure 5. Intermodulation Distortion

versus Output Power

(dBc)

± 20

ICQ

= 100

DISTORTION

± 25

± 30

INTERMODULATION

200 mA

± 45

f1 =

2000.0

MHz

± 35

± 40

400 mA

VCC

= 26

Vdc

IMD,

± 50

600 mA

f2 =

2000.1

MHz

0.1

1.0

100

Pout, OUTPUT POWER (WATTS) PEP

Figure 7. Intermodulation Distortion

versus Output Power

10.5

±10

(dBc)

(dB)

±15

DISTORTION

9.5

Gpe

±20

INTERMODULATION

ICQ

= 200 mA

±35

GAIN

±25

8.5

±30

Pout

= 60 W (PEP)

IMD

IMD,

f1 =

2000.0 MHz

7.5

f2 =

2000.1 MHz

±40

VCC, COLLECTOR SUPPLY VOLTAGE (Vdc)

Figure 6. Power Gain and Intermodulation

Distortion versus Supply Voltage

ICQ

600

(dB)

400

GAIN

POWER,

200 mA

VCC

Vdc

100 mA

f1 =

2000.0

MHz

f2 =

2000.1

MHz

0.1

1.0

100

Pout, OUTPUT POWER (WATTS) PEP

Figure 8. Power Gain versus Output Power

MOTOROLA RF DEVICE DATA	MRF20060 MRF20060S
	5

	8									10	P	= 60 W (PEP)				38	(%)
(Adc)CURRENTCOLLECTOR	2						LIMITED		G	8.5	out					32	EFFICIENCYCOLLECTOR
	7										VCC = 26 Vdc			Gpe
	6		MTBF LIMITED				°			9.5	ICQ = 200 mA			Gpe		36
					Tflange = 100 C		Tflange = 75 C		(dB)	9.5						36
	5				Tflange = 100 C				(dB)
	5				°				GAIN,
	4								GAIN,	9		η				34
	4									9						34
	3								pe
									pe
							BREAKDOWN										VSWRINPUT
I							BREAKDOWN							VSWR			VSWRINPUT
,		TJ = 175°C
C	1	TJ = 175°C
C

	0									8						28
	0	4	8	12	16	20	24	28		1900		1920	1940	1960	1980	2000
			VCE, COLLECTOR SUPPLY VOLTAGE (Vdc)										f, FREQUENCY MHz)

Figure 9. Class A DC Safe Operating Area

Figure 10. Performance in Broadband Circuit

1.3:1

1.2:1

1.1:1

(dBm)

POWER

FUNDAMENTAL

, OUTPUT

3rd Order

CC = 24

Vdc

out

= 3.5

Adc

± 20

f1 = 2000.0

MHz

f2 = 2000.1 MHz

± 40

Pin, INPUT POWER (dBm)

Figure 11. Class A Third Order Intercept Point

2 MTBF FACTOR (HOURS x AMPS )

1.E+11

1.E+10

1.E+09

1.E+08

1.E+07

1.E+06

1.E+05

100

150

200

250

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTBF in hours x ampere2 emitter curent. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide

MTBF factor by IC2 for MTBF in a particular application.

Figure 12. MTBF Factor versus Junction Temperature

MRF20060 MRF20060S	MOTOROLA RF DEVICE DATA
6

			+ j1
	+ j0.5		+ j2
		f = 1.8 GHz
	Zin	1.85 GHz
			+ j3
	f = 1.8 GHz	1.9 GHz
	f = 1.8 GHz		1.95 GHz
			1.95 GHz
+ j0.2	ZOL*	2 GHz	2 GHz
			+ j5

1.95GHz

1.85GHz

1.9GHz

						+ j10
			Zo = 10 Ω
0.0	0.2	0.5	1	2	3	5
0.0			1	2	3	5

		± j10
± j0.2		± j5
± j0.2
		± j3
	± j0.5	± j2
	± j0.5
		± j1

VCC = 26 V, ICQ = 200 mA, Pout = 60 W (PEP)

f	Zin(1)	ZOL*
MHz	Ω	Ω

1800	1.0 + j4.8	1.7 + j3.3

1850	1.5 + j4.8	2.2 + j2.7

1900	2.0 + j4.7	2.4 + j3.0

1950	2.5 + j4.7	2.3 + j3.2

2000	3.5 + j4.7	2.0 + j3.4

Zin(1)= Conjugate of fixture base terminal impedance.

ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency.

