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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF136/D

The RF MOSFET Line

RF Power

Field-Effect Transistors

N-Channel Enhancement-Mode MOSFETs

. . . designed for wideband large±signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push±pull configuration.

• Guaranteed 28 Volt, 150 MHz Performance

MRF136	MRF136Y
Output Power = 15 Watts	Output Power = 30 Watts
Narrowband Gain = 16 dB (Typ)	Broadband Gain = 14 dB (Typ)
Efficiency = 60% (Typical)	Efficiency = 54% (Typical)

•Small±Signal and Large±Signal Characterization

•100% Tested For Load Mismatch At All Phase

Angles With 30:1 VSWR	MRF136	D
• Space Saving Package For
Push±Pull Circuit
Applications Ð MRF136Y
• Excellent Thermal Stability,	G
Ideally Suited For Class A	G
Ideally Suited For Class A
Operation		S
• Facilitates Manual Gain		S
• Facilitates Manual Gain
Control, ALC and	MRF136Y	D
Modulation Techniques	MRF136Y	D
Modulation Techniques
	G	S
		S
	G	(FLANGE)

MAXIMUM RATINGS

MRF136

MRF136Y

15 W, 30 W, to 400 MHz N±CHANNEL

MOS BROADBAND

RF POWER FETs

CASE 211±07, STYLE 2

MRF136

CASE 319B±02, STYLE 1

MRF136Y

Rating	Symbol	Value			Unit
Rating	Symbol				Unit
		MRF136		MRF136Y

Drain±Source Voltage	VDSS	65		65	Vdc
Drain±Gate Voltage (RGS = 1.0 MΩ)	VDGR	65		65	Vdc
Gate±Source Voltage	VGS		± 40		Vdc
Drain Current Ð Continuous	ID	2.5		5.0	Adc
Total Device Dissipation @ TC = 25°C	PD	55		100	Watts
Derate above 25°C		0.314		0.571	W/°C

Storage Temperature Range	Tstg	± 65 to +150			°C
Operating Junction Temperature	TJ		200		°C
THERMAL CHARACTERISTICS

Characteristic	Symbol		Max		Unit
Characteristic	Symbol				Unit
		MRF136		MRF136Y

Thermal Resistance, Junction to Case	RθJC	3.2		1.75	°C/W

Handling and Packaging Ð MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

REV 6

Motorola, Inc. 1994

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS (1)

Drain±Source Breakdown Voltage		V(BR)DSS	65		Ð	Ð	Vdc
(VGS = 0, ID = 5.0 mA)
Zero±Gate Voltage Drain Current		IDSS	Ð		Ð	2.0	mAdc
(VDS = 28 V, VGS = 0)
Gate±Source Leakage Current		IGSS	Ð		Ð	1.0	μAdc
(VGS = 40 V, VDS = 0)
ON CHARACTERISTICS (1)

Gate Threshold Voltage		VGS(th)	1.0		3.0	6.0	Vdc
(VDS = 10 V, ID = 25 mA)
Forward Transconductance		gfs	250		400	Ð	mmhos
(VDS = 10 V, ID = 250 mA)
DYNAMIC CHARACTERISTICS (1)

Input Capacitance		Ciss	Ð		24	Ð	pF
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance		Coss	Ð		27	Ð	pF
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance		Crss	Ð		5.5	Ð	pF
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS (2)

Noise Figure	MRF136	NF	Ð		1.0	Ð	dB
(VDS = 28 Vdc, ID = 500 mA, f = 150 MHz)
Common Source Power Gain (Figure 1)	MRF136	Gps	13		16	Ð	dB
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)
Common Source Power Gain (Figure 2)	MRF136Y	Gps	12		14	Ð	dB
(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA)
Drain Efficiency (Figure 1)	MRF136	η	50		60	Ð	%
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)
Drain Efficiency (Figure 2)	MRF136Y	η	50		54	Ð	%
(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA)
Electrical Ruggedness (Figure 1)	MRF136	ψ
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA,				No Degradation in Output Power
VSWR 30:1 at all Phase Angles)

Electrical Ruggedness (Figure 2)	MRF136Y	ψ
(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA,				No Degradation in Output Power
VSWR 30:1 at all Phase Angles)

NOTES:

1.For MRF136Y, each side measured separately.

