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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF150/D

The RF MOSFET Line
RF Power Field-Effect Transistor
N±Channel Enhancement±Mode		MRF150
Designed primarily for linear large±signal output stages up to 150 MHz
frequency range.
• Specified 50 Volts, 30 MHz Characteristics
• Specified 50 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Output Power = 150 Watts
Power Gain = 17 dB (Typ)		150 W, to 150 MHz
Efficiency = 45% (Typ)		N±CHANNEL MOS
• Superior High Order IMD		LINEAR RF POWER
• Superior High Order IMD		FET
• IMD(d3) (150 W PEP) Ð ±32 dB (Typ)		FET
• IMD(d3) (150 W PEP) Ð ±32 dB (Typ)
• IMD(d11) (150 W PEP) Ð ±60 dB (Typ)
• 100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
D

MAXIMUM RATINGS

CASE 211±11, STYLE 2

Rating

Symbol

Value

Unit

Drain±Source Voltage

VDSS

125

Vdc

Drain±Gate Voltage

VDGO

125

Vdc

Gate±Source Voltage

VGS

± 40

Vdc

Drain Current Ð Continuous

Adc

Total Device Dissipation @ TC = 25°C

300

Watts

Derate above 25°C

1.71

W/°C

Storage Temperature Range

Tstg

± 65 to +150

°C

Operating Junction Temperature

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RθJC

0.6

°C/W

Handling and Packaging Ð MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

REV 8

MOTOROLAMotorola, Inc. 1997RF DEVICE DATA	MRF150
	1

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Drain±Source Breakdown Voltage (VGS = 0, ID = 100 mA)

V(BR)DSS

125

Vdc

Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)

IDSS

5.0

mAdc

Gate±Body Leakage Current (VGS = 20 V, VDS = 0)

IGSS

1.0

μAdc

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)

VGS(th)

1.0

3.0

5.0

Vdc

Drain±Source On±Voltage (VGS = 10 V, ID = 10 A)

VDS(on)

1.0

3.0

5.0

Vdc

Forward Transconductance (VDS = 10 V, ID = 5.0 A)

gfs

4.0

7.0

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)

Ciss

400

Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)

Coss

240

Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)

Crss

FUNCTIONAL TESTS (SSB)

Common Source Amplifier Power Gain

f = 30 MHz

Gps

(VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA)

f = 150 MHz

8.0

Drain Efficiency

(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,

ID (Max) = 3.75 A)

Intermodulation Distortion (1)

(VDD = 50 V, Pout = 150 W (PEP),

IMD(d3)

± 32

f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA)

IMD(d11)

± 60

Load Mismatch

(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,

No Degradation in Output Power

IDQ = 250 mA, VSWR 30:1 at all Phase Angles)

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

GPS

(VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz,

IMD(d3)

± 50

f2 = 30.001 MHz, IDQ = 3.0 A)

IMD(d9 ± 13)

± 75

NOTE:

1. To MIL±STD±1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

BIAS

0 ± 12 V

+ C10

± 50 V

DUT

OUTPUT

INPUT

C10 Ð 10 μF/100 V Electrolytic

C1 Ð 470 pF Dipped Mica

C2, C5, C6, C7, C8, C9 Ð 0.1

μF Ceramic Chip or

L1 Ð VK200/4B Ferrite Choke or Equivalent, 3.0

μH

Monolythic with Short Leads

L2 Ð Ferrite Bead(s), 2.0

μH

C3 Ð 200 pF Unencapsulated Mica or Dipped Mica

R1, R2 Ð 51 Ω/1.0 W Carbon

with Short Leads

R3 Ð 3.3 Ω/1.0 W Carbon (or 2.0 x 6.8 Ω/1/2 W in Parallel

C4 Ð 15 pF Unencapsulated Mica or Dipped Mica

T1 Ð 9:1 Broadband Transformer

with Short Leads

T2 Ð 1:9 Broadband Transformer

Figure 1. 30 MHz Test Circuit (Class AB)

