MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF20030/D
The RF Sub±Micron Bipolar Line
RF Power Bipolar Transistor
Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large±signal, common±emitter class A and class AB amplifier applications. Suitable for frequency modulated, amplitude modulated and multi±carrier base station RF power amplifiers.
•Specified 26 Volts, 2.0 GHz, Class AB, Two±Tones Characteristics Output Power Ð 30 Watts (PEP)
Power Gain Ð 9.8 dB Efficiency Ð 34%
Intermodulation Distortion Ð ±28 dBc
•Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics
Output Power Ð 30 Watts
Power Gain Ð 10.5 dB
Efficiency Ð 40%
•Excellent Thermal Stability
•Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP) Output Power
•Characterized with Series Equivalent Large±Signal Impedance Parameters
•S±Parameter Characterization at High Bias Levels
•Designed for FM, TDMA, CDMA, and Multi±Carrier Applications
MRF20030
30 W, 2.0 GHz
NPN SILICON
BROADBAND
RF POWER TRANSISTOR
CASE 395D±03, STYLE 1
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
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Collector±Emitter Voltage |
VCEO |
25 |
Vdc |
Collector±Emitter Voltage |
VCES |
60 |
Vdc |
Collector±Base Voltage |
VCBO |
60 |
Vdc |
Collector±Emitter Voltage (RBE = 100 Ω) |
VCER |
30 |
Vdc |
Emitter±Base Voltage |
VEB |
±3 |
Vdc |
Collector Current ± Continuous |
IC |
4 |
Adc |
Total Device Dissipation @ TC = 25°C |
PD |
125 |
Watts |
Derate above 25°C |
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0.71 |
W/°C |
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Storage Temperature Range |
Tstg |
± 65 to +150 |
°C |
Operating Junction Temperature |
TJ |
200 |
°C |
THERMAL CHARACTERISTICS |
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Rating |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case (1) |
RθJC |
1.4 |
°C/W |
(1) Thermal resistance is determined under specified RF operating condition. |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS
Collector±Emitter Breakdown Voltage |
V(BR)CEO |
25 |
26 |
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Vdc |
(IC = 25 mAdc, IB = 0) |
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Collector±Emitter Breakdown Voltage |
V(BR)CES |
60 |
70 |
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Vdc |
(IC = 25 mAdc, VBE = 0) |
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Collector±Base Breakdown Voltage |
V(BR)CBO |
60 |
70 |
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Vdc |
(IC = 25 mAdc, IE = 0) |
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REV 1 |
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MOTOROLAMotorola, Inc. 1997RF DEVICE DATA |
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MRF20030 |
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1 |
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ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)
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Characteristic |
Symbol |
Min |
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Max |
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OFF CHARACTERISTICS |
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Emitter±Base Breakdown Voltage |
V(BR)EBO |
3 |
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3.8 |
Ð |
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Vdc |
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(IB = 5 mAdc, IC = 0) |
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Collector Cutoff Current |
ICES |
Ð |
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10 |
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mAdc |
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(VCE = 30 Vdc, VBE = 0) |
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ON CHARACTERISTICS |
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DC Current Gain |
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hFE |
20 |
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40 |
80 |
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(VCE = 5 Vdc, ICE = 1 Adc) |
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DYNAMIC CHARACTERISTICS |
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Output Capacitance |
= 0, f = 1.0 MHz) (1) |
Cob |
Ð |
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28 |
Ð |
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pF |
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(V = 26 Vdc, I |
E |
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CB |
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FUNCTIONAL TESTS (In Motorola Test Fixture) |
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Common±Emitter Amplifier Power Gain |
Gpe |
9.8 |
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10.5 |
Ð |
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dB |
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(VCC = 26 Vdc, Pout = 30 Watts, ICQ = 120 mA, |
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f1 = 2000.0 MHz, f2 = 2000.1 MHz) |
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Collector Efficiency |
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η |
34 |
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38 |
Ð |
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% |
(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, |
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f1 = 2000.0 MHz, f2 = 2000.1 MHz) |
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Intermodulation Distortion |
IMD |
Ð |
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± 33 |
± 28 |
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dBc |
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(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, |
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f1 = 2000.0 MHz, f2 = 2000.1 MHz) |
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Input Return Loss |
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IRL |
10 |
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17 |
Ð |
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dB |
(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, |
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f1 = 2000.0 MHz, f2 = 2000.1 MHz) |
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Load Mismatch |
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(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, |
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No Degradation in Output Power |
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f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 3:1, All Phase |
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Angles at Frequency of Test) |
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Common±Emitter Amplifier Power Gain |
Gpe |
Ð |
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10.5 |
Ð |
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dB |
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(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, |
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f1 = 1930.0 MHz, f2 = 1930.1 MHz) |
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Collector Efficiency |
