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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF314/D

The RF Line

NPN Silicon

RF Power Transistors

. . . designed primarily for wideband large±signal driver and output amplifier stages in the 30±200 MHz frequency range.

Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts

Minimum Gain = 10 dB

100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR

Gold Metallization System for High Reliability Applications

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

 

 

 

 

Collector±Emitter Voltage

VCEO

35

Vdc

Collector±Base Voltage

VCBO

65

Vdc

Emitter±Base Voltage

VEBO

4.0

Vdc

Collector Current Ð Continuous

IC

3.4

Adc

Total Device Dissipation @ TC = 25°C (1)

PD

82

Watts

Derate above 25°C

 

0.47

W/°C

 

 

 

 

Storage Temperature Range

Tstg

± 65 to +150

°C

THERMAL CHARACTERISTICS

MRF314

30 W, 30 ± 200 MHz

RF POWER

TRANSISTORS

NPN SILICON

CASE 211±07, STYLE 1

Characteristic

 

Symbol

Max

 

Unit

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

 

RθJC

2.13

 

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Min

Typ

 

Max

Unit

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Breakdown Voltage

V(BR)CEO

35

Ð

 

Ð

Vdc

(IC = 30 mAdc, IB = 0)

 

 

 

 

 

 

Collector±Emitter Breakdown Voltage

V(BR)CES

65

Ð

 

Ð

Vdc

(IC = 30 mAdc, VBE = 0)

 

 

 

 

 

 

Collector±Base Breakdown Voltage

V(BR)CBO

65

Ð

 

Ð

Vdc

(IC = 30 mAdc, IE = 0)

 

 

 

 

 

 

Emitter±Base Breakdown Voltage

V(BR)EBO

4.0

Ð

 

Ð

Vdc

(IE = 3.0 mAdc, IC = 0)

 

 

 

 

 

 

Collector Cutoff Current

ICBO

Ð

Ð

 

3.0

mAdc

(VCB = 30 Vdc, IE = 0)

 

 

 

 

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE

20

Ð

 

80

Ð

(IC = 1.5 Adc, VCE = 5.0 Vdc)

 

 

 

 

 

 

NOTE:

 

 

 

 

 

(continued)

1.These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers.

Motorola, Inc. 1994

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

 

Typ

Max

 

Unit

 

 

 

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance

Cob

Ð

 

30

40

 

pF

(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)

 

 

 

 

 

 

 

FUNCTIONAL TESTS (Figure 1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common±Emitter Amplifier Power Gain

GPE

10

 

13.5

Ð

 

dB

(VCC = 28 Vdc, Pout = 30 W, f = 150 MHz)

 

 

 

 

 

 

 

Collector Efficiency

h

50

 

Ð

Ð

 

%

(VCC = 28 Vdc, Pout = 30 W, f = 150 MHz)

 

 

 

 

 

 

 

Load Mismatch

y

 

 

 

 

 

 

(VCC = 28 Vdc, Pout = 30 W, f = 150 MHz,

 

 

No Degradation in Power Output

 

VSWR = 30:1 all phase angles)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R2

 

 

 

 

 

 

R1

 

 

 

 

 

 

RFC3

 

 

 

 

 

 

 

 

DC + 28 Vdc

 

 

 

 

C8

C9

C10

 

 

 

 

RFC2

 

 

 

 

 

 

L1

 

C7

C1

 

 

 

Z2

 

RF OUTPUT

RF INPUT

 

Z1

 

DUT

 

 

 

 

 

 

 

 

C2

C3

RFC1

C4

C5

 

C6

 

 

C1, C7 Ð 18 pF, 100 mil ATC

C2 Ð 68 pF, 100 mil ATC

C3, C6 Ð Johanson #JMC 5501 C4 Ð 270 pF, 100 mil ATC

C5 Ð 240 pF, 100 mil ATC C8, C9 Ð 100 pF Underwood C10 Ð 1.0 mF Tantalum

L1 Ð 2 Turns, 2.5 ″ #20 Wire, ID = 0.275″

R1, R2 Ð 10 W, 1.0 W

RFC1 Ð 15 mH Molded Coil

RFC2 Ð 2 Turns, 2.5 ″ #20 Wire, ID = 0.2″ RFC3 Ð Ferroxcube VK200±19/4B

Z1 Ð Microstrip, 0.168 ″ W x 1.6″ L Z2 Ð Microstrip, 0.168 ″ W x 1.2″ L

Board Ð Glass Teflon er = 2.55

Figure 1. 150 MHz Test Circuit

MRF314

MOTOROLA RF DEVICE DATA

2

 

 

 

 

TYPICAL PERFORMANCE CURVES

 

 

55

 

 

 

30

 

 