MRF150

MOTOROLA RF DEVICE DATA

	25							250
								200							MHz
(dB)GAIN	20						(WATTS)POWER	150		VDD = 50 V					MHz
								100							150
								50			40 V			IDQ = 250 mA	150
	15							50			40 V			IDQ = 250 mA
	15			VDD = 50 V				0	0		10		20		30
				VDD = 50 V				0	0		10		20		30
POWER				IDQ = 250 mA			OUTPUT
POWER	10			Pout = 150 W (PEP)			OUTPUT	250
	10			Pout = 150 W (PEP)				250
							P	200							MHz30
							P	100							MHz30
							,	150
	5						out	150			VDD = 50 V
							out				VDD = 50 V

								50			40			IDQ = 250 mA
								50			V
	0							0			V
	0	5	10	20	50	100	200	0	0	1	2	3	4	5	6
	2	5	10	20	50	100	200		0	1	2	3	4	5	6

f, FREQUENCY (MHz)	Pin, INPUT POWER (WATTS)
Figure 2. Power Gain versus Frequency	Figure 3. Output Power versus Input Power

DISTORTION (dB)	± 30									1000
	± 35		150 MHz			d3			FREQUENCY (MHz)
	± 40					d3				800
	± 40									800
	± 45					d5
	± 50					d5				600
	± 50									600
		VDD = 50 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz
INTERMODULATION		VDD = 50 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz							GAIN
	± 30								GAIN	400
	± 35		30 MHz						, UNITY
	± 40								, UNITY	200
						d3			T
IMD,	± 45					d3			f
	± 45					d5
	± 50									0
	± 50									0
	0	20	40	60	80	100	120	140	160
			Pout, OUTPUT POWER (WATTS PEP)

			VDS = 30 V
			15 V
0	5	10	15	20
		ID, DRAIN CURRENT (AMPS)

Figure 4. IMD versus Pout	Figure 5. Common Source Unity Gain Frequency
	versus Drain Current

IDS, DRAIN CURRENT (AMPS)

2				VDS = 10 V
				gfs = 5 mhos
0	2	4	6	8	10
0	2	4	6	8	10

VGS, GATE±SOURCE VOLTAGE (VOLTS)

Figure 6. Gate Voltage versus

Drain Current

MOTOROLA RF DEVICE DATA	MRF150
	3

150	f = 175 MHz

90 136

Zin

15		90
	30	90
	30	f = 175 MHz
	15
7.5	7.5	Zo = 10 W
	4.0	Zo = 10 W
	4.0	ZOL*
	2.0	VDD = 50 V
		VDD = 50 V

IDQ = 250 mA

4.0 Pout = 150 W PEP

ZOL* = Conjugate of the optimum load impedance

2.0ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency.

NOTE: Gate Shunted by 25 Ohms.

Figure 7. Series Equivalent Impedance

BIAS	R1
BIAS
0 ± 12 V		C4		+ C5
	C1			R3
	C1			L1
RF INPUT
	C2		C3	R2
	C2		C3

	RFC2
		+ 50 Vdc
C10		+ C11
L4
DUT		C9
		C9
L3	L2	RF OUTPUT
L3	L2
C6	C7	C8

C1, C2, C8 Ð Arco 463 or equivalent			L1	Ð 3/4 ″ , 18 AWG into Hairpin
C3	Ð 25 pF, Unelco		L2	Ð Printed Line, 0.200 ″ x 0.500″
C4	Ð 0.1	mF, Ceramic	L3	Ð 1 ″ , #16 AWG into Hairpin
C5	Ð 1.0	mF, 15 WV Tantalum	L4	Ð 2 Turns #16 AWG, 5/16 ID
C6	Ð 25 pF, Unelco J101		RFC1 Ð 5.6 mH, Choke
C7	Ð 25 pF, Unelco J101		RFC2 Ð VK200±4B
C9	Ð Arco 262 or equivalent		R1 Ð 150 W, 1.0 W Carbon
C10 Ð 0.05 mF, Ceramic			R2 Ð 10 k W, 1/2 W Carbon
C11 Ð 15 mF, 60 WV Electrolytic			R3 Ð 120 W, 1/2 W Carbon

Figure 8. 150 MHz Test Circuit (Class AB)

MRF150	MOTOROLA RF DEVICE DATA
4

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate±to±drain (Cgd), and gate±to±source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain±to±source (Cds).