2.For MRF136Y measured in push±pull configuration.

MRF136 MRF136Y	MOTOROLA RF DEVICE DATA
2

			R4	C10	RFC2	C11
			R4				VDD = + 28 V


		D1	C8	+
	BIAS	D1	C8	C9
	BIAS			±
	ADJUST			±
	ADJUST
	R3	R2	C7	RFC1
		R2	C7
		R1		L2	L3		C6
C1		L1					RF OUTPUT
C1
RF INPUT
RF INPUT				C4	C3		C5
		C2	DUT	C4	C3		C5
		C2	DUT


C1, C2 Ð Arco 406, 15± 115 pF or Equivalent				L1	Ð 2 Turns, 0.29 ″		ID, #18 AWG, 0.10″ Long
C3	Ð Arco 404, 8± 60 pF or Equivalent			L2	Ð 2 Turns, 0.23 ″		ID, #18 AWG, 0.10″ Long
C4 Ð 43 pF Mini±Unelco or Equivalent				L3	Ð 2±1/4 Turns, 0.29 ″ ID, #18 AWG, 0.125″ Long
C5 Ð 24 pF Mini±Unelco or Equivalent				RFC1 Ð 20 Turns, 0.30 ″ ID, #20 AWG Enamel Closewound
C6	Ð	680 pF, 100 Mils Chip		RFC2 Ð Ferroxcube VK±200 Ð 19/4B
C7	Ð	0.01	mF Ceramic	R1		Ð 27 W, 1 W Thin Film
C8	Ð	100	mF, 40 V	R2		Ð 10 k W, 1/4 W
C9	Ð	0.1	mF Ceramic	R3		Ð 10 Turns, 10 k W
C10,		C11 Ð 680 pF Feedthru		R4		Ð 1.8 k W, 1/2 W
D1	Ð	1N5925A Motorola Zener		Board Material Ð 0.062 ″ G10, 1 oz. Cu Clad, Double Sided

Figure 1. 150 MHz Test Circuit (MRF136)

	R4		R6
	BIAS
	ADJUST	D1	C11
			RFC1
C2	R2	C3	R5	C5	RFC2	C8
					RFC2

						VDD = + 28 V
	R1			C6		C7
	R1
RF INPUT	G		D
	G
	T1		T2			RF OUTPUT
	T1		T2
C1			S
C1	B		S
A	B
	G		D
		DUT	C9	C10
	R3	DUT	C4
	R3		C4

C1	Ð 5.0 pF	R5 Ð 56 k W, 1 W
C2, C3, C4, C6, C7, C9, C11 Ð 0.1 mF Ceramic		R6 Ð 1.6 k W, 1/4 W
C5, C8 Ð 680 pF Feedthru		T1	Ð Primary Winding Ð 3 Turns #28 Enameled Wire.
C10 Ð 15 pF		T1 Ð Secondary Winding Ð 2 Turns #28 Enameled Wire.
D1	Ð 1N4740 Motorola Zener	T1	Ð Both windings wound through a Fair/Rite Balun 65 core.
RFC1 Ð 17 Turns, #24 AWG Wound on R5		T1	Ð Part #2865002402.
RFC2 Ð Ferroxcube VK±200±19/4B or Equivalent		T2	Ð 1:1 Transformer Wound Bifilar Ð 2 Turns Twisted Pair
R1	Ð 10 k W, 1/4 W	T1	Ð #24 Enameled Wire through a Indiana General Balun Q1
R2, R3 Ð 560 W, 1/2 W		T1	Ð core. Part #18006±1±Q1. Primary winding center tapped.
R4	Ð 10 Turns, 10 k W	Board Material Ð 0.062 ″ G10, 1 oz. Cu Clad, Double Sided

Figure 2. 30± 150 MHz Test Circuit (MRF136Y)

