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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF8372/D

The RF Line

NPN Silicon

RF Low Power Transistor

Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges.

Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW

Minimum Gain = 8.0 dB Efficiency 60% (Typ)

State±of±the±Art Technology

Fine Line Geometry

Gold Top Metal and Wires

Silicon Nitride Passivated

Ion Implanted Arsenic Emitters

Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Order MRF8372 in tape and reel packaging by adding suffix: R1 suffix = 500 units per reel

R2 suffix = 2,500 units per reel

MAXIMUM RATINGS

MRF8372R1, R2

750 mW, 870 MHz RF LOW POWER TRANSISTOR NPN SILICON

CASE 751±05, STYLE 1

SORF (SO±8)

Rating

Symbol

Value

Unit

 

 

 

 

Collector±Emitter Voltage

VCEO

16

Vdc

Collector±Base Voltage

VCBO

36

Vdc

Emitter±Base Voltage

VEBO

4.0

Vdc

Collector Current Ð Continuous

IC

200

mAdc

Total Device Dissipation @ TC = 75°C (1)

PD

1.67

Watts

Derate above 75°C

 

22.2

mW/°C

 

 

 

 

Storage Temperature Range

TJ, Tstg

± 55 to +150

°C

Maximum Junction Temperature

TJmax

150

°C

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

RθJC

45

°C/W

DEVICE MARKING

MRF8372 = 8372

NOTE:

1. Case temperature measured on collector lead immediately adjacent to body of package.

 

(Replaces MRF837/D)

MOTOROLAMotorola, Inc. 1997RF DEVICE DATA

MRF8372R1, R2

 

1

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

OFF CHARACTERISTICS

Collector±Emitter Breakdown Voltage

V(BR)CEO

16

Ð

Ð

Vdc

(IC = 5.0 mAdc, IB = 0)

 

 

 

 

 

Collector±Emitter Breakdown Voltage

V(BR)CES

36

Ð

Ð

Vdc

(IC = 5.0 mAdc, VBE = 0)

 

 

 

 

 

Emitter±Base Breakdown Voltage

V(BR)EBO

4.0

Ð

Ð

Vdc

(IE = 0.1 mAdc, IC = 0)

 

 

 

 

 

Collector Cutoff Current

ICES

Ð

Ð

0.1

mAdc

(VCE = 15 Vdc, VBE = 0, TC = 25°C)

 

 

 

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE

30

90

200

Ð

(IC = 50 mAdc, VCE = 10 Vdc)

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance

Cob

Ð

1.8

2.5

pF

(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)

 

 

 

 

 

FUNCTIONAL TESTS

 

 

 

 

 

 

 

 

 

 

 

Common±Emitter Amplifier Power Gain

Gpe

8.0

10

Ð

dB

(VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz)

 

 

 

 

 

Collector Efficiency

η

55

60

Ð

%

(VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz)

 

 

 

 

 

MRF8372R1, R2

MOTOROLA RF DEVICE DATA

2

 

 

 

 

 

C6

L3

 

+

 

 

 

B

 

B

 

 

 

 

 

 

 

 

+

 

 

 

 

 

C7

C8

VCC

 

 

L1

 

 

L2

 

±

 

 

 

 

 

 

 

 

 

 

 

 

C4

 

 

 

 

 

 

Z5

Z6

 

 

Z1

Z2

Z3

Z4

DUT

 

 

 

 

 

 

 

 

C5

 

 

C1

C2

 

C3

 

 

 

 

C1, C5 Ð 0.8 ± 8.0 pF Johanson Gigatrim

L1, L2

Ð 4 Turns, #21 AWG, 5/32 ″ ID

C2, C3 Ð 10 pF Ceramic Chip Capacitor

L3 Ð 7

Turns, #21 AWG, 5/32 ″ ID

C6

Ð 91 pF Clamped Mica, Mini±Underwood

Z1, Z2 Ð 1 ″ x 0.078″ Microstrip, Zo = 50 Ohms

C4

Ð 47 pF Ceramic Chip Capacitor

Z3 Ð 0.25

x 0.078″

Microstrip, Zo = 50 Ohms

C7

Ð 91 pF Clamped Mica, Mini±Underwood

Z4 Ð 0.15

x 0.078″

Microstrip, Zo = 50 Ohms

C8

Ð 1.0 mF 25 V Tantalum

Z5 Ð 0.30

x 0.078″

Microstrip, Zo = 50 Ohms

B Ð Bead, Ferroxcube 56±590±65/3B

Z6 Ð 1.63

x 0.078″

Microstrip, Zo = 50 Ohms

 