Figure 13. Series Equivalent Input and Output Impedence

MOTOROLA RF DEVICE DATA	MRF20060 MRF20060S
	7

Table 1. Common Emitter S±Parameters at VCE = 24 Vdc, IC = 3.5 Adc

f		S11		S21		S12			S22
GHz	\|S11\|		f	\|S21\|	f	\|S12\|	f	\|S22\|		f
	\|S11\|		f	\|S21\|	f	\|S12\|	f	\|S22\|		f
1.5	0.986		168	0.32	81	0.031	60	0.923		169

1.55	0.985		167	0.35	76	0.031	63	0.918		169

1.6	0.981		167	0.40	70	0.032	61	0.908		169

1.65	0.973		166	0.45	63	0.030	53	0.897		169

1.7	0.968		165	0.52	56	0.033	50	0.889		168

1.75	0.951		163	0.62	46	0.028	47	0.880		169

1.8	0.914		161	0.76	32	0.027	39	0.871		170

1.85	0.851		161	0.91	12	0.024	26	0.863		171

1.9	0.789		164	1.02	±15	0.015	5	0.888		174

1.95	0.810		170	0.94	±44	0.005	±7	0.931		174

2	0.880		172	0.75	±68	0.006	±151	0.953		172

2.05	0.934		170	0.57	±85	0.010	152	0.967		170

2.1	0.964		168	0.45	±98	0.015	158	0.965		169

2.15	0.977		165	0.36	±109	0.022	164	0.955		168

2.2	0.975		163	0.30	±118	0.033	165	0.950		167

2.25	0.961		161	0.25	±128	0.049	160	0.947		167

2.3	0.942		160	0.22	±139	0.066	149	0.938		166

2.35	0.919		157	0.19	±149	0.077	142	0.931		165

2.4	0.860		156	0.17	±163	0.100	137	0.922		165

2.45	0.821		159	0.15	177	0.128	122	0.914		165

2.5	0.781		161	0.14	157.0	0.156	108	0.907		165

MRF20060 MRF20060S	MOTOROLA RF DEVICE DATA
8

				PACKAGE DIMENSIONS
		G								NOTES:
										1. DIMENSIONING AND TOLERANCING PER ANSI
			1								Y14.5M, 1982.
			1							2.	CONTROLLING DIMENSION: INCH.
										2.	CONTROLLING DIMENSION: INCH.
	R		±B±									INCHES		MILLIMETERS
	R		±B±								DIM	MIN	MAX	MIN	MAX
			3								DIM	MIN	MAX	MIN	MAX
			3								A	0.995	1.005	25.27	25.53
			2								B	0.380	0.390	9.65	9.91
			Q 2 PL								C	0.170	0.205	4.32	5.21
	K	D		0.25 (0.010) M		T	A		B M		D	0.455	0.465	11.56	11.81
	K	D						M			E	0.060	0.075	1.52	1.91
								M			E	0.060	0.075	1.52	1.91
											F	0.004	0.006	0.10	0.15
											G	0.800 BSC		20.32 BSC
											H	0.078	0.090	1.98	2.29
											K	0.117	0.137	2.97	3.48
		N									N	0.595	0.605	15.11	15.37
		N	F								Q	0.120	0.130	3.05	3.30
H	E		F								R	0.395	0.410	10.03	10.41
											R	0.395	0.410	10.03	10.41
			C
			C	±T±	PLANESEATING						STYLE 1:
											PIN 1. COLLECTOR
		±A±										2. BASE
		±A±										3. EMITTER

CASE 451±04

ISSUE D

	1
K	2

H E

±A±

	NOTES:
	1.	DIMENSIONING AND TOLERANCING PER ANSI
		Y14.5M, 1982.
±B±	2.	CONTROLLING DIMENSION: INCH.

F
C	±T±	SEATING
		PLANE

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.615	0.625	15.62	15.88
B	0.395	0.410	10.03	10.41
C	0.170	0.205	4.32	5.21
D	0.455	0.465	11.56	11.81
E	0.060	0.075	1.52	1.91
F	0.004	0.006	0.10	0.15
H	0.078	0.090	1.98	2.29
K	0.117	0.137	2.97	3.48
N	0.595	0.605	15.11	15.37

3	STYLE 1:
	PIN 1.	COLLECTOR
	2.	BASE
	3.	EMITTER

CASE 451A±01

ISSUE O

MOTOROLA RF DEVICE DATA	MRF20060 MRF20060S
	9

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

	Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4±32±1,
P.O. Box 5405, Denver, Colorado 80217. 303±675±2140 or 1±800±441±2447	Nishi±Gotanda, Shinagawa±ku, Tokyo 141, Japan. 81±3±5487±8488
Mfax : RMFAX0@email.sps.mot.com ± TOUCHTONE 602±244±6609	ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

± US & Canada ONLY 1±800±774±1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

INTERNET: http://motorola.com/sps

MRF20060 MRF20060S	◊	MOTOROLA RF DEVICEMRF20060/DDATA
10

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