MOTOROLA RF DEVICE DATA	MRF136 MRF136Y
	3

	20
(WATTS)	18	f = 100 MHz		150 MHz	200 MHz
	16	f = 100 MHz		150 MHz	200 MHz
	16
	14
POWER	12
POWER	10
, OUTPUT	10
	8
	6				VDD = 28 V
out	4				VDD = 28 V
P	4				IDQ = 25 mA
	2				IDQ = 25 mA
	2
	0	200	400	600	800	1000
	0	200	400	600	800	1000
		Pin, INPUT POWER (MILLWATTS)

	10
(WATTS)	9		f = 100 MHz
	8		f = 100 MHz
	8
	7				150 MHz
POWER	6				150 MHz
	6			200 MHz
	5			200 MHz

, OUTPUT
	4
	3				VDD = 13.5 V
out	2				VDD = 13.5 V
P	2				IDQ = 25 mA
	1				IDQ = 25 mA
	1
	0	200	400	600	800	1000
	0	200	400	600	800	1000
			Pin, INPUT POWER (MILLWATTS)

Figure 3. Output Power versus Input Power

Figure 4. Output Power versus Input Power

	20						24
(WATTS)	18	f = 400 MHz		VDD = 28 V		(WATTS)	21
							21					Pin = 600 mW
	14
	16	IDQ = 25 mA					18
POWER		IDQ = 25 mA				POWER	18
POWER	12					POWER	15						400 mW
							15

	10
OUTPUT,	10					OUTPUT,	12
OUTPUT,	6					OUTPUT,								200 mW
	8			VDD = 13.5 V			9							200 mW
out				VDD = 13.5 V		out	9
out	4					out	6						IDQ = 25 mA
P						P	6
P						P

	2						3						f = 100 MHz
	0	1	2	3	4		0	14	16	18	20	22	24	26	28
	0	1	2	3	4		12	14	16	18	20	22	24	26	28
			Pin, INPUT POWER (WATTS)						VDD, SUPPLY VOLTAGE (VOLTS)

Figure 5. Output Power versus Input Power

Figure 6. Output Power versus Supply Voltage

	24
	24
(WATTS)	21
(WATTS)	18
POWER	18
POWER	15
	15
OUTPUT,	12
OUTPUT,	9
	9
out	6
P
	3
	0
	0
	12

					Pin = 900 mW				24
					Pin = 900 mW				21
								(WATTS)	21						Pin = 1 W
								(WATTS)	18

						600 mW
						600 mW		POWER
								POWER	15						0.7 W
									15

								OUTPUT,	12
						300 mW		OUTPUT,	9						0.4 W
						300 mW

					IDQ = 25 mA			out	6						IDQ = 25 mA
					IDQ = 25 mA			P							IDQ = 25 mA
					f = 150 MHz				3						f = 200 MHz
14	16	18	20	22	24	26	28		0	14	16	18	20	22	24	26	28
14	16	18	20	22	24	26	28		12	14	16	18	20	22	24	26	28
	VDD, SUPPLY VOLTAGE (VOLTS)										VDD, SUPPLY VOLTAGE (VOLTS)

Figure 7. Output Power versus Supply Voltage

Figure 8. Output Power versus Supply Voltage

MRF136 MRF136Y	MOTOROLA RF DEVICE DATA
4

	20
(WATTS)	18	IDQ = 25 mA				Pin = 3 W
	16	f = 400 MHz				Pin = 3 W
	16
	14							2 W
POWER	12							2 W
	12
	10
, OUTPUT	10								1 W
	8								1 W
	8
	6
out	4
P	4
	2
	012	14	16	18	20	22	24	26	28
			VDD, SUPPLY VOLTAGE (VOLTS)

Figure 9. Output Power versus Supply Voltage

	16
	14	VDD = 28 V
(WATTS)	14	IDQ = 25 mA						400 MHz
	12	Pin = CONSTANT						400 MHz
	12

POWER	10
POWER	8
OUTPUT	8
	6	TYPICAL DEVICE							150 MHz
		TYPICAL DEVICE
		SHOWN, VGS(th) = 3 V
		SHOWN, VGS(th) = 3 V
,	4
out	4
out
P
	2
	0± 7	± 6	± 5	± 4	± 3	± 2	±1	0	1	2	3
				VGS, GATE±SOURCE VOLTAGE (VOLTS)

