MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF317/D
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large±signal output amplifier stages in 30±200 MHz frequency range.
•Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W
Minimum Gain = 9.0 dB
•Built±In Matching Network for Broadband Operation
•100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
•Gold Metallization System for High Reliability
•High Output Saturation Power Ð Ideally Suited for 30 W Carrier/120 W Peak AM Amplifier Service
•Guaranteed Performance in Broadband Test Fixture
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
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Collector±Emitter Voltage |
VCEO |
35 |
Vdc |
Collector±Base Voltage |
VCBO |
65 |
Vdc |
Emitter±Base Voltage |
VEBO |
4.0 |
Vdc |
Collector Current Ð Continuous |
IC |
12 |
Adc |
Ð Peak (10 seconds) |
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18 |
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Total Device Dissipation @ TC = 25°C (1) |
PD |
270 |
Watts |
Derate above 25°C |
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1.54 |
W/°C |
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Storage Temperature Range |
Tstg |
± 65 to +150 |
°C |
THERMAL CHARACTERISTICS
MRF317
100 W, 30 ± 200 MHz
CONTROLLED Q
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316±01, STYLE 1
Characteristic |
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Symbol |
Max |
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Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
0.65 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) |
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Characteristic |
Symbol |
Min |
Typ |
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Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Breakdown Voltage |
V(BR)CEO |
35 |
Ð |
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Ð |
Vdc |
(IC = 100 mAdc, IB = 0) |
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Collector±Emitter Breakdown Voltage |
V(BR)CES |
65 |
Ð |
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Ð |
Vdc |
(IC = 100 mAdc, VBE = 0) |
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Collector±Base Breakdown Voltage |
V(BR)CBO |
65 |
Ð |
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Ð |
Vdc |
(IC = 100 mAdc, IE = 0) |
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Emitter±Base Breakdown Voltage |
V(BR)EBO |
4.0 |
Ð |
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Ð |
Vdc |
(IE = 10 mAdc, IC = 0) |
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Collector Cutoff Current |
ICBO |
Ð |
Ð |
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5.0 |
mAdc |
(VCB = 30 Vdc, IE = 0) |
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ON CHARACTERISTICS |
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DC Current Gain |
hFE |
10 |
25 |
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80 |
Ð |
(IC = 5.0 Adc, VCE = 5.0 Vdc) |
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NOTE: |
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(continued) |
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 7
MOTOROLAMotorola, Inc. 1997RF DEVICE DATA |
MRF317 |
|
1 |
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
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Typ |
Max |
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Unit |
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DYNAMIC CHARACTERISTICS |
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Output Capacitance |
Cob |
Ð |
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150 |
175 |
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pF |
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz) |
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FUNCTIONAL TESTS (Figure 2) |
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Common±Emitter Amplifier Power Gain |
GPE |
9.0 |
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10 |
Ð |
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dB |
(VCC = 28 Vdc, Pout = 100 W, f = 150 MHz, IC (Max) = 6.5 Adc) |
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Collector Efficiency |
η |
55 |
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60 |
Ð |
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% |
(VCC = 28 Vdc, Pout = 100 W, f = 150 MHz, IC (Max) = 6.5 Adc) |
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Load Mismatch |
ψ |
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(VCC = 28 Vdc, Pout = 100 W CW, f = 150 MHz, |
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No Degradation in Output Power |
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VSWR = 30:1 all phase angles) |
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MRF317 |
MOTOROLA RF DEVICE DATA |
2 |
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R2 |
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R3 |
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RFC3 |
RFC5 |
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R1 |
C5 |
C13 |
RFC6 |
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RFC2 |
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DC + 28 Vdc |
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C11 |
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C12 |
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RFC1 |
RFC4 |
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L3 |
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L4 |
C10 |
RF |
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C1 |
L2 |
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RF |
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OUTPUT |
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INPUT |
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DUT |
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C6 |
C7 |
C8 |
C9 |
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L1 |
C2 |
C3 |
C4 |
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C1, C9 Ð 39 pF, 100 mil ATC |
C11 Ð 60 pF, Underwood |
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RFC1 Ð 0.15 mH Molded Coil |
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C2 Ð 120 pF, 100 mil ATC |
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C12 Ð 0.1 mF Erie Redcap |
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RFC2, RFC3 Ð Ferroxcube Bead 56±590±65/3B |
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C3, C4 Ð 360 pF, 100 mil ATC |
C13 Ð 1000 pF, Underwood J102 |
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RFC4 Ð 1 Turn, #18 Wire, 2.0 ″ L |
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C5 Ð 1000 pF Dipped Mica |
L1 Ð 50 nH |
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RFC5 Ð Ferroxcube VK200 19/4B |
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C6, C7 Ð 100 pF, 100 mil ATC* |
L2 Ð 6.0 nH |
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RFC6 Ð 7 Turns, #18 Wire, 0.3 ″ ID |
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C8 Ð 18 pF, 100 mil ATC* |
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L3 Ð 8.0 nH |
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R1 Ð 10 |
W 1/2 W |
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C10 Ð 43 pF, 100 mil ATC |
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L4 Ð 32 nH |
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R2, R3 Ð 10 W 1.0 W |
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*Combination of C6, C7, C8 equals 220 pF.