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η |
Ð |
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34 |
Ð |
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% |
(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, |
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f1 = 1930.0 MHz, f2 = 1930.1 MHz) |
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Intermodulation Distortion |
IMD |
Ð |
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± 35 |
Ð |
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dBc |
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(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, |
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f1 = 1930.0 MHz, f2 = 1930.1 MHz) |
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Input Return Loss |
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IRL |
Ð |
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14 |
Ð |
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dB |
(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, |
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f1 = 1930.0 MHz, f2 = 1930.1 MHz) |
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GUARANTEED BUT NOT TESTED (In Motorola Test Fixture) |
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Common±Emitter Amplifier Power Gain |
Gpe |
Ð |
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10.5 |
Ð |
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dB |
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(VCC = 26 Vdc, Pout = 30 Watts, ICQ = 125 mA, f = 1880 MHz) |
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Collector Efficiency |
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η |
Ð |
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40 |
Ð |
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% |
(VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz) |
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Input Return Loss |
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IRL |
Ð |
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14 |
Ð |
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dB |
(VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz) |
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Output Mismatch Stress |
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(VCC = 25 Vdc, Pout = 30 Watts, ICQ = 125 mA, |
ψ |
Typically No Degradation in Output Power |
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f = 1880 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test) |
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(1) For Information Only. This Part Is Collector Matched. |
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MRF20030 |
MOTOROLA RF DEVICE DATA |
2 |
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VBB |
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R1 |
R2 |
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Q2 |
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L1 |
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L4 |
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VCC |
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D1 |
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B1 |
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B2 |
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Q1 |
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+ |
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C6 |
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C8 |
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+ |
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C1 |
C2 |
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R5 |
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C7 |
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C9 |
R8 |
C13 |
C14 |
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R3 |
R4 |
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R6 |
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R7 |
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L4 |
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L2 |
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Z5 |
Z6 |
Z7 |
Z8 |
RF |
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Z1 |
Z2 |
Z3 |
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Z4 |
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RF |
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OUT |
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C11 |
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INPUT |
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C10 |
C12 |
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C3 |
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C4 |
C5 |
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DUT |
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B1, B2 |
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Ferrite Bead, P/N 5659065/3B, Ferroxcube |
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N1, N2 |
Type N Flange Mount RF Connector |
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C1, C13 |
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0.1 mF, Chip Capacitor, Kermet |
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MA/COM 3052±1648±10 |
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C2 |
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100 mF, 50 V, Electrolytic Capacitor, Mallory |
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R1, R2 |
130 W, 1/8 W Chip Resistor, Rohm |
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C3, C5, C12 |
0.6±4 pF, Variable Capacitor, Johanson, Gigatrim |
R3, R4 |
100 W, 1/8 W Chip Resistor, Rohm |
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C4, C11 |
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10 pF, B Case Chip Capacitor, ATC |
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R5, R8 |
10 W, 1/2 W Resistor |
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C6, C8 |
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24 pF, B Case Chip Capacitor, ATC |
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R6, R7 |
10 W, 1/8 W Chip Resistor, Rohm (10J) |
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C7, C9 |
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75 pF, B Case Chip Capacitor, ATC |
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Q1 |
Transistor, PNP Motorola (BD136) |
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C10 |
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0.4±2.5 pF, Variable Capacitor, Johanson, Gigatrim |
Q2 |
Transistor, NPN Motorola (MJD47) |
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C14 |
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470 mF, 63 V, Electrolytic Capacitor, Mallory |
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Board |
30 Mil Glass Teflon , Arlon GX±0300±55±22, |
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D1 |
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Diode, Motorola (MUR3160T3) |
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er = 2.55 |
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L1, L4 |