Figure 10. Output Power versus Gate Voltage

ID, DRAIN CURRENT (MILLAMPS)

			MRF136				(NORMALIZED)					MRF136
2							(NORMALIZED)	1.04		VDS = 28 V			ID = 750 mA
2								1.04
1.8								1.03
1.8	TYPICAL DEVICE							1.03
1.6	TYPICAL DEVICE							1.02							500 mA
1.6	SHOWN, VGS(th)		= 3 V					1.02							500 mA
1.4	SHOWN, VGS(th)		= 3 V					1.01
1.4							VOLTAGE	1.01
1							VOLTAGE	0.99
1.2								1
0.6				VDS	= 10 V		SOURCE	0.97							250 mA
0.8								0.98							250 mA
							-						25 mA
0.4							GATE	0.96					25 mA
0.4								0.96
0.2							,	0.95
							GS
0							V	0.94
0	1	2	3	4	5	6	7	0.94	0	25	50	75	100	125	150	175
0	1	2	3	4	5	6	7	± 25	0	25	50	75	100	125	150	175
		VDS, GATE±SOURCE VOLTAGE (VOLTS)									TC, CASE TEMPERATURE (°C)

Figure 11. Drain Current versus Gate Voltage

Figure 12. Gate±Source Voltage versus

			(Transfer Characteristics)*
				MRF136/MRF136Y
	100								10
	180					VGS = 0 V		(AMPS)	5
	180					VGS = 0 V
(pF)						f = 1 MHz			3
									3
									2
C, CAPACITANCE	60							DRAIN CURRENT	2
	60		Coss
			Coss
									1
	40		Ciss

								,	0.3
			Crss					D
	20							I
	20								0.2
									0.2
	0	4	8	12	16	20	24	28	0.1
	0	4	8	12	16	20	24	28

			Case Temperature*
			MRF136/MRF136Y
		MRF136Y
		MRF136
	TC = 25°C
1	2	3	5	10	20	30	50	70	100

VDS, DRAIN±SOURCE VOLTAGE (VOLTS)	VDS, DRAIN±SOURCE VOLTAGE (VOLTS)
Figure 13. Capacitance versus Drain±Source Voltage*	Figure 14. DC Safe Operating Area
MRF136/MRF136Y	MRF136/MRF136Y

*Data shown applies to MRF136 and each half of MRF136Y.

MOTOROLA RF DEVICE DATA	MRF136 MRF136Y
	5

MRF136Y

TYPICAL PERFORMANCE IN BROADBAND TEST CIRCUIT (Refer to Figure 2)

Pout, OUTPUT POWER (WATTS)

								16
								14
							(dB)	12
							(dB)	10
f = 150 MHz							GAIN	10
							GAIN

	30 MHz						POWER	8
							POWER

								6	VDD = 28 V
		V	DD		= 28 V			4	IDQ = 100 mA
		I		= 100 mA				4	Pout = 30 W
		DQ
								2
0.5	1	1.5	2			2.5		0	20	40	60	80	100	120	140	160
0.5	1	1.5	2			2.5		0	20	40	60	80	100	120	140	160
	Pin, INPUT POWER (WATTS)										f, FREQUENCY (MHz)

Figure 15. Output Power versus Input Power

Figure 16. Power Gain versus Frequency

	100									30
	90	VDD = 28 V							(WATTS)POWEROUTPUT,		VDD = 28 V		f = 150 MHz
(%)EFFICIENCY,η	30	IDQ = 100 mA								10	IDQ = 100 mA		f = 150 MHz
(%)EFFICIENCY,η	30									10
	80									25					30 MHz
	80	Pout = 30 W									Pin = CONSTANT				30 MHz
	70	Pout = 30 W									Pin = CONSTANT
	70									20	TYPICAL DEVICE
	60									20	TYPICAL DEVICE
	60										SHOWN, VGS(th) = 3 V
	50									15
	40
	20								out
	20								P	5
										5
	10
	0	20	40	60	80	100	120	140	160	0	± 4	± 2	0	2	4	6
	0	20	40	60	80	100	120	140	160	± 6	± 4	± 2	0	2	4	6
				f, FREQUENCY (MHz)							VGS, GATE±SOURCE VOLTAGE (VOLTS)