 

PCB Ð 1/32 ″ Glass Teflon, er = 2.56

Figure 1. 800 ± 900 MHz Broadband Circuit

800/900 MHz BAND DATA

 

 

 

 

 

Pout = 750 mW

 

 

 

 

12

 

 

 

VCC = 12.5 Vdc

 

 

 

 

10

 

GPE

 

 

 

 

 

, GAIN (dB)

 

 

 

 

70

,COLLECTOR

(%)

 

 

 

 

 

8

 

hc

 

 

 

 

 

 

 

60

6

 

 

 

 

 

PE

 

 

 

 

 

50

c

 

G

 

 

 

 

 

η EFFICIENCY

 

4

 

 

 

 

 

 

(dB)

 

 

 

 

 

 

10

IRL, INPUT

 

 

 

 

 

 

RETURN LOSS

 

2

 

IRL

 

 

15

 

 

 

 

 

20

 

 

 

 

 

 

 

800

820

840

860

880

25

 

900

 

 

 

f, FREQUENCY (MHz)

 

 

 

 

 

 

 

 

 

Figure 2. Typical Broadband Performance

MOTOROLA RF DEVICE DATA

MRF8372R1, R2

 

3

 

Zin

 

ZOL*

 

Ohms

 

Ohms

 

 

 

 

 

 

 

VCC = 7.5 V

 

VCC = 12.5 V

VCC = 7.5 V

VCC = 12.5 V

f

 

 

 

Pout = 806 MHz = 820 mW

Pout = 806 MHz = 1.05 mW

Frequency

 

 

 

Pout = 870 MHz = 635 mW

Pout = 870 MHz = 855 mW

MHz

Pin = 150 mW

 

Pin = 100 mW

Pout = 960 MHz = 530 mW

Pout = 960 MHz = 580 mW

806

8.0 + j1.9

 

4.0 + j1.2

24.7 ± j19.2

20.9 ± j31.0

870

5.2 + j3.5

 

6.0 + j1.9

36.9 ± j20.5

32.1 ± j26.6

960

6.8 + j4.0

 

6.1 + j2.5

39.3 ± j18.5

36.3 ± j25.7

 

 

 

 

 

 

ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage, and frequency.

Table 1. Series Equivalent Input/Output Impedance

TYPICAL CHARACTERISTICS

800/900 MHz BAND DATA (continued)

 

1200

 

 

 

 

 

 

 

 

 

 

 

(mW)

 

 

 

 

 

 

 

 

VCC = 12.5 Vdc

 

 

900

 

 

 

 

 

 

 

 

 

 

 

POWER

600

 

 

 

 

 

 

 

7.5 Vdc

 

 

 

, OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

out

300

 

 

 

 

 

 

 

 

 

 

 

P

 

 

 

 

 

 

 

 

 

 

 

 

0

0

15

30

45

60

75

90

105

120

135

150

 

 

 

 

 

 

Pin, INPUT POWER (mW)

 

 

 

Figure 3. Output Power versus Input Power f = 870 MHz

 

1200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(mW)

 

 

 

 

Pin

= 150

mW

 

 

 

 

 

 

 

900

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

mW

 

 

 

 

 

 

 

POWER

 

 

 

 

 

 

 

 

 

 

 

 

 

600

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50

mW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

out

300

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

P

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f =

870 MHz

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6

8

10

 

12

 

14

16

 

 

 

 

 

VCC, COLLECTOR VOLTAGE (Vdc)

 

 

 

 

Figure 5. Output Power versus Collector Voltage

 

1000

 

 

 

 

 

 

 

 

(mW)

 

 

 

 

 

 

 

 

 

POWER

 

 

 

 

 

 

 

Pin = 150 mW

500

 

 

 

 

 

 

 

 

, OUTPUT

 

 

 

 

 

 

100 mW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

out

 

 

 

 

 

 

 

50 mW

P

 

 

 

 

 

 

 

 

0

820

840

860

880

900

920

940

960

 

800

 

 

 

 

f, FREQUENCY (MHz)

 

 

 

Figure 4. Output Power versus Frequency

 

 

 

 

VCC = 7.5 Vdc

 

 

 

 

1600

 

 

 

 

 

 

 

 

(mW)

1200

 

 

 

 

 

 

 

 

POWER

 

 

 

 

 

 

 

Pin = 150 mW

800

 

 

 

 

 

 

 

 

, OUTPUT

 

 

 

 

 

 

100 mW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

out

400

 

 

 

 