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12 Turns, 22 AWG, IDIA. 0.195″ |
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L2, L3 |
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0.750″ 20 AWG |
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Figure 1. Class AB Test Fixture Electrical Schematic
MOTOROLA RF DEVICE DATA |
MRF20030 |
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3 |
Vsupply |
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+ |
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R1 |
C2 |
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R5 |
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R2 |
VCC |
VCC |
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Q1 |
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R3 |
Q2 |
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R4 |
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R6 |
R8 |
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+ |
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B2 |
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R7 |
B1 |
C6 |
C8 |
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+ |
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C11 |
C12 |
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C14 |
C15 |
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R9 |
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C5 |
C7 |
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L1 |
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L2 |
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N2 |
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N1 |
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C10 |
RF |
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C3 |
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OUTPUT |
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Z6 |
Z7 |
Z8 |
Z9 |
Z10 |
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NPUT |
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Z2 |
Z3 |
Z4 |
Z5 |
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Z1 |
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DUT |
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C13 |
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C1 |
C4 |
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C9 |
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B1, B2 |
Long Bead, Fair Rite |
Q1 |
Transistor, NPN, Motorola (BD135) |
C1, C9, C13 |
0.6±4 pF, Variable Capacitor, Johanson, Gigatrim |
Q2 |
Transistor, PNP, Motorola (BD136) |
C2, C8 |
100 μF, 50 V, Electrolytic Capacitor, Mallory |
R1 |
250 W, Chip Resistor, 1/8 Watt, Rohm |
C3, C10 |
18 pF B Case Chip Capacitor, ATC |
R2 |
500 W, 1/4 Watt, Potentiometer |
C4 |
1.3 pF, B Case Chip Capacitor, ATC |
R3 |
4.7 kW, Chip Resistor, 1/8 Watt, Rohm |
C5, C11 |
24 pF, B Case Chip Capacitor, ATC |
R4 |
2 x 4.7 kW, Chip Resistor, 1/8 Watt, Rohm |
C6, C14 |
0.1 mF, Chip Capacitor, Kermet |
R5 |
1.0 W, 10 Watt, Resistor, DALE |
C7, C12 |
75 pF, B Case Chip Capacitor, ATC |
R6 |
39 W, 1 Watt, Resistor |
C15 |
470 mF, 63 V, Electrolytic Capacitor, Mallory |
R7, R9 |
4 x 39 W, Chip Resistors, 1/8 Watt, Rohm |
L1, L2 |
0.75 in., 20 AWG |
R8 |
75 W, Chip Resistor, 1/8 Watt, Rohm |
N1, N2 |
Type N Flange Mount RF |
Board |
30 Mil Glass Teflon , Arlon GX±0300±55±22, |
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Connector, MA/COM |
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εr = 2.55 |
Figure 2. Class A Test Fixture Electrical Schematic
MRF20030 |
MOTOROLA RF DEVICE DATA |
4 |
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TYPICAL CHARACTERISTICS
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35 |
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(WATTS) |
30 |
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25 |
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Pout |
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POWER |
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20 |
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Gpe |
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OUTPUT, |
10 |
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15 |
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out |
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V |
= 26 |
Vdc |
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P |
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CC |
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5 |
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ICQ = 125 |
mA |
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0 |
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f = 2000 MHz Single Tone |
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3 |
4 |
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0 |
2 |
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Pin, INPUT POWER (WATTS)
Figure 3. Output Power & Power Gain
versus Input Power
11.540
11 |
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35 |
Pin = 3.5 W |
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(dB)GAIN |
POWER(WATTS) |
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20 |
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1.5 W |
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10.5 |
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30 |
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2.5 W |
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10 |
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25 |
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9.5 |
G |
OUTPUT |
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, |
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pe |
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15 |
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9 |
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10 |
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out |
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VCC = 26 Vdc |
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8.5 |
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P |
5 |
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ICQ = 125 mA |
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8 |
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0 |
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5 |
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1800 |
1850 |
1900 |
1950 |
2000 |
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f, FREQUENCY (MHz)
Figure 4. Output Power versus Frequency
IMD, INTERMODULATION DISTORTION (dBc)
±20
±30
±40
±50
±60
±70
0
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11.5 |
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11 |
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3rd |
Order |
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10.5 |
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G |
pe |
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(dB) |
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5th |
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GAIN |
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9.5 |