 

(WATTS)

45

 

 

(WATTS)

25

 

50 MHz

70 MHz

 

 

 

 

 

 

 

 

 

 

 

 

POWER

35

 

50 MHz

POWER

20

 

f = 30 MHz

100 MHz

 

200 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT,

 

f = 30 MHz

 

OUTPUT,

 

 

 

150 MHz

25

 

150 MHz

15

 

 

200 MHz

 

 

 

 

 

 

 

 

 

 

 

 

out

15

 

100 MHz

out

10

 

 

 

 

 

 

 

 

P

 

70 MHz

P

 

 

 

 

 

 

 

 

 

 

 

 

5

 

VCC = 28 V

 

5

 

VCC = 13.5 V

 

0.1

1

10

0.1

1

6

 

0.03

0.04

 

 

 

Pin, INPUT POWER (WATTS)

 

 

 

Pin, INPUT POWER (WATTS)

 

Figure 2. Output Power versus Input Power

Figure 3. Output Power versus Input Power

(dB)

24

 

 

 

 

 

 

 

 

 

 

GAIN

 

 

 

 

 

 

 

 

 

 

22

 

 

 

 

 

 

 

 

 

 

POWER

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

EMITTER

18

 

 

 

 

 

 

 

 

 

 

16

 

 

 

 

 

 

 

 

 

 

,COMMON

 

 

 

 

 

 

 

VCC = 28 V

 

 

 

 

 

 

 

 

 

 

14

 

 

 

 

 

 

 

Pout = 30 W

 

12

 

 

 

 

 

 

 

 

 

 

PE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

G

10

 

 

 

 

 

 

 

 

 

 

 

40

60

80

100

120

140

160

180

200

220

 

20

(%)

70

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

η , EFFICIENCY

60

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

VCC = 28 V

 

 

 

 

 

 

 

 

 

Pout = 30 W

 

 

 

 

 

 

 

 

 

 

 

 

20

40

60

80

100

120

140

160

180

200

220

f, FREQUENCY (MHz)

f, FREQUENCY (MHz)

Figure 4. Power Gain versus Frequency

Figure 5. Efficiency versus Frequency

MOTOROLA RF DEVICE DATA

MRF314

 

3

5.0

100

0

150

5.0

 

 

 

50

70

 

f = 200 MHz

 

10.0

 

 

 

Zin

 

 

 

30

 

 

 

15.0

5.0

 

20.0Pout = 30 W, VCC = 28 V

f

Zin

ZOL*

 

10.0

MHz

OHMS

OHMS

 

f = 200 MHz

30

2.4 ± j3.4

18.0 ± j12.1

 

150

50

1.6 ± j2.6

16.5 ± j12.1

100

15.0

70

0.8 ± j0.8

15.0 ± j11.8

70

ZOL*

100

0.7 ± j0.5

12.9 ± j10.8

150

0.9 + j0.9

11.9 ± j9.4

50

20.0

200

1.3 + j1.2

11.5 ± j8.1

30

 

 

 

 

 

ZOL* = Conjugate of the optimum loadimpedance into which the device output operates at a given output power, voltage and frequency.

Figure 6. Series Equivalent Input/Output Impedance

MRF314

MOTOROLA RF DEVICE DATA

4

 

PACKAGE DIMENSIONS

Q

1

2

S K

A

 

 

 

 

 

 

U

 

NOTES:

 

 

 

 

M

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

Y14.5M, 1982.

 

 

 

M

 

2. CONTROLLING DIMENSION: INCH.

 

 

 

INCHES

MILLIMETERS

 

 

 

4

 

DIM

MIN

MAX

MIN

MAX

 

A

0.960

0.990

24.39

25.14

 

B

R

B

0.370

0.390

9.40

9.90

 

 

C

0.229

0.281

5.82

7.13

 

 

D

0.215

0.235

5.47

5.96

3

 

E

0.085

0.105

2.16

2.66

 

H

0.150

0.108

3.81

4.57

 

 

D

 

J

0.004

0.006

0.11

0.15

 

K

0.395

0.405

10.04

10.28

 

 

M

40

50

40

50

 

 

Q

0.113

0.130

2.88

3.30

 

 

R

0.245

0.255

6.23

6.47

 

 

S

0.790

0.810

20.07

20.57

 

 

U

0.720

0.730

18.29

18.54

 

 

STYLE 1:

 

 

J

PIN 1.

EMITTER

 

 

2.

BASE

 

C

3.

EMITTER

H

4.

COLLECTOR

E

SEATING

 

 

 

PLANE

 

CASE 211±07

ISSUE N

MOTOROLA RF DEVICE DATA

MRF314

 

5

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

MRF314/D

 

*MRF314/D*

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