 

 

 

 

P

 

 

 

 

 

 

50 mW

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

VCC = 12.5 Vdc

 

 

820

840

860

880

900

920

940

960

 

800

f, FREQUENCY (MHz)

Figure 6. Output Power versus Frequency

MRF8372R1, R2

MOTOROLA RF DEVICE DATA

4

 

TYPICAL CHARACTERISTICS

800/900 MHz BAND DATA (continued)

 

1600

 

 

 

 

 

 

 

 

 

1200

 

 

 

 

 

 

 

1400

 

 

 

 

 

 

 

 

 

1000

 

 

 

 

 

 

(mW)

 

 

 

 

 

 

 

 

 

(mW)

 

 

 

 

 

 

1200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = 12.5 Vdc

 

 

 

 

 

 

 

 

POWER

1000

 

 

 

 

 

 

POWER

800

 

 

 

 

Pin = 75 mW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

800

 

 

 

 

 

 

 

 

600

 

 

 

 

 

 

,OUTPUT

 

 

 

 

 

 

 

 

,OUTPUT

 

 

 

 

50 mW

 

 

 

 

 

 

 

7.5 Vdc

 

 

 

 

 

 

 

600

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

400

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25 mW

 

out

400

 

 

 

 

 

 

 

 

out

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

P

 

 

 

 

 

 

 

 

 

P

200

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = 7.5 Vdc

 

 

0

 

 

 

 

 

 

f = 512 MHz

 

 

0

 

 

 

 

 

 

10

20

30

40

50

60

70

80

 

420

440

460

480

500

520

 

0

 

400

Pin, INPUT POWER (mW)

f, FREQUENCY (MHz)

Figure 7. Output Power versus Input Power

Figure 8. Output Power versus Frequency

1400

1200

(mW)

1000

POWER

800

OUTPUT,

600

 

out

400

 

P

 

 

200

 

0

6

 

 

 

 

 

1500

 

 

 

 

 

 

 

 

 

 

(mW)

1300

 

 

 

 

Pin = 75 mW

 

 

Pin = 75 mW

 

 

 

 

 

 

 

 

 

 

 

 

POWER

1100

 

 

 

 

50 mW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50 mW

 

 

, OUTPUT

900

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25 mW

 

 

700

 

 

 

 

 

 

 

 

 

out

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

P

 

 

 

 

 

25 mW

 

 

 

 

 

 

600

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 512 MHz

 

300

VCC = 12.5 Vdc

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

8

10

12

14

16

400

420

440

460

480

500

520

 

VCC, COLLECTOR VOLTAGE (Vdc)

 

 

 

 

f, FREQUENCY (MHz)

 

 

Figure 9. Output Power versus Collector Voltage

Figure 10. Output Power versus Frequency

MOTOROLA RF DEVICE DATA

MRF8372R1, R2

 

5

PACKAGE DIMENSIONS

A

D

C

 

 

8

5

 

E

H

0.25 M B M

1

 

 

 

4

 

 

 

h X 45 _

B

e

q

 

 

 

A

C

SEATING

PLANE

L

0.10

A1

B

0.25

M C B S A S

CASE 751±05

ISSUE S

NOTES:

1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2.DIMENSIONS ARE IN MILLIMETERS.

3.DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION.

4.MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.

5.DIMENSION B DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION.

 

 

 

MILLIMETERS

 

 

DIM

MIN

MAX

 

 

A

1.35

1.75

 

 

A1

0.10

0.25

STYLE 1:

 

B

0.35

0.49

 

C

0.18

0.25

PIN 1.

EMITTER

D

4.80

5.00

2.

COLLECTOR

E

3.80

4.00

3.

COLLECTOR

e

1.27 BSC

4.

EMITTER

5.

EMITTER

H

5.80

6.20

h

0.25

0.50

6.

BASE

L

0.40

1.25

7.

BASE

8.

EMITTER

q

0

7

 

 

 

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

 

Mfax is a trademark of Motorola, Inc.

How to reach us:

 

USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4±32±1,

P.O. Box 5405, Denver, Colorado 80217. 303±675±2140 or 1±800±441±2447

Nishi±Gotanda, Shinagawa±ku, Tokyo 141, Japan. 81±3±5487±8488

Mfax : RMFAX0@email.sps.mot.com ± TOUCHTONE 602±244±6609

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

± US & Canada ONLY 1±800±774±1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

INTERNET: http://motorola.com/sps

MRF8372R1, R2

MOTOROLA RF DEVICEMRF8372/DDATA

6

 

 

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