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7th |
Order |
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pe |
9 |
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G |
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VCC = 26 Vdc |
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8.5 |
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Pout = 30 W (PEP) |
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IMD |
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ICQ = 125 mA |
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I |
CQ |
= 125 mA |
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f1 = 2000.0 MHz |
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8 |
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f1 = 2000.0 MHz |
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f2 = 2000.1 MHz |
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7.5 |
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f2 = 2000.1 MHz |
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5 |
10 |
15 |
20 |
25 |
30 |
35 |
40 |
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20 |
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22 |
24 |
26 |
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18 |
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Pout, OUTPUT POWER (WATTS) PEP |
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VCC, COLLECTOR SUPPLY VOLTAGE (Vdc) |
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Figure 5. Intermodulation Distortion |
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Figure 6. Power Gain and Intermodulation |
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versus Output Power |
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Distortion versus Supply Voltage |
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±5
±10
±15
±20
±25
±30
±35
±40
±45
28
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
± 25 |
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± 30 |
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± 35 |
ICQ = 75 mA |
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±40
±45 125 mA
±50
|
250 mA |
VCC = 26 Vdc |
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± 55 |
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f1 = 2000.0 MHz |
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± 60 |
400 mA |
f2 = 2000.1 MHz |
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0.1 |
1.0 |
10 |
100 |
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0.01 |
Pout, OUTPUT POWER (WATTS) PEP
Gpe, POWER GAIN (dB)
12
ICQ = 400 mA
11
250 mA
10
9
125 mA
8
7 |
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VCC = 26 Vdc |
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6 |
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f1 = 2000.0 MHz |
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5 |
75 mA |
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f2 = 2000.1 MHz |
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0.1 |
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0.01 |
1.0 |
10 |
100 |
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion |
Figure 8. Power Gain versus Output Power |
versus Output Power |
|
MOTOROLA RF DEVICE DATA |
MRF20030 |
|
5 |
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4 |
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11 |
Pout = 30 W (PEP) |
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38 |
(%) |
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(Adc)CURRENTCOLLECTOR |
1 |
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LIMITED |
G |
9.5 |
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32 |
EFFICIENCYCOLLECTOR |
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VCC = 26 Vdc |
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3.5 |
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Gpe |
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MTBF LIMITED |
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ICQ = 125 mA |
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3 |
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Tflange = 75°C |
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10.5 |
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36 |
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2.5 |
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Tflange = 100°C |
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(dB) |
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2 |
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GAIN, |
10 |
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34 |
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1.5 |
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pe |
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η |
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BREAKDOWN |
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VSWRINPUT |
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I |
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, |
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TJ = 175°C |
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C |
0.5 |
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VSWR |
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0 |
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9 |
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28 |
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0 |
4 |
8 |
12 |
16 |
20 |
24 |
28 |
1800 |
1850 |
1900 |
1950 |
2000 |
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VCE, COLLECTOR SUPPLY VOLTAGE (Vdc) |
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f, FREQUENCY (MHz) |
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Figure 9. DC Class A Safe Operating Area |
Figure 10. Performance in Broadband Circuit |
1.7:1
1.1:1
(dBm) |
60 |
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40 |
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FUNDAMENTAL |
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POWER |
20 |
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OUTPUT, |
0 |
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3rd Order |
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V |
CC = 24 |
Vdc |
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out |
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ICQ = 1.8 |
Adc |
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P |
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± 20 |
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f1 = 2000.0 MHz |
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f2 = 2000.1 MHz |
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± 40 |
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0 |
10 |
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20 |
30 |
40 |
50 |
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Pin, INPUT POWER (dBm)
Figure 11. Class A Third Order Intercept Point
2 MTBF FACTOR (HOURS x AMPS )
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
1.E+02
0 |
50 |
100 |
150 |
200 |
250 |
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTBF in hours x ampere2 emitter current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure.