Figure 17. Drain Efficiency versus Frequency

Figure 18. Output Power versus Gate Voltage

TYPICAL 400 MHz PERFORMANCE

	40									40
(WATTS)	35								(WATTS)	35	VDD = 28 V
	30										IDQ = 100 mA
	30									30	Pin = CONSTANT
											TYPICAL DEVICE
POWER	25								POWER	25	TYPICAL DEVICE
	25									25	SHOWN, VGS(th) = 3 V
	20										SHOWN, VGS(th) = 3 V
										20
, OUTPUT									, OUTPUT	20
	15									15
	10						VDD = 28 V			10
out	10						IDQ = 100 mA		out	10							f = 400 MHz
out									out
P									P
	5						f = 400 MHz			5
	5									5
	0	0.5	1	1.5	2	2.5	3	3.5		0	± 3	± 2	±1	0	1	2	3	4
	0	0.5	1	1.5	2	2.5	3	3.5		± 4	± 3	± 2	±1	0	1	2	3	4

Pin, INPUT POWER (WATTS)	VGS, GATE±SOURCE VOLTAGE (VOLTS)
Figure 19. Output Power versus Input Power	Figure 20. Output Power versus Gate Voltage

MRF136 MRF136Y	MOTOROLA RF DEVICE DATA
6

400

200

Zin{ 150

f = 100 MHz

VDD = 28 V, IDQ = 25 mA,

Pout = 15 W

f	Zin{
MHz	OHMS

100	7.5 ± j9.73
150	4.11 ± j7.56
200	2.66 ± j6.39
400	2.39 ± j2.18

{27 Ω Shunt Resistor Gate±to±Ground

Figure 21. Large±Signal Series Equivalent

Input Impedance, Zin²

MRF136

400

200

ZOL*

150

f = 100 MHz

VDD = 28 V, IDQ = 25 mA,

Pout = 15 W

f	ZOL*
MHz	OHMS

100	13.7	± j16.8
150	9.08	± j15.38
200	4.74	± j8.92
400	4.28	± j4.17

ZOL* = Conjugate of the optimum load impedance into which the device operates at a given output power, voltage and frequency.

Figure 22. Large±Signal Series Equivalent

Output Impedance, ZOL*

MRF136

		400
	225
	400
150	Zin
150	225
	225
		ZOL*
	150
	100
	100	50
		f = 30 MHz
	50	f = 30 MHz

Zin & ZOL* are given from drain±to±drain and

gate±to±gate respectively.

VDD = 28 V, IDQ = 100 mA,

Pout = 30 W

f	Zin{		ZOL*
MHz	Ohms		Ohms

30	59.3	± j24	40.1	± j8.52
50	48	± j33.5	37	± j11.9
100	20.5	± j34.2	29	± j16.5
150	4.77	± j25.4	20.6	± j19
225	3	± j9.5	13	± j16.7
400	2.34	± j3.31	10.2	± j14.3

Feedback loops: 560 ohms in series with 0.1μF Drain to gate, each side of push±pull FET ZOL* = Conjugate of the optimum load impedance into which the device operates at a given output power, voltage and frequency.