These capacitances are characterized as input (Ciss), output(Coss)and reversetransfer (Crss)capacitancesondata sheets. The relationships between the inter±terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways:

1.Drain shorted to source and positive voltage at the gate.

2.Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications.

DRAIN
Cgd
GATE	Ciss = Cgd + Cgs
Cds	C	= C	gd	+ C	ds
	oss		gd		ds
	Crss = Cgd
Cgs
SOURCE

LINEARITY AND GAIN CHARACTERISTICS

In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors.

Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent.

DRAIN CHARACTERISTICS

One figure of merit for a FET is its static resistance in the full±on condition. This on±resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate±source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device.

GATE CHARACTERISTICS

The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high Ð on the order of 10 9 ohms Ð resulting in a leakage current of a few nanoamperes.

Gate control is achieved by applying a positive voltage slightly in excess of the gate±to±source threshold voltage,

VGS(th).

Gate Voltage Rating Ð Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region.

Gate Termination Ð The gates of these devices are essentially capacitors. Circuits that leave the gate open±circuited or floating should be avoided. These conditions can result in turn±on of the devices due to voltage build±up on the input capacitor due to leakage currents or pickup.

Gate Protection Ð These devices do not have an internal monolithic zener diode from gate±to±source. If gate protection is required, an external zener diode is recommended.

EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY

Collector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Drain
Emitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Source
Base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Gate
V(BR)CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	V(BR)DSS
VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	VDGO
IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	ID
ICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	IDSS
IEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	IGSS
VBE(on) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	VGS(th)
VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	VDS(on)
Cib . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Ciss
Cob . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Coss
hfe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	gfs

RCE(sat) = VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .rDS(on) =

VDS(on)

MOTOROLA RF DEVICE DATA	MRF150
	5

PACKAGE DIMENSIONS

	A		NOTES:
	U		NOTES:
	U		1. DIMENSIONING AND TOLERANCING PER ANSI
	M		1. DIMENSIONING AND TOLERANCING PER ANSI
	M		Y14.5M, 1982.
			2. CONTROLLING DIMENSION: INCH.
1	M			INCHES		MILLIMETERS
Q	M			INCHES		MILLIMETERS
Q	4		DIM	MIN	MAX	MIN	MAX
	4		A	0.960	0.990	24.39	25.14
			A	0.960	0.990	24.39	25.14
	R	B	B	0.465	0.510	11.82	12.95
	R	B	C	0.229	0.275	5.82	6.98
			D	0.216	0.235	5.49	5.96
			E	0.084	0.110	2.14	2.79
2	3		H	0.144	0.178	3.66	4.52
2	3		J	0.003	0.007	0.08	0.17
	D		K	0.435	±±±	11.05	±±±
	D		M	45	NOM	45	NOM
K			M	45	NOM	45	NOM
K			Q	0.115	0.130	2.93	3.30
			R	0.246	0.255	6.25	6.47
J			U	0.720	0.730	18.29	18.54
J

		C	STYLE 2:
H	E	C	PIN 1.	SOURCE
	E	SEATING	2.	GATE
		PLANE	3.	SOURCE
			4.	DRAIN

CASE 211±11

ISSUE N

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

	Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4±32±1,
P.O. Box 5405, Denver, Colorado 80217. 303±675±2140 or 1±800±441±2447	Nishi±Gotanda, Shinagawa±ku, Tokyo 141, Japan. 81±3±5487±8488
Mfax : RMFAX0@email.sps.mot.com ± TOUCHTONE 602±244±6609	ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

± US & Canada ONLY 1±800±774±1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

INTERNET: http://motorola.com/sps

MRF150	◊	MOTOROLA RF DEVICEMRF150/DDATA
6

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