Divide MTBF factor by IC2 for MTBF in a particular application.
Figure 12. MTBF Factor versus Junction Temperature
MRF20030 |
MOTOROLA RF DEVICE DATA |
6 |
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+ j1 |
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+ j0.5 |
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+ j2 |
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f = 1.8 GHz |
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+ j3 |
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Zo = 10 Ω |
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1.85 GHz |
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+ j0.2 |
|
Zin |
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+ j5 |
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1.9 GHz |
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1.95 GHz |
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2 GHz |
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f = 1.8 GHz |
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+ j10 |
|
Z * 1.95 GHz |
1.85 GHz |
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OL |
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0.0 |
0.2 |
1.9 GHz |
0.5 |
1 |
2 |
3 |
5 |
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± j10 |
± j0.2 |
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± j5 |
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± j3 |
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± j0.5 |
± j2 |
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± j1 |
VCC = 26 V, ICQ = 125 mA, Pout = 30 W (PEP)
f |
Zin(1) |
ZOL* |
MHz |
Ω |
Ω |
|
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|
1800 |
4.5 + j7.0 |
4.7 + j2.4 |
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1850 |
4.5 + j6.0 |
4.4 + j1.6 |
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1900 |
4.5 + j4.6 |
3.4 + j1.2 |
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1950 |
3.7 + j2.4 |
3.3 + j1.6 |
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2000 |
3.5 + j1.5 |
3.5 + j2.0 |
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Zin(1)= Conjugate of fixture base impedance.
ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency.
Figure 13. Series Equivalent Input and Output Impedence
MOTOROLA RF DEVICE DATA |
MRF20030 |
|
7 |
Table 1. Common Emitter S±Parameters at VCE = 24 Vdc, IC = 1.8 Adc
f |
|
S11 |
|
S21 |
|
S12 |
|
S22 |
||||
GHz |
|S11| |
|
f |
|S21| |
|
f |
|S12| |
|
f |
|S22| |
|
f |
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||||||||
1.5 |
.964 |
|
158 |
.65 |
|
74 |
.046 |
|
60 |
.859 |
|
161 |
1.55 |
.960 |
|
156 |
.74 |
|
68 |
.047 |
|
56 |
.841 |
|
161 |
1.6 |
.952 |
|
155 |
.87 |
|
60 |
.049 |
|
53 |
.815 |
|
160 |
1.65 |
.933 |
|
153 |
1.05 |
|
50 |
.048 |
|
46 |
.787 |
|
161 |
1.7 |
.892 |
|
149 |
1.32 |
|
35 |
.047 |
|
40 |
.744 |
|
163 |
1.75 |
.804 |
|
149 |
1.64 |
|
13 |
.040 |
|
29 |
.719 |
|
168 |
1.8 |
.727 |
|
157 |
1.78 |
|
±18 |
.026 |
|
21 |
.778 |
|
175 |
1.85 |
.787 |
|
163 |
1.50 |
|
±50 |
.015 |
|
54 |
.883 |
|
174 |
1.9 |
.873 |
|
163 |
1.14 |
|
±73 |
.020 |
|
81 |
.937 |
|
171 |
1.95 |
.921 |
|
160 |
.84 |
|
±89 |
.026 |
|
88 |
.949 |
|
168 |
2 |
.941 |
|
157 |
.62 |
|
±102 |
.031 |
|
93 |
.950 |
|
165 |
2.05 |
.943 |
|
155 |
.48 |
|
±109 |
.036 |
|
93 |
.946 |
|
164 |
2.1 |
.940 |
|
153 |
.38 |
|
±118 |
.040 |
|
92 |
.942 |
|
163 |
2.15 |
.928 |
|
151 |
.30 |
|
±127 |
.042 |
|
97 |
.939 |
|
162 |
2.2 |
.917 |
|
150 |
.24 |
|
±133 |
.049 |
|
99 |
.935 |
|
161 |
2.25 |
.907 |
|
150 |
.20 |