	Figure 23. Input and Outut Impedance
	MRF136Y

MOTOROLA RF DEVICE DATA	MRF136 MRF136Y
	7

MRF136

f		S11			S21			S12			S22
(MHz)	\|S11\|		± φ	\|S21\|		± φ	\|S12\|		± φ	\|S22\|		± φ
2.0	0.988		± 11	41.19		173	0.006		67	0.729		± 12

5.0	0.970		± 27	40.07		164	0.014		62	0.720		± 31

10	0.923		± 52	35.94		149	0.026		54	0.714		± 58

20	0.837		± 88	27.23		129	0.040		36	0.690		± 96

30	0.784		± 111	20.75		117	0.046		27	0.684		± 118

40	0.751		± 125	16.49		108	0.048		22	0.680		± 131

50	0.733		± 135	13.41		103	0.050		19	0.679		± 139

60	0.720		± 1 42	11.43		99	0.050		16	0.678		± 145

70	0.709		± 147	9.871		96	0.050		14	0.679		± 149

80	0.707		± 152	8.663		93	0.051		13	0.683		± 153

90	0.706		± 155	7.784		91	0.051		13	0.682		± 155

100	0.708		± 157	7.008		88	0.051		13	0.680		± 157

110	0.711		± 159	6.435		86	0.051		14	0.681		± 158

120	0.714		± 161	5.899		85	0.051		15	0.682		± 159

130	0.717		± 163	5.439		82	0.052		16	0.684		± 160

140	0.720		± 164	5.068		80	0.052		17	0.684		± 161

150	0.723		± 165	4.709		80	0.052		18	0.686		± 161

160	0.727		± 166	4.455		78	0.052		18	0.690		± 161

170	0.732		± 167	4.200		77	0.052		18	0.694		± 162

180	0.735		± 168	3.967		75	0.052		19	0.699		± 162

190	0.738		± 169	3.756		74	0.052		19	0.703		± 163

200	0.740		± 170	3.545		73	0.052		20	0.706		± 163

225	0.746		± 171	3.140		69	0.053		22	0.717		± 163

250	0.742		± 172	2.783		67	0.053		25	0.724		± 163

275	0.744		± 173	2.540		64	0.054		27	0.724		± 163

300	0.751		± 174	2.323		60	0.055		29	0.736		± 163

325	0.757		± 175	2.140		58	0.058		32	0.749		± 163

350	0.760		± 176	1.963		54	0.059		35	0.758		± 163

375	0.762		± 177	1.838		52	0.062		38	0.768		± 163

400	0.774		± 179	1.696		50	0.065		41	0.783		± 163

425	0.775		± 179	1.590		48	0.068		43	0.793		± 163

450	0.781		+ 179	1.493		46	0.071		46	0.805		± 163

475	0.787		+ 177	1.415		43	0.074		47	0.813		± 164

500	0.792		+ 176	1.332		40	0.079		48	0.825		± 164

525	0.797		+ 175	1.259		38	0.083		50	0.831		± 164

550	0.801		+ 175	1.185		37	0.088		51	0.843		± 164

575	0.810		+ 174	1.145		36	0.094		52	0.855		± 164

600	0.816		+ 173	1.091		34	0.101		52	0.869		± 165

625	0.818		+ 171	1.041		32	0.106		53	0.871		± 165

650	0.825		+ 170	0.994		30	0.112		53	0.884		± 165

675	0.834		+ 169	0.962		29	0.119		53	0.890		± 165

700	0.837		+ 168	0.922		27	0.127		53	0.906		± 166

725	0.836		+ 167	0.879		25	0.133		52	0.909		± 167

750	0.841		+ 166	0.838		25	0.140		53	0.917		± 167

775	0.844		+ 165	0.824		24	0.148		52	0.933		± 167

800	0.846		+ 163	0.785		21	0.154		50	0.941		± 168

Table 1. Common Source Scattering Parameters

VDS = 28 V, ID = 0.5 A

MRF136 MRF136Y	MOTOROLA RF DEVICE DATA
8

				+j50
		+j25						+j100
								+j150
+j10	f = 800 MHz							+j250
	f = 800 MHz							+j500
								+j500
0		10	25	50	100	150	250	500
0		400
		400
	150							± j500
± j10		70		S11				± j250
		70
								± j150
		± j25						± j100
		± j25
				± j50
Figure 24. S11, Input Reflection Coefficient
			versus Frequency
			VDS = 28 V		ID = 0.5 A
				+90°
		+120°		70			+60°
				100
+150°			S21		150			+30°
			S21		150
180°	8	6	4	2	400			0°
	8	6	4	2	f = 800 MHz
					f = 800 MHz
±150°								± 30°
±150°
		±120°					± 60°
				± 90°