Figure 1. 110 ± 160 MHz Broadband Amplifier Ð Test Fixture Schematic
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10 |
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(dB) |
9 |
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GAIN |
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, POWER |
8 |
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PE |
7 |
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Pout = 100 W |
G |
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VCC = 28 V |
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6 |
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110 |
135 |
160 |
f, FREQUENCY (MHz)
Figure 2. Power Gain versus Frequency
Broadband Test Fixture
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70 |
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60 |
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η (%) |
50 |
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EFFICIENCY, |
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40 |
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Pout = 100 W |
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30 |
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VCC = 28 V |
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20 |
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110 |
135 |
160 |
f, FREQUENCY (MHz)
Figure 3. Efficiency versus Frequency
Broadband Test Fixture
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6 |
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140 |
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f = 30 MHz |
50 MHz |
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Pout = 100 W |
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VCC = 28 V |
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(WATTS) |
120 |
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5 |
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VCC = 28 V |
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100 |
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INPUT VSWR |
4 |
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OUTPUT POWER |
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80 |
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3 |
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60 |
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200 MHz |
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, |
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2 |
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out |
40 |
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150 MHz |
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P |
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100 MHz |
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1 |
135 |
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160 |
20 |
0.5 |
1 |
2 |
5 |
10 |
20 |
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110 |
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0.2 |
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f, FREQUENCY (MHz) |
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Pin, INPUT POWER (WATTS) |
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Figure 4. Input VSWR versus Frequency |
Figure 5. Output Power versus Input Power |
Broadband Test Fixture |
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MOTOROLA RF DEVICE DATA |
MRF317 |
|
3 |
TYPICAL PERFORMANCE CURVES
(dB) |
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120 |
17 |
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EMITTER POWER GAIN |
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Pout = 100 W |
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16 |
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VCC = 28 V |
100 |
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15 |
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POWER OUTPUT(WATTS) |
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14 |
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80 |
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13 |
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12 |
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60 |
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11 |
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COMMON |
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, |
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10 |
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out |
40 |
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P |
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, |
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PE |
9 |
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G |
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20 |
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8 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
180 |
200 |
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20 |
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f, FREQUENCY (MHz)
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Pin = 10 W |
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8 W |
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6 W |
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f = 100 MHz |
12 |
16 |
20 |
24 |
28 |
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VCC, SUPPLY VOLTAGE (VOLTS) |
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Figure 6. Power Gain versus Frequency |
Figure 7. Power Output versus Supply Voltage |
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120 |
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(WATTS) |
100 |
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Pin = 10 W |
(WATTS) |
100 |
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8 W |
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6 W |
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OUTPUT |
80 |
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OUTPUT |
80 |
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, POWER |
60 |
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, POWER |
60 |
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out |
40 |
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out |
40 |
P |
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f = 150 MHz |
P |
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20 |
16 |
20 |
24 |
28 |
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20 |
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12 |
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Pin = 10 W |
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8 W |
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6 W |
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f = 200 MHz |
12 |
16 |
20 |
24 |
28 |
VCC, SUPPLY VOLTAGE (VOLTS) |
VCC, SUPPLY VOLTAGE (VOLTS) |
Figure 8. Power Output versus Supply Voltage |
Figure 9. Power Output versus Supply Voltage |
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1.0 |
0 |
1.0 |
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2.0 |
Zin |
100 |
125 |
2.0 |
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150 |
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VCC = 28 V, Pout = 100 W |
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3.0 |
50 |
200 |
1.0200 |
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3.0 |
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4.0 |
f = 30 MHz |
175 |
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175 |
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f |
Zin |
ZOL* |
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MHz |
OHMS |
OHMS |
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2.0 |
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100 |
150 |
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30 |
1.2 ± j2.0 |
4.3 ± j5.0 |
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125 |
3.0 |
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50 |
1.0 ± j1.8 |
4.0 ± j4.9 |
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100 |
0.3 + j0.7 |
2.0 ± j2.3 |
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ZOL* |
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4.0 |
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125 |
0.3 + j1.0 |
1.9 ± j1.9 |
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150 |
0.6 + j1.3 |
1.9 ± j1.3 |
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50 |
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5.0 |
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175 |
1.0 + j1.5 |
1.6 ± j0.6 |
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6.0 |
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200 |
0.9 + j1.0 |
1.1 ± j0.6 |
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f = 30 MHz |
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ZOL* = Conjugate of the optimum load impedance into which the device output |
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ZOL* = operates at a given output power, voltage and frequency. |
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Figure 10. Series Equivalent Input±Output Impedance |
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MRF317 |
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MOTOROLA RF DEVICE DATA |
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4 |
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PACKAGE DIMENSIONS
D |
F |
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4 |
R |
K |
3 |
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1 |
Q |
2 |
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L |
B |
C |
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J |
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E |
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N |
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H |
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A |
U |
CASE 316±01
ISSUE D
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
24.38 |
25.14 |
0.960 |
0.990 |
B |
12.45 |
12.95 |
0.490 |
0.510 |
C |
5.97 |
7.62 |
0.235 |
0.300 |
D |
5.33 |
5.58 |
0.210 |
0.220 |
E |
2.16 |
3.04 |
0.085 |
0.120 |
F |
5.08 |
5.33 |
0.200 |
0.210 |
H |
18.29 |
18.54 |
0.720 |
0.730 |
J |
0.10 |
0.15 |
0.004 |
0.006 |
K |
10.29 |
11.17 |
0.405 |
0.440 |
L |
3.81 |
4.06 |
0.150 |
0.160 |
N |
3.81 |
4.31 |
0.150 |
0.170 |
Q |
2.92 |
3.30 |
0.115 |
0.130 |
R |
3.05 |
3.30 |
0.120 |
0.130 |
U |
11.94 |
12.57 |
0.470 |
0.495 |
STYLE 1:
PIN 1. EMITTER
2.COLLECTOR
3.EMITTER
4.BASE
MOTOROLA RF DEVICE DATA |
MRF317 |
|
5 |
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
◊ |
MRF317/D |
|
MOTOROLA RF DEVICE DATA |
|
*MRF317/D* |