|
±140 |
.056 |
|
101 |
.933 |
|
160 |
2.3 |
.888 |
|
148 |
.17 |
|
±150 |
.066 |
|
100 |
.926 |
|
159 |
2.35 |
.861 |
|
148 |
.14 |
|
±159 |
.077 |
|
98 |
.916 |
|
157 |
2.4 |
.853 |
|
149 |
.11 |
|
±167 |
.087 |
|
92 |
.909 |
|
157 |
2.45 |
.860 |
|
146 |
.10 |
|
±176 |
.095 |
|
89 |
.900 |
|
155 |
2.5 |
.880 |
|
146 |
.10 |
|
156 |
.119 |
|
84 |
.880 |
|
155 |
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MRF20030 |
MOTOROLA RF DEVICE DATA |
8 |
|
PACKAGE DIMENSIONS
±A± |
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|
NOTES: |
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U |
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|
1. DIMENSIONING AND TOLERANCING PER ANSI |
|||||
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Y14.5M, 1982. |
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1 |
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2. |
CONTROLLING DIMENSION: INCH. |
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W |
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INCHES |
MILLIMETERS |
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DIM |
MIN |
MAX |
MIN |
MAX |
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±B± |
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A |
0.739 |
0.750 |
18.77 |
19.05 |
|
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B |
0.240 |
0.260 |
6.10 |
6.60 |
|
|
3 |
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C |
0.165 |
0.198 |
4.19 |
5.03 |
K 2 PL |
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D |
0.215 |
0.225 |
5.46 |
5.72 |
|
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E |
0.060 |
0.070 |
1.52 |
1.78 |
|
2 |
|
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H |
0.084 |
0.096 |
2.13 |
2.44 |
|
Q 2 PL |
|
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|
J |
0.004 |
0.006 |
0.10 |
0.15 |
D |
0.51 (0.020) M |
T |
A |
M |
B |
M |
|
K |
0.178 |
0.208 |
4.52 |
5.28 |
|
|
N |
0.315 |
0.330 |
8.00 |
8.38 |
||||||||
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||||||||||||
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Q |
0.125 |
0.135 |
3.18 |
3.42 |
|
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|
U |
0.560 BSC |
14.23 BSC |
||
N |
|
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W |
0.035 |
0.045 |
0.89 |
1.14 |
E |
|
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|
STYLE 1: |
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J |
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PIN 1. BASE |
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|
C |
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2. COLLECTOR |
|
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H |
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3. EMITTER |
|
|
||
±T± |
SEATING |
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||||
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|
PLANE |
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|
|
CASE 395D±03
ISSUE B
MOTOROLA RF DEVICE DATA |
MRF20030 |
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9 |
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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Mfax is a trademark of Motorola, Inc. |
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USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; |
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MRF20030 |
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MOTOROLA RF DEVICEMRF20030/DDATA |
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