Figure 26. S21, Forward Transmission Coefficient versus Frequency

VDS = 28 V ID = 0.5 A

								+90°
			+120°						+60°
+150°									f = 800 MHz
+150°					S12					+30°
					S12				600
									400
180°	0.18	0.14		0.10		0.06		0.02	70	0°
180°	0.16		0.12		0.08		0.04			0°
	0.16		0.12		0.08		0.04
±150°										± 30°
±150°
			±120°						± 60°
								±90°

Figure 25. S12, Reverse Transmission Coefficient

		versus Frequency
	VDS = 28 V			ID = 0.5 A
			+j50
	+j25						+j100
							+j150
+j10							+j250
							+j500
0	10	25	50	100	150	250	500
0
f = 800 MHz
	150						± j500
	400						± j500
	400
± j10	70						± j250
± j10							± j250
			S22				± j150
							± j150
	± j25						± j100
	± j25

± j50

Figure 27. S22, Output Reflection Coefficient versus Frequency

VDS = 28 V ID = 0.5 A

MOTOROLA RF DEVICE DATA	MRF136 MRF136Y
	9

DESIGN CONSIDERATIONS

The MRF136 and MRF136Y are RF power N±Channel enhancement mode field±effect transistors (FETs) designed especially for HF and VHF power amplifier applications. Motorola RF MOS FETs feature planar design for optimum manufacturability.

Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs.

The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal, thus facilitating manual gain control, ALC and modulation.

DC BIAS

The MRF136 and MRF136Y are enhancement mode FETs and, therefore, do not conduct when drain voltage is applied without gate bias. A positive gate voltage causes drain current to flow (see Figure 11). RF power FETs require forward bias for optimum gain and power output. A Class AB condition with quiescent drain current (IDQ) in the 25±100 mA range is sufficient for many applications. For special requirements such as linear amplification, IDQ may have to be adjusted to optimize the critical parameters.

The MOS gate is a dc open circuit. Since the gate bias circuit does not have to deliver any current to the FET, a simple resistive divider arrangement may sometimes suffice for this function. Special applications may require more elaborate gate bias systems.

GAIN CONTROL

Power output of the MRF136 and MRF136Y may be controlled from rated values down to the milliwatt region (>20 dB reduction in power output with constant input power) by varying the dc gate voltage. This feature, not available in

bipolar RF power devices, facilitates the incorporation of manual gain control, AGC/ALC and modulation schemes into system designs. A full range of power output control may require dc gate voltage excursions into the negative region.

AMPLIFIER DESIGN

Impedance matching networks similar to those used with bipolar transistors are suitable for MRF136 and MRF136Y. See Motorola Application Note AN721, Impedance Matching Networks Applied to RF Power Transistors. Both small signal scattering parameters (MRF136 only) and large signal impedance parameters are provided. Large signal impedances should be used for network designs wherever possible. While the s parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is particularly useful at frequencies outside those presented in the large signal impedance plots.

RF power FETs are triode devices and are therefore not unilateral. This, coupled with the very high gain, yields a device capable of self oscillation. Stability may be achieved using techniques such as drain loading, input shunt resistive loading, or feedback. S parameter stability analysis can provide useful information in the selection of loading and/or feedback to insure stable operation. The MRF136 was characterized with a 27 ohm input shunt loading resistor, while the MRF136Y was characterized with a resistive feedback loop around each of its two active devices.

For further discussion of RF amplifier stability and the use of two port parameters in RF amplifier design, see Motorola Application Note AN215A on page 6±204 in the RF Device Data (DL110 Rev 1).

LOW NOISE OPERATION

Input resistive loading will degrade noise performance, and noise figure may vary significantly with gate driving impedance. A low loss input matching network with its gate impedance optimized for lowest noise is recommended.

MRF136 MRF136Y	MOTOROLA RF DEVICE DATA
10

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